• Korean Journal of Mathematics
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• v.16 no.2
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• pp.215-231
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• 2008

Let E be a uniformly convex Banach space with a uniformly $G{\hat{a}}teaux$ differentiable norm, C a nonempty closed convex subset of E, and $T:C{\rightarrow}{\mathcal{K}}(E)$ a multivalued nonself-mapping such that $P_T$ is nonexpansive, where $P_T(x)=\{u_x{\in}Tx:{\parallel}x-u_x{\parallel}=d(x,Tx)\}$. For $f:C{\rightarrow}C$ a contraction and $t{\in}(0,1)$, let $x_t$ be a fixed point of a contraction $S_t:C{\rightarrow}{\mathcal{K}}(E)$, defined by $S_tx:=tP_T(x)+(1-t)f(x)$, $x{\in}C$. It is proved that if C is a nonexpansive retract of E and $\{x_t\}$ is bounded, then the strong ${\lim}_{t{\rightarrow}1}x_t$ exists and belongs to the fixed point set of T. Moreover, we study the strong convergence of $\{x_t\}$ with the weak inwardness condition on T in a reflexive Banach space with a uniformly $G{\hat{a}}teaux$ differentiable norm. Our results provide a partial answer to Jung's question.

• Korean Journal of Materials Research
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• v.9 no.8
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• pp.849-853
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• 1999

In the study, superconducting properties of $Bi_2$-x(sub)$LSr_2$Ca(sub)1+x(sub)$LCu_2$O(sub)8+d (x(sub)L=0, 0.05, 0.1, 0.2) films prepared by the LPE method was investigated. The peak decompositions of Sr3d and Ca2p XPS spectra, together with the EPMA results, elucidated the occupancies of Bi, Sr and Ca atoms on the SrO- and Ca-layers. The lattice parameter c monotonically increased with increasing x(sub)L for $0\leq$x(sub)L$\leq$0.2. The superconducting critical temperature T(sub)c showed a maximum value around x(sub)L=0.1. The x(sub)L dependence of the superconducting critical temperature T(sub)c and the lattice parameter c are explained by the changes of the excess oxygens in the BiO-layer. Since distribution and deficiency of the atoms in SrO-layer have influenced on superconducting properties and crystal structure.

• 한국신재생에너지학회:학술대회논문집
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• 2009.06a
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• pp.33-36
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• 2009

고효율 양자점 태양전지를 위하여 $Si_{1-x}C_x$ 박막 내에 Si 양자점을 형성한 박막을 제작하고 그 특성을 분석하였다. $Si_{1-x}C_x$ 박막은 Si과 C target을 co-sputtering하여 증착하였다. C target의 RF power를 변화시켜 $Si_{1-x}C_x$ 박막의 조성비를 조절하였으며, 조성비는 auger electron spectroscopy로 정량적으로 측정하였다. 이 박막들을 질소 분위기에서 후 열처리하여 high resolution transmittance electron microscopy로 확인한 결과 박막 내에 2~10nm 크기의 양자점이 형성된 것을 관측할 수 있었다. 이 양자점은 transmittance electron diffraction과 grazing incident X-ray diffraction을 통해 Si 양자점과 SiC 양자점이 형성되었음을 알 수 있었다. Raman 측정 결과에서는 후 열처리한 $Si_{1-x}C_x$ 박막의 조성비가 증가할 수록 crystal Si peak의 shift가 증가함을 알 수 있었고, 이를 통해 양자점의 크기도 함께 계산할 수 있었다. Fourier transform infrared spectroscopy을 통해 후 열처리한 Si1-xCx 박막의 양자점의 형성 원인을 추정하였다.

• Bulletin of the Korean Mathematical Society
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• v.38 no.2
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• pp.347-355
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• 2001

Let ($X, \omega$) be a closed symplectic 4-manifold. Let a finite cyclic group G act semifreely, holomorphically on X as isometries with fixed point set $\Sigma$(may be empty) which is a 2-dimension submanifold. Then there is a smooth structure on the quotient X'=X/G such that the projection $\pi$:X$\rightarrow$X' is a Lipschitz map. Let L$\rightarrow$X be the Spin$^c$ -structure on X pulled back from a Spin$^c$-structure L'$\rightarrow$X' and b_2^$+(X')>1. If the Seiberg-Witten invariant SW(L')$\neq$0 of L' is non-zero and $L=E\bigotimesK^-1\bigotimesE$ then there is a G-invariant pseudo-holomorphic curve u:$C\rightarrowX$,/TEX> such that the image u(C) represents the fundamental class of the Poincare dual $c_1$(E). This is an equivariant version of the Taubes' Theorem.

• Electrical & Electronic Materials
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• v.10 no.6
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• pp.533-540
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• 1997

The microwave dielectric properties of ((P $b_{1-x}$ C $a_{x}$)Zr $O_3$ and (P $b_{0.63}$,C $a_{0.37-x}$ $M_{x}$)Zr $O_3$(M=Mg,Sr) ceramics were investigated. In (P $b_{1-x}$ C $a_{x}$)Zr $O_3$ (X=0.33~0.40) ceramics, high quality factor and small temperature coefficient of resonant frequency were obtain in (P $b_{0.63}$C $a_{0.37}$)Zr $O_3$with perovskite structure. In the case of (P $b_{0.63}$C $a_{0.37-x}$M $g_{x}$)Zr $O_3$ dielectric constant temperature coefficient of resonant frequency increased and quality factor decreased due to increase of polarization of A-O bonding. When replacing Ca ion with Sr ion with large ion radius, polarization decreased with increased of bonding length and thus dielectric constant and temperature coefficient of resonant frequency decreased.decreased.creased.

