• JSTS:Journal of Semiconductor Technology and Science
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• v.4 no.3
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• pp.240-249
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• 2004

In the present paper efforts have been made to optimize InAlAs/InGaAs HEMT by enhancing the effective gate voltage ($(V_c-V_off)$) using pulsed doped structure from uniformly doped to delta doped for microwave frequency applications and reliability. The detailed design criteria to select the proper design parameters have also been discussed in detail to exclude parallel conduction without affecting the del ice performance. Then the optimized value of $V_c-V_off$and breakdown voltages corresponding to maximum value of transconductance has been obtained. These values are then used to predict the transconductance and cut-off frequency of the del ice for different channel depths and gate lengths.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.6 no.3
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• pp.463-470
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• 1996

Ceramic membrane consisting of an ${\alpha}-Al_{2}O_{3}$ support and Fe doped $TiO_{2}$ top layer was prepared by the sol-gel method. The supported Fe doped $TiO_{2}$ top layer was made by dip coating the support in a mixed sol. The microstructure of the composite membranes was studied by SEM after calcination at $550~850^{\circ}C$. After sintering at $650^{\circ}C$ for 1 hr., the average particle diameter of the Fe doped $TiO_{2}$ top layer was ~40 nm. The supported Fe doped $TiO_{2}$ composite membranes exhibited much higher heat resistance than the $TiO_{2}$ membrane. The Fe doped $TiO_{2}$ composite membrane retained a crack-free microstructure and narrow particle size distribution even after calcination up to $650^{\circ}C$.

• Carbon letters
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• v.15 no.4
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• pp.277-281
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• 2014

A series of high capacity soft carbons with different phosphorus contents were successfully prepared by carbonizing petroleum cokes treated with hypophosphorous acid at $900^{\circ}C$. The effect of phosphorus content on the electrochemical performance of the soft carbons was extensively investigated. The P-doped soft carbons exhibited greatly enhanced discharge capacities and outstanding rate capabilities with increasing phosphorus content. In addition, the influence of temperature on the electrochemical behaviors of the soft carbons was investigated in a wide temperature range of $25^{\circ}C$ to $50^{\circ}C$. Surprisingly, the electrochemical properties of the pristine and P-doped soft carbons were highly sensitive to the operating temperature, unlike conventional graphite. The pristine and P-doped soft carbons exhibited significantly high discharge capacities of 470 and 522 mAh/g, respectively, at a high temperature of $50^{\circ}C$.

• Journal of Powder Materials
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• v.17 no.4
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• pp.281-288
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• 2010

A carbon doped $TiO_2$ (C-$TiO_2$) photocatalyst, which shows good photocatalytic activity to Ultraviolet irradiation and visible irradiation, was successfully prepared by co-grinding of $TiO_2$ with ethanol or Activated Carbon(C), followed by heat treatment at $200^{\circ}C$ in air for 60 min. Ethanol and C were used as a representative agent of liquid and solid for carbon doping. Their influence on improving photocatalytic ability and carbon doping degree was studied with degradation of methyl orange and XPS analysis. The product prepared by co-grinding of $TiO_2$ with Ethanol had Ti-C and C-O chemical bonds and showed higher photocatalytic activity than the product prepared by co-grinding of $TiO_2$ with C, where just C-O chemical bond existed. As a result, mechanochemical route is useful to prepare a carbon doped $TiO_2$ photocatalyst activating to visible irradiation, where the solid-liquid operation is more effective than solid-solid operation to obtain a carbon doped $TiO_2$.

• Korean Journal of Metals and Materials
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• v.50 no.11
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• pp.839-845
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• 2012

The effect of an AlN additive on the thermoelectric properties of SiC ceramics was studied. Porous SiC ceramics with 48-54% relative density were fabricated by sintering the pressed ${\alpha}-SiC$ powder compacts with AlN at $2100-2200^{\circ}C$ for 3 h in an Ar atmosphere. In the undoped specimens, the Seebeck coefficients were positive (p-type semiconducting) possibly due to a dominant effect of the acceptor impurities (Al, Fe) contained in the starting powder. With AlN addition, the reverse phase transformation of 6H-SiC to 4H-SiC was observed during the sintering process. The electrical conductivity of the AlN doped specimen was larger than that of the undoped specimen under the same conditions, which might be due to a reverse phase trans-formation. The Seebeck coefficient of the AlN doped specimen was also larger than that of the undoped specimen. The density of specimen and the amount of addition had significant effects on the thermoelectric properties.

