• 제목/요약/키워드: Breakdown lifetime

검색결과 70건 처리시간 0.022초

Evaluation of Material Characteristics of Suspension-Type Porcelain Insulators for 154 KV Power Transmission Lines

  • Choi, In-Hyuk;Park, Joon-Young;Kim, Tae-gyun;Yoon, Yong-Beum;Yi, Junsin
    • Transactions on Electrical and Electronic Materials
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    • 제18권4호
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    • pp.207-210
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    • 2017
  • The suspension arrangement of insulators provides flexibility and assists in power transmission in transmission lines. The performance of the insulator string is strongly influenced by the environmental conditions to which it is exposed, its shape and the inherent material properties of suspension-type insulators. The suspension-type insulators are mostly made from glass, porcelain and ceramic material due to their high resistivity. Irregularity in charge distribution throughout the porcelain insulator may lead to accelerated aging and electrical breakdown. A very high and steep lightning impulse voltage may also cause breakdown of suspension-type insulators. We investigated various material characteristics such as alumina addition, surface morphology, x-ray diffraction pattern and relative density of suspension porcelain insulators manufactured in 1989 (36,000 lbs.), 1995 (36,000 lbs.) and 2001 (36,000 lbs.) by the KRI Company for use in 154 kV high power transmission lines. We compared the material characteristics of these porcelain insulators with that of the top-of-the-line porcelain insulators (36,000 lbs.) manufactured by the NGK Company in 2000. These suspension-type porcelain insulators were exposed to arc and flashover tests to examine their electrical and mechanical strength. It was noted that alumina addition (17 wt.%) for K-2001 was one of the major contributors to the enhancement of the performance of the porcelain insulators and to their ability to withstand very high current generation during the arc test. The porcelain insulators manufactured during 2001 also showed the highest relative density of 95.8% as compared to the other insulators manufactured in 1989 and 1995 respectively 94.2% and 91.5%. We also discuss reports of various failure modes of suspension-type porcelain insulators.

급속열질화에 의한 고압산화법으로 성장된 얇은 산화막의 특성개선 (Improvement of thin oxide grown by high pressure oxidation using rapid thermal nitridation)

  • 노태문;이대우;송윤호;백규하;구진근;이덕동;남기수
    • 전자공학회논문지D
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    • 제34D권8호
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    • pp.26-34
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    • 1997
  • To develop ultrathin gate oxide for ULSI MOSFETs, for the first time, we fabricated MOS capacitors with 65.angs. thick initial oxide grown by high pressure oxidation (HIPOX) at 700.deg. C in 5 atmosphere $O_{2}$ ambient and then followed by rapid thermal nitridation (RTN) in N$_{2}$O ambient. The dielectric breakdown fields of the initial HIPOX oxide are 13.0 MV/cm and 13.8MV/cm for negative and positive gate bias, respectively and are dependent on nitridation temeprature and time.The lifetimes of the HIPOX oxides extractd by TDDB method are 1.1*10$^{8}$ sec and 3.4 * 10$^{9}$ sec for negative and positive stress current, respectively. The lifetime of the HIPOX oxide dfor negative stress current increases with nitridation time in N$_{2}$O ambient at 1100.deg.C, reaching maximum value stress curretn increases with nitridation time in N$_{2}$O ambient at 1100.deg. C reacing maximum value of 1.2*10$^{9}$ sec for 30 sec of nitridation time, and then subsequently decreases at the longer nitridation time. The lifetimes of the nitrided-HIPOX oxides are longer than 10 years when nitridations are carried out longer than about 50 sec and 12 sec at 1000.deg. C, and 1100.deg. C, respectively.

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MOD 법으로 제조한 강유전성 SBT 박막에서 하부전극이 유전 및 전기적 특성에 미치는 영향 (Effects of Bottom Electrode to Dielectric and Electrical Properties of MOD Derived Ferroelectric SBT Thin Films)

