• Nuclear Engineering and Technology
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• v.10 no.2
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• pp.73-78
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• 1978

The effect of temperature and strain rate on the deformation behavior of $\alpha$-uranium was investigated in the temperature ranged 300$^{\circ}$ to 55$0^{\circ}C$ by strain, rate change test. Strain rate sensitivity, activation volume, strain rate sensitivity exponent and dislocation velocity exponent were determined. The strain rate sensitivity exponent and dislocation velocity exponent were determined. The strain rate sensitivity exponent increases with strain below 40$0^{\circ}C$, while the exponent decreases with strain above 50$0^{\circ}C$. It is believed that the increase of strain rate sensitivity exponent with strain below 40$0^{\circ}C$ can be attributed to an increase in internal stress as a result of work hardening while decrease of the exponent with strain above 50$0^{\circ}C$ is due to predominance of thermal softening over work hardening because more slip, system are active in deformation above about 50$0^{\circ}C$.

• Journal of the Korean Ceramic Society
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• v.36 no.9
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• pp.901-908
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• 1999

Effects of LPMOCVD process parameters on the properties of TiO2 thin film were investigated. Depositions were made in the range of temperature 300-67$0^{\circ}C$ with various TTIP(Titanium Tetraisopropoxide) concentrations by contrlling bubbler temperature(40-8$0^{\circ}C$) and/or flow rate(30-90 sccm). Post annealing treatments were carried out at 500-80$0^{\circ}C$ range in the air. Films deposited at 40$0^{\circ}C$ have denser morphology than those of films deposited at 50$0^{\circ}C$ and $600^{\circ}C$ due to slower deposition rate. Bubbler temperature can affect on the deposition rate in mass transfer controlled regime such as 50$0^{\circ}C$ or higher but not below 50$0^{\circ}C$ where surface reaction rate becomes important. On the contrary for films deposited above 50$0^{\circ}C$ flow rate can raise deposition rate but eventually saturate it at the 50 sccm and above due to retarded adhesion of decomposed species. But for films deposited at 40$0^{\circ}C$ deposition rate increases stadily with flow rate. As the film becomes more porous A(200) texture can not be developed and AnataselongrightarrowRutile transition kinetics increases.

• Proceedings of the Korea Concrete Institute Conference
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• 1997.10a
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• pp.215-222
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• 1997

Flow experimental on not to be solid mortar which use Quenched Blast-furnace Slag as a fine aggregate was carried out for basic research data about fundamental study of application possibility of Quenched Blast-furnace Slag as a fine aggregate. It gives following result. The substitution rate is inversely proportional to Flow and C/S-rate same that. The relation with W/C-rate augment appear proportional : in case of C/S-rate, 1:3 increasing degree is a half of sand mortar that. Consequencely, Quenched Blast-furnace Slag motar is a counteraction to Flow in as same water content per unit. But suitable substitution rate and C/S-rate influence a little to the mortar consistency. And that reason, if C/S-rate and substitution rate will be regulated when we mix the mortar with quenched Blast-furnace Slag. that will be economic mixture.

• Journal of Preventive Medicine and Public Health
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• v.16 no.1
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• pp.89-97
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• 1983

From January to March in 1979 and 1982, the vaccination rate of B.C.G., D.P.T and Sabin with 392 infants who were registered at M.C.H. room in a Health Center in Seoul were as follows: 1 There were no specific relations between the sex and the vaccination for B.C.G., D.P.T. and Polio. 2. In 1982, the younger the mother's age was, the higher the vaccination rate for B.C.G. was. For the D.P.T. and Polio the rate of above 35 year group was the highest but the completion rate of the vaccination and the regular vaccination rate were the highest in the age of 30-34 year group. 3. In 1982. the higher the educational levels of tile mother were, the higher the vaccination rates for B.C.G., D.P.T. and Polio were. 4. The vaccination rate for B.C.G. within a month after birth was the highest in Salaried laborer group. The completion rate of the vaccination and regular vaccination rate for D.P.T. add Polio were also the highest in salaried laborer group. 5. In 1982, the rates of all vaccination for B.C.G. were tile highest in the first child. The completion rate of the vaccination and regular vaccination rate for D.P.T and Polio were also the highest in the first child in 1982.

• IEMEK Journal of Embedded Systems and Applications
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• v.2 no.1
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• pp.24-30
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• 2007

According to development of wireless communication technologies, we need not only high data rate but low data rate system of low power consumption. This low data rate system is utilized in the field of home automation, health care, sensoring and monitoring, etc. IEEE 802.15.4 LR-WPAN system is the best choice for realizing ubiquitous networking system. In this paper SoC Architecture for IEEE 802.15.4 Low Rate WPAN is designed. IEEE 802.15.4 Low Rate WPAN system serves the functions and realization of home area network. We propose the SoC architecture for 868/915MHz frequency band of IEEE 802.15.4 Low Rate WPAN system. The key issue is to design SoC architecture which provides the function of Low Rate WPAN system to meet the requirement of IEEE 802.15.4 standards.

