• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.784-789
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• 2004

Bulk ZnO varistor based on Matsuoka, which varied $SiO_2$ addition has fabricated by standard ceramic process. The micro-electrode, which fabricated for investigation on degradation property of the Single Grain Boundary of ZnO varistor, has sticked by lithography semiconductor process. The values of AC degradation has measured with 150% operating voltage in varistor threshold with 120 minute in 60Hz. In here we observed V-I and V-C property in every 30minute. The operating voltage of Single Grain Boundary has shown in variable patterns in the characteristic of V-I Property. By increasing the $SiO_2$ contents, operating value has also increased and dominated on degradation proper. In EPMA analysis, we know that added $SiO_2$ was nearly distributed at the Grain Boundary. $SiO_2$ has gradually distributed in Grain Boundary condition during the process of crystal growth. It contributes to degradation depression and decision of operating voltage. We also demonstrated for using practical application and performance on distribution random loop based on V-I Properties in Single-Grain-Boundary.

• Journal of the Korean Ceramic Society
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• v.47 no.5
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• pp.461-466
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• 2010

In this study, $Al_2O_3/TaAlO_4/SiO_2$ (A/TAlO/S) structures with tantalum aluminate charge trap layer were fabricated for Nand flash memory device. We evaluated the memory window and retention characteristic as the thickness of the tunnel oxide was varied among 3 nm, 4 nm, and 5 nm. All tunnel oxide thicknesses were measured by ellipsometer and TEM (Transmission Electron Microscope). The A/TAlO/S multi-layer film consisted of 5 nm tunnel oxide showed the best result of memory window of 1.57 V and retention characteristics. After annealing the 5 nm tunnel oxide A/TAlO/S multi-layer film at $900^{\circ}C$. The memory window decreased to 1.32 V. Moreover, the TEM images confirmed that the thickness of multi-layer structure decreased 14.3% after annealing and the program conditions of A/TAlO/S multi-layer film decreased from 13 V to 11 V for 100 ms. Retention properties of both as-deposited and annealed films stably maintained until to $10^4$ cycles.

• Korean Journal of Materials Research
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• v.29 no.7
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• pp.456-462
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• 2019

ZnO thin-films are grown on a p-Si(111) substrate by RF sputtering. The effects of growth temperature and $O_2$ mixture ratio on the ZnO films are investigated by scanning electron microscopy (SEM), X-ray diffraction (XRD), and room-temperature photoluminescence (PL) measurements. All the grown ZnO thin films show a strong preferred orientation along the c-axis, with an intense ultraviolet emission centered at 377 nm. However, when $O_2$ is mixed with the sputtering gas, the half width at half maximum (FWHM) of the XRD peak increases and the deep-level defect-related emission PL band becomes pronounced. In addition, an n-ZnO/p-Si heterojunction diode is fabricated by photolithographic processes and characterized using its current-voltage (I-V) characteristic curve and photoresponsivity. The fabricated n-ZnO/p-Si heterojunction diode exhibits typical rectifying I-V characteristics, with turn-on voltage of about 1.1 V and ideality factor of 1.7. The ratio of current density at ${\pm}3V$ of the reverse and forward bias voltage is about $5.8{\times}10^3$, which demonstrates the switching performance of the fabricated diode. The photoresponse of the diode under illumination of chopped with 40 Hz white light source shows fast response time and recovery time of 0.5 msec and 0.4 msec, respectively.

