• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.336-336
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• 2013

Zinc oxide (ZnO) based transparent oxide semiconductors have been studied due to their high transmittance and electrical conductivity. Pure ZnO have unstable optical and electrical properties at high temperatures but doped ZnO thin films can have stable optical and electrical properties. In this paper, transparent oxide semiconductors of Y-doped ZnO thin films prepared by sol-gel method. The ionic radius of $Y^{3+}$ (0.90 A) is close to that of $Zn^{2+}$ (0.74 A), which makes Y suitable dopant for ZnO thin films. The Sn-doped ZnO thin films were deposited onto quartz substrates with different atomic percentages of dopant which were Y/Zn = 0, 1, 2, 3, 4, and 5 at.%. These thin films were pre-heated at $150^{\circ}C$ for 10 min and then annealed at $500^{\circ}C$ or 1 h. The structural and optical properties of the Y-doped ZnO thin films were investigated using field-emission scanning electronmicroscopy (FE-SEM), X-ray diffraction (XRD), UV-visible spectroscopy, and photoluminescence (PL).

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1038-1041
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• 2006

We report low operating voltage and long lifetime organic light-emitting diodes (OLEDs) with a vanadium oxide $(V_2O_5)-doped$ N,N'-di(1-naphthyl)- N,N'-diphenylbenzidine $({\alpha}-NPD)$ layer between indium tin oxide and ${\alpha}-NPD$. At a luminance of $1000\;cd/m^2$, $V_2O_5$ doped ${\alpha}-NPD$ device shows a operation voltage of 5.1V, while the device without $V_2O_5$ shows 5.8V. The $V_2O_5$ doped $({\alpha}-NPD)$ device also shows a longer lifetime and smaller operation voltage variation over time. It is suggested that the improved device performance can be attributed to the higher hole-injection efficiency and stability of the $V_2O_5$ doped $({\alpha}-NPD)$ layer.

• Journal of the Korean Ceramic Society
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• v.33 no.10
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• pp.1101-1108
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• 1996

No-doped PZT thin films have been fabricated on Pt/Ti/SiO2/Si substrate using Sol-Gel technique. A fast annealing metho (three times of intermediate and final annealing) was used for the preparation of multi-coated 1800$\AA$ thick Nb-doped PZT thin films. As Nb doping percent was increased leakage current was lowered approximately 2 order but dielectic properties were degraded due to the appearance of pyrochlore phase and domain pinning. Futhermore the increase of the final annealing temperature up to 74$0^{\circ}C$lowered the pyrochlore phase content resulting in enhancing the dielectric properties of the Nb doped films. The 3%-Nb doped PZT thin films with 5% excess Pb showed a capacitance density of 24.04 fF/${\mu}{\textrm}{m}$2 a dielectric loss of 0.13 a switchable polarization of 15.84 $\mu$C/cm2 and a coercive field of 32.7 kV/cm respectively. The leakage current density of the film was as low as 1.47$\times$10-7 A/cm2 at the applied voltage of 1.5 V.

• Transactions on Electrical and Electronic Materials
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• v.8 no.4
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• pp.149-152
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• 2007

[ $(Ba_{0.6}Sr_{0.3}Ca_{0.1})TiO_3$ ](BSCT) thick films doped with 0.1 mol% $MnCO_3\;and\;Yb_2O_3(0.1{\sim}0.7mol%)$ were fabricated by the screen printing method on the alumina substrates. And the structural and electrical properties as a function of $Yb_2O_3$ amount were investigated. The exothermic peak was observed at around $680^{\circ}C$ due to the formation of the poly crystalline perovskite phase. The lattice constants of the BSCT thick film doped with 0.7 mol% is 0.3994 nm. The specimen doped with 0.7 mol% $Yb_2O_3$ showed dense and uniform grains with diameters of about $4.2{\mu}m$. The average thickness of all BSCT thick films was approximately $70{\mu}m$. Relative dielectric constant and dielectric loss of the specimen doped with 0.7 mol% $Yb_2O_3$ were 2823 and 3.4%, respectively. The Curie temperature of the BSCT thick films doped with 0.1 mol% $Yb_2O_3$ was $46^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.25-27
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• 2007

$Eu^{2+}$-doped $Ca_2Si_5N_8$ was grown on Si(100) substrate using metal-organic deposition (MOD) method and post-annealed at $900^{\circ}C$ in various atmosphere. Luminescence properties of these thin films were investigated with variations of $Eu^{2+}$-doped concentrations and annealing atmosphere. Thin film was formed with clean surface and uniform thickness of about 72 nm. From the measurements of luminescence properties of thin films, film must be post-annealed in nitrogen or mixture of nitrogen and hydrogen atmosphere to emit a sufficient light. For $Ca_{1.5}Eu_{0.5}Si_5N_8$ thin film annealed at $900^{\circ}C$ in nitrogen atmosphere, excitation band from 380 to 420 nm was detected with the maximum intensity at 404 nm and two broad emission bands from 530 to 630 nm were observed. These broad excitation and emission bands must be attributed to the nitrogen incorporations into the films. From the results, $Ca_{2-x}Eu_xSi_5N_8$ thin film has probability for next generation thin film lighting applications such as light emitting diode (LED) or electro-luminescence (EL).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.5
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• pp.419-424
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• 2009

