• Membrane Journal
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• v.8 no.3
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• pp.170-176
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• 1998

A study on the bioconversion of soluble starch to cyclodextrin(CD) homologue by CGTase was performed in the membrane-enzyme reactor equipped with a dead-end type membrane module. in the batch reactor, the total conversion of soluble starch to CD homologue was decreased rapidly from a maximum value of 45 % with increasing reaction time due to the product inhibition and breakdown of CD homologue to the reducing sugars. However, in the membrane-enzyme reactor, the total conversion of soluble starch was maintained at a constant value of 35 % throughout the reaction, since the membrane(MWCO = 10,000) promptly separated CD homologue from the reaction mixture. After the macdon for 24 hr in the membrane-enzyme reactor using a 10 % soluble starch solution, the cumulative production amount of CD homologue was about 3.7 kg/m$^2$ at the operating pressure of 2 atm.

• Journal of the Korean Chemical Society
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• v.31 no.5
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• pp.406-412
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• 1987

The electrical conductivities of ${\alpha}-Fe_2O_3$ containing 2.5 and 5.0mol% of cadmium were measured from 300 to $900^{\circ}C$ under oxygen pressures of 10$^{-7}$ to 10$^{-1}$ atmosphere. Plots of log ${\sigma}$ vs. 10$^3$/T show the extrinsic conductivity at oxygen pressure higher than $5{\times}10$^{-2}$atm. The transition points appear at about 550$^{\circ}$C and the activation energies are 1.34 eV for the intrinsic region and 0.50 eV for the extrinsic region on 5mol% Cd-doped ${\alpha}-Fe_2O_3$. The extrinsic conductivity disappears at oxygen partial pressures lower than $5{\times}10$^{-2}$ atm, and the intrinsic conductivity predominates. The electrical conductivities decrease with increasing mol% of cadmium doped. The predominant defect of ${\alpha}-Fe_2O_3$ doped with Cd is believed to be Fe${2+}$ interstitial for the intrinsic, however, oxygen vacancy predominates for the extrinsic region. The electrical conduction mechanisms are proposed and the conduction band model is suggested for the extrinsic region.

• The KIPS Transactions:PartC
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• v.18C no.2
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• pp.71-78
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• 2011

Financial accidents such as password exposure of credit cards or bankbooks occur often when a password is inputted to ATM/CD(Automated Teller Machines and Cash Dispenser), so particular attention is required when inputting a password. This study suggested a method to input a password safely to prevent stealing a glance at a password in case of the use of ATM/CD. The method is that users input a password when numbers are randomly displayed and disappear not to notice the password even though someone is next to or behind the users. As methods to input a password safely, the study verified safety by dividing the methods into a test of shoulder surfing, an intuitive perspective, and a theoretical analysis. In addition, the result of implementation to apply the method to ATM/CD shows that a percentage of acquiring a password from the attack of shoulder surfing is found to be lower than an existing method, so password exposure can be prevented.

• Journal of the Korean Chemical Society
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• v.31 no.3
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• pp.225-230
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• 1987

Electrical conductivity of $CdO-La_2O_3$ system containing 0.8mol% of CdO was measured from 500 to $900^{\circ}C$ at oxygen partial pressures of $10^{-7}\;to\;10^{-1}$ atm. Plots of log ${\sigma}$ vs. 1/T at constant $PO_2$ are found to be linear and the activation energy appears to be 0.97eV. The log ${\sigma}$vs. log $PO_2$ is found to be linear at oxygen pressures of $10^{-7}\;to\;10^{-1}$ atm and $500{\sim}900^{\circ}C$. The conductivity dependence on $PO_2$ at the above temperature range is given by ${\sigma}\;{\alpha}\;PO_2^{1/4}$. The defect structure in this system is believed to be complex, i.e., ${V_{La}}^{'''}$ and $V\"{o}$. The interpretations of conductivity dependences on temperature and $PO_2$ are presented and conduction mechanism is proposed to explain the data.

• The Journal of Society for e-Business Studies
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• v.6 no.2
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• pp.25-38
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• 2001

ATM is the transport method for the broadband integrated services digital networks(B-ISDN). It may replace existing LAN, MAN and WAN technologies such as CSMA/CD, FDDI, Frame relay, X.25, etc. But it is more complicate than existing network technologies. One of the main difficulties in ATM network is performance management. Specifically, the problems are evaluating the performance and tuning the values of the performance parameters, The goal of this paper is to introduce a system architecture designed for ATM network performance management, The major ingredients of the system are generic performance parameters In be measured from ATM network, performance evaluation models and decision criteria concerning the network performance. In this paper, general requirements for performance management application in ATM network are discussed.

• Journal of the Korean Geographical Society
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• v.39 no.5 s.104
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• pp.755-767
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• 2004

Based on a case study of bank's Automatic Teller Machines (ATMs) in Korea, this paper attempts to reveal dynamic changes occurring across the financial landscape with special emphasis on distribution pattern and location factors. Since the distribution of ATMs showed a concentrated pattern similar to that of bank branches, location quotients were examined to consider the effect of branches on ATM distribution. Furthermore, this study identified four factors that play pivotal roles in the location of ATMs. Compared to branch, location of ATM was more closely related to the population and demand factor, while the importance of local economy base and local economic power factor was reduced to some degree. This difference is attributable to the peculiar characteristic of the services offered by ATM. Lastly, demand factor turned out to be most influential in determining the ratio of ATMs to branches in each district, since lower deployment and operation costs allow ATMs to be more flexibly placed where demand for cash services is high.