• Korean Journal of Materials Research
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• v.3 no.6
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• pp.606-613
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• 1993

This was studied about aging characteristic of AC4A/$SiC_{w}$ 10-30v/o reinforced composite. Aging hardenability was decreased $SiC_{w}$ 30% > 10% > 20%. Aging hardening of T6 treatmented composite was higher absolute value than AC4A I/M material. And this results indicated initial hardening phenomenon according to increase $SiC_{w}$ volume fraction. Reinforced effect by pressure was the same effect as before aging treatment and the best condition pressure at 75MPa. Similar to reinforced effect according to $SiC_{w}$ volume fraction was 30 % > 10 % > 20 %. In case of pressure is low, whisker is not break the same time press with base metal after wetting. After it is wetting with base metal, a part transformed or wetting part break and whisker maintain original shape or a part transformed on the otherhand, in case of pressure is high, whisker is break in same time it was not against pressure and whisker's shape is near a polygon or spherical shape.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.55-55
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• 2009

Silicon Carbide (SiC) is a material with a wide bandgap (3.26eV), a high critical electric field (~2.3MV/cm), a and a high bulk electron mobility (${\sim}900cm^2/Vs$). These electronic properties allow high breakdown voltage, high frequency, and high temperature operation compared to Silicon devices. Although various SiC DMOSFET structures have been reported so far for optimizing performances. the effect of channel dimension on the switching performance of SiC DMOSFETs has not been extensively examined. In this paper, we report the effect of the interface states ($Q_s$) on the transient characteristics of SiC DMOSFETs. The key design parameters for SiC DMOSFETs have been optimized and a physics-based two-dimensional (2-D) mixed device and circuit simulator by Silvaco Inc. has been used to understand the relationship with the switching characteristics. To investigate transient characteristic of the device, mixed-mode simulation has been performed, where the solution of the basic transport equations for the 2-D device structures is directly embedded into the solution procedure for the circuit equations. The result is a low-loss transient characteristic at low $Q_s$. Based on the simulation results, the DMOSFETs exhibit the turn-on time of 10ns at short channel and 9ns at without the interface charges. By reducing $SiO_2/SiC$ interface charge, power losses and switching time also decreases, primarily due to the lowered channel mobilities. As high density interface states can result in increased carrier trapping, or recombination centers or scattering sites. Therefore, the quality of $SiO_2/SiC$ interfaces is important for both static and transient properties of SiC MOSFET devices.

• Journal of Korean Society of Environmental Engineers
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• v.27 no.6
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• pp.590-598
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• 2005

An adequate method to identify chromium separation, Cr(III) and Cr(VI), in water samples were studied by using High Performance Liquid Chromatography(HPLC) coupled with Inductively Coupled Plasma Mass Spectometer(ICP-MS) equipped with Dynamic Reaction Cell(DRC). The characteristic distribution of Cr(III) and Cr(VI) in the raw water taken at the six water intake stations in Seoul, was analyzed by the method developed by the authors. The chromium species separated by HPLC was isocratically conducted by using tetrabutylammonium phosphate monobasic(1.0 mM TBAP), ethylenediaminetetraacetic acid(0.6 mM EDTA) and 2% v/v methanol as the mobile phase. 5% v/v methanol was used as flushing solvent. A reactive ammonia($NH_3$) gas was used to eliminate the potential interference of $ArC^+$. Several Parameters such as solvent ratio, pH, flow rate and sample injection volume were optimized for the successful separation and reproducibility. Although it has been reported thai the separation sensitivity of Cr(III) is superior to that of Cr(VI), the authors observed Cr(VI) was more sensitive than Cr(III) when ammonia($NH_3$) gas was used as the reaction gas. It took less than 3 minutes to analyze chromium species with this method and the estimated detection limits were $0.061\;{\mu}g/L$ for Cr(III) and $0.052\;{\mu}g/L$, for Cr(VI). According to the results from the analysis on chromium species in the raw water of the six intake stations, the concentrations of Cr(III) ranged from 0.048 to $0.064\;{\mu}g/L$(ave. $0.054\;{\mu}g/L$) while that of Cr(VI) ranged from 0.014 to $0.023\;{\mu}g/L$(ave. $0.019\;{\mu}g/L$). Recovery ratio was very high($90.1{\sim}94.1%$). There were two or three times more Cr(III) than Cr(VI) in the raw water.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.131-131
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• 2009