ZnO films doped with different contents of indium ($0.1{\sim}10$ at.%) were deposited on Si (111) substrate by Pulsed Laser Deposition (PLD). The structural, electrical and optical properties of the films were investigated using XRD, AFM, Hall and PL measurement. Results showed that un-doped ZnO film had (002) plane as the c-axis orientated growth, whereas indium doped ZnO films exhibited the peak of (002) and the weak (101) plane. In addition, in the indium doped ZnO films, the electron concentration is ten times higher than that of un-doped ZnO film, while the resistivity is ten times lower than that of un-doped ZnO film. The indium doped ZnO films have UV emission about 380 nm and show a red shift with increasing contents of indium. The I-V curve of the fabricated diode show the typical diode characteristics and have the turn on voltage of about 2 V.

• Journal of the Korean Ceramic Society
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• v.40 no.8
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• pp.798-803
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• 2003

In synthesis of nano powders, the hard agglomeration for the synthesized powders occurred during the drying processing. In order to avoid hard agglomeration in particles the freeze drying process was used in this experiment. e fabricated the Yttira-Doped Ceria(YDC) nano powder by co-precipitation. Starting materials used in experiments were the cerium(III) nitrate and yttrium(III) nitrate solution with 야-water, which two solutions were mixed and then the precipitated hydroxides were prepared for adding sodium hydroxide. The co-precipitated powders were dried by the thermal drying at 8$0^{\circ}C$ for 24 h and by freeze drying at -4$0^{\circ}C$, 30 mtorr for 72 h. The lattice parameter and crystallite size as a function of calcination temperature was characterized by XRD analysis. The lattice parameter of YDC was decreased with addition amount of yttrium and was estimated as 5.401683 $\AA$ at $700^{\circ}C$. Crystallite size were calculated by XRD-LB method, and morphologies were confirmed with the observation of TEM and SEM. The freeze dried YDC powders had medium diameter of 17 nm with more uniform size distribution than the thermal dried YDC posers, which were mainly ascribed to the difference of agglomerates formation during drying stage.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1999.06a
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• pp.305-320
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• 1999

It was grown Er2O3 doped LiNbO3 single crystal thin films with high crystal quality by liquid phase epitaxial (LPE) method. Er2O3 was doped with a concentration of 1, 3, and 5 mol% respectively. After the growth of single crystal thin film, we examined the crystallinity and the lattice mismatch along the c-axis between the film and the substrate with the variation of Er2O3 dopant using X-ray double crystal technique. There were no lattice mismatches along the c-axis for the undoped and the films doped with 1 and 3 mol% of Er2O3. For 5 mol% of Er2O3 doped film, there was a lattice mismatch of 7.86x10-4nm along the c-axis.

• Applied Science and Convergence Technology
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• v.26 no.5
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• pp.143-147
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• 2017

Structural studies on the addition characteristics of Nb ions to $BaTiO_3$ solid solutions were performed by XRD and SEM/EDS technique. The X-ray diffraction peaks of the (111), (200) and (002) planes of Nb-doped $BaTiO_3$ solid solutions with different mole% of Nb were analyzed. We also investigated the relationship between the dielectric and structural properties of Nb-doped $BaTiO_3$. The transition temperatures of $BaTiO_3$ solid solution doped with 0.5mole%Nb and 1.0 mole%Nb were ${\sim}116^{\circ}C$ and ${\sim}87^{\circ}C$, respectively, which were found to be shifted to very low temperature from the transition temperature of pure $BaTiO_3$ (about $125^{\circ}C$). As a result of analysis of 1/K versus T and ln[$(1/K)-(1/K_m)$ versus ($T-T_m$)] of the two compositions used in this experiment, the diffusivity slightly differs from that of pure $BaTiO_3$ at temperatures above Curie temperature. And this characteristic was analyzed by applying the modified Curie-Weiss law.

• Journal of the Semiconductor & Display Technology
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• v.6 no.3
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• pp.35-39
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• 2007

ITO(Indium Tin Oxide) is the most attractive TCO(Transparent Conducting Oxide) materials for LCD, PDP, OLEDs and solar cell, because of their high optical transparency and electrical conductivity. However due to the shortage of indium resource, hard processing at low temperature, and decrease of optical property during hydrogen plasma treatment, their applications to the display industries are limited. Thus, recently the Al-doped ZnO(AZO) has been studied to substitute ITO. In this study, we have investigated the effect of different substrate temperature(RT, $150^{\circ}C$, $225^{\circ}C$, $300^{\circ}C$) and working pressure(10 mTorr, 20 mTorr, 30 mTorr, 80 mTorr) on the characteristics of AZO(2 wt.% Al, 98 wt.% ZnO) films deposited by RF-magnetron sputtering. We have obtained AZO thin films deposited at low temperature and all the deposited AZO thin films are grown as colunmar. The average transmittance in the visible wavelength region is over 80% for all the films and transmittance improved with increasing substrate temperature. Electrical properties of the AZO films improved with increasing substrate temperature.