• Korean Journal of Metals and Materials
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• v.47 no.8
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• pp.488-493
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• 2009

Direct syntheses of bulk $Ti_3Al$ via electro-discharge-sintering (EDS) of a stoichiometric elemental powder mixture were investigated. A capacitor bank of $450{\mu}F$ was charged with three input energies, 0.5, 1.0, and 1.5 kJ. The charged capacitor bank was then instantaneously discharged through 0.3 g of a Ti-25.0 at.%Al powder mixture for consolidation. Complete phase transformation occurred in less than $200{\mu}sec$ by the discharge and a bulk $Ti_3Al$ compact was obtained. Compared with consolidated samples fabricated by conventional methods such as high vacuum sintering and casting, the electro-discharge-sintered $Ti_3Al$ compact shows a very fine microstructure with a hardness value of 425 Hv. Electro-discharge-sintering under a $N_2$ atmosphere successfully modified the surface Ti oxide of the $Ti_3Al$ compact into Ti nitride, which concurred with the synthesis and consolidation of $Ti_3Al$. Complete conversion yielding a single phase $Ti_3Al$ is primarily dominated by the fast solid state diffusion reaction.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 1999.04a
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• pp.5-5
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• 1999

The Principal deficiency of the existing notion about the sintering-mixtures consists in the fact that almost no attention is focused on the Phenomenon of alloy formation during sintering, its connection with dimensional changes of powder bodies, and no correct ideas on the driving force for the sintering process in the stage of establishing chemical equilibrium in a system are available as well. Another disadvantage of the classical sintering theory is an erroneous conception on the dissolution mechanism of solid in liquid. The two-particle model widely used in the literature to describe the sintering phenomenon in solid state disregards the nature of the neighbouring surrounding particles, the presence of pores between them, and the rise of so called arch effect. In this presentation, new basic scientific principles of the driving forces for the sintering process of a two-component powder body, of a diffusion mechanism of the interaction between solid and liquid phases, of stresses and deformation arising in the diffusion zone have been developed. The major driving force for sintering the mixture from components capable of forming solid solutions and intermetallic compounds is attributed to the alloy formation rather than the reduction of the free surface area until the chemical equilibrium is achieved in a system. The lecture considers a multiparticle model of the mixed powder-body and the nature of its volume changes during solid-state and liquid-phase sintering. It explains the discovered S-and V-type concentration dependencies of the change in the compact volume during solid-state sintering. It is supposed in the literature that the dissolution of solid in liquid is realised due to the removal of atoms from the surface of the solid phase into the melt and then their diffusicn transfer from the solid-liquid interface into the bulk of liquid. It has been shown in our experimental studies that the mechanism of the interaction between two components, one of them being liquid, consist in diffusion of the solvent atoms from the liquid into the solid phase until the concentration of solid solutions or an intermetallic compound in the surface layer enables them to pass into the liquid by means of melting. The lecture discusses peculimities of liquid phase formation in systems with intermediate compounds and the role of the liquid phase in bringing about the exothermic effect. At the frist stage of liquid phase sintering the diffusion of atoms from the melt into the solid causes the powder body to grow. At the second stage the diminution of particles in size as a result of their dissolution in the liquid draws their centres closer to each other and makes the compact to shrink Analytical equations were derived to describe quantitatively the porosity and volume changes of compacts as a result of alloy formation during liquid phase sinteIing. Selection criteria for an additive, its concentration and the temperature regime of sintering to control the density the structure of sintered alloys are given.

• The Korean Journal of Pharmacology
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• v.29 no.1
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• pp.149-156
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• 1993

