• 제목/요약/키워드: C-Lab

검색결과 2,215건 처리시간 0.055초

Al-Li/SiC 계면의 젖음성에 관한 연구 (A study on the wettability of the Al-Li/SiC interface)

  • 김기배;김도향;이호인
    • 한국주조공학회지
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    • 제12권2호
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    • pp.149-154
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    • 1992

  • The wetting behaviour of SiC/Al-Li composite interface has been investigated by using an infiltration method. The critical pressure for melt infiltration into SiC particulate preform has been determined by measuring the melt infiltration distance changes with the variation of applied pressure. The threshold pressure of pure Al, Al-0.2wt%Li, Al-0.5wt%Li for melt infiltration are 3.94, 3.93, $3.7Kg/cm^2$ respectively, which implies a slight improvement in wettability of SiC/Al composite by addition of Li. The threshold pressure for melt infiltration also changes with the variation of other parameters such SiC particulate size, SiC particulate fraction and melt temperature.

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Growth of GaAs Crystal by an Improved VGF Apparatus

  • Chul-Won Han;Kwang-Bo Shim;Young-Ju Park;Seung-Chul Park;Suk-Ki Min
    • 한국결정성장학회지
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    • 제1권1호
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    • pp.17-25
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    • 1991

  • The construction details of VGF apparatus with a DM(direct monitoring) furnace for the growth of low defect crystal and characteristics of GaAs crystal grown by this apparatus are described. The average dislocation densities and EL2 concentration of as-grown undoped GaAs along the different solidified fractions exhibit $4{\times}10^{2}-7{\times}10^{3}cm^{-2}$ and $6{\times}10^{14}-4{\times}10^{15}cm^{-3}$, which are less than those observed for liquid encapsulated Czochralski(LEC) or high-pressure vertical gradient freeze(VGF) crystals. These remarkable reduction of the dislocation densities and EL2 concentrations were explained by the lower temperature gradient ($dT/dx-10^{\circ}/cm$) and slower rates of post - growth cooling ($20^{\circ}C/hr:1240-1000^{\circ}C,\;30^{\circ}C/hr:1000-700^{\circ}C$). Also, The Hall mobilities, carrier concentrations show uniform distribution throughtout 80% of the ingot length.

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Microcrystalline Silicon Film Growth on a Fluoride Film Coated Glass Substrate

  • Kim, Do-Young;Park, Joong-Hyun;Ahn, Byung-Jae;Yoo, Jin-Su;Yi, Jun-Sin
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2002년도 International Meeting on Information Display
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    • pp.526-529
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    • 2002

  • Various fluoride films on a glass substrate were prepared and characterized in order to determine the best seed layer for a microcrystalline silicon (${\mu}c$-Si) film growth. Among the various group-IIA-fluoride systems, the $CaF_2$films on glass substrates illustrated (220) preferential orientation and a lattice mismatch of less than 0.7% with Si. $CaF_2$ films exhibited a dielectric constant between $4.1{\sim}5.2$ and an interface trap density ($D_{it}$ as low as $1.8{\times}10^{11}\;cm^{-2}eV^1$. Using the $CaF_2$/glass structure, we were able to achieve an improved ${\mu}c$-Si film at a process temperature of 300 $^{\circ}C$. We have achieved the ${\mu}c$-Si films with a crystalline volume fraction of 65%, a grain size of 700 ${\AA}$, and an activation energy of 0.49 eV.

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