• Title/Summary/Keyword: C-V method

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Growth of 6H-SiC Single Crystals by Sublimation Method (승화법에 의한 6H-SiC 단결정 성장)

  • 신동욱;김형준
    • Korean Journal of Crystallography
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    • v.1 no.1
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    • pp.19-28
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    • 1990
  • 6H-SiC is a promising material (Eg=3.0eV) for blue light-emitting doide and high-temperature semiconducting device. In the experiment, single crystals of a-SiC have been grown by the sublimation method to fabricate blue light~emitting diode. During the growth of a-SiC single crystals, a temperature Vadient, yonh temperature and pressure ranges were kept 44℃/cm , 1800-1990℃ and 50-1000 mTorr, respectively. Single crystals obtained in Acheson furnace were used as seed crystals. Polarizing microscopy and back-reflection X-ray Laue diffraction showed that the a-SiC crystal was epitaxially and on the seed crytal. It was found by XRD analysis that when other growth conditions were the same, a-SiC was grown at the temperature above 1840℃ and 3C-SiC was gown at lower temperature or under low supersaturation of vapor. The carrier type. concentration and mobility were measured be hole(p-type), 7.6x1014cm-3 and 19cm2V-1sec-1, respectively, by van der Pauw method.

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A study on the correlation between V charpy absorbed energy and critical COD value in the welded parts of high tensil strength steel under various welding methods (고장력강 용접부에 있어서 한계 COD값과 V charpy충격치와의 상관성에 관한 연구)

  • 김영식;김충해
    • Journal of Advanced Marine Engineering and Technology
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    • v.12 no.3
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    • pp.57-67
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    • 1988
  • Although handicapped by the inability to bridge the size gap between small laboratory sample and large engineering component, the V charpy test sample method does possess certain advantages, such as each of preparation, simplicity of test method, speed, low cost in test machinery, and low cost per test. On the other hand, the COD test method does posses advantages, which reduce the size gap between the laboratory sample and actual engineering component. Consequently, the correlation between V charpy absorbed energy and the critical COD value is required for estimating critical COD value from the simple V charpy test results. In this paper, the high tensile strength steel AH36 plate specimens having a single edge cracked notch were investigated to find out the correlation between V charpy absorbed energy and critical COD value in the welded parts under such various welding methods as shielded metal arc welding, the submerged arc welding and the electro gas welding by means of V charpy impact test and static 3-point bending test. Main results obtained are as follow ; 1. The relationships between V charpy absorbed energy Wc' and critical COD value ($\delta_c$)show; $\delta_c$=0.0065 Wc'+0.1906. 2. Ductile- brittle transition behaviours can be estimated by means of fracture appearance and general yielding behaviours. 3. The V charpy absorbed energy of SMAW is higher than that of SAW, EGW and similar relationships are obtained in the COD tests.

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Molecular Cloning, Bioinformatics Analysis and Expression Profiling of a Gene Encoding Vacuolar-type $H^+-ATP$ Synthetase (V-ATPase) c Subunit from Bombyx mori

  • Lu, Peng;Chen, Keping;Yao, Qin;Yang, Hua-Jun
    • International Journal of Industrial Entomology and Biomaterials
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    • v.15 no.2
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    • pp.115-122
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    • 2007
  • As the genome of B.mori is available in GenBank and the EST database of B.mori is expanding, identification of novel genes of B.mori is conceivable by data-mining techniques. We used the in silico cloning method to get the vacuolar-type $H^+-ATP$ synthetase (V-ATPase) c subunit (16 kDa proteolipid subunit) gene of B.mori and analysed with bioinformatics tools. The result was confirmed by RT-PCR and sequencing. The V-ATPase c subunit cDNA contains a 468 bp ORF. The ORF encoded a 155-residue protein that showed extensive homology with V-ATPase c subunits from other 15 species and contained four membrane-spanning helices. Tissue expression pattern analysis revealed that V-ATPase c expressed strongly in Malpighian tubules, not in fat body. This gene has been registered in GenBank under the accession number EU082222.

Study on the Sublimatographic Characters of Sulfur (황의 Sublimatographic Characters에 관한 연구)

  • Sohn, Jin-Un;Kim, Joo-Bong
    • Elastomers and Composites
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    • v.7 no.1
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    • pp.53-58
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    • 1972
  • Sublimatographic study on the method of test for sulfur in the petroleum and rubber products was as following results: (1) The relation between the heating temperature$(t_h)$ and the vacuum condensing point(V.C.P.) of sulfur at different degree of vacuum appeared as Fig.4. The results were in good agreement with those expected from the $t_h-V.C.P$ curves of sublimatographic separation of sulfur. (2) The relation between the degree of vacuum and the V.C.P. at different heating temperature of sulfur appeared as follows; $$tv.c.p.=\alpha+{\beta}logP_{va}$$ (3) The V.C.P of sulfur could be physical property comparing with melting point and boiling point. (4) The relation between the V.C.P. and the quantity of sublimation of sulfur becomes quantitative as Fig.7.

