• Journal of IKEEE
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• v.9 no.1 s.16
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• pp.57-64
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• 2005

This paper presents a built-in current sensor(BICS) that detects defects in CMOS integrated circuits using the current testing technique. This circuit employs a cross-coupled connected PMOS transistors, it is used as a current comparator. The proposed circuit has a negligible impact on the performance of the circuit under test (CUT) and high speed detection time. In addition, in the operation of the normal mode, the BlCS does not have dissipation of extra power, and it can be applied to the deep submicron process. The validity and effectiveness are verified through the HSPICE simulation on circuits with defects. The area overhead of a BlCS versus the entire chip is about 9.2%. The chip was fabricated with Hynix $0.35{\mu}m$ 2-poly 4-metal N-well CMOS standard technology.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.6 s.348
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• pp.9-17
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• 2006

We proposed a new High-speed CMOS Level Up/Down Shifter circuits that can be used with Dynamic Voltage and Frequency Scaling(DVFS) algorithm, for low power system in the SoC(System-on-Chip). This circuit used to interface between the other voltage levels in each CMOS circuit boundary, or between multiple core voltage levels in a system bus. Proposed circuit have advantage that decrease speed attenuation and duty ratio distortion problems for interface. The level up/down shifter of the proposed circuit designed that operated from multi core voltages$(0.6\sim1.6V)$ to used voltage level for each IP at the 500MHz input frequency The proposed circuit supports level up shifting from the input voltage levels, that are standard I/O voltages 1.8V, 2.5V, 3.3V, to multiple core voltage levels in between of $0.6V\sim1.6V$, that are used internally in the system. And level down shifter reverse operated at 1Ghz input frequency for same condition. Simulations results are shown to verify the proposed function by Hspice simulation, with $0.6V\sim1.6V$ CMOS Process, $0.13{\mu}m$ IBM CMOS Process and $0.65{\mu}m$ CMOS model parameters. Moreover, it is researched delay time, power dissipation and duty ration distortion of the output voltage witch is proportional to the operating frequency for the proposed circuit.

• Journal of IKEEE
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• v.18 no.1
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• pp.119-127
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• 2014

This paper presents a CMOS readout circuit for MEMS(Micro Electro Mechanical System) acceleration sensors. It consists of a MEMS accelerometer, a capacitance to voltage converter(CVC) and a second-order switched-capacitor ${\Sigma}{\Delta}$ modulator. Correlated-double-sampling(CDS) and chopper-stabilization(CHS) techniques are used in the CVC and ${\Sigma}{\Delta}$ modulator to reduce the low-frequency noise and DC offset. The sensitivity of the designed CVC is 150mV/g and its non-linearity is 0.15%. The duty cycle of the designed ${\Sigma}{\Delta}$ modulator output increases about 10% when the input voltage amplitude increases by 100mV, and the modulator's non-linearity is 0.45%. The total sensitivity is 150mV/g and the power consumption is 5.6mW. The proposed circuit is designed in a 0.35um CMOS process with a supply voltage of 3.3V and a operating frequency of 2MHz. The size of the designed chip including PADs is $0.96mm{\times}0.85mm$.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2012.10a
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• pp.221-224
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• 2012

This paper presents a CMOS interface circuit for MEMS acceleration sensor. It consists of a capacitance to voltage converter(CVC), a second-order switched-capacitor (SC) integrator and comparator. A bandgap reference(BGR) has been designed to supply a stable bias to the circuit and a ${\Sigma}{\Delta}$ Modulator with chopper - stabilization(CHS) has also been designed for more suppression of the low frequency noise and offset. As a result, the output of this ${\Sigma}{\Delta}$ Modulator increases about 10% duty cycle when the input voltage amplitude increases 100mV and the sensitivity is x, y-axis 0.45v/g, z-axis 0.28V/g. This work is designed and implemented in a 0.35um CMOS technology with a supply voltage of 3.3V and a sampling frequency of 3MHz sampling frequency. The size of the designed chip including PADs is $0.96mm{\times}0.85mm$.

