• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.2
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• pp.277-282
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• 2017

Nickel germanide (NiGe) is one of the most promising alloy materials for source/drain (S/D) of Ge MOSFETs. However, NiGe has limited thermal stability up to $450^{\circ}C$ which is a challenge for fabrication of Ge MOSFETs. In this paper, a novel method is proposed to improve the thermal stability of NiGe using Co interlayer. As a result, we found that the thermal stability of NiGe was improved from $450^{\circ}C$ to $570^{\circ}C$ by using the proposed Co interlayer. Furthermore, we found that current-voltage (I-V) characteristic was improved a little by using Co/Ni/TiN structure after post-annealing. Therefore, NiGe formed by the proposed Co interlayer that is, Co/Ni/TiN structure, is a promising technology for S/D contact of Ge MOSFETs.

• Journal of Environmental Health Sciences
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• v.27 no.1
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• pp.36-43
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• 2001

Chitosans were prepared from red crab chitin under various alkali treatment conditions(different alkali concentrations, reaction times and temperatures) and theirphysicochemical properties were investigated. The nitrogen content and deacetylation degree of red crab chitin were 6.15% and 22.17A%, respectively. By the IR spectra, red crab and reference chitin showed the sharp bands at 1650 $cm^{-1}$ / and 1550 $cm^{-1}$ /, which are characteristic of chitin. The nitrogen contents of prepared chitosans ranged from 6.19~7.48%. Thedeacetylation degree was increased from 63~76% and 48~78% with increasing reaction time and temperature, whereas viscosity was decreased. The nitrogen content and yield of red crab chitosan perpared from chitin with 50% NaOH, 1:25(w/v) for 3.0 hr at 120$cm^{-1}$ / were 7.26% and 85.0%, respectively. and viscosity, deacetylation degree and molecular weight, 67.0 mPa.s, 75.0% and 6.5$\times$10$^{5}$ Dalton, respectively. From the IR spectra, the amide absorption bands of red crab and reference chitosan became very weak, similarly. And at solid state $^{13}$ C-NMR spectra, C=O(carbonyl carbon) signals absent, whereas $CH_3$(methyl carbon) was residues. Chemical shift of $^{13}$ C-NMR spectra of red crab and reference chitosans were in good agreement with slight experimental deviation.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2006.05a
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• pp.322-325
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• 2006

The nano/microstructure and mechanical properties of the eutectic regions in thixo and rheo cast A356 alloy parts were investigated using nano/micro-indentation and mechanical scratching, combined with optical microscopy and atomic force microscope (AFM).Most eutectic Si crystals in the A356 alloy showed a modified morphology as fine-fibers, however Si particles of network in eutectic region was formed quickly with aging time increase in thixo-cast. The aging responses of the eutectic regions in both the thixo and rheo cast A356 alloys aged at $150^{\circ}C$ for different times (0, 2, 4, 8, 10, 16, 24, 36, and 72 h) were investigated. Both Vickers hardness ($H_V$) and indentation ($H_{IT}$) test results showed almost the same trend of aging curves, the peak was obtained at the same aging time of 10 h.

• Journal of Sensor Science and Technology
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• v.25 no.5
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• pp.310-319
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• 2016

Three types of gap sensors, a capacitive gap sensor, an eddy current gap sensor, and a Hall effect gap sensor are described and evaluated through experiments for the purpose of precise gap sensing for micrometer scale movement, and a novel type of differential hall effect gap sensor is proposed. Each gap sensor is analyzed in terms of resolution and environment dependency including temperature dependency. Furthermore, a transport system for AMOLED deposition is introduced as a typical application of gap sensors, which are recently receiving considerable attention. Based on the analyses, the proposed differential Hall effect gap sensor is found to be the most suitable gap sensor for precise gap sensing, especially for application to a transport system for AMOLED deposition. The sensor shows resolution of $0.63mV/{\mu}m$ for the overall range of the gap from 0 mm to 2.5 mm, temperature dependency of $3{\mu}m/^{\circ}C$ from $20^{\circ}C$ to $30^{\circ}C$, and a monotonic characteristic for the gap between the sensor and the target.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.320-321
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• 2008

Ferroelectric $SrBi_2Ta_2O_9$(SBT) ceramics were deposite on Pt/Ti/SiO2/Si substrates using a sintered SBT target and then were annealed in the oxygen atmosphere at $750^{\circ}C$, the most excellent characteristics were shown, and the remnant polarization ($2P_r$) value and the coercive electric field ($E_c$) were respectively about 12.40[${\mu}C/cm^2$] and 30[kV/cm]. Moreover, the excellent fatigue characteristic t was little aged even after $10^{10}$ cycles of switchings. The leakage current density and the dielectric constant of the SBT capacitor annealed in the oxygen atmosphere were respectively approximately $2.13\times10^{-9}$ [A/$cm^2$] and 340.

