• Nuclear Engineering and Technology
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• 제10권2호
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• pp.73-78
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• 1978

온도 및 연신율변화 (strain-rate change)가 $\alpha$-uranium의 변형거동에 미치는 영향을 30$0^{\circ}C$에서 55$0^{\circ}C$까지 연구하였으며, strain rate sensitivity, activation volume, strain rate sensitivity exponent 및 dislocation velocity exponent을 조사하였다. 40$0^{\circ}C$이하에서 strain rate sensitivity exponent는 strain의 증가에 따라 증가하였으나 50$0^{\circ}C$이상에서는 strain의 증가에 따라 감소하는 경향을 나타냈다. 40$0^{\circ}C$이하에서는 strain에 의해 생기는 가공경화로 인한 내부 용력의 증가가 strain rate sensitivity exponent에 영향을 미치나 50$0^{\circ}C$이상에서는 많은 slip system이 변형에 기여하게 되므로 가공경화 보다는 thermal softening이 더 큰 영향을 미쳐서 strain rate sensitivity가 감소된다고 추측된다.

• 한국세라믹학회지
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• 제36권9호
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• pp.901-908
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• 1999

Effects of LPMOCVD process parameters on the properties of TiO2 thin film were investigated. Depositions were made in the range of temperature 300-67$0^{\circ}C$ with various TTIP(Titanium Tetraisopropoxide) concentrations by contrlling bubbler temperature(40-8$0^{\circ}C$) and/or flow rate(30-90 sccm). Post annealing treatments were carried out at 500-80$0^{\circ}C$ range in the air. Films deposited at 40$0^{\circ}C$ have denser morphology than those of films deposited at 50$0^{\circ}C$ and $600^{\circ}C$ due to slower deposition rate. Bubbler temperature can affect on the deposition rate in mass transfer controlled regime such as 50$0^{\circ}C$ or higher but not below 50$0^{\circ}C$ where surface reaction rate becomes important. On the contrary for films deposited above 50$0^{\circ}C$ flow rate can raise deposition rate but eventually saturate it at the 50 sccm and above due to retarded adhesion of decomposed species. But for films deposited at 40$0^{\circ}C$ deposition rate increases stadily with flow rate. As the film becomes more porous A(200) texture can not be developed and AnataselongrightarrowRutile transition kinetics increases.

• 한국콘크리트학회:학술대회논문집
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• 한국콘크리트학회 1997년도 가을 학술발표회 논문집
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• pp.215-222
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• 1997

Flow experimental on not to be solid mortar which use Quenched Blast-furnace Slag as a fine aggregate was carried out for basic research data about fundamental study of application possibility of Quenched Blast-furnace Slag as a fine aggregate. It gives following result. The substitution rate is inversely proportional to Flow and C/S-rate same that. The relation with W/C-rate augment appear proportional : in case of C/S-rate, 1:3 increasing degree is a half of sand mortar that. Consequencely, Quenched Blast-furnace Slag motar is a counteraction to Flow in as same water content per unit. But suitable substitution rate and C/S-rate influence a little to the mortar consistency. And that reason, if C/S-rate and substitution rate will be regulated when we mix the mortar with quenched Blast-furnace Slag. that will be economic mixture.

• Journal of Preventive Medicine and Public Health
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• 제16권1호
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• pp.89-97
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• 1983

From January to March in 1979 and 1982, the vaccination rate of B.C.G., D.P.T and Sabin with 392 infants who were registered at M.C.H. room in a Health Center in Seoul were as follows: 1 There were no specific relations between the sex and the vaccination for B.C.G., D.P.T. and Polio. 2. In 1982, the younger the mother's age was, the higher the vaccination rate for B.C.G. was. For the D.P.T. and Polio the rate of above 35 year group was the highest but the completion rate of the vaccination and the regular vaccination rate were the highest in the age of 30-34 year group. 3. In 1982. the higher the educational levels of tile mother were, the higher the vaccination rates for B.C.G., D.P.T. and Polio were. 4. The vaccination rate for B.C.G. within a month after birth was the highest in Salaried laborer group. The completion rate of the vaccination and regular vaccination rate for D.P.T. add Polio were also the highest in salaried laborer group. 5. In 1982, the rates of all vaccination for B.C.G. were tile highest in the first child. The completion rate of the vaccination and regular vaccination rate for D.P.T and Polio were also the highest in the first child in 1982.

• 대한임베디드공학회논문지
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• 제2권1호
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• pp.24-30
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• 2007

According to development of wireless communication technologies, we need not only high data rate but low data rate system of low power consumption. This low data rate system is utilized in the field of home automation, health care, sensoring and monitoring, etc. IEEE 802.15.4 LR-WPAN system is the best choice for realizing ubiquitous networking system. In this paper SoC Architecture for IEEE 802.15.4 Low Rate WPAN is designed. IEEE 802.15.4 Low Rate WPAN system serves the functions and realization of home area network. We propose the SoC architecture for 868/915MHz frequency band of IEEE 802.15.4 Low Rate WPAN system. The key issue is to design SoC architecture which provides the function of Low Rate WPAN system to meet the requirement of IEEE 802.15.4 standards.

