• 대한금속재료학회지
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• 제47권8호
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• pp.488-493
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• 2009

Direct syntheses of bulk $Ti_3Al$ via electro-discharge-sintering (EDS) of a stoichiometric elemental powder mixture were investigated. A capacitor bank of $450{\mu}F$ was charged with three input energies, 0.5, 1.0, and 1.5 kJ. The charged capacitor bank was then instantaneously discharged through 0.3 g of a Ti-25.0 at.%Al powder mixture for consolidation. Complete phase transformation occurred in less than $200{\mu}sec$ by the discharge and a bulk $Ti_3Al$ compact was obtained. Compared with consolidated samples fabricated by conventional methods such as high vacuum sintering and casting, the electro-discharge-sintered $Ti_3Al$ compact shows a very fine microstructure with a hardness value of 425 Hv. Electro-discharge-sintering under a $N_2$ atmosphere successfully modified the surface Ti oxide of the $Ti_3Al$ compact into Ti nitride, which concurred with the synthesis and consolidation of $Ti_3Al$. Complete conversion yielding a single phase $Ti_3Al$ is primarily dominated by the fast solid state diffusion reaction.

• 한국분말야금학회:학술대회논문집
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• 한국분말야금학회 1999년도 춘계학술대회 및 발표대회 강연 및 발표논문 초록집
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• pp.5-5
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• 1999

The Principal deficiency of the existing notion about the sintering-mixtures consists in the fact that almost no attention is focused on the Phenomenon of alloy formation during sintering, its connection with dimensional changes of powder bodies, and no correct ideas on the driving force for the sintering process in the stage of establishing chemical equilibrium in a system are available as well. Another disadvantage of the classical sintering theory is an erroneous conception on the dissolution mechanism of solid in liquid. The two-particle model widely used in the literature to describe the sintering phenomenon in solid state disregards the nature of the neighbouring surrounding particles, the presence of pores between them, and the rise of so called arch effect. In this presentation, new basic scientific principles of the driving forces for the sintering process of a two-component powder body, of a diffusion mechanism of the interaction between solid and liquid phases, of stresses and deformation arising in the diffusion zone have been developed. The major driving force for sintering the mixture from components capable of forming solid solutions and intermetallic compounds is attributed to the alloy formation rather than the reduction of the free surface area until the chemical equilibrium is achieved in a system. The lecture considers a multiparticle model of the mixed powder-body and the nature of its volume changes during solid-state and liquid-phase sintering. It explains the discovered S-and V-type concentration dependencies of the change in the compact volume during solid-state sintering. It is supposed in the literature that the dissolution of solid in liquid is realised due to the removal of atoms from the surface of the solid phase into the melt and then their diffusicn transfer from the solid-liquid interface into the bulk of liquid. It has been shown in our experimental studies that the mechanism of the interaction between two components, one of them being liquid, consist in diffusion of the solvent atoms from the liquid into the solid phase until the concentration of solid solutions or an intermetallic compound in the surface layer enables them to pass into the liquid by means of melting. The lecture discusses peculimities of liquid phase formation in systems with intermediate compounds and the role of the liquid phase in bringing about the exothermic effect. At the frist stage of liquid phase sintering the diffusion of atoms from the melt into the solid causes the powder body to grow. At the second stage the diminution of particles in size as a result of their dissolution in the liquid draws their centres closer to each other and makes the compact to shrink Analytical equations were derived to describe quantitatively the porosity and volume changes of compacts as a result of alloy formation during liquid phase sinteIing. Selection criteria for an additive, its concentration and the temperature regime of sintering to control the density the structure of sintered alloys are given.

• 대한약리학회지
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• 제29권1호
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• pp.149-156
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• 1993

Ethanol이 암세포 증식 속도에 미치는 직접적인 영향 검색의 일환으로 배양된 mouse myeloma cell line Sp2/0-Ag14로부터 분리한 형질막 (Sp2/0-PMV) 유동성에 미치는 ethanol의 영향을 형광분석법으로 측정하였다. 그 결과 ethanol은 Sp2/0-PMV 지질 이중층 측방확산운동의 범위와 속도를 증가시켰고 회전확산운동 범위도 증가시켰다. 특히 ethanol은 Sp2/0-PMV 지질이중층 중 내부단층 (inner monolayer)에 비하여 비교적 선택적으로 외부단층 (outer monolayer)의 회전확산운동 범위를 증가시킨다는 것을 확인하였다.

