• 제목/요약/키워드: Bulk diffusion

검색결과 186건 처리시간 0.042초

발전기 스테이터의 냉각코일에 pinhole 발생을 검지 할 수 있는 수소센서 개발 ($H_2$ sensor for detecting hydrogen in DI water using Pd membrane)

  • 최시영
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1999년도 추계학술대회 논문집 학회본부 A
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    • pp.442-445
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    • 1999
  • In this work, to detect of hydrogen in DI water in the generator area of nuclear power plants was fabricated Pd/Pt gate MISFET sensor using Pd membrane. $H_2$ permeation through Pd accounts for external mass transfer, surface adsorption and desorption, transitions to and from the bulk metal, and diffusion within the metal. The identification of pinholes in the generator area of plant is an important safety consideration, as hydrogen build-up gives rise to explosion. For this type of application the sensor needs to be isolated in DI water, accordingly, a Pd membrane was used to separate the DI water. The hydrogen in the DI water was then absorbed on the Pd thin film and diffused into the oil through the thin film. The Pd/Pt gate MISFET sensor, encapsulated by oil, will thereby detect permeated hydrogen.

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비정질 Zr-V-Ti 합금분말의 결정화에 따른 게터 특성 변화 (Changes of Getter properties by Crystallization of Amorphous Zr-V-Ti alloy Powders)

  • 박제신;김원백;백진선
    • 한국분말재료학회지
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    • 제14권1호
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    • pp.50-55
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    • 2007
  • The hydrogen sorption speeds of $Zr_{57}V_{36}Ti_7$ amorphous alloy and its crystallized alloys were evaluated at room temperature. $Zr_{57}V_{36}Ti_7$ amorphous alloy was prepared by ball milling. The hydrogen sorption rate of the partially crystallized alloy was higher than that of amorphous. The enhanced sorption rate of partially crystallized alloy was explained in terms of grain refinement that has been known to promote the diffusion into metallic bulk of the gases. The grain refinement could be obtained by crystallization of amorphous phase resulting in the observed increase in sorption property.

Enhanced Behaviors of Ionic-Polymer Metal Composite (IPMC) Actuator Coupled with Polymeric Anion-doped Polypyrrole Thin Film

  • Hong, Chan;Nam, Jae-Do;Tak, Yong-Sug
    • 전기화학회지
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    • 제9권4호
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    • pp.137-140
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    • 2006
  • In order to overcome the weak actuation and relaxation problems during the deformation of IPMC actuator, polymeric anion (polystyrenesulfonate)-doped polypyrrole(Ppy(PSS)) was electrodeposited onto IPMC actuator. Electrochemical quartz crystal microbalance study showed that hydrated cations were instilled into Ppy(PSS) film and polymeric-anion dopants introduced during polymerization were not expelled. Ppy(PSS)-coated IPMC actuator formed two electrode/electrolyte interfaces, Pt/nafion and Ppy(PSS)/bulk solution, and additive volume expansion phenomena at interfaces induced the large deformation compensating the relaxation of actuation by back diffusion of water.

Wetting properties between silver-copper-titanium braze alloy and hexagonal boron nitride

  • Sechi, Yoshihisa;Matsumoto, Taihei;Nakata, Kazuhiro
    • 대한용접접합학회:학술대회논문집
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    • 대한용접접합학회 2009년 추계학술발표대회
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    • pp.205-209
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    • 2009
  • Wetting properties between silver-copper-titanium braze alloys with different titanium contents up to 2.8 mass% and hexagonal boron nitride ceramics were investigated using sessile drop method at 1123K in Argon. The final contact angle is less than $30^{\circ}$ when the Ti content was over 0.41 mass%. Meanwhile, the contact angle curves show different behavior. In case of using braze alloy containing 2.8 mass% of titanium, the initial contact angle is acute angle just after the melting of braze. In case of brazes containing titanium less than 2.26 mass%, the contact angle is larger than $90^{\circ}$ at the beginning and slowly decreases to acute angle. The reaction layer of titanium nitride is observed at the interface. In addition, the reaction of Ti in the braze and N in the bulk h-BN seemed to show diffusion limited spreading.

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Oxygen Stoichiometry Modification by $O_2$-Plasma Treatment in $La_{0.7}Ca_{0.3}MnO_{3-\delta}$

  • Kim, H. S.;Lee, C. H.;Lee, Cheol-Eui;Y. H. Jeong;N. H. Hur
    • Journal of Magnetics
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    • 제5권3호
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    • pp.99-101
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    • 2000
  • Oxygen-plasma effects of single crystal and thin film samples of $La_{0.7}Ca_{0.3}MnO_{3-\delta}$ have been studied. Our resistivity measurements indicate that oxygen plasma treatment gives rise to oxygen diffusion into bulk regions, which results in a decrease of $Mn^{3+}$ concentration in oxygen nonstoichiometric $La_{0.7}Ca_{0.3}MnO_{3-\delta}$ and in the activation energies of Holstein's small polarons in the paramagnetic region.

