• Publications of The Korean Astronomical Society
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• v.32 no.1
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• pp.213-217
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• 2017

The recent updates of the North Ecliptic Pole deep ($0.5deg^2$, NEP-Deep) multi-wavelength survey covering from X-ray to radio-wave is presented. The NEP-Deep provides us with several thousands of $15{\mu}m$ or $18{\mu}m$ selected galaxies, which is the largest sample ever made at these wavelengths. A continuous filter coverage in the mid-infrared wavelength (7, 9, 11, 15, 18, and 24 µm) is unique and vital to diagnose the contributions from starbursts and AGNs in the galaxies out to z=2. The new goal of the project is to resolve the nature of the cosmic star formation history at the violent epoch (e.g. z=1-2), and to find a clue to understand its decline from z=1 to present universe by utilizing the unique power of the multiwavelength survey. The progress in this context is briefly mentioned.

• The Plant Pathology Journal
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• v.27 no.4
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• pp.378-384
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• 2011

Tomato yellow leaf curl virus (TYLCV), a member of genus Begomovirus, was isolated in Korea in 2008. We sequenced and analyzed the DNA-A of 51 TYLCV isolates from Korea, and 13 of the TYLCV isolates were selected as type representatives of TYLCV from six Korean provinces. The 13 TYLCV isolates were classified into Korea Group 1 (KG1, nine isolates) and Korea Group 2 (KG2, four isolates) based on the results of phylogenetic analysis and genome size (2774 and 2781 nucleotides, respectively). A recombination detection program 3 (RDP3) revealed two recombinations between the TYLCV Korea isolates and other TYLCV isolates [Thailand (AF206674), Iran (AJ132711), and Israel (X76319)]. TYLCV Jeju isolate was characterized by two recombination events (E1 and E2) caused by the presence of E1 in ORF V1 and C3, which may seem to be the mutations of the high nucleotide transversion and transition rate. Collectively, our results suggest that the occurrence of nucleotide transversions and transitions in TYLCV DNA-A might have induced novel recombination events within the TYLCV Korea isolates.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.380-380
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• 2013

본 논문에서는 외기 환경 요인 중에서 H2O와 O2의 영향으로 성능이 저하되는 유기박막트랜지스터(OTFT)의 수명시간 향상을 위하여 필요한 passivation layer의 효과에 대하여 알아 보았다. OTFT에 기존의 액상 공정이나 증착 공정으로 단일 passivation layer또는 다층 passivation layer를 형성하는 방식과는 다르게 향후에 산업 전반에 적용이 기대되는 것을 고려하여 제작 공정의 간편성을 위하여 film 형태로 되어 있는 열경화성 epoxy resin film으로 passivation layer를 구현하는 방법을 사용하여 OTFT의 storage stability를 평가하였다. passivation layer가 없는 OTFT와 열경화성 epoxy resin film으로 passivation된 OTFT의 전기적 특성이 서로 비교 평가되었으며 또한 30일 동안 온도 $25^{\circ}C$ 상대습도 40%의 환경을 갖는 Desicator 안에서 소자를 보관하여 시간에 따른 전기적 특성 변화를 검증하여 epoxy resin film의 passivation layer으로의 적용가능성을 검증하였다. 결과적으로 30일 후의 passivation layer가 없는 OTFT의 전기적 특성은 매우 낮게 떨어진 반면에 epoxy resin film으로 passivation layer가 구현된 OTFT의 mobility는 $0.060cm^2$/Vs, VT는 -0.18 V, on/off ratio는 $3.7{\times}10^3$으로 초기의 소자 특성이 잘 유지되는 결과를 얻었다. OTFT는 Flexible한 polyethersulfone (PES)기판에 게이트 전극이 하부에 있는 Bottom gate 구조로 제작되었고 채널 형성을 위한 유기반도체 재료로 6,13-bis (triisopropylsilylethynyl) (TIPS) pentacene이 사용되었고 spin coating된 Poly-4-vinylphenol (PVP)가 게이트 절연체로 사용되었다. 이때 Au전극은 Shadow mask를 이용하여 증착하였다. 또한 OTFT의 채널 길이 $100{\mu}m$, 채널 폭 $300{\mu}m$의 영역에 Drop casting법을 사용하여 채널을 형성하였다. 물리적 특성은 scanning electron microscopy (SEM), scanning probe microscopy (SPM), x-ray diffraction (XRD)를 사용하여 분석하였고, 전기적 특성은 Keithley-4200을 사용하여 추출하였다.