• Proceedings of the KIEE Conference
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• 2004.07c
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• pp.1948-1950
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• 2004

가속기 연구소에서 개발한 고전압 대전류용 Seal-off TVS (Triggered Vacuum Switch)의 특성을 시험 하는 것을 목적으로 하고 있다. 제작한 TVS는 양전극과 음전극이 교대로 고정된 간격으로 각각 3개의 전극으로 배열되어 있으며 전극은 사다리꼴 모양으로 되어있고 트리거 시스템과 개스를 흡수하는 게터가 내부에 설치되어 있다. 제작한 스위치 내부는 약 $10^{-7}$ torr의 진공상태를 유지하고 있으며 세라믹 챔버를 사용하여 Seal-off 상태로 설계, 제작하였다. 스위치 시험장치는 200 ${\mu}F$, 22 kV 6개를 병렬로 연결한 커패시터 뱅크와 $20{\mu}H{\sim}160{\mu}H$의 탭변환 인덕터와 $0.1{\Omega}{\sim}0.5{\Omega}$ 의 저항을 이용하여 시험 장치를 구성하였다. TVS의 시험에서 에너지 최고 전달량은 74 C 이었으며 이때 인가전압은 30 kV, 최대 전류는 100 kA, 펄스폭은 1${\sim}$2 ms이었다. 본 논문은 제작한 스위치의 전기적인 특성 시험한 결과에 대하여 논하고자 한다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.5
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• pp.341-344
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• 2018

In order to achieve a high efficiency for the silicon solar cell, a passivation characteristic that minimizes the electrical loss at a silicon interface is required. In this paper, we evaluated the applicability of the oxide film formed by ozone for the tunnel silicon oxide film. To this end, we fabricated the silicon oxide film by changing the condition of ozone oxidation and compared the characteristics with the oxide film formed by the existing nitric acid solution. The ozone oxidation was formed in the temperature range of $300{\sim}500^{\circ}C$ at an ozone concentration of 17.5 wt%, and the passivation characteristics were compared. Compared to the silicon oxide film formed by nitric acid oxidation, implied open circuit voltage (iVoc) was improved by ~20 mV in the ozone oxidation and the ozone oxidation after the nitric acid pretreatment was improved by ~30 mV.

• Journal of Environmental Science International
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• v.11 no.6
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• pp.577-582
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• 2002

Selective catalytic reduction and selective non-catalytic reduction processes are mainly used to treat nitrogen oxidants generated from fossil-fuel combustion. Especially, the selective non-catalytic reduction process can be operated more economical and designed more simply than the selective catalytic reduction. For this reason, many researchers carried out to increase the removal efficiency of nitrogen oxidants in the condition of low oxygen concentration by using the selective non-catalytic reduction process. However, this study was flue gas contained high oxygen concentration of 20(v/v%) with ammonia as a reducing agent. Moreover, it carried out experiment with many factors that are reaction temperature, retention time, initial NO concentration, NSR(normalized stoichiometric ratio). It was determined optimal operating conditions to improve NO removal efficiency with SNCR process. The De-NOx efficiency was increased with NSR, initial NO concentration and retention time increasement. This study has NO removal efficiency over 80% in the high oxygen concentration as well as low oxygen concentration. The injection of reducing agent may be considered for SNCR process and facility operation in 850$\^{C}$ of optimal condition.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05e
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• pp.89-91
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• 2003

In this paper, using a Langmuir probe Ar gas characteristic of electrodeless fluorescent lamp which used an inductively coupled plasma were investigated. The RF output changed into 5-50W in 13.56MHz. At this time internal plasma voltage of the chamber and probe current were measured while changing in -70V - +70V with a supply voltage by Langmuir probe. If pressure of Ar gas was increased, the electric current tended to decrease. Also, an electric current was increased according to an increase of a RF output.

• Journal of Sensor Science and Technology
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• v.17 no.4
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• pp.250-255
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• 2008

A vanadium pentoxide ($V_2O_5$)-based bolometric infrared (IR) sensor has been designed and fabricated using micro electro mechanical systems (MEMS) technology for glucose detection and its resistive characteristics has been illustrated. The proposed bolometric infrared sensor is composed of the vanadium pentoxide array that shows superior temperature coefficient of resistance (TCR) and standard silicon micromachining compatibility. In order to achieve the best performance, deposited $V_2O_5$ thin film is optimized by adequate rapid thermal annealing (RTA) process. Annealed vanadium oxide thin film has demonstrated a linear characteristic and relatively high TCR value (${-4}%/^{\circ}C$). The resistance of vanadium oxide is changed by IR intensity based on glucose concentration.