• 전기전자학회논문지
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• 제23권2호
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• pp.350-357
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• 2019

본 연구에서는 전체 태양광발전소의 80%를 차지하고 있는 소규모 태양광발전소의 에너지저장장치 연계에 따른 시스템 효율을 분석하였다. 설치용량이 100kW인 태양광발전소의 데이터를 수집하고 각 발전소의 PCS와 배터리의 용량에 따른 ESS 효율의 상관관계를 도출하였으며 결론적으로 배터리의 방전속도에 영향을 미치는 C-Rate의 수치가 높을수록 ESS의 방전효율이 높아지는 것으로 나타난다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1993년도 춘계학술대회 논문집
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• pp.72-75
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• 1993

The characteristic of streaming electrification and static charge diminution in Cu, Fe and Sus pipes were investigated. The Cu and Fe pipes are charged positively, whereas the Sus pipes are charged negatively. Electrification rate in Cu and Fe pipes increases with increasing a pipe length for no-charged insulating oil. The electrification rate in Cu and Fe pipes abruptly increase with increasing the temperature and flow rate of insulating oil but decrease in Sus pipes. The current flows as a direction of insulating oil in all pipes.

• 반도체디스플레이기술학회지
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• 제17권2호
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• pp.6-11
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• 2018

In this study, we have studied the effect of substrate temperature and hydrogen flow rate on the characteristics of MZO thin films for the TCO(Transparent conducting oxide). MZO thin films were deposited by RF magnetron sputtering at room temperature and $100^{\circ}C$ with various $H_2$ flow rate(1sccm~4sccm). In order to investigate the effect of hydrogen gas flow rate on the MZo thin film, we experimented with changing the hydrogen in argon mixing gas flow rate from 1.0sccm to 4.0sccm. MZO thin films deposited at room temperature and $100^{\circ}C$ show crystalline structure having (002), (103) preferential orientation. The electrical resistivity of the MZO films deposited at $100^{\circ}C$ was lower than that of the MZO film deposited at room temperature. The decrease of electrical resistivity with increasing substrate temperature was interpreted in terms of the increase of the charge carrier mobility and carrier concentration which seems to be due to the oxygen vacancy generated by the reducing atmosphere in the gas. The average transmittance of the MZO films deposited at room temperature and $100^{\circ}C$ with various hydrogen gas flow was more than 80%.

• 대한전자공학회논문지
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• 제16권1호
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• pp.26-32
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• 1979

실리콘의 dry oxidation과 wet oxidation공정의 특성을 실험적으로 조사하였다. 산화온도는1,100℃, 1.150℃, 1.200℃를 사용하였고, 산소의 유량은 0.2 liter/min으로 부터 2.8 liter/min까지 변화시켰다. 산화막의 두께를 측정하여 0.1μ ∼ 1.0μ 을 성장시키는데 필요한 온도, 시간, 산소의 유량을 도표로 나타냈다. 산화막의 특성을 조사하기 위하여 유전 상수 절연파괴 전압, fixed surface charge density (Qss/q), mobile ciarge densify (Q /q)를 측정하였다. 측정 결과로부터 산화막이 MOS transistor에도 적합한 양질이라는 결론을 얻었다.

• 대한설비공학회:학술대회논문집
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• 대한설비공학회 2008년도 동계학술발표대회 논문집
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• pp.310-315
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• 2008

In this study, experimental study on the heating performance of a $CO_2$ heat pump water heater with a variation of operating conditions such as refrigerant charge amount, outdoor temperature, compressor frequency, EEV opening and water mass flow rate. Based on the test results, the optimum charge amount was 1800 g. At the water mass flow rates of 75, 85, 95 kg/hr, the water heating temperature was 62, 67, $74^{\circ}C$ and COP was 2.6, 2.8, 3.0, respectively. Besides, the water mass flow rate and compressor frequency were varied to maintain above the water heating temperature of $60^{\circ}C$ with the decrease of outdoor temperature. So, The compressor frequency increased beyond 65 Hz and the water mass flow rate was 45 kg/hr at the outdoor temperature of $-13^{\circ}C$, 65 kg/hr at $-8^{\circ}C$, 75 kg/hr at $-3^{\circ}C$ and 85 kg/hr at 2, $7^{\circ}C$. As the outdoor temperature decreased, the heating COP decreased by 2.5-39.8%.

• 한국전기전자재료학회논문지
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• 제26권9호
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• pp.656-661
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• 2013

In this study, the moisture content, charge discharge current, electrostatic capacity and dielectric loss tangent are measured for the specimen of bisphenol type epoxy resin which is mixed with squared amorphous silica filler and dipped in hot water of $50^{\circ}C$ for 169 days. The results of this study are listed below. The longer of deposition day, the charge and discharge current was increased. It is considered that the reason is because there was water attack through the squared silica surface. The longer of deposition day, the absorption rate of all specimens was increased. It found that the absorption rate reached saturated state after 100 days. The higher frequency and the longer of deposition day, the $tan{\delta}$ was decreased. Also, It found that the $tan{\delta}$ and electrostatic capacity of the specimen which is mixed with squared filler are greater.