Intramolecular excimerization of 1,3-di(1-pyrenyl)propane (Py-3-Py) and fluorescence polarization of 1,6-diphenyl-1,3,5-hexatriene (DPH) were used to examine the effects of ethanol on the rate and range of lateral diffusion of bulk bilayer structures of plasma membrane vesicles isolated from cultured mouse myeloma cell line Sp2/0-Ag14 (Sp2/0-PMV). In a concentration-dependent manner, ethanol increased the excimer to monomer fluorescence intensity ratio (I'/I) of Py-3-Py in the Sp2/0-PMV and decreased the anisotropy (r), limiting anisotropy $(r_{\infty})$, and order parameter (S) of DPH in the Sp2/0-PMV. This indicates that ethanol increased both the lateral and rotational diffusion of the probes in the Sp2/0-PMV. Selective quenching of DPH by trinitrophenyl groups was utilized to examine the transbilayer asymmetric rotational diffusion of the Sp2/0-PMV. The anisotropy (r), limiting anisotropy $(r_{\infty})$, and order parameter (S) of DPH in the inner monolayer were 0.022, 0.029, and 0.063, respectively, greater than calculated for the outer monolayer of the Sp2/0-PMV. Selective quenching of DPH by trinitrophenyl groups was also utilized to examine the transbilayer asymmetric effects of ethanol on the range of rotational diffusion of the Sp2/0-PMV. Ethanol had a greater fluidizing effect on the outer monolayer as compared to the inner monolayer of the Sp2/0-PMV. It has been proven that ethanol exhibits a selective rather than nonselective fluidizing effect within transbilayer domains of the Sp2/0-PMV.

• Journal of the Korean Institute of Telematics and Electronics
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• v.26 no.6
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• pp.38-47
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• 1989

A purely analytical model for HEMT's based on a two dimensional charge control simul-ation[4] is proposed. In this model proper treatment of diffusion effect of electron transport along a 2-DEG (two dimensional electron gas) channel is perfoemed. This diffusion effect is shown to effectively increase the bulk mibility and threshold voltage of the I-V curves compared to the existing models. The channel thickness and gate capacitance are expressed as functions of gate voltages covering subthreshold characteristics of HEMT's analytically. By introducing the finite channel opening and an effiective channel-length modulation, the solpe of the saturation region of the I-V curves ws modeled. The smooth transition of the I-V curves at linear-to-saturation regions of the I-V curves was possible using the continuous Troffimenkoff-type of field dependent mobility. Furthermore, a correction factor f was introduced to account for the finite transition section forming between a GCA and a saturated section. This factor removes large discrepancies in the saturation region of the I-V curve predicted by existing l-dimensional models.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.4
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• pp.48-56
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• 1999

In this paper, we have investigated experimentally the effects of initial oxygen concentration on oxygen pileup phenomenon and the diffusion of implanted impurities. 1.2 MeV $^{11}B^{+}$ and 2.2 MeV $^{31}P^{+}$ ions were implanted into p-type (100) Si wafers with a dose of 1${\times}10^{15}$ / $\textrm{cm}^2$. Secondary ion mass spectrometry(SIMS) measurements were carried out to obtain depth distribution profiles for implanted impurities and oxygen atoms after two-step annealing of $700^{\circ}C$(20 hours)+$1000^{\circ}C$(10 hours). Residual secondary defect distribution and annealing behabiour were also studied by cross-sectional transmission electron microscopy(TEM) observations. Oxygen pileup nearly $R_p$(projected range) were observed by SIMS measurements and considerable amount of residual secondary defect layer were observed by TEM observations. It can be seen that oxygen atoms are trapped at the secondary defects by the experimental results. Enhanced diffusions of boron and phosphorus to the bulk direction were observed with the increasing of initial oxygen concentration.

• Journal of Electrochemical Science and Technology
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• v.9 no.3
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• pp.163-168
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• 2018

Biomass waste-derived carbon is an attractive alternative with environmental benignity to obtain carbon material. In this study, we prepare carbon from coffee grounds as a biomass precursor using a simple, inexpensive, and environmentally friendly method through physical activation using only steam. The coffee-derived carbon, having a micropore-rich structure and a low extent of graphitization of disordered carbon, is developed and directly applied to lithium-ion battery anode material. Compared with the introduction of the Ketjenblack (KB) conducting agent (i.e., coffee-derived carbon with KB), the coffee-derived carbon itself achieves a reversible capacity of ~200 mAh/g (0.54 lithium per 6 carbons) at a current density of 100 mA/g after 100 cycles, along with excellent cycle stability. The origin of highly reversible lithium storage is attributed to the consistent diffusion-controlled intercalation/de-intercalation reaction in cycle life, which suggests that the bulk diffusion of lithium is favorable in the coffee-derived carbon itself, in the absence of a conducting agent. This study presents the preparation of carbon material through physical activation without the use of chemical activation agents and demonstrates an application of coffee-derived carbon in energy storage devices.