• Electrical & Electronic Materials
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• v.10 no.6
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• pp.541-547
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• 1997

(Pb$_{1-x}$ La$_{x}$)Ti$_{1-x}$ $_4$O$_3$(x=0, 0.02, 0.04, 0.08) ceramic thin films were fabricated by Sol-Gel method. A stock solution of (Pb, La)TiO$_3$ with excess Pb 10 mol% was made and spin-coated on the Pt/Ti/SiO$_2$/Si substrate at 400rpm for 30 seconds. Coated specimens were dried on the hot-plate at 35$0^{\circ}C$ for 10 min and sintered at 500~75$0^{\circ}C$ for 1 hour. The dielectric constant, remanent polarization and coercive field of the PLT(6at.%) thin films sintered at $650^{\circ}C$ were 884, 13.95$\mu$C/$\textrm{cm}^2$ and 8.7kV/cm, respectively. Pyroelectric coefficient, figure of merit of pyroelectric current, voltage responsivity and detectivity of PLT(6at.%) thin films were 3.2$\times$10$^{-8}$ C/$\textrm{cm}^2$K, 1.02$\times$10$^{-8}$ C.cm/J, 2.9 $\times$10$^{-11}$ C.cm/J, 0.29$\times$10$^{-8}$ C.cm/J, respectively.ely.

• Bulletin of the Korean Mathematical Society
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• v.33 no.4
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• pp.631-638
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• 1996

The parabolic free boundary problem with Puschino dynamics is given by (see in [3]) $$ (1) { \upsilon_t = D\upsilon_{xx} - (c_1 + b)\upsilon + c_1 H(x - s(t)) for (x,t) \in \Omega^- \cup \Omega^+, { \upsilon_x(0,t) = 0 = \upsilon_x(1,t) for t > 0, { \upsilon(x,0) = \upsilon_0(x) for 0 \leq x \leq 1, { \tau\frac{dt}{ds} = C)\upsilon(s(t),t)) for t > 0, { s(0) = s_0, 0 < s_0 < 1, $$ where $\upsilon(x,t)$ and $\upsilon_x(x,t)$ are assumed continuous in $\Omega = (0,1) \times (0, \infty)$.

• Food Science and Biotechnology
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• v.18 no.3
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• pp.618-623
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• 2009

Synergistic interactions between xanthan (X) and carob (C) were investigated by studying the linear viscoelastic behavior of X, C, and X/C mixtures at sol and gel states. At the solution state, storage modulus (G') dominates the linear viscoelastic properties of X/C mixtures. The gelation temperature (52 to $57^{\circ}C$) was weakly dependent on the xanthan fraction (${\phi}x$) in the mixture. The ${\phi}x$ also had a strong effect on G' until ${\phi}x=0.5$. The elastic active network concentration (EANC) of X/C gels was estimated from the pseudo-equilibrium modulus. The EANC for systems with ${\phi}x=0.25$, 0.5, 0.75, and 1 at 1% total concentration was 2.3, 4.4, 4.1, and 0.32 (${\times}10^{-3}\;mol/m^3$), respectively. The maximum synergistic effect was observed at about ${\phi}x=0.5$. The G' at the transition state of X/C mixed gel was proportional to ${\omega}^{3/2}$ at ${\omega}$>${\omega}_{tr}$ (the onset transition frequency) compared to the theoretical limit of ${\omega}^{1/2}$.

• Journal of the Korean Magnetics Society
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• v.9 no.5
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• pp.234-238
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• 1999

Lithium ferrites are prominent in the element of microwave frequency communication core and high frequency memory core because of their low coercivity and the high squareness ratio. This paper reports primarily the development of lithium ferrites with the low coercivity and high squareness ratio. The materials with $Li_{0.48-0.5x}Bi_{0.02}Ni_{0.04}Zn_xFe_{2.46-0.5x}O_4$ (x = 0,0.01, 0.02, 0.03) have been prepared to investigate the physical properties. The addition of ZnO gave raised maximum induction $(B_m)$ and decreased coercive force $(H_c)$, but the squareness ratio $(R\;=\;B_m/B_r)$ was decreased. The specimen of squareness ratio R=0.82, coercive force $H_c=\;1.80\;Oe$ was obtained for $Li_{0.48-0.5x}Bi_{0.02}Ni_{0.04}Zn_xFe_{2.46-0.5x}O_4$ (X=0) sintered at 105$0^{\circ}C$. Also the sample of squareness ratio R = 0.75, coercive force $H_c=\;1.70\;Oe$ for $Li_{0.48-0.5x}Bi_{0.02}Ni_{0.04}Zn_xFe_{2.46-0.5x}O_4$ (X = 0) sintered at 110$0^{\circ}C$ was measured. The Tc was obtained 463$^{\circ}C$ and the Br of environmental temperature variation was stable.

• Journal of the Korean Ceramic Society
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• v.34 no.8
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• pp.908-913
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• 1997

Multilayer NbCxC1-x/Y2O3/Ti were sputter-coated on the alumina substrate, starting with a 0.7 ㎛ thick NbCxC1-x layer grown on substrate, followed by 0.7 ㎛ thick Y2O3 layer and 1 ㎛ thick Ti layer. To find out the optimum conditions for thickness uniformity and adhesion, sputtering works have been done with the variation of sputtering power and Ar pressure. After vacuum annealing at 950℃ and 1000℃, the thermal stability of the NbCxC1-x/Y2O3/Ti coated alumina substrates has been investigated by peel off test. The coating scheme didn't cause any debonded layer after an annealing at 950℃ for 3hrs. However, it was peeled off after annealing at 1000℃ for 3hr. It was found that the thermal stability of Al2O3/NbCxC1-x/Y2O3/Ti coating scheme changed with the NbCxC1-x composition.