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Origins of central Asian silk ikats

  • Hann, M.A.
    • 복식문화연구
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    • 제21권5호
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    • pp.780-791
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    • 2013
  • This paper is concerned with the development of the silk trade and in particular with silk-ikat production. Early origins are explained and issues relating to the development of long-distance trade are discussed. The principal trading participants are identified and the focus is turned to silk-ikat production in Central Asia. It is recognised that the vast bulk of trade, along what became known as the 'Silk Route' (or 'Silk Road'), did not involve straight-forward or direct exchange between powers to the far east of the route and powers to the far west, but rather was done in stages between adjacent or not too distant locations. Diffusion of ideas was not therefore immediate and operational at one eastern or western extreme of a trading network but, rather, was a gradual process influencing adjacent participants, at stages between the geographic extremes over a long period of time.

해석모델을 이용한 3차원 이온주입 시뮬레이터 개발 (Development of Three-Dimensional Ion Implantation Simulator Using Analytical Model)

  • 박화식;이준하;황호정
    • 전자공학회논문지A
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    • 제30A권12호
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    • pp.43-50
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    • 1993
  • Three-dimensional simulator for the ion implantation process is developed. The simulator based on an analytical model which would be a choice with high computational efficiency and accuracy. This is an important issue for the simulation of a numerous number of processing steps required in the fabrication of ULSI or GSI. The model can explain scattering and bulk channeling mechanism (1D). It can also explain depth dependent lateral diffusion effect(2D) and mask effect(3D). The model is consist of one-dimensional JPD(Joined Pearson Distribution) function and two-dimensional modified Gaussian functions. Final implanted profiles under typical mask structures such as hole, line and island structure are obtained with varying ion species.

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Oxygen Stoichiometry Modification by $O_{2}$-Plasma Treatment in $La_{0.7}$$Ca_{0.3}$Mn$O_{3-$\delta$}$

  • Kim, H. S.;Lee, C. H.;Lee, Cheol-Eui;Y. H. Jeong;N. H. Hur
    • 한국자기학회:학술대회 개요집
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    • 한국자기학회 2000년도 International Symposium on Magnetics The 2000 Fall Conference
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    • pp.268-272
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    • 2000
  • Oxygen-plasma effects of single crystal and thin film samples of L $a_{0.7}$C $a_{0.3}$Mn $O_{3-}$$\delta$/ have been studied. Our resistivity measurements indicate that oxygen plasma treatment gives rise to oxygen diffusion into bulk regions, which results in a decrease of M $n^{3+}$ concentration in oxygen nonstoichiometric L $a_{0.7}$C $a_{0.3}$Mn $O_{3-}$$\delta$/ and in the activation energies of Holstein's small polarons in the paramagnetic region.n.egion.n.n.

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SLS(Solid-Liquid-Solid) 성장기구에 의한 탄화규소 나노튜브의 성장 (Growth of SiC Nanotube by SLS (Solid-Liquid-Solid) Growth Mechanism)

  • 노대호;김재수;변동진;양재웅;김나리
    • 한국재료학회지
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    • 제14권2호
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    • pp.83-89
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    • 2004
  • SiC nanotubes were synthesized by SLS growth mechanism using various metal catalysts. Synthesized nanotubes had mean diameters of 20~50 nm and several $\mu\textrm{m}$ length. The kind of catalysts affected microstructures of SiC nanotubes by different diffusion routes. These differences are attributed to catalysts' physical properties and relative activities to the graphite substrate. Fe acted as a good catalyst of SLS growth mechanism. But in case of Ni, SiC nanotubes grew slowly. Optical property was measured by photoluminescence measurement. Relatively broad peak was obtained and mean peak positioned at about 430 nm. This result was the same as other nanocrystalline SiC materials, but was different from the results of bulk SiC probably due to quantum confinement effect and defect in the grown SiC nanotube.

$2{\mu}m$ CMOS P-WELL DOUBLE METAL TECHNOLOGY

  • 신철호;안경호;정은승;진주현
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1987년도 전기.전자공학 학술대회 논문집(I)
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    • pp.424-428
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    • 1987
  • A $2{\mu}m$ CMOS P-well double metal technology has been developed. Phosphorus deep implantation and drive-in diffusion steps were utilized to prevent the low voltage bulk punch through in the short channel, 1.6[${\mu}m$] Leff, PMOS device. Double metal process with the rules of 5[${\mu}m$] 1st metal pitch and 7[${\mu}m$] 2nd metal pitch was successfully implemented by using VLTO, low temperature oxide, as on intermetal dielectric.

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