• Advances in nano research
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• 제12권1호
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• pp.25-35
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• 2022

Within the framework of the density functional theory combined with the method of non-equilibrium Green's functions (DFT + NEGF), the features of electron transport in fullerene nanojunctions, which are «core-shell» nanoobjects made of a combination of fullerenes of different diameters C₂₀, C₈₀, C₁₈₀, placed between gold electrodes (in a nanogap), are studied. Their transmission spectra, the density of state, current-voltage characteristics and differential conductivity are determined. It was shown that in the energy range of -0.45-0.45 eV in the transmission spectrum of the "Au-C₁₈₀-Au" nanojunction appears a HOMO-LUMO gap with a width of 0.9 eV; when small-sized fullerenes C₂₀, C₈₀ are intercalation into the cavity C₁₈₀ the gap disappears, and a series of resonant structures are observed on their spectra. It has been established that distinct Coulomb steps appear on the current-voltage characteristics of the "Au-C₁₈₀-Au" nanojunction, but on the current-voltage characteristics "Au-C₈₀@C₁₈₀-Au", "Au-(C₂₀@C₈₀)@C₁₈₀-Au" these step structures are blurred due to a decrease in Coulomb energy. An increase in the number of Coulomb features on the dI/dV spectra of core-shell fullerene nanojunctions was revealed in comparison with nanojunctions based on fullerene C₆₀, which makes it possible to create high-speed single-electron devices on their basis. Models of single-electron transistors (SET) based on fullerene nanojunctions "Au-C₁₈₀-Au", "Au-C₈₀@C₁₈₀-Au" and "Au-(C₂₀@C₈₀)@C₁₈₀-Au" are considered. Their charge stability diagrams are analyzed and it is shown that SET based on C₈₀@C₁₈₀-, (C₂₀@C₈₀)@C₁₈₀- nanojunctions is output from the Coulomb blockade mode with the lowest drain-to-source voltage.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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• pp.1025-1028
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• 2005

Microcrystalline Si (${\mu}c-Si$) TFTs were fabricated using a conventional bottom gate amorphous Si (a-Si) process. A unique ${\mu}c-Si$ deposition technique and TFT architecture was proposed to enhance the reliability of the TFTs. This three-mask TFT fabrication process is comparable with existing a-Si TFT procesess. In order to suppress nucleation at the bottom interface of Si, before deposition of the ${\mu}c-Si$ an $N_2$ plasma passivation was conducted. A typical transfer characteristic of the TFTs shows a low off-current with a value of less than 1 pA and a sub threshold slop of 0.7 V/dec. The DC stress was applied to verify the use of ${\mu}c-Si$ TFTs for AMOLED displays. After 10,000 s of application of the stress, the off-current was even lowered and sub-threshold slope variation was less than 5%. For AMOLED displays, OLED pixel simulation was performed. A pixel current of 13 ${\mu}A$ was achieved with $V_{data}$ of 10 V. After the simulation, a linear equation for the pixel current was suggested.

• 대한수학회논문집
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• 제34권1호
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• pp.83-93
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• 2019

Let R be a noncommutative prime ring of characteristic different from 2, U the Utumi quotient ring of R, C the extended centroid of R and f($x_1,{\ldots},x_n$) a noncentral multilinear polynomial over C in n noncommuting variables. Denote by f(R) the set of all the evaluations of f($x_1,{\ldots},x_n$) on R. If d is a nonzero derivation of R and G a nonzero generalized derivation of R such that $$d(G(u)u){\in}Z(R)$$ for all $u{\in}f(R)$, then $f(x_1,{\ldots},x_n)^2$ is central-valued on R and there exists $b{\in}U$ such that G(x) = bx for all $x{\in}R$ with $d(b){\in}C$. As an application of this result, we investigate the commutator $[F(u)u,G(v)v]{\in}Z(R)$ for all $u,v{\in}f(R)$, where F and G are two nonzero generalized derivations of R.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1989년도 추계학술대회 논문집 학회본부
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• pp.151-154
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• 1989

In the measurement of plasma parameters of the plasma C.V.D with probe method, the most important problem is the contamination of the probe surface. In this paper, we observe the surface contamination of probe surface with microscope and determine the critical current and the critical time to sustain the clean surface of probe in the plasma C.V.D.

• 한국진공학회지
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• 제7권s1호
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• pp.134-139
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• 1998

Amorphous fluorocarbon (a-C:F) is of interest for low dielectric interlayer material, but in this work we applied this material to FED field emitter. N-doped a-C:F films were deposited by inductively coupled plasma chemical vapor deposition (ICPCVD). The Raman spectra were measured to study the film structure and inter-band optical absorption coefficients were measured using Perkin-Elmer UV-VIS-IR spectrophotometer and optical band gap was obtained using Tauc's plot. XPS spectrum and AFM image were investigated to study bond structure and surface morphology. Current-electric field(I-E) characteristic of the film was measured for the characterization of electron emission properties. The optimum doping concentration was found to be [N2]/[CF4]=9% in the gas phase. The turn-on field and the emission current density at $[N_2]/[CF_4]$=9% were found to be 7.34V/$\mu\textrm{m}$ and 16 $\mu\textrm{A}/\textrm{cm}^2$ at 12.8V/$\mu\textrm{m}$, respectively.