• Journal of Physiology & Pathology in Korean Medicine
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• v.25 no.2
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• pp.217-226
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• 2011

The aim of this study is to identify central neural pathway of neurons following the projection to the large intestine and Hapgok(LI4) which is Won acupoint of the large intestine meridian of hand-yangmyeong. In this experiment, Bartha's strain of pseudorabies virus was used to trace central localization of neurons related with large intestine and acupoint(LI4) which has been known to be able to regulate intestinal function. The animals were divided into 3 groups: group 1, injected into the large intestine; group 2, injected into the acupoint(LI4); group 3, injected into the acupoint(LI4) after severing the radial, ulnar, median nerve. After four days survival of rats, PRV labeled neurons were identified in the spinal cord and brain by immunohistochemical method. First-order PRV labeled neurons following the projection to large intestine, acupoint(LI4) and acupoint(LI4) after cutting nerve were found in the cervical, thoracic, lumbar and sacral spinal cord. Commonly labeled neurons were labeled in the lumbosacral spinal cord and thoracic spinal cord. They were found in lamina V- X, intermediomedial nucleus and dorsal column area. The area of sensory neurons projecting was L5-S2 spinal ganglia and T12-L1 spinal ganglia, respectively. In the brainstem, the neurons were labeled most evidently and consistently in the nucleus tractus solitarius, area postrema, dorsal motor nucleus of vagus nerve, reticular nucleus, raphe nuclei(obscurus, magnus and pallidus), C3 adrenalin cells, parapyramidal area(lateral paragigantocellular nucleus), locus coeruleus, subcoeruleus nucleus, A5 cell group, periaqueductal gray matter. In the diencephalon, PRV labeled neurons were marked mostly in the arcuate nucleus and median eminence. These results suggest that overlapped CNS locations are related with autonomic nuclei which regulate the functions of large intestine-related organs and it was revealed by tracing PRV labeled neurons projecting large intestine and related acupoint(LI4).

• Geomechanics and Engineering
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• v.28 no.2
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• pp.197-207
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• 2022

The seismic holding behaviors of plate anchor embedded into submerged coarse-grained soils were investigated considering different anchor inclinations. The limit equilibrium method and the Pseudo-Dynamic Approach (PDA) were employed to calculate the inertia force of the soils within the failure rupture. In addition, assuming the permeability of coarse-grained soils was sufficiently large, the coefficient of hydrodynamic force applied on the inclined plate anchor is obtained through adopting the exact potential flow theory. Therefore, the seismic holding resistance was calculated as the combination of the inertia force and the hydrodynamic force within the failure rupture. The failure rupture can be developed due to the uplift loads, which was assumed to be an arc of a circle perpendicular to the anchor and inclines at (π/4 - φ/2). Then, the derived analytical solutions were evaluated by comparing the static breakout factor N_γ to the published experimental and analytical results. The influences of soil and wave properties on the plate anchor holding behavior are reported. Finally, the dynamic anchor holding coefficients N_γd, were reported to illustrate the anchor holding behaviors. Results show that the soil accelerations in x and z directions were both nonlinear. The amplifications of soil accelerations were more severe at lower normalized frequencies (ωH/V) compared to higher normalized frequencies. The coefficient of hydrodynamic force, C, of the plate anchor was found to be almost constant with anchor inclinations. Finally, the seismic anchor holding coefficient oscillated with the oscillation of the inertia force on the plate anchor.