  • 김태훈;송석표;김병호
    • 한국전기전자재료학회논문지
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    • 제13권8호
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    • pp.694-699
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    • 2000
  • S $r_{0.9}$/B $i_{2.1}$/T $a_{2}$/ $O_{9}$ solutions was synthesized by MOD (metalorganic decomposition) method. SBT thin films with 2000$\AA$ thickness were prepared on Ir $O_2$/ $SiO_2$/Si and Pt/Ti/ $SiO_2$/Si substrates using the spin coating process and then investigated the dielectric and electrical properties of them. In the case of using Ir $O_2$bottom electrode the hysteresis loop was saturated at lower temperature than Pt/Ti electrode but the breakdown phenomenon was occurred at low voltage because of the rough surface morphology and porous microstructure of SBT thin films. As the results of the fatigue and imprint characteristics related to the lifetime and reliability of devices after 10$^{10}$ cycles the fatigue rates were about 10% at the Ir $O_2$and Pt/Ti bottom electrodes. Both SBT thin films with Ir $O_2$ and with Pt/Ti bottom electrodes show a slight tendency to imprint after 10$^{9}$ cycles but do not lead to a failure.e.e.

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PCB에서의 ECM 특성에 미치는 SnPb 솔더 합금의 분극거동의 영향 (Influence of Polarization Behaviors on the ECM Characteristics of SnPb Solder Alloys in PCB)

  • 이신복;유영란;정자영;박영배;김영식;주영창
    • 마이크로전자및패키징학회지
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    • 제12권2호
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    • pp.167-174
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    • 2005
  • 전자 부품의 크기가 점점 줄어들고 고집적화됨에 따라 전자 패키지 내부에 사용되는 금속간 간격이 줄어들고 있다. 이에 더하여 고온 고습한 환경에서 금속간에 전압이 인가되면 금속의 이온화가 촉진, 금속으로 이루어진 필라멘트가 형성되어 결국 절연파괴에 이르게 된다. 이러한 현상이 electrochemical migration(ECM)이다. 이에 인쇄회로기판을 사용하여 ECM 특성 평가를 수행하였다. 항온/항습조건($85^{\circ}C,\;85{\%}RH$)에서 PCB의 $300 {\mu}m$의 단자간격을 가진 through-hole via 표면에서 발생하는 ECM 현상은 CAF가 절연파괴의 주된 메커니즘이었다. solder를 구성하는 Sn과 Pb 조성 분석을 통해 Pb 의 이온 이동도가 Sn의 이온 이동도보다 큰 것을 알 수 있었으며 이는 급격한 양극용해 거동을 보이는 pure Pb의 분극거동과 상관관계가 있는 것으로 사료된다. 또한 시간에 따른 절연파괴시간 시험을 통하여 ECM에 의한 절연파괴시간이 인가전압에 의존하며 인가전압 의존성 지수값(n)은 2로 나타났다.

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TSV 구리 필링 공정에서 JGB의 농도와 전류밀도의 상관 관계에 관한 연구 (Study on the Relationship between Concentration of JGB and Current Density in TSV Copper filling)

  • 장세현;최광성;이재호
    • 마이크로전자및패키징학회지
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    • 제22권4호
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    • pp.99-104
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    • 2015
  • 비아 필링에 있어서 void나 seam 생성이 없이 비아를 채우는 것은 매우 중요한 사항으로 전류밀도, 전류모드, 첨가제 등을 변화시켜 결함없는 비아를 얻어왔다. 그러나 다양한 첨가제의 부산물이 오염의 원인이 되며 도금액의 수명을 줄이는 문제점이 있었다. 본 연구에서는 오염을 최소화하기 위하여 다른 첨가제가 없이 JGB만을 사용하여 JGB 농도와 전류밀도 변화에 따른 비아 필링 현상을 연구하였다. 지름이 $15{\mu}m$이며 종횡비 4인 비아가 사용되었으며 펄스전류를 이용하여 도금을 하였다. 전류밀도는 $10{\sim}20mA/cm^2$, JGB 농도는 0~25 ppm까지 변화시키면서 JGB 농도와 전류밀도와 의 상관관계를 mapping 하였다. 그로부터 지름이 $15{\mu}m$이며 종횡비 4인 비아 필링의 최적 조건을 확립하였다.