• 한국양식학회지
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• 제15권2호
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• pp.79-86
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• 2002

This study is the first attempt to understand the feeding physiology of a sea-urchin larva on a red-tide dinoflagellate. Fifteen day old larvae of S. intermedius capture C. polykrikoides cells by localized reversal of ciliary beats. No failure to transporte the algal cells from theciliated band to mouth and no rejection at the mouth suggest that C. polykrikoides has no feeding deterrence to S. intermedius larvae. The trend obtained for the clearance rate of S. intermedius larvae is similar to that of other sea urchin larvae. Thus, the clearance rate decreased as the algal concentration increased. Maximum clearance rate of S. intermedius on C. polykrikoides was 17.7 $\mu l$/larva/hr. Ingestion rate rapidly increased at lower algal concentrations and saturated at higher concentrations. There was no inhibition in ingestion rate at the highest prey concentration of ca. 3000 cells/ml. Maximum ingestion rate of S. intermedius on C. polykrikoides was 131 ngC/larva/d, which is higher than that reported for the larvae of the mussel Mytilus gal-lotrovincialis, but lower than that of the ciliate Strombidinopsis sp. The grazing rate, calculated by combining the field data on algal abundances with experimental data on ingestion rate, suggests that due to its low abundance, sea urchin Iarva has no significant grazing impact on C. polykrikoides population.

• 한국세라믹학회지
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• 제42권1호
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• pp.33-36
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• 2005

저온 소결용 PMN-PT-BT분말을 $850^{circ}C/2h$ 소결할 때 승온 속도를 분당 5, 10, $20^{circ}C$로 변화하며 물성에 미치는 영향을 조사하였다. PbO(응점 $886^{circ}C$)의 휘발이 미미한 소결온도에서는 분당 $5^{circ}C$로 승은하여 소결한 것이 승온 속도 $10^{circ}C$나 $20^{circ}C$의 경우에 비하여 보다 균일한 미세구조를 나타내며, 소결밀도 $7.93g/cm^{3}$, 실온 유전을 15300, 유전손실 $0.92\%의 우수한 유전 특성을 나타내었다.

• 한국결정학회지
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• 제3권1호
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• pp.23-30
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• 1992

단결정 a-SiC성장시 결정성장로의 감압속도가 결정 성장 속도, 결정성, 성장방향에 미치는 영향 을 고찰해 보기 위해서 승화법으로 (001)면 a-SiC 단결정 종자정위에 단결정 a-SiC를 성장시켰다. 결정성장 초기에는 성장로의 빠른 감압 속도에 따라 결정성장속도가 빨라지고 3C-SiC 다결정이 종자정위에 성장하였고, 감압속도를 느리게 한 경우에는 결정성장 속도가 느려지고 6H-SiC 단결정이 성장하였다. 초기에 단결정층이 성장하는 조건 하에서 2시간 성장후의 단면 성장 양상을 보면, 종자정 하단에서 발생하는 낙은 종자정의 연속적 인 승화 때문에 종자정과 초기의 단결정층이 소멸 되고, 종자정이 놓여있던 혹연 도가니의 바닥으로부터 연속적으로 다결정 층이 성장된 것이 관찰되었다. 그러나, 이러한 종자정의 승화 소멸은 초기 성장 후 냉각과정을 거치고 다시 승온시키는 두 단계 공정을 사용함으로써 효과적으로 억제시킬 수 있었다. 이와같은 방법으로 장시간 성장시킨 결정은 6H-HiC 단결정이었으며, (001) 방향으로 성장하였다.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2016년도 추계학술대회 논문집
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• pp.178-179
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• 2016

본 논문에서는 바나듐 레독스 플로우 배터리의 동작원리를 설명하고, C-rate에 따른 특성 분석을 하였다. 전해질 양이 18mL, 22mL일 때 0.1C, 0.3C, 0.5C, 0.7C, 0.9C, 1.0C로 전류의 크기에 변화를 주어 용량을 측정한 후 비교 분석하였다. 더불어 HPPC(Hybrid pulse power characterization) 실험에서 1.0C 일 때 잔존 용량(State-of-charge, SOC)의 변화에 따른 저항을 추출하였고 분석하였다. 그 결과 바나듐 레독스 플로우 배터리의 효율 분석을 위한 파라미터 값을 확인하였다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2002년도 하계학술대회 논문집 C
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• pp.1593-1595
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• 2002

Single crystal 3C-SiC(cubic silicon carbide) thin-films were deposited on Si(100) wafers up to a thickness of 4.3 ${\mu}m$ by APCVD method using HMDS(hexamethyildisilane) at $1350^{\circ}C$. The HMDS flow rate was 0.5 sccm and the carrier gas flow rate was 2.5 slm. The HMDS flow rate was important to get a mirror-like crystal surface. The growth rate of the 3C-SiC films was 4.3 ${\mu}m/hr$. The 3C-SiC epitaxial films grown on Si(100) were characterized by XRD, AFM, RHEED, XPS and raman scattering, respectively. The 3C-SiC distinct phonons of TO(transverse optical) near 796 $cm^{-1}$ and LO(longitudinal optical) near $974{\pm}1cm^{-1}$ were recorded by raman scattering measurement. The hetero-epitaxially grown films were identified as the single crystal 3C-SiC phase by XRD spectra($2{\theta}=41.5^{\circ}$).