• Korean Journal of Crystallography
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• v.8 no.2
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• pp.81-88
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• 1997

We investigated the CVPE grown of GaN thin films on (0001) sapphire using the $GaCl_3$ and $NH_3$ as source gases. The growth temperatures are ranged 970 to $1040^{\circ}C$ with the various flow rate ratio of source gases. The nitridation treatment was performed using the $NH_3$ gas before the GaN deposition. The optimal growth conditions were determined to be; growth temperature of $1040^{\circ}C$, III/V flow rate ratio of 2, nitridation time of 3 min. The FWHM at the (0002) peak from the XRD analysis was shown to be 0.32 deg. for the sample grown under those conditions. The growth rate was about $40{\mu}m/hr$ at $1040^{\circ}C$.

• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.10 no.3
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• pp.343-347
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• 1998

The objective of this study is to manufacture the low temperature waterless container that is compact and low cost for a live fish transportation. Using the low temperature water container, it makes observations on the optimal conditions such as the amount of dissolved oxygen, total ammonia and nitrite in seawater for determining the survival rate of live fish in short and long-term transportation. Using a sole as a live fish, the temperatures of $0^{\circ}C$, 3$^{\circ}C$, 5$^{\circ}C$, 7$^{\circ}C$, 15$^{\circ}C$ were controled for there effects. The results of this investigation show that as the seawater temperature increased, the amount of oxygen decreased and there was a low temperature shock below 3$^{\circ}C$. It was observed that the fish was died with 30$m\ell/\ell$of ammonia. The optimal temperature is about 5$^{\circ}C$ for live fish transportation to maintain best survival rate.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.735-738
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• 2000

This paper shows experimentally that oxide layer on the p-type Si-substrate can grow at low temperature(500$^{\circ}C$∼600$^{\circ}C$) using high pressure water vapor system. As the result of experiment, oxide layer growth rate is about 0.19${\AA}$/min at 500$^{\circ}C$, 0.43${\AA}$/min at 550$^{\circ}C$, 1.2${\AA}$/min at 600$^{\circ}C$ respectively. So, we know oxide layer growth follows reaction-controlled mechanism in given temperature range. Consequently, granting that oxide layer growth rate increases linearly to temperature over 600$^{\circ}C$, we can expect oxide growth rate is 5.2${\AA}$/min at 1000$^{\circ}C$. High pressure oxidation of silicon is particularly attractive for the thick oxidation of power MOSFET, because thermal oxide layers can grow at relatively low temperature in run times comparable to typical high-temperature, 1 atm conditions. For higher-temperature, high-pressure oxidation, the oxidation time is reduced significantly

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.213-216
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• 2001

Etching behaviors of ferroelectric YMn $O_3$ thin films were studied by an inductively coupled plasma (ICP). Etch characteristic on ferroelectric YMn $O_3$ thin film have been investigated in terms of etch rate, selectivity and etch profile. The maximum etch rate of YMn $O_3$ thin film is 300 $\AA$/min at Ar/C $l_2$ of 2/8, RF power of 800W, dc bias voltage of 200V, chamber pressure of 15mTorr and substrate temperature of 3$0^{\circ}C$. Addition of C $F_4$ gas decrease the etch rate of YMn $O_3$ thin film. From the results of XPS analysis, Y $F_{X}$ compunds were found on the surface of YMn $O_3$ thin film which is etched in Ar/C1/C $F_4$ plasma. The etch profile of YMn $O_3$ film is improved by addition of C $F_4$ gas into the Ar/C $l_2$ plasma. These results suggest that fluoride yttrium acts as a sidewall passivants which reduce the sticking coefficient of chlorine on YMn $O_3$.>.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09a
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• pp.563-564
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• 2006

The effect of different cooling rate on the structure and mechanical properties of Fe-3%Mn-(Cr)-(Mo)-0.3%C steels is described. Pre-alloyed Astaloy CrM and CrL, ferromanganese and graphite were used as the starting powders. Following pressing in a rigid die, compacts were sintered at $1120^{\circ}C$ and $1250^{\circ}C$ in $H_2/N_2$ atmospheres and cooled with cooling rates $1.4^{\circ}C/min$ and $6.5^{\circ}C/min$. Convective cooled specimens were subsequently tempered at $200^{\circ}C$ for 60 and 240 minutes.