• Journal of the Korean Chemical Society
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• v.28 no.5
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• pp.315-322
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• 1984

The dependence of polarographic parameters on the pressure for the reduction of In(III), Cr(III), Cd(II), Pb(II), Mn(II), Co(II), Tl(I) in 0.1M KCl aqueous solution at the dropping mercury electrode have been discussed. In this experiment the temperature varied from $25^{\circ}C\;to\;35^{\circ}C$ and the pressure ranges from 1 atmosphere to 1,800 atmospheres. By increasing the pressure the reduction half-wave potentials of all metal ions are shifted markedly to more negative values and the diffusion currents of all metal ions become considerably larger. The slope of the linear relationship of E vs. log[$\frac{id-i)}{i}$] become much larger with increase in pressure, which indicates more irreversible reduction. The temperature coefficient observed over the range of the temperature from $25^{\circ}C\;to\;35^{\circ}C$ are not sensitive with increase in pressure.

• Journal of the Korean Vacuum Society
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• v.1 no.1
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• pp.126-133
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• 1992

This study deals with the crystal growth and the optical characteristics of CdS thin films activatedby silver. CdS:Ag thin films were deposited by using an electron beam evaporation(EBE) technique in vacuumof 1.5X 10-'torr, voltage of 4 kV, current of 2.5 mA and substrate temperature of 250$^{\circ}$C CdS:Ag photoconductivefilms prepared by EBE method show high photoconductivity after annealing at about 550"c for 0.5 h in air andAr gas.The grain size of CdS:Ag thin films annealed in Ar atmosphere (1 atm) was grown over 1 ym and the thicknessof the films is 4-5 pm. The analysis of X-ray diffraction patterns shows that the crystal structures are hexagonal.The diffraction line by (00.2) plane can only be observed, indicating that c-axis of hexagonal grows preferentiallyperpendicular to the substrate. The profiles of photoluminescence spectra of CdS:Ag films show Gaussian typecurves at room temperature, the maximum peak spectral sensitivity of CdS:Ag is located at the wavelength of520 nm.We annealed CdS:Ag thin films in air and Ar vapor in order to make the CdS photoconductors having theintensive photocurrent, the broad distribution of the photocurrent spectrum and the large value of the ratioof the photocurrent (pc) to the dark current(dc). We found that CdS:Ag thin films annealed in air atmospherewas the best one.air atmosphere was the best one.

• The Journal of Internal Korean Medicine
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• v.36 no.4
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• pp.447-457
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• 2015

Objectives: This study was undertaken to investigate how Cortex Phellodendri affects metabolic functional change in an experimental rat model of obesity.Methods: An obesity model was induced in a C57BL/6 mouse with a high-fat diet. Mice were divided into three groups (n=6) of normal diet, high-fat diet (=control), and high-fat diet with Cortex Phellodendri. After 12 weeks, we measured the three mice groups’ body weight, FBG, FBI, HOMA-IR, OGTT, the weight of epididymal fat and liver, the percentage of ATM, and the gene expression of TNF-α, IL-10, and CD68.Results: Cortex Phellodendri significantly reduced blood glucose and oral glucose tolerance levels. It also reduced ATM numbers and TNF-α and CD68 gene expression and increased IL-10 gene expression.Conclusions: This study suggests that Cortex Phellodendri normalized the blood glucose and reduced the expression of inflammatory markers. However, with respect to other indicators of metabolic function in obesity, there were no significant results.

• Bulletin of the Korean Chemical Society
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• v.10 no.5
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• pp.418-422
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• 1989

Cadmium-doped indium sesquioxide systems with a variety of CdO mol % were prepared to investigate the effect of doping on the electrical properties of indium sesquioxide. The electrical conductivities of pure $In_2O_3$ and Cd-doped $In_2O_3$ systems were measured in the temperature range from 25 to $1200^{\circ}C$ and $P_O_2$ range from $10^{-7}$ to $10^{-1}$ atm, and the thermoelectric power was measured in the same temperature range. The electrical conductivity and thermopower decreased with increasing CdO mol % indicating that all the samples are n-type semiconductors. The electrical conductivities of pure $In_2O_3$ and lightly doped $In_2O_3$ were considerably affected by the chemisorption $O_2$ at temperatures of 400 to $560^{\circ}C$ and then gaseous oxygen was reversibly chemisorbed at the temperature. The predominant defects in $In_2O_3$ are believed to be triply-charged interstitial indiums at temperatures above $560^{\circ}C$ and oxygen vacancies below $560^{\circ}C$. In Cd-doped $In_2O_3$ systems, cadmium acts as an electron acceptor and inhibits the transfer of lattice indium to interstitial sites, which give rise to the decrease of the electrical conductivity.