스트레스전압 극성에 따른 얇은 산화막의 TDDB 특성 (The TDDB Characteristics of Thin $SiO_2$ with Stress Voltage Polarity)

  • 김천수;이경수;남기수;이진효
    • 대한전자공학회논문지
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    • 제26권5호
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    • pp.52-59
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    • 1989
  • 얇은 산화막의 신뢰성을 정전류 스트레스 방법으로 조사하였다. 실험에 사용된 소자는 산화막 두께가 20~25nm인 다결정실리콘 MOS 커패시터 이었다. VLSI 신뢰성 평가에 필수적인 자동측정 및 통계적 데이타분석을 HP9000 컴퓨터를 이용하여 수행하였다.측정한 TDDB 결과로부터 산화막의 결합밀도, 절연파괴 전하량(Qbd), 수명등을 측정한 결과 스트레스를 가하는 극성에 따라서 다른 특성이 나타났다. 결함밀도는 (-) 게이트 주입의 경우에 62개$cm^2$ 이었다. 절연파괴 전하량은 (+) 게이트 주입의 경우 30C/$cm^2$이었고, (-)게이트 주입의 경우가 1.43$cm^2$/A 이었고, (+)게이트 주입의 경우가 1.25$cm^2$/A이었다.

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Effects of Electrostatic Discharge Stress on Current-Voltage and Reverse Recovery Time of Fast Power Diode

  • Bouangeune, Daoheung;Choi, Sang-Sik;Cho, Deok-Ho;Shim, Kyu-Hwan;Chang, Sung-Yong;Leem, See-Jong;Choi, Chel-Jong
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제14권4호
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    • pp.495-502
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    • 2014
  • Fast recovery diodes (FRDs) were developed using the $p^{{+}{+}}/n^-/n^{{+}{+}}$ epitaxial layers grown by low temperature epitaxy technology. We investigated the effect of electrostatic discharge (ESD) stresses on their electrical and switching properties using current-voltage (I-V) and reverse recovery time analyses. The FRDs presented a high breakdown voltage, >450 V, and a low reverse leakage current, < $10^{-9}$ A. From the temperature dependence of thermal activation energy, the reverse leakage current was dominated by thermal generation-recombination and diffusion, respectively, at low and high temperature regions. By virtue of the abrupt junction and the Pt drive-in for the controlling of carrier lifetime, the soft reverse recovery behavior could be obtained along with a well-controlled reverse recovery time of 21.12 ns. The FRDs exhibited excellent ESD robustness with negligible degradations in the I-V and the reverse recovery characteristics up to ${\pm}5.5$ kV of HBM and ${\pm}3.5$ kV of IEC61000-4-2 shocks. Likewise, transmission line pulse (TLP) analysis reveals that the FRDs can handle the maximum peak pulse current, $I_{pp,max}$, up to 30 A in the forward mode and down to - 24 A in the reverse mode. The robust ESD property can improve the long term reliability of various power applications such as automobile and switching mode power supply.

목표 신뢰도를 고려한 원-샷 시스템의 최적검사정책 (Optimal Inspection Policy for One-Shot Systems Considering Reliability Goal)

  • 정승우;정영배
    • 산업경영시스템학회지
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    • 제40권4호
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    • pp.96-104
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    • 2017
  • A one-shot system (device) refers to a system that is stored for a long period of time and is then disposed of after a single mission because it is accompanied by a chemical reaction or physical destruction when it operates, such as shells, munitions in a defense weapon system and automobile airbags. Because these systems are primarily related with safety and life, it is required to maintain a high level of storage reliability. Storage reliability is the probability that the system will operate at a particular point in time after storage. Since the stored one-shot system can be confirmed only through inspection, periodic inspection and maintenance should be performed to maintain a high level of storage reliability. Since the one-shot system is characterized by a large loss in the event of a failure, it is necessary to determine an appropriate inspection period to maintain the storage reliability above the reliability goal. In this study, we propose an optimal inspection policy that minimizes the total cost while exceeding the reliability goal that the storage reliability is set in advance for the one-shot system in which periodic inspections are performed. We assume that the failure time is the Weibull distribution. And the cost model is presented considering the existing storage reliability model by Martinez and Kim et al. The cost components to be included in the cost model are the cost of inspection $c_1$, the cost of loss per unit time between failure and detection $c_2$, the cost of minimum repair of the detected breakdown of units $c_3$, and the overhaul cost $c_4$ of $R_s{\leq}R_g$. And in this paper, we will determine the optimal inspection policy to find the inspection period and number of tests that minimize the expected cost per unit time from the finite lifetime to the overhaul. Compare them through numerical examples.