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The Study of Low Carbon Microalloyed Forging Steels by Direct Quenching Method with Mo Additions (몰리브덴을 첨가한 직접 소입 저탄소 비조질강에 관한 연구)

  • Wee, Kyoum-Bok;Lee, Kyung-Sub
    • Korean Journal of Materials Research
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    • v.2 no.6
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    • pp.452-460
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    • 1992
  • Effects of the microalloyed elements, temperatures and cooling rates on the strength and toughness of the medium carbon microalloyed hot forging steels obtained by air cooling(A.C.) method and the low carbon microalloyed forging steels by direct quenching(D.Q.) method were investigated. Combined additions of V+Nb produced the optimum combination of strength and toughness with ferrite-pearlite structure of the medium carbon steel by the A.C. method. 831MPa in UTS and 52.1J in toughness were obtained for 0.40c+0.12V+0.07Nb. It was martensite structure for the low carbon steel by the D.Q. method. The highest UTS and toughness obtained by Mo additions were 855MPa and 108j by 0.12C+0.10V+0.03Nb+1.13Mo respectively. Especially, the toughness of the low carbon steel was twice better than that of the medium carbon steel. 110$0^{\circ}C$was more appropriate than 120$0^{\circ}C$ for the reheating and forging temperature and 1.$2^{\circ}C$ /s was the best cooling rate from the viewpoint of the strength and toughness. Multiple regression analysis was used to quantify the influence of the microalloyed elements, temperatures and cooling rates on the strength, toughness, austenite grain size, and the pearlite interlamellar spacing.

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Measurement of Interface Trapped Charge Densities $(D_{it})$ in 6H-SiC MOS Capacitors

  • Lee Jang Hee;Na Keeyeol;Kim Kwang-Ho;Lee Hyung Gyoo;Kim Yeong-Seuk
    • Proceedings of the IEEK Conference
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    • summer
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    • pp.343-347
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    • 2004
  • High oxidation temperature of SiC shows a tendency of carbide formation at the interface which results in poor MOSFET transfer characteristics. Thus we developed oxidation processes in order to get low interface charge densities. N-type 6H-SiC MOS capacitors were fabricated by different oxidation processes: dry, wet, and dry­reoxidation. Gate oxidation and Ar anneal temperature was $1150^{\circ}C.$ Ar annealing was performed after gate oxidation for 30 minutes. Dry-reoxidation condition was $950^{\circ}C,$ H2O ambient for 2 hours. Gate oxide thickness of dry, wet and dry-reoxidation samples were 38.0 nm, 38.7 nm, 38.5 nm, respectively. Mo was adopted for gate electrode. To investigate quality of these gate oxide films, high frequency C- V measurement, gate oxide leakage current, and interface trapped charge densities (Dit) were measured. The interface trapped charge densities (Dit) measured by conductance method was about $4\times10^{10}[cm^{-1}eV^{-1}]$ for dry and wet oxidation, the lowest ever reported, and $1\times10^{11}[cm^{-1}eV^{-1}]$ for dry-reoxidation

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Optical properties of $HgGa_2S_4$ single crystal ($HgGa_2S_4$ 단결정의 광학적 특성)

  • Kim, H.G.;Kim, N.O.;Kim, B.C.;Choi, Y.I.;Kim, D.T.;Hyun, S.C.;Bang, T.H.;Lee, K.S.;Gu, H.B.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.05c
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    • pp.47-52
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    • 2004
  • $HgGa_2S_4$ single crystals were grown by the chemical transport reaction method. The $HgGa_2S_4$ single crystal crystallized into a defect chalcopyrite structure $(I\bar{4})$. The lattice constants of the single crystal were found to be a=5.635 ${\AA}$ and c=10.473 ${\AA}$. The direct and indirect optical energy gaps were found to be 2.84 eV and 2.78 eV, respectively. Photoluminescence peaks of $HgGa_2S_4$ single crystal were observed at 2.37 eV, 2.18 eV, and 1.81 eV. In the single crystal, the donor level of 0.25 eV, the acceptor levels of 0.97 eV and 0.41 eV were obtained by TSC, PICTS, and absorption measurements. The photoluminescence peaks were analyzed to relate to the indirect conduction band, the donor level, and the acceptor levels.