• Journal of Aquaculture
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• v.15 no.2
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• pp.79-86
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• 2002

This study is the first attempt to understand the feeding physiology of a sea-urchin larva on a red-tide dinoflagellate. Fifteen day old larvae of S. intermedius capture C. polykrikoides cells by localized reversal of ciliary beats. No failure to transporte the algal cells from theciliated band to mouth and no rejection at the mouth suggest that C. polykrikoides has no feeding deterrence to S. intermedius larvae. The trend obtained for the clearance rate of S. intermedius larvae is similar to that of other sea urchin larvae. Thus, the clearance rate decreased as the algal concentration increased. Maximum clearance rate of S. intermedius on C. polykrikoides was 17.7 $\mu l$/larva/hr. Ingestion rate rapidly increased at lower algal concentrations and saturated at higher concentrations. There was no inhibition in ingestion rate at the highest prey concentration of ca. 3000 cells/ml. Maximum ingestion rate of S. intermedius on C. polykrikoides was 131 ngC/larva/d, which is higher than that reported for the larvae of the mussel Mytilus gal-lotrovincialis, but lower than that of the ciliate Strombidinopsis sp. The grazing rate, calculated by combining the field data on algal abundances with experimental data on ingestion rate, suggests that due to its low abundance, sea urchin Iarva has no significant grazing impact on C. polykrikoides population.

• Journal of the Korean Ceramic Society
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• v.42 no.1
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• pp.33-36
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• 2005

Effect of heating rate was studied on consolidation of the low-temperature-sinterable PMN-PT-BT powder by varying the heating rate from 5, 10, to $20^{circ}C/min$. Slow rate of $5^{circ}C/min$ showed more homogeneous microstructure than high rate of 10 or $20^{circ}C/min$ due to low PbO (m.p. $886^{circ}C$) evaporation at 850^{circ}C$. It showed sintered density of $7.93 g/cm^{3}$, room temperature dielectric constant of 15300, and dissipation factor of $0.92\%$.

• Korean Journal of Crystallography
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• v.3 no.1
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• pp.23-30
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• 1992

a-SiC crystals were grown on the (001) plane of a-SiC seed crystals by sublimation method to find effects of pressure-reduction rate of the crystal growth furnace own the growth rate and orientstion of grown SiC crystals. Pressure-reduction rate at the initial growth stage affected the crystallinity of grown SiC crystals. In case of high pressure-reduction rate, growth rate was high and 3csic polycrystalline was grown on the seed. On the other hand, low pressure-reduction rate caused the growth rate to be slow and 6H-SiC single crystal was grown on the seed. However, even after growing SiC for 2 hours under the condition in which.

• Proceedings of the KIPE Conference
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• 2016.11a
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• pp.178-179
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• 2016

본 논문에서는 바나듐 레독스 플로우 배터리의 동작원리를 설명하고, C-rate에 따른 특성 분석을 하였다. 전해질 양이 18mL, 22mL일 때 0.1C, 0.3C, 0.5C, 0.7C, 0.9C, 1.0C로 전류의 크기에 변화를 주어 용량을 측정한 후 비교 분석하였다. 더불어 HPPC(Hybrid pulse power characterization) 실험에서 1.0C 일 때 잔존 용량(State-of-charge, SOC)의 변화에 따른 저항을 추출하였고 분석하였다. 그 결과 바나듐 레독스 플로우 배터리의 효율 분석을 위한 파라미터 값을 확인하였다.

• Proceedings of the KIEE Conference
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• 2002.07c
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• pp.1593-1595
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• 2002

Single crystal 3C-SiC(cubic silicon carbide) thin-films were deposited on Si(100) wafers up to a thickness of 4.3 ${\mu}m$ by APCVD method using HMDS(hexamethyildisilane) at $1350^{\circ}C$. The HMDS flow rate was 0.5 sccm and the carrier gas flow rate was 2.5 slm. The HMDS flow rate was important to get a mirror-like crystal surface. The growth rate of the 3C-SiC films was 4.3 ${\mu}m/hr$. The 3C-SiC epitaxial films grown on Si(100) were characterized by XRD, AFM, RHEED, XPS and raman scattering, respectively. The 3C-SiC distinct phonons of TO(transverse optical) near 796 $cm^{-1}$ and LO(longitudinal optical) near $974{\pm}1cm^{-1}$ were recorded by raman scattering measurement. The hetero-epitaxially grown films were identified as the single crystal 3C-SiC phase by XRD spectra($2{\theta}=41.5^{\circ}$).