TSV 필링 공정에서 평활제가 구리 비아필링에 미치는 영향 연구 (The Effects of Levelers on Electrodeposition of Copper in TSV Filling)

  • 정명원;김기태;구연수;이재호
    • 마이크로전자및패키징학회지
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    • 제19권2호
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    • pp.55-59
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    • 2012
  • TSV 비아필링 과정이 진행되는 동안 내부에 void나 seam과 같은 결함이 빈번하게 발견되고 있다. 결함 없는 구리 비아필링을 위해서는 용액 내에 가속제, 억제제, 평활제 등의 유기물 첨가제가 필요하다. 공정과정중 유기물 첨가제의 분해로 인한 부산물로부터 기인한 오염은 디바이스의 신뢰도나 용액의 수명을 감소시키는 요인이 된다. 본 연구에서는 첨가제의 사용량을 줄이기 위하여 가속제와 억제제를 사용하지 않고 평활제만을 이용한 구리 비아필링에 관한 연구를 진행하였다. 세가지 종류의 첨가제(janus green B, methylene violet, diazine black)를 이용한 구리 전착에 관한 연구를 수행하였다. 각각의 첨가제에 따른 전기화학적 거동을 분석한 결과 도금속도적 측면에서 차이를 나타내는 것을 확인할 수 있었다. 비아필링 진행 후 단면을 분석하여 각각의 평활제가 비아필링에 미치는 영향을 확인하였으며, 그 특성은 다르게 나타나는 것을 확인할 수 있었다.

가상대학 구현에 관한 연구 (A study on the developing and implementation of the Cyber University)

  • 최성;유갑상
    • 기술경영경제학회:학술대회논문집
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    • 기술경영경제학회 1998년도 제13회 하계학술발표회 논문집
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    • pp.116-127
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    • 1998
  • The Necessity of Cyber University. Within the rapidly changing environment of global economics, the environment of higher education in the universities, also, has been, encountering various changes. Popularization on higher education related to 1lifetime education system, putting emphasis on the productivity of education services and the acquisition of competitiveness through the market of open education, the breakdown of the ivory tower and the Multiversitization of universities, importance of obtaining information in the universities, and cooperation between domestic and oversea universities, industry and educational system must be acquired. Therefore, in order to adequately cope wi th these kinds of rapid changes in the education environment, operating Cyber University by utilizing various information technologies and its fixations such as Internet, E-mail, CD-ROMs, Interact ive Video Networks (Video Conferencing, Video on Demand), TV, Cable etc., which has no time or location limitation, is needed. Using informal ion and telecommunication technologies, especially the Internet is expected to Or ing about many changes in the social, economics and educational area. Among the many changes scholars have predicted, the development and fixations of Distant Learning or Cyber University was the most dominant factor. In the case of U. S. A., Cyber University has already been established and in under operation by the Federate Governments of 13 states. Any other universities (around 500 universities has been opened until1 now), with the help of the government and private citizens have been able to partly operate the Cyber University and is planning on enlarging step-by-step in the future. It could be seen not only as U. S. A. trying to elevate its higher education through their leading information technologies, but also could be seen as their objective in putting efforts on subordinating the culture of the education worldwide. UTRA University in U. S. A., for example, is already exporting its class lectures to China, and Indonesia regions. Influenced by the Cyber University current in the U.S., the Universities in Korea is willing .to arrange various forms of Cyber Universities. In line with this, at JUNAM National University, internet based Cyber University, which has set about its work on July of 1997, is in the state of operating about 100 Cyber Universities. Also, in the case of Hanam University, the Distant Learning classes are at its final stage of being established; this is a link in the rapid speed project of setting an example by the Korean Government. In addition, the department of education has selected 5 universities, including Seoul Cyber Design University for experimentation and is in the stage of strategic operation. Over 100 universities in Korea are speeding up its preparation for operating Cyber University. This form of Distant Learning goes beyond the walls of universities and is in the trend of being diffused in business areas or in various training programs of financial organizations and more. Here, in the hope that this material would some what be of help to other Universities which are preparing for Cyber University, I would 1ike to introduce some general concepts of the components forming Cyber University and Open Education System which has been established by JUNAM University. System of Cyber University could be seen as a general solution offered by tile computer technologies for the management on the students, Lectures On Demand, real hour based and satellite classes, media product ion lab for the production of the multimedia Contents, electronic library, the Groupware enabling exchange of information between students and professors. Arranging general concepts of components in the aspect of Cyber University and Open Education, it would be expressed in the form of the establishment of Cyber University and the service of Open Education as can be seen in the diagram below.

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