• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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• 2002.02a
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• pp.13-16
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• 2002

Ru thin films were deposited on bi-axially textured Ni tape using rf-magnetron sputtering for a conductive buffer layer of high Tc superconductor applications. (002) textured Ni films were fabricated as the deposition temperature was over $600^{\circ}C$. Rocking curves of the films showed similar alignment to those the Ni tapes. The resistivity of the tapes fabricated below $600^{\circ}C$ was around 20$\mu\Omega$-cm which is good for the conductive layer for tape superconductor applications.

• Carbon letters
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• v.2 no.3_4
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• pp.182-191
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• 2001

Quinoline insoluble formed by the heat treatment was hot-pressed near its softening point. The green body was stabilized in the temperature range of $300{\sim}400^{\circ}C$ and subsequently carbonized below $1300^{\circ}C$ in an argon atmosphere. The behaviors of QI formation was examined with varying the heat treatment temperature and the lapse of time of the sample carbonized at various temperatures. And the mechanical property, corrosion resistance, and friction behavior were also measured optimum content of mesophase pitch ensured a dense structure and high $LC_{(002)}$ value, which resulted in high mechanical properties, good corrosion resistance, and low-stable friction behavior.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.11a
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• pp.187-190
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• 1998

In this paper a probe for the' measurement of dielectric properties of dielectric sheet materials is designed and implemented as a coaxial air line type. Using the broadband impedance method with this measurement probe the dielectric constant and loss tangent of the glass-epoxy and teflon are determined in the frequency range of 0.1 - l.O[GHz] with the temperature variation from $25[^{\circ}C]$ up to $65[^{\circ}C]$. A measured relative dielectric constant of the glass-epoxy is 4.42 and a loss tangents is 0.019 relatively, and the relative dielectric constants of teflon is 2.17 and a loss tangents is 0.002 relatively

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.165-165
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• 2010

AZO:H films were prepared by RF magnetron sputtering system with a AZO (2wt% $Al_2O_3$) ceramic target at a temperature of $150^{\circ}C$. The annealing treatments were carried out in hydrogen ambient for 1hr at a temperature of $400^{\circ}C$. The AZO:H films were etched with 1 % HCl. The influence of the properties of AZO:H films deposited in various working pressures is investigated. As a result, the AZO:H film deposited in 4mTorr showed excellent electrical property of $\rho=5.036{\times}10^{-4}{\Omega}cm$ and strongly oriented (002) peak. The transmittance in the wavelength of 450nm was above 80%. It can be used as front electrode for increasing efficiency of GaN LED.

• Proceedings of the KIEE Conference
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• 1999.11d
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• pp.888-890
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• 1999

ZnO thin films on (001) sapphire substrates have been deposited by pulsed laser deposition using a Nd:YAG laser with the wavelength of 355 nm at an oxygen pressure of 350 mTorr. In order to investigate the effect of the substrate temperature on the properties of ZnO thin films, the experiment has been performed at various substrate temperatures in the range of $200^{\circ}C$ to $700^{\circ}C$. According to XRD, (002) textured ZnO films of high crystalline quality have been obtained by pulsed laser deposition technique. However, the intensity of UV emission is mostly depending on the stoichiometry of ZnO films.

• Journal of the Korean Society for Heat Treatment
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• v.24 no.4
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• pp.199-202
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• 2011

Ga doped ZnO thin films were deposited with RF magnetron sputtering on glass substrate without intentional substrate heating and then the effect of post deposition annealing temperature on the structural, optical and electrical properties of the films was investigated. The post deposition annealing process was conducted for 30 minutes in a vacuum of $1{\times}10^{-3}$ Torr and the vacuum annealing temperatures were 150 and $300^{\circ}C$, respectively. As increase annealing temperature, GZO films show the increment of the prefer orientation of ZnO (002) diffraction peak in the XRD pattern and the optical transmittance in a visible wave region was also increased, while the electrical sheet resistance was decreased. The figure of merit obtained in this study means that GZO films which vacuum annealed at $300^{\circ}C$ have the highest optoelectrical performance in this study.

• Carbon letters
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• v.5 no.2
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• pp.51-54
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• 2004

Isotropic pitch-based carbon fiber was isothermally activated in $CO_2$ atmosphere. Structural parameters of the isotropic carbon fibers and activated carbon fibers (ACFs) were evaluated by X-ray diffraction (XRD). The $d_{002}$ and La of the carbon fibers were measured to be 4.04 ${\AA}$ and 23.6 ${\AA}$ and those of ACFs were 4.29 ${\AA}$ and 22.7 ${\AA}$, respectively, representing less ordered through activation process. The pores in the ACFs were characterized by BET, and they showed super-high specific surface area of maximum value 3,495 $m^2/g$ from average pore size of 8.3 ${\AA}$ at 59% burn-off. It was recognized that 8-9 ${\AA}$ was optimum range of pore size for efficient creation of high specific surface area. The average size of the pores formed at higher temperature ($1100^{\circ}C$) was larger than that of the pores formed at lower temperature ($900^{\circ}C$).

• Electrical & Electronic Materials
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• v.10 no.2
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• pp.166-171
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• 1997

The photomachinable glass-ceramics of Ag and CeO$_{2}$ added to Li$_{2}$O-Al$_{2}$O$_{3}$-SiO$_{2}$-K$_{2}$O glass system was investigated as a function of UV irradiation time. The temperature of optimum nucleation and crystal growth temperature were confirmed at 525.deg. C, 630.deg. C respectively using DTA and TMA. The phases of Li$_{2}$O.SiO$_{2}$ habit were lath-like and/or dendrite type and [002] direction of Li$_{2}$O.SiO$_{2}$ / Li$_{2}$O.2SiO$_{2}$ phases were changed according to the UV irradiation time by 400 W, 362 nm UV light source. Under that condition, the optimum UV irradiation time was 5 min.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1404-1405
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• 2006

Transparent ZnO thin films were deposited on quartz substrates by a KrF pulsed laser deposition (PLD) technique with different process conditions such as substrate temperature ($T_s$) and oxygen ambient pressure ($pO_2$). Surface morphology, crystal structure, and electrical properties of the ZnO films were investigated in order to characterize their thin film properties. The pulsed laser deposited ZnO films showed highly c-oriented crystalline structures depending on the process conditions: the highest FWHM (Full Width Half Maximum) value of (002) peak was observed for the ZnO film prepared at $T_{s}=550^{\circ}C$, $pO_2$=5mTorr and laser fluence of $2J/cm^2$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.667-670
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• 2004

The dielectric properties of PZT(4060)/(6040) multilayered thin films with substrate temperature were investigated. PZT(4060)/(6040) thin films were deposited by RF sputtering method on Pt/Ti/$SiO_2$/Si substrates with different substrate temperature of $200{\sim}700^{\circ}C$. Increasing the substrate temperature, perovskite structure was increased, and PZT (001), (110), (002), (200) peaks were increased. The relative dielectric constant and dielectric loss of PZT(4060)/(6040) multilayered thin films at the substrate temperature of $700^{\circ}C$ were 843 and 2.45, respectively at 1000(Hz).