• 한국초전도학회:학술대회논문집
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• 2009.07a
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• pp.39-39
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• 2009

• 한국초전도학회:학술대회논문집
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• 2009.07a
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• pp.54-54
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• 2009

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.435-438
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• 2007

$V_{2}O_{5}$ was tested as a p-dopant for lower operating voltage and higher stability of OLEDs. Low voltage and high stability were achieved using this doping layer. It can be separated to bulk and interface contributions and the latter is a more dominant factor both of operation voltage and stability.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.453-456
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• 1999

The Si-SiO$_2$interface trap and nitride bulk trap distribution of SONOSFET(polysilicon-oxide-nitride-oxide-semiconductor)NVSM(nonvolatile semiconductor memory) cell were investigated by single charge pumping method. The used device was fabricated by 0.35 7m standard logic fabrication including the ONO cell process. This ONO dielectric thickness is tunnel oxide 24 $\AA$, nitride 74 $\AA$, blocking oxide 25 $\AA$, respectively. Keeping the pulse base level in accumulation and pulsing the surface into inversion with increasing amplitudes, the charge pumping current flow from the single junction. Using the obtained I$_{cp}$-V$_{h}$ curve, the local V$_{t}$ distribution, doping concentration, lateral interface trap distribution and lateral memory trap distribution were extracted. The maximum N$_{it}$($\chi$) of 1.62$\times$10$^{19}$ /cm$^2$were determined.mined.d.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.297-297
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• 2010

Precise control of the position and density of doping elements at the nanoscale is becoming a central issue for realizing state-of-the-art silicon-based optoelectronic devices. As dimensions are scaled down to take benefits from the quantum confinement effect, however, the presence of interfaces and the nature of materials adjacent to silicon turn out to be important and govern the physical properties. Utilization of visible light is a promising method to overcome the efficiency limit of the crystalline Si solar cells. Si quantum dots (QDs) have been proposed as an emission source of visible light, which is based on the quantum confinement effect. Light emission in the visible wavelength has been reported by controlling the size and density of Si QDs embedded within various types of insulating matrix. For the realization of all-Si QD solar cells with homojunctions, it is prerequisite not only to optimize the impurity doping for both p- and n-type Si QDs, but also to construct p-n homojunctions between them. In this study, XPS and SIMS were used for the development of p-type and n-type Si quantum dot solar cells. The stoichiometry of SiOx layers were controlled by in-situ XPS analysis and the concentration of B and P by SIMS for the activated doping in Si nano structures. Especially, it has been experimentally evidenced that boron atoms in silicon nanostructures confined in SiO2 matrix can segregate into the Si/$SiO_2$ interfaces and the Si bulk forming a distinct bimodal spatial distribution. By performing quantitative analysis and theoretical modelling, it has been found that boron incorporated into the four-fold Si crystal lattice can have electrical activity. Based on these findings, p-type Si quantum dot solar cell with the energy-conversion efficiency of 10.2% was realized from a [B-doped $SiO_{1.2}$(2 nm)/$SiO_2(2\;nm)]^{25}$ superlattice film with a B doping level of $4.0{\times}10^{20}\;atoms/cm^2$.

• Proceedings of the Korean Society of Medical Physics Conference
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• 2003.09a
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• pp.45-45
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• 2003

The aim of this study was the characterization and performance validation of new prototype avalanche photodiode (APD) arrays for positron emission tomography (PET). Two different APD array prototypes (noted A and B) developed by Radiation Monitoring Device (RMD) have been investigated. Principal characteristics of the two APD array were measured and compared. In order to characterize and evaluate the APD performance, capacitance, doping concentration, quantum efficiency, gain and dark current were measured. The doping concentration that shows the impurity distribution within an APD pixel as a function of depth was derived from the relationship between capacitance and bias voltage. Quantum efficiency was measured using a mercury vapor light source and a monochromator used to select a wavelength within the range of 300 to 700 nm. Quantum efficiency measurements were done at 500 V, for which the APD gain is equal to one. For the gain measurements, a pencil beam with 450 nm in wavelength was illuminating the center of each pixel. The APD dark currents were measured as a function of gain and bias. A linear fitting method was used to determine the value of surface and bulk leakage currents. Mean quantum efficiencies measured at 400 and 450 nm were 0.41 and 0.54, for array A, and 0.50 and 0.65 for array B. Mean gain at a bias voltage of 1700 V, was 617.6 for array A and 515.7 for type B. The values based on linear fitting were 0.08${\pm}$0.02 nA 38.40${\pm}$6.26 nA, 0.08${\pm}$0.0l nA 36.87${\pm}$5.19 nA, and 0.05${\pm}$0.00 nA, 21.80${\pm}$1.30 nA in bulk surface leakage current for array A and B respectively. Results of characterization demonstrate the importance of performance measurement validating the capability of APD array as the detector for PET imaging.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.12
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• pp.961-968
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• 2012