• Bulletin of the Korean Chemical Society
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• v.24 no.11
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• pp.1659-1663
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• 2003

$Al_2O_3$ thin films were grown on H-terminated Si(001) substrates using dimethylaluminum isopropoxide [DMAl: $(CH_3)_2AlOCH(CH_3)_2$], as a new Al precursor, and water by atomic layer deposition (ALD). The selflimiting ALD process by alternate surface reactions of DMAI and $H_2O$ was confirmed from measured thicknesses of the aluminum oxide films as functions of the DMAI pulse time and the number of DMAI-$H_2O$ cycles. Under optimal reaction conditions, a growth rate of ~1.06 ${\AA}$ per ALD cycle was achieved at the substrate temperature of $150\;^{\circ}C$. From a mass spectrometric study of the DMAI-$D_2O$ ALD process, it was determined that the overall binary reaction for the deposition of $Al_2O_3\;[2\;(CH_3)_2AlOCH(CH_3)_2\;+\;3\;H_2O\;{\rightarrow}\;Al_2O_3\;+\;4\;CH_4\;+\;2\;HOCH(CH_3)_2]$can be separated into the following two half-reactions: where the asterisks designate the surface species. Growth of stoichiometric $Al_2O_3$ thin films with carbon incorporation less than 1.5 atomic % was confirmed by depth profiling Auger electron spectroscopy. Atomic force microscopy images show atomically flat and uniform surfaces. X-ray photoelectron spectroscopy and cross-sectional high resolution transmission electron microscopy of an $Al_2O_3$ film indicate that there is no distinguishable interfacial Si oxide layer except that a very thin layer of aluminum silicate may have been formed between the $Al_2O_3$ film and the Si substrate. C-V measurements of an $Al_2O_3$ film showed capacitance values comparable to previously reported values.

• Proceedings of the Korea Crystallographic Association Conference
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• 2002.11a
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• pp.45-47
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• 2002