• Journal of the Korean Vacuum Society
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• v.12 no.3
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• pp.174-181
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• 2003

Ta diffusion barriers have been deposited on Si (100) substrate by applying a negative substrate bias voltage. The effect of the substrate bias voltage on the properties of the Ta films was investigated. In the case of the Ta films deposited without the substrate bias voltage, a columnar structure and small grains were observed distinctly, and the electrical resistivity of the deposited Ta films was very high (250 $\mu\Omega$cm). By applying the substrate bias voltage, no clear columnar structure and grain boundary were observed. The resistivity of the Ta films decreased remarkably and at a bias voltage of -125 V, reaching a minimum value of 40 $\mu\Omega$cm, which is close to that of Ta bulk (13 $\mu\Omega$cm). The thermal stability of Cu(100 mm)/Ta(50 mm)/Si structures was evaluated after annealing in H2 atmosphere for 60 min at various temperatures. The Ta films deposited by applying the substrate bias voltage were found to be stable up to $600^{\circ}C$, while the Ta films deposited without the substrate bias voltage degraded at $400^{\circ}C$.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.286-287
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• 2012

Reset-first resistive switching mechanism based on reduction reaction in HfO2-x with oxygen drift-diffusion was studied. we first report that the indirect evidence of local filamentary conductive path formation in bulk HfO2 film with local TiOx region at Ti top electrode formed during forming process and presence of anion-migration at interface between electrode and HfO2 during resistive switching through high resolution transmission electron microscopy (HRTEM), electron disperse x-ray (EDX), and electron energy loss spectroscopy (EELS) mapping. Based on forming process mechanism, we expected that redox reaction from Ti/HfO2 to TiOx/HfO2-x was responsible for an increase of initial current with increasing the post-annealing process. First-reset resistive switching in above $350^{\circ}C$ annealed Ti/HfO2 film was exhibited and the redox phenomenon from Ti/HfO2 to TiOx/HfO2-x was observed with high angle annular dark field (HAADF) - scanning transmission electron microscopy (STEM), EDX and x-ray photoelectron spectroscopy. Therefore, we demonstrated that the migration of oxygen ions at interface region under external electrical bias contributed to bipolar resistive switching behavior.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.499-499
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• 2011

Silicon nanowires (Si NWs) have been extensively studied for nanoelectronics owing to their unique optical and electrical properties different from those of bulk silicon. For the development of Si NW devices, better understanding of oxidation behavior in Si NWs would be an important issue. For example, it is widely known that atomic scale roughness at the dielectric (SiOx)/channel (Si) interface can significantly affect the device performance in the nano-scale devices. However, the oxidation process at the atomic-scale is still unknown because of its complexity. In the present work, we investigated the oxidation behavior of Si NW in atomic scale by simulating the dry oxidation process using a reactive molecular dynamics simulation technique. We focused on the residual stress evolution during oxidation to understand the stress effect on oxidation behavior of Si NWs having two different diameters, 5 nm and 10 nm. We calculated the charge distribution according to the oxidation time for 5 and 10 nm Si NWs. Judging from this data, it was observed that the surface oxide layer started to form before it is fully oxidized, i.e., the active diffusion of oxygen in the surface oxide layer. However, it is well-known that the oxide layer formation on the Si NWs results in a compressive stress on the surface which may retard the oxygen diffusion. We focused on the stress evolution of Si NWs during the oxidation process. Since the surface oxidation results in the volume expansion of the outer shell, it shows a compressive stress along the oxide layer. Interestingly, the stress for the 10 nm Si NW exhibits larger compressive stress than that of 5 nm Si NW. The difference of stress level between 5 an 10 anm Si NWs is approximately 1 or 2 GPa. Consequently, the diameter of Si NWs could be a significant factor to determine the self-limiting oxidation behavior of Si NWs when the diameter was very small.

• Korean Journal of Materials Research
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• v.8 no.5
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• pp.383-393
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• 1998

Cadmium telluride films were grown by close-spaced sublimation(CSS) technique. The effects of various deposition parameters such as ambient pressure, source- to-substrate spacings and temperatures on the growth rate and the microstructure were investigated. The growth mode of CdTe films showed a transition as the ambient pressure changed. This transition was interpreted in terms of the diffusion limited transport and the sublimation limited transport of Cd and $Te_2$ vapors. Experimental results indicated that the transition of growth mode was related with the mean free path of gas molecules. The growth rate and the microstructure of CdTe films were affected by the source type- bulk or powder. This change was due to the temperature difference at the source surface. XRD and SEM analysis showed that the growth rate was one of the main factors to determine CdTe microstructures.