In this study, we have investigated the effects of Mn and Co co-doping on defects, J-E curves and grain boundary characteristics of ZnO-$Bi_2O_3$ (ZB) varistor. Admittance spectra and dielectric functions show two bulk defects of $Zn_i^{{\cdot}{\cdot}}$ (0.17~0.18 eV) and $V_o^{\cdot}$ (0.30~0.33 eV). From J-E characteristics the nonlinear coefficient (${\alpha}$) and resistivity (${\rho}_{gb}$) of pre-breakdown region decreased as 30 to 24 and 5.1 to 0.08 $G{\Omega}cm$ with sintering temperature, respectively. The double Schottky barrier of grain boundaries in ZB(MCo) ($ZnO-Bi_2O_3-Mn_3O_4-Co_3O_4$) could be electrochemically single type. However, its thermal stability was slightly disturbed by ambient oxygen because the apparent activation energy of grain boundaries was changed from 0.64 eV at lower temperature to 1.06 eV at higher temperature. It was revealed that a co-doping of Mn and Co in ZB reduced the heterogeneity of the barrier in grain boundaries and stabilized the barrier against an ambient temperature (${\alpha}$-factor= 0.136).

• Journal of Environmental Science International
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• v.17 no.11
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• pp.1195-1201
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• 2008

Enhancing with non-metallic elemental nitrogen(N) is one of several methods that have been proposed to modify the electronic properties of bulk titanium dioxide($TiO_2$), in order to make $TiO_2$ effective under visible-light irradiation. Accordingly, current study evaluated the feasibility of applying visible-light-induced $TiO_2$ enhanced with N element to cleanse aromatic compounds, focusing on xylene isomers at indoor air quality(IAQ) levels. The N-enhanced $TiO_2$ was prepared by applying two popular processes, and they were coated by applying two well-known methods. For three o-, m-, and p-xylene, the two coating methods exhibited different photocatalytic oxidation(PCO) efficiencies. Similarly, the two N-doping processes showed different PCO efficiencies. For all three stream flow rates(SFRs), the degradation efficiencies were similar between o-xylene and m,p-xylene. The degradation efficiencies of all target compounds increased as the SFR decreased. The degradation efficiencies determined via a PCO system with N-enhanced visible-light induced $TiO_2$ was somewhat lower than that with ultraviolet(UV)-light induced unmodified $TiO_2$, which was reported by previous studies. Nevertheless, it is noteworthy that PCO efficiencies increased up to 94% for o-xylene and 97% for the m,p-xylene under lower SFR(0.5 L $min^{-1}$). Consequently, it is suggested that with appropriate SFR conditions, the visible-light-assisted photocatalytic systems could also become important tools for improving IAQ.

• Journal of the Korean Ceramic Society
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• v.44 no.12
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• pp.655-659
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• 2007

Zirconia polycrystals co-doped with x mol% CaO and (10-x) mol% $Y_2O_3$ were prepared by solid state reaction method. The compositions were chosen for nominally the same oxygen vacancy concentration of 5 mol%. X-ray diffraction patterns indicated the formation of cubic zirconia by heat treatment at $1600^{\circ}C$. Impedance spectroscopy was applied to deconvolute the bulk and grain boundary response. Electrical conductivity was measured using the complex impedance technique from 516 to 874 K in air. Maximum conductivity was exhibited by the composition with equal amounts of CaO and $Y_2O_3$, which may be ascribed to the smaller degree of defect-interactions in that composition due to the competition of different ordering schemes between the two systems. When compared to the composition containing $Y_2O_3$ only, co-doping of CaO increases the grain boundary resistance considerably. The activation energy of grain and grain boundary conductivity was 1.1 eV and 1.2 eV, respectively, with no appreciable dependence on dopant compositions.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.238-239
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• 2010

Dimethyl sulphoxide (DMSO) is one of the widely-used secondary dopants in order to enhance the conductivity of poly(3, 4-ethylenedioxy-thiophene):poly(styrene sulfonate) (PEDOT:PSS) film. In this work, we investigated the effect of DMSO doping in to PEDOT:PSS on the electrical performance of the bulk heterojunction photovoltaics consisting of poly(3-hexylthiophene-2, 5-diyl) and phenyl-C61-butyric acid methyl ester. Correlation between the power conversion efficiency and the mechanism of improving conductivity, surface morphology, and contact properties was examined. The PEDOT:PSS films, which contain different concentration of DMSO, have been prepared and annealed at different annealing temperatures. The mixture of DMSO and PEDOT:PSS was prepared with a ratio of 1%, 5%, 15%, 25%, 35%, 45%, 55% by volume of DMSO, respectively. The DMSO-contained PEDOT:PSS solutions were stirred for 1hr at $40^{\circ}C$, then spin-coated on the ultra-sonicated glass. The spin-coated films were baked for 10min at $65^{\circ}C$, $85^{\circ}C$, and $120^{\circ}C$ in air. In order to investigate the electrical performance, P3HT:PCBM blended film was deposited with thickness of 150nm on DMSO-doped PEDOT:PSS layer. After depositing 100nm of Al, the device was post-annealed for 30min at $120^{\circ}C$ in vacuum. The fabricated cells, in this study, have been characterized by using several techniques such as UV-Visible spectrum, 4-point probe, J-V characteristics, and atomic force microscopy (AFM). The power conversion efficiency (AM 1.5G conditions) was increased from 0.91% to 2.35% by tuning DMSO doping ratio and annealing temperature. It is believed that the improved power conversion efficiency of the photovoltaics is attributed to the increased conductivity, leading to increasing short-circuit current in DMSO-doped PEDOT:PSS layer.