• Korean Journal of Animal Reproduction
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• v.16 no.2
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• pp.157-164
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• 1992

This stduy was carried out to obtain basic information available on ovulation, spawning, fertilization rate, hatching rate, and deformity rate after hCG injection in cyprinid loach, Misgurnus mizolepis. The results obtained in these experiments were as follows: 1. Ovulation and spawning occurred simultaneously and spawing was completed within 1 hour after ovulation. 2. More than 80% of fertilization rates appeared within 12 hours at 21$^{\circ}C$, 8 hours at $25^{\circ}C$, and 4 hours at 29$^{\circ}C$, respectively, following the onset of spawing. Afterwards, the fertilization rates of released eggs sharply decreased in three different water temperatures. 3. More than 70% of hatching rates appeared within 8 hours at 21$^{\circ}C$, 6 hours at $25^{\circ}C$, and 2 hours at 29$^{\circ}C$, respectively, following the onset of spawing. Afterwards, hatching rates of spawned eggs abruptly decreased in three different water temperatures. 4. The deformity rates of hatched larvae were high at $25^{\circ}C$, 8 hours following the onset of spawing. 5. Based on the developmental ability of oocytes, the optimum time of fertilization was 4 hours (stage 5) following the onset of spawing.

• Korean Journal of Soil Science and Fertilizer
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• v.49 no.6
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• pp.712-719
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• 2016

Understanding N mineralization dynamics in soil is essential for efficient nutrient management. An anaerobic incubation experiment was conducted to examine N mineralization potential and N mineralization rate of the organic amendments with different C:N ratio in paddy soil. Inorganic N in the soil sample was measured periodically under three temperature conditions ($20^{\circ}C$, $25^{\circ}C$, $30^{\circ}C$) for 90 days. N mineralization was accelerated as the temperature rises by approximately $10%^{\circ}C^{-1}$ in average. Negative correlation ($R^2=0.707$) was observed between soil inorganic N and C:N ratio, while total organic carbon extract ($R^2=0.947$) and microbial biomass C ($R^2=0.824$) in the soil were positively related to C:N ratio. Single exponential model was applied for quantitative evaluation of N mineralization process. Model parameter for N mineralization rate, k, increased in proportion to temperature. N mineralization potential, $N_p$, was very different depending on C:N ratio of organic input. $N_p$ value decreased as C:N ratio increased, ranged from $74.3mg\;kg^{-1}$ in a low C:N ratio (12.0 in hairy vetch) to $15.1mg\;kg^{-1}$ in a high C:N ratio (78.2 in rice straw). This result indicated that the amount of inorganic N available for crop uptake can be predicted by temperature and C:N ratio of organic amendment. Consequently, it is suggested that the amount of organic fertilizer application in paddy soil would be determined based on temperature observations and C:N ratio, which represent the decomposition characteristics of organic amendments.

• Journal of the Korean institute of surface engineering
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• v.47 no.2
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• pp.75-80
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• 2014

Nanocrystalline diamond(NCD) films on steel(SKH51) has been investigated using SiC interlayer film. SiC was deposited on SKH51 or Si wafer by RF magnetron sputter. NCD was deposited on SiC at $600^{\circ}C$ for 0.5~4 h employing microwave plasma CVD. Film morphology was observed by FESEM and FIB. Film adherence was examined by Rockwell C adhesion test. The growth rate of NCD on SiC/Si substrate was much higher than that on SiC/SKH51. During particle coalescence, NCD growth rate was slow since overall rate was determined by the diffusion of carbon on SiC surface. After completion of particle coalescence, NCD growth became faster with the reaction of carbon on NCD film controlling the whole process. In the case of SiC/SKH51 substrate, a complete NCD film was not formed even after 4 h of deposition. The adhesion test of NCD/SiC/SKH51 samples revealed a delamination of film whereas that of SiC/SKH51 showed a good adhesion. Many voids of less than 0.1 ${\mu}m$ were detected on NCD/SiC interface. These voids were believed as the reason for the poor adhesion between NCD and SiC films. The origin of voids was due to the insufficient coalescence of diamond particles on SiC surface in the early stage of deposition.

