• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.335-336
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• 2009

저가격 고효율 실리콘 태양전지를 구현하기 위하여 핵심적으로 적용되는 공정인 SOD(Spin on Doping) 확산공정 최적화에 관하여 연구하였다. n-type 도핑 물질로는 인(P509)을 사용하였으며, Spinning 속도와 Spinning 시간을 각 3000 rpm, 30 초로 고정하고 급속 열처리로에서 확산 온도와 확산 시간을 $800\;^{\circ}C\;{\sim}\;950\;^{\circ}C$, 2 분에서 20 분까지 가변하며 확산공정을 실시하였다. 4-Point Probe 장비로 에미터 표면 저항을 측정한 결과 확산 온도 $850\;^{\circ}C$에서 5분간 열처리 하여 확산 공정을 하였을 때 저가의 고효율 실리콘 태양전지를 구현하는데 적용 하기위한 $30\;{\sim}\;50\;{\Omega}$-sq의 에미터 표면 저항을 만족 시키는 $36\;{\Omega}$-sq의 값을 얻을 수 있었다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.5
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• pp.410-414
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• 2013

Rapid thermal processing (RTP) abruptly decreases the time required to perform solar cell processes. RTP were used to form emitter of crystalline silicon solar cells. The emitter sheet resistance is studied as a function of time and temperature. The objective of this study is reduction of doping process time with same performance. Emitter difRapid thermal dfusion was carried out by using a spin on doping and a RTP. iffusion was performed in the temperature range of $700{\sim}750^{\circ}C$ for 1m 30s~15 m. Thermal budgets yielded a $50{\Omega}/sq$ emitter using a P509 source. To reduce process time and get high efficiency, rapid thermal diffusion by IR lamp was employed in air atmosphere at $700^{\circ}C$ for 15 m.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.262-263
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• 2007

Effect of co-doping on optical and electrical properties of $SnO_2$ based thin films were studied. $SnO_2$ ceramic targets with up to 50mol% $CuSb_2O_6$ were prepared by sintering mixed-oxide compact in the temperature range of $1100^{\circ}C{\sim}1300^{\circ}C$ in air. Thin films were then deposited onto glass substrates by pulsed laser deposition where substrate temperature was maintained in the range of $500{\sim}650^{\circ}C$ with oxygen pressure of 3m~7.5mTorr and energy density of $1Jcm^{-2}$. It was found that with the increase amount of dopant, the electrical properties of thin films tended to improve with the smallest resistivity value obtained at about 8mol% doping, further increase, however, usually impaired the optical transmission in the visible range.

• Journal of the Korean Chemical Society
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• v.29 no.2
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• pp.111-120
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• 1985

The oxidation reaction of CO on the catalysts 4 mol%, 8 mol%, and 12 mol% Cd-doped ${\alpha}-Fe_2O_3$ is individually investigated. Regardless of Cd doping level, over-all reaction order for the oxidation of CO is 1.5; the first order with respect to CO and the one-half order with respect to $O_2$. Over the temperature range of 350∼$460^{\circ}C$, the activation energy for CO oxidation is 10.10∼11.30Kcal/mol. From the agreement between the kinetic data and conductivity measurements, the reaction mechanism is suggested. Especially from the effect of Cd doping, the fact that catalytic activity of ${\alpha}-Fe_2O_3$ is due to the excitation of electrons which are traped on oxygen vacancy is found, and the adsorption sites for reactant molecules are found.

• Journal of the Korean Applied Science and Technology
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• v.32 no.1
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• pp.1-6
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• 2015

We investigated green phosphorescent organic light-emitting diodes with stepwise doping to improve efficiency roll-off and operational lifetime by efficient distribution of triplet excitons. The host material which was 4,4,N,N'-dicarbazolebiphenyl (CBP) of bipolar characteristic that can control the carrier in emitting layer (EML). When the EML devided into four parts with different doping concentration, each devices shows various efficiency roll-off and lifetime enhancement. The distribution of the carrier and excitons in the EML can be confirmed by using stepwise doping structure. The properties of device C exhibited luminous efficiency of 51.10 cd/A, external quantum efficiency of 14.88%, respectively. Lifetime has increased 73.70% compared to the reference device.