Silicon Carbide (SiC) is a material with a wide bandgap (3.26eV), a high critical electric field (~2.3MV/cm), a and a high bulk electron mobility ($\sim900cm^2/Vs$). These electronic properties allow high breakdown voltage, high-speed switching capability, and high temperature operation compared to Si devices. Although various SiC DMOSFET structures have been reported so far for optimizing performances, the effect of channel dimension on the switching performance of SiC DMOSFETs has not been extensively examined. This paper studies different channel dimensons ($L_{CH}$ : $0.5{\mu}m$, $1\;{\mu}m$, $1.5\;{\mu}m$) and their effect on the the device transient characteristics. The key design parameters for SiC DMOSFETs have been optimized and a physics-based two-dimensional (2-D) mixed device and circuit simulator by Silvaco Inc. has been used to understand the relationship. with the switching characteristics. To investigate transient characteristic of the device, mixed-mode simulation has been performed, where the solution of the basic transport equations for the 2-D device structures is directly embedded into the solution procedure for the circuit equations. We observe an increase in the turn-on and turn-off time with increasing the channel length. The switching time in 4H-SiC DMOSFETs have been found to be seriously affected by the various intrinsic parasitic components, such as gate-source capacitance and channel resistance. The intrinsic parasitic components relate to the delay time required for the carrier transit from source to drain. Therefore, improvement of switching speed in 4H-SiC DMOSFETs is essential to reduce the gate-source capacitance and channel resistance.

• Journal of Digital Contents Society
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• v.16 no.1
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• pp.63-70
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• 2015

In this paper, we estimate the life cycle from acceleration life test about the hard disk of disk array of image storage of PACS. Webuil distribution was selected by the Anderson-Darling goodness-of-fit test with data of down time at $50^{\circ}C$ and $60^{\circ}C$. The equality test of shape parameter and scale parameter was conducted, so that the probability distribution estimated from data of down time at $50^{\circ}C$ and $60^{\circ}C$ was not statistically significant. The shape parameter was 1.0409, The characteristic life was 24603.5 hours at normal user condition($30^{\circ}C$) by the analysis of weibull-arrhenius modeling which included the acceleration factor of temperature, and The activation energy was 0.5011 eV through arrhenius modeling. The failure analysis of the failure samples of acceleration test and the samples of market return was conducted, so that the share percentage of failure mode was detail difference but the rank of share percentage was almost same. This study suggest the test procedure of acceleration test of hard disk drive in PACS using environment, and help the life estimation at manufacture and use.

• Proceedings of the KIEE Conference
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• 2004.07c
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• pp.1688-1690
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• 2004

초고압절연케이블의 온도변화에 따른 절연특성을 연구하였다. 온도변화는 상온, 50, 80[$^{\circ}C$]로 변화시켰으며, 전압은 0.5[kV]씩 스텝인가법에 의해 승압시켰다. 또한 보이드 특성을 위해 내부에 보이드를 삽입하였다.

• Tribology and Lubricants
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• v.29 no.5
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• pp.310-317
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• 2013

To reduce vehicle fuel consumption due to not only driving but also air conditioning, battery-operated non-starting conditioning systems with thermoelectric modules and without mechanical elements like compressors are being manufactured for use by hybrid heavy trucks in the near future. In this study, the voltage and current consumed by a thermoelectric module were measured to determine the required battery power, and the performance of the conditioning system with air temperature, and humidity of the inlet/outlet modules and inside/outside the cabin for a truck, was evaluated using experimental apparatus under actual conditions. The results showed that, the thermoelectric module can be continously operated for about 1.5 h using existing 24 V batteries. The coefficent of performance(COP) of the cooling and heating modes was calculated to be an average 0.8-1.32. As expected, the heating performance was 30% more efficient than the cooling performance, which is general characteristic of thermoelectric modules.