• Journal of Aquaculture
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• v.10 no.3
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• pp.311-320
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• 1997

The experiment was conducted t determine the effects of water temperature and daily feeding rate on Koran rockfish growth. The first experiment was carried out to know the growth of the fish in the different water temperature. The second experiment was carried out to know the effects of feeding rate of the fish. In the first experiment, feed efficiency was unaffected by the different water temprature 12, 15 and $18^{\circ}C$, but feed intake and growth rate were affected by the water temperature. Feed intake and growth rate of the fish reared in $15^{\circ}C$ were higher than those of the other groups. In the second experiment, feed efficiency was unaffected by feeding rate except the starve group. Daily growth rate of the fish fed 1.0% diet/BW or more. HSI, VSI, condition factor, GOT, GPT, TG, GL and Ht of fed groups were unaffected by the feeding rate in the experiment. Absoption ratios of protein and lipid were not different with the different feeding rates in fed fish groups. These results indicate that the optimum daily feeding rate of yearling Korean rockfish is about 70-80% of satiation rate.

• Journal of Embryo Transfer
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• v.29 no.1
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• pp.13-19
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• 2014

This study was carried out to study the survival rate of thawed Hanwoo embryos frozen by the slow-rate freezing or the cryotop vitrification method. Hanwoo cumulus-oocyte complexes were recovered from ovaries at a slaughter house, matured for 20~22 hours, fertilized with Hanwoo semen for 5~6 hours, and cultured for 7~9 days in $38.5^{\circ}C$, 5% $CO_2$ incubator. For freezing, Day 7~9 blastocysts were collected. Embryos for the slow-rate freezing were equilibrated in 1.8 M ethylene glycol (EG) with Dulbecco's phosphate-buffered saline (D-PBS). Programmable cell freezer was precooled down to $-7^{\circ}C$, and the straw was seeded during 8 minutes-holding time, and was cooled to $-35^{\circ}C$ at the cooling rate of $0.3^{\circ}C/min$, and then was plunged and stored in liquid nitrogen. Embryos for the cryotop vitrification were treated in TCM199 with 0.5 M sucrose, 16% EG, 16% dimethylsulfoxide (DMSO). Embryos were then loaded individually onto cryotop and plunged directly into liquid nitrogen. The survival rates of embryos frozen by these two freezing methods were evaluated at 12 to 24h post-thawing. The survival rates of frozen/thawed Hanwoo embryos by the cryotop vitrification method ($56.86{\pm}26.53%$) were slightly higher than those by the slow-rate freezing method ($55.07{\pm}26.43%$) with no significant difference. Using the cryotop vitrification and the slow-rate freezing of Hanwoo blastocysts on Day 7 following in-vitro fertilization (IVF) treatment, the survival rates of frozen/thawed Hanwoo embryos were $72.65{\pm}18.3%$ and $79.06{\pm}17.8%$, respectively. The survival rates by the cryotop vitrification were higher than those by the slow-rate freezing on both Day 8 and 9 with significantly higher survival rate on Day 9 (p<0.05). Using the cryotop vitrification and the slow-rate freezing of Hanwoo embryos to compare between three different blastocyst stages, the survival rates of the blastocyst stage embryos were $66.22{\pm}18.8%$ and $45.76{\pm}12.8%$, respectively with higher survival rate by the vitrification method (p<0.05). And the survival rate of expanded blastocysts was higher than those of early blastocysts and blastocysts in two freezing methods with significantly higher survival rate by the slow-rate freezing method (p<0.05).