반도체 소자의 고집적화 및 고속화가 요구됨에 따라 MOSFET 구조의 게이트 절연막으로 사용되고 있는 SiO₂ 박막의 두께를 감소시키려는 노력이 이루어지고 있다. 0.1㎛ 이하의 소자를 위해서는 15Å 이하의 두께를 갖는 SiO₂가 요구된다. 하지만 두께감소는 절연체의 두께와 지수적인 관계가 있는 누설전류를 증가시킨다[1-3]. 따라서 같은 게이트 개패시턴스를 유지하면서 누설전류를 감소시키기 위해서는 높은 유전상수를 갖는 두꺼운 박막이 요구되는 것이다. 그러므로 약 25정도의 높은 유전상수를 갖고 5.2～7.8 eV 정도의 비교적 높은 bandgap을 갖으며, 실리콘과 열역학적으로 안정한 물질로 알려진 HfO2[4-5]가 최근 큰 관심을 끌고 있다. 본 연구에서는 HfO₂ 박막을 실제 소자에 적용하기 위하여 전극 및 열처리에 따른 HfO₂ 박막의 미세구조 및 전기적 특성에 관한 연구를 수행하였다. 이를 위해, HfO₂ 박막을 reactive DC magnetron sputtering 방법으로 증착하고, XRD, TEM, XPS를 사용하여 ZrO₂ 박막의 미세구조를 관찰하였으며, MOS 캐패시터 구조의 C-V 및 I-V 특성을 측정하여 HfO₂ 박막의 전기적 특성을 관찰하였다. HfO₂ 타겟을 스퍼터링하면 Ar 스퍼터링에 의해 에너지를 가진 산소가 기판에 스퍼터링되어 Si 기판과 반응하기 때문에 HfO₂ 박막 형성과 더불어 Si 기판이 산화된다[6]. 그래서 HfO₂같은 금속 산화물 타겟 대신에 순수 금속인 Hf 타겟을 사용하고 반응성 기체로 O₂를 유입시켜 타겟이나 시편위에서 high-k 산화물을 만들면 SiO/sub X/ 계면층을 제어할 수 있다. 이때 저유전율을 갖는 계면층은 증착과 열처리 과정에서 형성되고 특히 500℃ 이상에서 high-k/Si를 열처리하면 계면 SiO₂층은 증가하는 데, 이것은 산소가 HfO₂의 high-k 박막층을 뚫고 확산하여 Si 기판을 급속히 산화시키기 때문이다. 본 방법은 증착에 앞서 Si 표면을 희석된 HF를 이용해 자연 산화막과 오염원을 제거한 후 Hf 금속층과 HfO₂ 박막을 직류 스퍼터링으로 증착하였다. 우선 Hf 긍속층이 Ar 가스 만의 분위기에서 증착되고 난 후 공기중에 노출되지 않고 연속으로 Ar/O₂ 가스 혼합 분위기에서 반응 스퍼터링 방법으로 HfO₂를 형성하였다. 일반적으로 Si 기판의 표면 위에 자연적으로 생기는 비정질 자연 산화막의 두께는 10～15Å이다. 그러나 Hf을 증착한 후 단면 TEM으로 HfO₂/Si 계면을 관찰하면 자연 산화막이 Hf 환원으로 제거되기 때문에 비정질 SiO₂ 층은 관찰되지 않았다. 본 실험에서는 HfO2의 두께를 고정하고 Hf층의 두께를 변수로 한 게이트 stack의 물리적 특성을 살펴보았다. 선증착되는 Hf 금속층을 0, 10, 25Å의 두께 (TEM 기준으로 한 실제 물리적 두께) 로 증착시키고 미세구조를 관찰하였다. Fig. 1(a)에서 볼 수 있듯이 Hf 금속층의 두께가 0Å일때 13Å의 HfO₂를 반응성 스퍼터링 방법으로 증착하면 HfO₂와 Si 기판 사이에는 25Å의 계면층이 생기며, 이것은 Ar/O₂의 혼합 분위기에서의 스퍼터링으로 인한 Si-rich 산화막 또는 SiO₂ 박막일 것이다. Hf 금속층의 두께를 증가시키면 계면층의 성장은 억제되는데 25Å의 Hf 금속을 증착시키면 HfO₂ 계면층은 10Å미만으로 관찰된다. 그러므로 Hf 금속층이 충분히 얇으면 플라즈마내 산소 라디칼, 이온, 그리고 분자가 HfO₂ 층을 뚫고 Si 기판으로 확산되어 SiO₂의 계면층을 성장시키고 Hf 금속층이 두꺼우면 SiO/sub X/ 계면층을 환원시키면서 Si 기판으로의 산소의 확산은 막기 때문에 계면층의 성장은 억제된다. 따라서 HfO₂/Hf(Variable)/Si 계에서 HfO₂ 박막이 Si 기판위에 직접 증착되면, 순수 HfO₂ 박막의 두께보다 높은 CET값을 보이고 Hf 금속층의 두께를 증가시키면 CET는 급격하게 감소한다. 그러므로 HfO₂/Hf 박막의 유효 유전율은 단순 반응성 스퍼터링에 의해 형성된 HfO₂ 박막의 유전율보다 크다. Fig. 2에서 볼 수 있듯이 Hf 금속층이 너무 얇으면 계면층의 두께가 두꺼워 지고 Hf 금속층이 두꺼우면 HfO₂층의 물리적 두께가 두꺼워지므로 CET나 EOT 곡선은 U자 형태를 그린다. Fig. 3에서 Hf 10초 (THf=25Å) 에서 정전 용량이 최대가 되고 CET가 20Å 이상일 때는 high-k 두께를 제어해야 하지만 20Å 미만의 두께를 유지하려면 계면층의 두께를 제어해야 한다.