• 대한수학회보
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• 제59권1호
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• pp.241-263
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• 2022

We consider a nonlinear Schrödinger equation with critical frequency, (P_𝜀) : 𝜀²∆v(x) - V(x)v(x) + |v(x)|^p-1v(x) = 0, x ∈ ℝ^N, and v(x) → 0 as |x| → +∞, for the infinite case as described by Byeon and Wang. Critical means that 0 ≤ V ∈ C(ℝ^N) verifies Ƶ = {V = 0} ≠ ∅. Infinite means that Ƶ = {x₀} and that, grossly speaking, the potential V decays at an exponential rate as x → x₀. For the semiclassical limit, 𝜀 → 0, the infinite case has a characteristic limit problem, (P_inf) : ∆u(x)-P(x)u(x) + |u(x)|^p-1u(x) = 0, x ∈ Ω, with u(x) = 0 as x ∈ Ω, where Ω ⊆ ℝ^N is a smooth bounded strictly star-shaped region related to the potential V. We prove the existence of an infinite number of solutions for both the original and the limit problem via a Ljusternik-Schnirelman scheme for even functionals. Fixed a topological level k we show that v_k,𝜀, a solution of (P_𝜀), subconverges, up to a scaling, to a corresponding solution of (P_inf ), and that v_k,𝜀 exponentially decays out of Ω. Finally, uniform estimates on ∂Ω for scaled solutions of (P_𝜀) are obtained.

• 열처리공학회지
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• 제7권3호
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• pp.184-189
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• 1994

The heat treatment charaterristic of SCM 440 and B 16 steels has been investigated in various condition(A, B and C) to the effect of heat treatment on mechanical properties, and the following results were obtained. 1. We are obtained a good nitriding characteristic in bainitic structure than other heat treatment cycle in our experiment. 2. Fatigue characteristic has shown in order of B)C)A condition as heat treatment cycle. 3. The effective hardening depth and fatigue characteristic has been excellented in B 16 than SCM 440 after the nitriding and Q. T for Band C condition. 4. Nitriding depth has been increased in addition of Cr, V and the nitriding efficiency is increased as easiness of banite formation to wide range of cooling rate by addition of Mo. 5. The depth of compound layer in parallel surface, notched slop plane and notched bottom has been varied to the nitriding depth of 5, 4 and 3 ${\mu}$ in relatively uniform pattern after 10h nitriding treatment for SCM 440 into A condition.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.213-216
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• 2001

Etching behaviors of ferroelectric YMn $O_3$ thin films were studied by an inductively coupled plasma (ICP). Etch characteristic on ferroelectric YMn $O_3$ thin film have been investigated in terms of etch rate, selectivity and etch profile. The maximum etch rate of YMn $O_3$ thin film is 300 $\AA$/min at Ar/C $l_2$ of 2/8, RF power of 800W, dc bias voltage of 200V, chamber pressure of 15mTorr and substrate temperature of 3$0^{\circ}C$. Addition of C $F_4$ gas decrease the etch rate of YMn $O_3$ thin film. From the results of XPS analysis, Y $F_{X}$ compunds were found on the surface of YMn $O_3$ thin film which is etched in Ar/C1/C $F_4$ plasma. The etch profile of YMn $O_3$ film is improved by addition of C $F_4$ gas into the Ar/C $l_2$ plasma. These results suggest that fluoride yttrium acts as a sidewall passivants which reduce the sticking coefficient of chlorine on YMn $O_3$.>.

• Progress in Superconductivity
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• 제6권1호
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• pp.79-83
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• 2004

We fabricated Bi-2223/Ag superconductor tape with 55 filaments and estimated the magnetic field dependence of critical current (I$_{c}$) and index n (n) up to 30 T at 4.2 K. The I$_{c}$ and n were characterized as a function of external magnetic field parallel to the tape surface on increasing and decreasing field, using a 35 T hybrid magnet. The $I_{c}$ was estimated to be 325 A, and n was 32, 22, and 26 in the electric field range of $0.1 ∼1\mu$V/cm, 1∼10 $\mu$V/cm, and 0.1∼10 $\mu$V/cm, respectively, under self-field at 4.2 K. It was observed that $I_{c}$ was dependent on magnitude of magnetic field and it decreased exponentially as the field increased; in a parallel and increasing field, It was 128 A at 30 T which is approximately 40% of critical current in self-field. In addition, the $I_{c}$ was higher on decreasing field than that on increasing one. On the other hand, n did not significantly depend on field strength up to 30 T, nor varied on whether increasing or decreasing field; n value in 0.1∼1 $\mu$V/cm was 23.0$\pm$5.2 and 27.8$\pm$8.0 on increasing and decreasing field, respectively. The n value on decreasing magnetic field was slightly higher than that on increasing field. This hysteretic behavior of n was similar to that of$ I_{c}$, which is related to the trapped flux at the grain boundary.ary.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 제5회 학술대회 논문집 일렉트렛트 및 응용기술연구회
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• pp.86-89
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• 2003

SBT thin film for semiconductor device that is made by RF magnetron sputtering method studied electrical properties under various temperature condition. Dielectric constant who differ annealing condition appears highest in $750[^{\circ}C]$ and it is 213. Also, C-V properties by annealing temperature of SBT thin film for semiconductor device is no change almost to $600[^{\circ}C]$ and shows non-linear butterfly shape more than $650[^{\circ}C]$ Maximum capacitance and difference of smallest capacitance show the biggest difference in $750[^{\circ}C]$ as degree that domain wall motion contributes in ferrelectric polarization value in C-V characteristic curve of ferroelectric that this shows typical ferroelectric properties. Therefore, SBT thin film for semiconductor device that is annealing in $750[^{\circ}C]$ expressed the most superior electrical and ferroelectric properties.