• Proceedings of the Materials Research Society of Korea Conference
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• 2005.05a
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• pp.246-246
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• 2005

• Journal of Magnetics
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• v.17 no.1
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• pp.9-12
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• 2012

Attempts to dope carbon nanotube (CNT) with impurities in order to control the electronic properties of the CNT is a natural course of action. Boron is known to improve both the structural and electronic properties. In this report, we study the field emission properties of Boron-doped double-walled CNT (DWCNT). Boron-doped DWCNT films were fabricated by catalytic decomposition of tetrahydrofuran and triisopropyl borate over a Fe-Mo/MgO catalyst at $900^{\circ}C$. We measured the field emission current by varying the doping amount of Boron from 0.8 to 1.8 wt%. As the amount of doped boron in the DWCNT increases, the turn-on-field of the DWCNT decreases drastically from 6 V/${\mu}m$ to 2 V/${\mu}m$. The current density of undoped CNT is 0.6 mA/$cm^2$ at 9 V, but a doped-DWCNT sample with 1.8 wt% achieved the same current density only at only 3.8 V. This shows that boron doped DWCNTs are potentially useful in low voltage operative field emitting device such as large area flat panel displays.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.168-168
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• 2012

본 연구에서는 Molybdenum oxide (MoOx)-doped 4,4',4"-tris[2-naphthyl(amino)] triphenylamine(2-TNATA)의 P-doping에 의한 hole ohmic contact과 fullerene (C60)/lithium (LiF)의 electron ohmic contact에 의한 All Ohmic contact를 이용한 유기 발광 다이오드 (OLEDs)의 광저항 특성의 향상을 설명한다. 이 소자의 성능은 MoOx-doped 2-TNATA의 두께와 도핑농도에 큰 영향을 받는다. glass/ITO/MoOx-doped 2-TNATA (100 nm)/Al 구조의 소자에서 MoOx-doped 2-TNATA 도핑 농도가 25%에서 75%로 증가할수록 hole only device의 hole ohmic 특성이 향상됐다. 그 이유는 p-type doping effect 때문이다. 또한 photoemission spectra 분석결과, p-type doping effect는 hole-injecting barrier 높이는 낮추고, hole conductivity는 향상되었다. 이것은 2-TNATA에 도핑된 MoOx의 전하전송 콤플렉스의 형성으로 hole carrier의 수가 증가하여 발생되었다. MoOx-doped 2-TNATA의 hole ohmic contact과 fullerene (C60)/lithium fluoride (LiF)의 electron ohmic contact 으로 구성된 glass/ITO/MoOx-doped 2-TNATA (75%, 60 nm)/NPB (10 nm)/Alq3 (35 nm)/C60 (5 nm)/LiF (1 nm)/Al (150 nm)의 소자구조는 6,4V에서 127,600 cd/m2 최대 휘도와 약 1,000 cd/m2에서 4.7 lm/W의 높은 전력 효율을 보여준다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.43-46
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• 2002

Ferroelectric Mg-doped SBT and Ti-doped SBT were successfully deposited on Pt/Ti/$SiO_2/Si$ substrate by using a sol-gel solution coating method. The solutions were prepared through out adding the metal alkoxide solutions to SBT solution. The typical hysteresis loop of the films was obtained at 5V. The measured $2P_r$ value were $16.50{\mu}C/cm^2$ for SBT, $18.98{\mu}C/cm^2$ and for Mg-doped SBT, and $17.10{\mu}C/cm^2$ for Ti-doped SBT at an applied voltage of 5V, respectively. And it is found that the leakage current densities are less than $10^{-7}A/cm^2$ when applied voltage is less than 10.8MV/cm, which indicates the excellent insulating characteristics.

• Journal of the Korean Ceramic Society
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• v.27 no.4
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• pp.501-512
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• 1990

Al2O3 and 0.25wt% MgO-doped Al2O3 powders were made from the alcohol solution of Al(NO3)3.9H2O and Mg(NO3)2.6H2O by spray pyrolysis method. Each powder was prepared at 900 and 100$0^{\circ}C$. Powders prepared at 90$0^{\circ}C$ were amorphous phase, but prepared at 100$0^{\circ}C$ wre mainly ${\gamma}$-Al2O3 crystalline form. Particle size of the MgO-doped Al2O3 powders was in the range of 0.2-2${\mu}{\textrm}{m}$, but undooped powders shwoed comparatively wider range of particle size. All the powders prepared at 900 and 100$0^{\circ}C$ were transformed to $\alpha$-Al2O3 crystalline form by calcination at 110$0^{\circ}C$ for 1hr. Each powder was sintered at 1600, 1650 and 1$700^{\circ}C$ for 2hrs. MgO-doped Al2O3 body sintering at 1$650^{\circ}C$ showed 99% of relative density but undooped Al2O3 showed 95% of relative density, even sintered at higher temperature of 1$700^{\circ}C$.