• 공업화학
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• 제10권8호
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• pp.1192-1199
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• 1999

Ni/Cd 전지의 페이스트식 카드뮴전극에 있어서 방전시 생성되는 $Cd(OH)_2$의 구조를 전해액에 의하여${\gamma}-Cd(OH)_2$의 구조로 변화시켜 전극에 활물질을 고밀도로 충전시키므로써 전극의 특성을 향상시켰다. 전해액은 KOH 수용액에 NaOH를 농도별로 첨가하여 사용하였다. NaOH를 1.82 M 첨가한 전해액 내에서 충 방전한 전극의 활물질 이용률이 가장 높았으며, NaOH 첨가량의 증가에 의해 방전생성물인 $Cd(OH)_2$는 ${\beta}$상에서 ${\gamma}$상으로 변화하는 정도가 증가하였다. 방전시 NaOH가 참가된 전해액에서 생성된 ${\gamma}-Cd(OH)_2$구조의 활물질 비표면적은 NaOH가 첨가되지 않은 전해액에서 생성된 ${\beta}-Cd(OH)_2$ 구조의 활물질 비표면적에 비하여 170% 이상 증가하였다. 밀폐형 전지에서는 NaOH가 첨가된 전해액의 전지가 첨가되지 않은 전지에 비하여 1.0 C와 2.0 C rate의 고율 충 방전 조건에서 방전용량이 증가하였으며, 1.0 C rate의 cycle에서도 향상된 성능이 500 cycle까지 지속되었다.

• 반도체디스플레이기술학회지
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• 제15권4호
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• pp.46-50
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• 2016

In this study, we have investigated the effect of the substrate temperature and hydrogen flow rate on the characteristics of IGZO thin films for the TCO(transparent conducting oxide). For this purpose, IGZO thin films were deposited by RF magnetron sputtering at room temperature and $300^{\circ}C$ with various $H_2$ flow rate. In order to investigate the influences of the hydrogen, the flow rate of hydrogen in argon mixing gas has been changed from 0.1sccm to 1.0sccm. IGZO thin films deposited at room temperature show amorphous structure, whereas IGZO thin films deposited at $300^{\circ}C$ show crystalline structure having an (222) preferential orientation. The electrical resistivity of the amorphous-IGZO films deposited at R.T. was lower than that of the crystalline-IGZO thin films deposited at $300^{\circ}C$. The increase of electrical resistivity with increasing substrate temperature was interpreted in terms of the decrease of the charge carrier mobility. The transmittance of the IGZO films deposited at $300^{\circ}C$ was decreased deposited with hydrogen gas.

• Bulletin of the Korean Chemical Society
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• 제20권10호
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• pp.1181-1185
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• 1999

The reaction of FeC5H5+ ion with ferrocene molecule is investigated using FT-ICR mass spectrometry. FeC5H5+ ions are generated by dissociative ionization of ferrocenes using an electron beam. The reaction gives rise to the formation of the adduct ion, Fe2(C5H5)3+, in competition with charge transfer reaction leading to the formation of ferrocene molecular ion, Fe(C5H5)2+·. The branching ratio of the adduct ion increases as the internal energy of the reactant ion decreases and correspondingly the branching ratio for the charge transfer reaction product decreases. The observed rate of the addition reaction channel is slower than that of the charge transfer reaction. The observation of the stable adduct ions in the low-pressure ICR cell is attributed to the radiative cooling of the activated ion-molecule complex. The mechanism of the reaction is presented to account for the observed experimental results.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.492-496
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• 2001

Due to their better photosensitivity in X-ray, the amorphous selenium based photoreceptor is widely used on the X-ray conversion materials. It was possible to control the charge carrier transport of amorphous selenium by suitably alloying a-Se with other elements(e,g. As, Cl). In this paper, We investigated dopants(As, Cl) composition rate to improve dark resistivity and transport properties of charge carrier in amorphous selenium using by direct X-ray conversion material. Alloying a-Se with As inhibits the recrystallization of a-Se but introduces undesirable deep hole traps. then doping with Cl(in the ppm range) compensates for the deep hole traps. We investigated their composition rate in various doping conditions and then obtained optimum dopant composition rate. The result was Se-As 0.3%-c] 30 ppm and X-ray Sensitivity was 0.57 pC/$pixel{\cdot}mR$ at $137{\mu}m{\times}137{\mu}m$ Pixel area.