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.11
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• pp.83-91
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• 1990

VOC(coltage controlled oscillator) circuits are necessary in applications such at the demodul-ation of FM signals, frequency synthesizer, and for clock recovery from digital data. In this paper, we designed the VCO circuit based on a OTA(operational transconductance amplifier) and the OP amp which using a differential amplifier by BiCMOS circuit. It consists of a OTA, voltage contorolled integrator and a schmitt trigger. Conventional VCO circuits are designed using the CMOS circuit, but in this paper we designed newly BiCMOS VCO circuit which has a good drive avlity, As a result of SPICE simulation, output frequency is 141KHz at 105KHz, and sensitivity is 15KHz.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2016.05a
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• pp.696-697
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• 2016

본 논문은 5.25-GHz BiCMOS 저 잡음 증폭기를 위한 바이어스 회로를 제안한다. 이러한 회로는 1볼트 전원에서 동작하며, 저전압 및 저전력으로 동작하도록 설계되어 있다. 제안한 회로는 $0.18{\mu}m$ SiGe HBT BiCMOS로 설계하였다. 이러한 회로는 밴드 갭 참조회로 (band-gap reference circuit)를 사용하였다.

• Journal of IKEEE
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• v.14 no.4
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• pp.283-290
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• 2010

This study is on the design of 10Gbps CMOS receiver circuits for fiber-optic communication. The receiver is made up of a photodiode, a transimpedance amplifier, a limiting amplifier, an equalizer, a clock and data recovery loop circuit, and a demultiplexer or demux with some auxiliary circuits including I/O circuits. Various wideband or high-speed circuit techniques are harnessed to realize a feasible, effective, and reliable receiver for a SONET fiber-optic standard, OC-192.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.25 no.1B
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• pp.183-192
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• 2000

In this paper, the dual looped CMOS PLL with 3-250MHz input locking range at a single 13.3V is designed. This paper proposed a new PLL architecture with a current pumping algorithm to improve voltage-to-frequencylinearity of VCO(Voltage Controlled Oscillator). The designed VCO operates at a wide frequency range of75.8MHz-lGHz with a high linearity. Also, PFD(Phase frequency Detector) circuit preventing voltage fluctuation of the charge pump with loop filter circuit under the locked condition is designed. The simulation results of the PLL using 0.6 um N-well single poly triple metal CMOS technology illustrate a locking time of 3.5 us, a power dissipation of 92mW at 1GHz operating frequency with 125MHz of input frequency. Measured results show that the phase noise of VCO with V-I converter is -100.3dBc/Hz at a 100kHz offset frequency.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.15 no.4
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• pp.897-904
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• 2011

In this paper, a novel circuit topology of a low-noise amplifier tunable at 1.8GHz band for PCS and 2.4GHz band for WLAN using a CMOS active inductor is proposed. This circuit topology to reduce higher noise figure of the low noise amplifier with the CMOS active load is analyzed. Furthermore, the noise canceling technique is adopted to reduce more the noise figure. The noise figure of the proposed circuit topology is analyzed and simulated in $0.18{\mu}m$ CMOS process technology. Thus, the simulation results exhibit that the noise performance enhancement of the tunable low noise amplifier is about 3.4dB, which is mainly due to the proposed new circuit topology.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.39 no.3
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• pp.191-200
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• 2002

In this paper, we present the method transforming the interval functions into the truncated difference functions for multi-variable multi-valued functions and implementing the truncated difference functions to the multiple valued logic circuits with uniform patterns using the current mirror circuits and the inhibit circuits by current-mode CMOS. Also, we apply the presented methods to the implementation of circuits for additive truth table of 2-variable 4-valued MOD(4) and multiplicative truth table of 2-variable 4-valued finite fields GF(4). These circuits are simulated under 2${\mu}{\textrm}{m}$ CMOS standard technology, 15$mutextrm{A}$ unit current, and 3.3V power supply voltage using PSpice. The simulation results have shown the satisfying current characteristics. Both implemented circuits using current-mode CMOS have the uniform Patterns and the regularity of interconnection. Also, it is expansible for the variables of multiple valued logic functions and are suitable for VLSI implementation.