• Journal of Hydrogen and New Energy
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• v.26 no.5
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• pp.416-422
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• 2015

Lithium Ion capacitor (LIC) is a new storage device which combines high power density and high energy density compared to conventional supercapacitors. LIC is capable of storing approximately 5.10 times more energy than conventional EDLCs and also have the benefits of high power and long cycle-life. In this study, LICs are assembled with activated carbon (AC) cathode and pre-doped graphite anode. Cathode material of natural graphite and artificial graphite kinds of MAGE-E3 was selected as the experiment proceeds. Super-P as a conductive agent and PTFE was used as binder, with the graphite: conductive agent: binder of 85: 10: 5 ratio of the negative electrode was prepared. Lithium doping condition of current density of $2mA/cm^2$ to $1mA/cm^2$, and was conducted by varying the doping. Results Analysis of Inductively Coupled Plasma Spectrometer (ICP) was used and a $1mA/cm^2$ current density, $2mA/cm^2$, when more than 1.5% of lithium ions was confirmed that contained. In addition, lithium ion doping to 0.005 V at 10, 20 and $30^{\circ}C$ temperature varying the voltage variation was confirmed, $20^{\circ}C$ cell from the low internal resistance of $4.9{\Omega}$ was confirmed.

• Nuclear Engineering and Technology
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• v.55 no.7
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• pp.2556-2566
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• 2023

A first-principle approach within the framework of density functional theory was employed to study the effect of vacancy defects and fission products (FPs) doping on the mechanical, electronic, and thermodynamic properties of uranium monocarbide (UC). Firstly, the calculated vacancy formation energies confirm that the C vacancy is more stable than the U vacancy. The solution energies indicate that FPs prefer to occupying in U site rather than in C site. Zr, Mo, Th, and Pu atoms tend to directly replace U atom and dissolve into the UC lattice. Besides, the results of the mechanical properties show that U vacancy reduces the compressive and deformation resistance of UC while C vacancy has little effect. The doping of all FPs except He has a repairing effect on the mechanical properties of U_1-xC. In addition, significant modifications are observed in the phonon dispersion curves and partial phonon density of states (PhDOS) of UC_1-x, Zr_xU_1-xC, Mo_xU_1-xC, and Rh_xU_1-xC, including narrow frequency gaps and overlapping phonon modes, which increase the phonon scattering and lead to deterioration of thermal expansion coefficient (α_V) and heat capacity (C_p) of UC predicted by the quasi harmonic approximation (QHA) method.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.79-79
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• 2009

Samples of Ta-doped in $In_2O_3-ZnO-SnO_2$(IZTO) with a doping level up to 4wt% were sintered at $1600^{\circ}C$ in $O_2$. The crystal phase of the samples was identified by an X-ray diffraction experiment. apparent density and porosity with sintered temperature from $1500^{\circ}C$ to $1640^{\circ}C$ are mesured by archimedes method. For each sample, the specific resistivity was determined. samples of sintered at $1600^{\circ}C$ had the highest density and lowest porousity and The Ta 0.25-wt%-doped IZTO ceramics had the lowest resistivity.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.752-755
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• 2006

Reverse annealing was observed in $P^+/B^+$ ion shower doped poly-Si upon activation annealing. Phosphorous or boron was implanted by ion shower doping using a source gas mixture of $PH_3/H_2$ or $B_2H_6/H_2$. Activation annealing was conducted using a tube furnace in the temperature ranges from $350^{\circ}C$ to $650^{\circ}C$. Hall measurement revealed that reverse annealing begins at different annealing temperatures for poly-Si implanted with P and B, respectively. It was observed that reverse annealing starts at $550^{\circ}C$$ in $P^+$ ion shower doped poly-Si, while at $350^{\circ}C$ in the case of B-doping.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.18 no.6
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• pp.248-252
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• 2008

To get a fine $LiFePO_4$ powder with high electrical conductivity, the influences of doping of aliovalent elements(Cr+B and Cr+Al) on electrical conductivity and of heat treatment conditions on particle size of the doped powders were studied. Two kinds of the doped powders $LiFe_{0.965}Cr_{0.03}B_{0.005}PO_4$ and $LiFe_{0.065}Cr_{0.03}Al_{0.005}PO_4$ were synthesized using mechanochemical milling and subsequent heat treatment at $675{\sim}750^{\circ}C$ for $5{\sim}10\;h$. The doping enhanced grain growth and electrical conductivity. The electrical conductivity at $30^{\circ}C$ was $1{\times}10^{-8}S/cm$ in the doped with Cr and Al, and $5{\times}10^{-10}S/cm$ in the undoped one.