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Experimental fabrication of tapped band pass filter of $BiNbO_{4}$ ceramics ($BiNbO_4$ 세라믹스를 이용한 태핑기법의 적층칩 대역 필터에 관한 연구)

  • 고상기;지기만;김경용
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.23 no.4
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    • pp.988-996
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    • 1998
  • BN ceramics with 0.07wt% $V_{2}O_{5}$ and 0.03wt% CuO(BNC3V7) sintered at $900^{\circ}C$ where it is possible for these to be co-fired with Ag electrode. Dielectricconstant of 44.3, TCF of 22 ppm$/^{\circ}C$ and $Qxf_{o}$ value of 22,000 GHz can be obtained from BNC3V7, multilayer type band pass filters using tapped method and conventional method were designed for PCS (Personal Communication System) applications. Tapped method by adopting input/output-tapping scheme the chip filter stucture becomes simpler and needs fewer layers than that using the conventional input/output-coupling scheme. A multilayer type band pass filter fabricated by screen-printing with silver electrode after tape casting. The simulated characteristics of the fabricated filters sintered at $900^{\circ}C$ were compared with the designed ones. Even though the centered frequencies of tapped and conventional band pass chaip filters were measured to shift about 90MHz downward, the band pass characteristics of both filters were similar that of designed ones. The spuriousresonance characteristic of tapped pass chip filter was better than that of conventional chip filer.

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Study on Sensory Papillae of Metagonimus yokogawai Cercaria (Metagonimus yokogawai 세르카리아의 감각유두에 관한 연구)

  • 김재진;민득영소진탁
    • Parasites, Hosts and Diseases
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    • v.22 no.1
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    • pp.11-20
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    • 1984
  • A number of studies on the papillae of cercariae of trematodes reported that the papillar patterns (or chaetotaxy) of cercariae might be an excellent method to attain better understanding of the digenetic trematodes (Richard, 1971 ; Short and Cartrett, 1973; Bayssade-Dufour, 1979) . The present study was aimed to determine the number, distribution pattern and structure of the sensory papillae of Metagonimus yokogawai cercariae, and to elucidate the chaetotaxy of this digenetic trematode. M. yokogawai cercariae were pipetted from a vial in which infected snails (Semisulcospira libertina) had been kept for 3 hours. The snails were collected from an endemic area of M. yokogawai, Boseong river in west-southern part of Korea. Observations of papillae were based on light microscopy of those stained with silver nitrate, and on scanning electron microscopy The results are summarized as follows: 1, All papillae observed were uniciliated. 2. Cilia in anterior tip were shorter than the others in other portions. 3. The body papillae were arranged in essentially symmetrical patterns, Total number of the papillae was 126(63 pairs) in average; anterior tip 40(20 pairs), ventral 20(10 pairs), lateral 42(21 pairs), and caudal 8(4 pairs). 4. The chaetotany of M. yokogawai cercaria was: Ci cycle ($3+3C_{I}V,{\;}2+2C_{I}L,{\;}2+3C_{I}D),{\;}C_{II}{\;}cycle(2C_{II}V,{\;}1C_{II}L,{\;}2C_{II}D),{\;}C_{lll}{\;}cycle{\;}(1+lC_{III}V,{\;}1C_{IlI}L),{\;}C_{IV}{\;}cycle{\;}(1C_{IV}V,{\;}IC_{lV}L){\;}in{\;}cephalic{\;}region:{\;}A_I(1A_{IV}V,{\;}1+2A_{I}L,{\;}1A_{I}D),{\;}A_{II}(1A_{II}V,{\;}1+3A_{II}L,{\;}1A_{II}D),{\;}A_{III}(1A_{III}V,{\;}1+1A_{III}L,{\;}1A_{III}D){\;}and{\;}A_{IV}(1A_{IV}V,{\;}2A_{IV}L)$ in antacetabular region: $1M_{I}V{\;}and{\;}2M_{I}L$ in median: $1+1P_{I}L,{\;}1P_{II}L,{\;}1P_{II}D,{\;}1P_{III}L,{\;}1P_{IV}L{\;}and{\;}1P_{IV}D$ in postacetabular region: 2-2-2-2 in caudal region.

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Test-Bed for the Interoperation of Virtual-Constructive Simulation (소부대 교전훈련 Virtual-Constructive 시뮬레이션 연동개념 연구를 위한 테스트베드)

  • Kwon, Soon-Geol;Choi, Mi-Seon;Kim, Mun-Su;Lee, Tae-Eog
    • Journal of the Korea Society for Simulation
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    • v.19 no.4
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    • pp.219-233
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    • 2010
  • The objective of the interoperation of L-V-C Simulation is to enable practical integration training by taking advantages and compensating disadvantages of simulation models, such as Live, Virtual and Constructive models. As a study on the interoperation of L-V-C simulation, this paper suggests effective interoperation method between Virtual and Constructive simulation models and demonstrates small-size intagrated combat training model through V-C Test-Bed.