• 대한전자공학회논문지
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• 제26권6호
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• pp.38-47
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• 1989

헴트(HEMT) 소자의 순수 해석적 DC모델이 2차원 전하제어 시뮬레이션 결과[4]에 기초하여 제작되었다. 이 모델에서는 2-DEG 채널의 전자 운송 역학에 확산 효과를 추가하였다. 이 확산효과는 기존 1차원 DC모델에서 사용하는 전자 이동도 및 문턱전압을 증가시키는 효과를 가졌음을 보였다. 또한 2-DEG 농도분포함수를 piecewise 선형화하여 HEMT 소자의 subthreshold 특성의 해석적 모델을 추가하였고, 따라서 2-DEG의 채널 두께 및 게이트 용량을 게이트 전압의 함수로 나타내었다. I-V curve의 전류포화영역에서의 기울기를 모델하는데는 gate 밑의 전자포화채널 지역에서의 전자채널두께와 채널길이 변조현상을 함께 고려하였다. Troffimenkoff형의 전장의존 전자이동도를 사용하여 I-V곡선의 포화현상을 모델하였다. 또한 기존 1차원 모델에서 감안되지 않은 2차원 효과가 실제 전류특성곡선에서 매우 중요한 역할을 하며, 이 효과가 효과적으로 1개의 보정상수f로 보상됨을 보였고, 물리적으로 이 상수가 채널 GCA 지역과 채널포화지역 사이에 형성되는 채널천이지역의 전자농도와 관계됨을 보였다.

• 전자공학회논문지D
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• 제36D권4호
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• pp.48-56
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• 1999

본 논문에서는 초기 산소 농도가 고에너지 이온 주입시 결정 격자 손상에 의해 발생하는 산소 축적(pileup) 현상 및 주입된 불순물의 확산에 미치는 영향을 실험적으로 고찰하였다. 초기 산소 농도가 11.5, 15.5 ppma인 p-type (100)실리콘 웨이퍼에 \sup 11\B\sup +\ \sup 31\P\sup +\ 이온을 각각 1.2 MeV, 2.2 MeV 의 에너지로 1×10\sup 15\cm\sup 2\ 주입하고, 700℃(20시간)+1000℃(10시간)의 2단계 열처리를 거치 후 주입된 불순물 및 산소 농도의 분포를 이차이온질량분석기 (Secondary Ion Mass Spectrometry, SIMS)로 관찰하였으며 잔류 2차 결함의 분포는 투과전자현미경(Transmission Electron Microscopy, TEM)으로 관찰하였다. SIMS 측정 결과 산소의 축적이 {{{{ { R}_{ } }}}}\sub p\(projected range) 부근에서 관찰되었으며 열처리 후에도 상당한 양의 2차 결합 띠가 {{{{ { R}_{ } }}}}\sub p\부근에서 관찰되는 것으로 보아 2차 결함에 의해 산소가 포획되었음을 알 수 있다. 또한 붕소와 인의 확산은 웨이퍼의 초기 산소 농도가 클수록 벌크 방향으로의 확산이 증대되는 현상을 볼 수 있었다.

• Journal of Electrochemical Science and Technology
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• 제9권3호
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• pp.163-168
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• 2018

Biomass waste-derived carbon is an attractive alternative with environmental benignity to obtain carbon material. In this study, we prepare carbon from coffee grounds as a biomass precursor using a simple, inexpensive, and environmentally friendly method through physical activation using only steam. The coffee-derived carbon, having a micropore-rich structure and a low extent of graphitization of disordered carbon, is developed and directly applied to lithium-ion battery anode material. Compared with the introduction of the Ketjenblack (KB) conducting agent (i.e., coffee-derived carbon with KB), the coffee-derived carbon itself achieves a reversible capacity of ~200 mAh/g (0.54 lithium per 6 carbons) at a current density of 100 mA/g after 100 cycles, along with excellent cycle stability. The origin of highly reversible lithium storage is attributed to the consistent diffusion-controlled intercalation/de-intercalation reaction in cycle life, which suggests that the bulk diffusion of lithium is favorable in the coffee-derived carbon itself, in the absence of a conducting agent. This study presents the preparation of carbon material through physical activation without the use of chemical activation agents and demonstrates an application of coffee-derived carbon in energy storage devices.