• Korean Journal of Food Science and Technology
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• v.37 no.4
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• pp.513-518
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• 2005

Capillary electrophoresis (CE) method was developed to determine (+)-catechin and (-)-epicatechin contents in grape seed ethanol extract. CE separation was achieved using 100 mM phosphate and borate buffer at pH 6.0 as background electrolyte and fused silica capillary with 50 microns x 375 microns O.D. (effective length 20.0cm) maintained at $25^{\circ}C$. The applied voltage was 10kV, and detection was performed by DAD at 210 nm, Two catechins were well separated within 6 min with repeatability of <0.8% RSD for migration time and <2.0% RSD for peak area, and correlation coefficients higher than 0.994 were obtained from 58.0 to 174.0 mg/L with detection limit of 0.035 mg/L. Separated compounds were successfully determined. CE method was easy to handle and showed good reproducibility. CE method was compared with conventional coloring and HPLC methods, and main advantages of CE method were low amount of sample required, simple pre-sample treatment, good recovery rate, and short analysis time.

• Restorative Dentistry and Endodontics
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• v.19 no.1
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• pp.148-158
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• 1994

The purpose of this study was to compare the adaptation to tooth structure of light - cured glass ionomer cement with that of self -cured glass ionomer cement. In this study, class V cavities were prepared on the buccal surfaces of 10 extracted human premolar teeth, and teeth were randomly assigned 2 groups of 5 teeth each. The cavities of self-curing glass ionomer cement group were restored with the Fuji n. and the cavities of lightcuring glass ionomer cement group were restored with the Fuji II LC. The surfaces of glass ionomer cements were applied with All-Bond 2 adhesive, and cured with visible light. The restored teeth were stored in 100% relative humidity at $37^{\circ}C$ for 24 hours. And then. the roots of the teeth were removed with the tapered fissure bur and the remaining crowns were sectioned occlusogingivally through the center of glass ionomer restorations. Adaptation at tooth-restoration interface was assessed occlusally. axially, and gingivally by scanning electron microscope. The results were as follows : 1. On the occlusal margin, the group of self - curing glass ionomer cement showed closer adaptation to both enamel and dentin than the group of light-curing glass ionomer cement showing 5/lm gap between cement and tooth structure. 2. On the axial wall. the group of light-curing glass ionomer cement showing 5-$7{\mu}m$ gap between cement and dentin showed closer adaptation to dentin than the group of self -curing glass ionomer cement showing 10-$15{\mu}m$ gap between cement and dentin. 3. On the gingival margin, the group of light-curing glass ionomer cement showing 2-$5{\mu}m$ gap between cement and dentin(X 1200) showed closer adaptation to dentin than the group of self-curing glass ionomer cement showing 20pm gap between cement and dentin(X 600). 4. The group of self -curing glass ionomer cement showed closer adaptation on the occlusal margin than on the gingival margin, and the group of light-curing glass ionomer cement showed similar adaptation on both occlusal and gingival margins.

• 한국초전도학회:학술대회논문집
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• v.9
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• pp.152-159
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• 1999

YBa$_2Cu_3O_{7-{\delta}}$ (YBCO) films grown on CeO$_2$-buffered r-cut sapphire substrates (CbS's) were prepared and their structural and electrical properties were measured. Post-annealed CeO$_2$ films were used as buffer layers for the experiments. It turned out that the YBCO films grown on post-annealed CbS's had the rms roughness of less than 20 ${\AA}$ and peak-to-peak roughness of about 30 ${\AA}$ when the YBCO film thickness was 3000 ${\AA}$. Meanwhile, YBCO films on in-situ grown CeO$_2$ buffer layers on r-cut sapphire substrates appeared to have the peak-to-peak roughness of more than 450 ${\AA}$. X-ray diffraction data revealed that the YBCO flms were epitaxially grown along the c-axis with the typical FWHM of(005) ${\theta}$ -2 ${\theta}$ peak about 0. 16 $^{\circ}$ and ${\Delta}$ ${\omega}$ of the (005) peak about 0.5 $^{\circ}$. T$_c$ > 87 K, ${\Delta}$T < 1 K and R(look)/R(100K) ${\ge}$3 were observed from the YBCO films. Applicability of the YBCO films for high-frequency applications was described.