• 한국진공학회지
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• 제12권3호
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• pp.174-181
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• 2003

본 논문은 탄탈 확산 방지막의 증착시 음의 기판 바이어스에 의한 탄탈막의 특성변화와 열적 안정성에 대해서 고찰하였다. 기판 바이어스를 걸지 않은 경우, 탄탈막은 원주형 모양의 결정 성장을 보이는 주상구조와 250 $\mu\Omega$cm의 높은 비저항값을 보였으나, 기판 바이어스를 걸어줌에 파라서 주상구조가 아닌 치밀한 미세구조와 표면이 평탄한 막이 형성되었고 비저항값도 현저히 감소되었으며, 특히 -125 V에서 증착된 탄탈막은 비저항값이 약 40 $\mu\Omega$cm로 이는 탄탈 벌크의 저항값 (13 $\mu\Omega$cm)에 근접한 값임을 알 수 있었다. 또한, 탄탈 확산 방지막의 열적 안정성에 대해서도, 기판 바이어스를 걸지 않은 탄탈막의 경우 $400^{\circ}C$에서 구리와 실리콘의 반응에 의해 비저항 값이 크게 증가한 결과에 비해, 기판 바이어스에 의해 증착된 탄탈막의 경우 $600^{\circ}C$까지 확산 방지막의 효과를 유지하고 있는 것으로 관찰되었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.286-287
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• 2012

Reset-first resistive switching mechanism based on reduction reaction in HfO2-x with oxygen drift-diffusion was studied. we first report that the indirect evidence of local filamentary conductive path formation in bulk HfO2 film with local TiOx region at Ti top electrode formed during forming process and presence of anion-migration at interface between electrode and HfO2 during resistive switching through high resolution transmission electron microscopy (HRTEM), electron disperse x-ray (EDX), and electron energy loss spectroscopy (EELS) mapping. Based on forming process mechanism, we expected that redox reaction from Ti/HfO2 to TiOx/HfO2-x was responsible for an increase of initial current with increasing the post-annealing process. First-reset resistive switching in above $350^{\circ}C$ annealed Ti/HfO2 film was exhibited and the redox phenomenon from Ti/HfO2 to TiOx/HfO2-x was observed with high angle annular dark field (HAADF) - scanning transmission electron microscopy (STEM), EDX and x-ray photoelectron spectroscopy. Therefore, we demonstrated that the migration of oxygen ions at interface region under external electrical bias contributed to bipolar resistive switching behavior.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.499-499
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• 2011

Silicon nanowires (Si NWs) have been extensively studied for nanoelectronics owing to their unique optical and electrical properties different from those of bulk silicon. For the development of Si NW devices, better understanding of oxidation behavior in Si NWs would be an important issue. For example, it is widely known that atomic scale roughness at the dielectric (SiOx)/channel (Si) interface can significantly affect the device performance in the nano-scale devices. However, the oxidation process at the atomic-scale is still unknown because of its complexity. In the present work, we investigated the oxidation behavior of Si NW in atomic scale by simulating the dry oxidation process using a reactive molecular dynamics simulation technique. We focused on the residual stress evolution during oxidation to understand the stress effect on oxidation behavior of Si NWs having two different diameters, 5 nm and 10 nm. We calculated the charge distribution according to the oxidation time for 5 and 10 nm Si NWs. Judging from this data, it was observed that the surface oxide layer started to form before it is fully oxidized, i.e., the active diffusion of oxygen in the surface oxide layer. However, it is well-known that the oxide layer formation on the Si NWs results in a compressive stress on the surface which may retard the oxygen diffusion. We focused on the stress evolution of Si NWs during the oxidation process. Since the surface oxidation results in the volume expansion of the outer shell, it shows a compressive stress along the oxide layer. Interestingly, the stress for the 10 nm Si NW exhibits larger compressive stress than that of 5 nm Si NW. The difference of stress level between 5 an 10 anm Si NWs is approximately 1 or 2 GPa. Consequently, the diameter of Si NWs could be a significant factor to determine the self-limiting oxidation behavior of Si NWs when the diameter was very small.

• 한국재료학회지
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• 제8권5호
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• pp.383-393
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• 1998

고효율 박막형 태양전지 제조를 위해 근접승화법에 의한 CdTe박막의 성장을 연구하였다. 내부압력의 변화, 기판과 소스 사이의 거리, 기판과 소스의 온도 등의 변수가 성장속도와 미세구조에 미치는 영향을 관찰했다. 내부압력의 변화에 따라 성장과정이 diffusion limited transport와 sublimation limited transport로 나뉘어지며, 이 두가지 성장방식의 분기점은 기체분자의 평균자유행정거리에 의해 결정되었다. 소스의 형태에 따라서 박막의 성장속도와 미세구조는 큰 차이를 보였으며, 실험을 통해 이러한 차이가 증발표면의 온도강하에 의한 현상임을 규명하였다. 기판과 소스사이의 간격에 따른 성장속도를 해석하기 위해 일방향열해석을 통해 기판과 소스표면의 온도를 계산하였다. X선 회절분석과 표면형상의 관찰을 통해 성장속도가 박막의 미세구조에 영향을 줌을 알았다. 기판의 온도가 증가하면서 박막성장시 (111)로의 우선성장방위가 관찰되었지만 고온이 되면서 다시 random orientation의 경향을 나타냈다.