• Proceedings of the KIEE Conference
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• 1998.11c
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• pp.916-918
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• 1998

Degradation diagnosis of XLPE insulated URD cables was accomplished through out new method which was to be analyzed by non-electrical experiments and synthesized by degradation points. To supplement this method, It was also carried out using several electrical analyses PD-q increased generally in proportion to the applied voltage and showed no uniform patterns in relation to the thickness of insulator. Leakage current was unequal according to the thickness of insulator and its range was from 20[nA] to 50[nA]. $Tan{\delta}$ had commonly a different tendency by means of temperature and frequency and also appeared higher at the outer part rather than inner part of insulator. Breakdown voltages were measured and breakdown lifetimes were predicted appling for Weibull distribution function. As a result, breakdown lifetime in failure cables was longer up to three times as much as general cables.

• Progress in Superconductivity and Cryogenics
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• v.15 no.4
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• pp.10-14
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• 2013

We have clearly investigated with respect to the survival of the insulator at cryogenic temperature under the electrical stress. The breakdown and voltage-time characteristics of turn-to-turn models for point contact geometry and surface contact geometry using copper multi wrapped with polyimide film for an HTS transformer were investigated under AC and impulse voltage at 77 K. Polyimide film (Kapton) 0.025 mm thick is used for multi wrapping of the electrode. As expected, the breakdown voltages for the surface contact geometry are lower than that of the point contact geometry, because the contact area of the surface contact geometry is lager than that of the point contact geometry. The time to breakdown t50 decreases as the applied voltage is increased, and the lifetime indices increase slightly as the number of layers is increased. The electric field amplitude at the position where breakdown occurs is about 80 % of the maximum electric field value. The relationship between survival probability and the electrical stress at cryogenic temperature was evident.

• Progress in Superconductivity and Cryogenics
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• v.7 no.2
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• pp.21-26
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• 2005

Breakdown characteristics and survival probability of turn-to-turn models were investigated under ac and impulse voltage at 77K. For experiments, two test electrode models were fabricated: One is point contact model and the other is surface contact model. Both are made of copper wrapped by O.025mm thick polyimide film(Kapton). The experimental results were analyzed statistically using Weibull distribution in order to examine the wrapping number effects on voltage-time characteristics under ac voltage as well as under impulse voltage in LN$_{2}$. Also survival analysis were performed according to the Kaplan-Meier method. The breakdown voltages of surface contact model are lower than that of point contact model, because the contact area of surface contact model is wider than that of point contact model. Besides, the shape parameter of point contact model is a little bit larger than that of surface contact model. The time to breakdown t$_{50}$ is decreased as the applied voltage is increased, and the lifetime indices slightly are increased as the number of layers is increased. According to the increasing applied voltage and decreasing wrapping number, the survival probability is increased.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.16 no.1
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• pp.106-113
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• 2002

In this paper, breakdown characteristics of pure Kr, Ar and $N_2$gas with gas pressure range were investigated, and the measured values were compared with those in Ar/$N_2$and Kr/$N_2$gas mixtures with pressure varying. Also, various characteristics with gas mixtures in practical incandescent lamps were investigated. Summarizing the experimental results, the breakdown voltages of $N_2$gas were increased than those of Kr and Ar gas with large molecular weight, and the breakdown voltage increased with gas pressure increasing. The breakdown voltages of Ar/$N_2$and Ar/$N_2$gas mixtures were decreased with decreasing the mixtures ratio of $N_2$gas, and corona inception voltage of Kr/$N_2$gas mixtures under non-uniform fields were increased than those of Ar/$N_2$gas mixtures. In case of tactical incandescent lamps, luminous and lifetime of Kr(70%)/$N_2$(30%) gas mixtures were increased about 94[lm] and 380[hr] than those of Ar(70%)/$N_2$(30%) gas mixtures. and injection pressure of gas mixtures with cooling temperature of 20[$^{\circ}C$] in incandescent lamps were increased about 13[%] than those with cooling temperature of 40[$^{\circ}C$].

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1947-1949
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• 1999

Carrier lifetime in silicon power devices caused switching delay and excessive power loss at high frequency switching. We studied transient turn-on/turn-off transient characteristics of electron irradiated and proton irradiated silicon pn junction diodes. Both the electron and proton irradiation of power devices have already become a widely used practice to reduce minority carrier lifetime locally[1]. The sample is n+p junction diode, made by ion implantation on a $20\Omega.cm$ p-type wafer. We investigated turn-on/turn-off transient & breakdown voltage characteristics by digital oscilloscope. Our data show that proton irradiated samples show better performance than electron irradiated samples.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.243-246
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• 2001

Thyristor devices have 3-dimensional complicated structure and were sensitive to temperature characteristics. Therefore, it was difficult to optimize thyristor devices design. We have to consider many design parameter to characterize, and trade-off relations. The important parameters to design thyristor devices are cathode structure, effective line width, cathode-emitter shunt structure, gate structure, doping profile and carrier lifetime. So, we must consider that these design parameters were not acted separately. However, there are many difficulties to determine optimized design parameters by experiment. So, We used specific design software to design thyristor devices, and estimated the thyristor devices characteristics.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.10
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• pp.641-646
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• 2016

Coil specimen was prepared by coating a copper wire with two varnish thin layers: the first was polyamideimide (PAI)/nanosilica (5 wt%) varnish and the second was anti-corona PAI/nanosilica (15 wt%) varnish. Insulation breakdown voltage was investigated under inverter surge condition at $20^{\circ}C$, $70^{\circ}C$, $100^{\circ}C$, $150^{\circ}C$, $200^{\circ}C$, $250^{\circ}C$, respectively. The insulation lifetime of the two layered coil was tens of times longer than that of original PAI coil. And the insulation lifetime decreased with increasing ambient temperature because there was weak binding strength between copper and varnish layer.

• Proceedings of the KIEE Conference
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• 2000.11c
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• pp.485-487
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• 2000

Dielectric strength of insulators made of epoxy composites rapidly decreases due to ageing to interfaces between the matrix resin and filler particles. The adhesion variation of interfaces caused by moisture absorption also alters electrical properties that are the basic characteristics of insulators, particularly, in out door use. In this paper, electrical properties of epoxy/$SiO_2$ composites were investigated at boiling absorption condition to observe that influence of moisture. The breakdown time of samples were measured under AC 6[kV] applied voltage, and the variation of lifetime was varified by using Weibull distribution function.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.22-23
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• 2006

Proton irradiation technology was used for improvement of switching characteristics of the PT-IGBT. Proton irradiation was carried out at 5.56 MeV energy with $1{\times}10^{12}/cm^2$ doze from the back side of the wafer. Characterization of the device was performed by I-V, breakdown voltage, threshold voltage, and turn-off delay time measurement. For irradiated device by 5.56 MeV energy, the breakdown voltage and the threshold voltage were 730 V and 6.5~6.6 V, respectively. The turn-off time has been reduced to 170 ns, which was original $6\;{\mu}s$ for the un-irradiated device.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.68 no.1
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• pp.52-60
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• 2019

In this paper, four types of insulation coils were fabricated by adding various kinds of glycols to improve the flexibility and adhesion of insulating coils in varnish dispersed with PAI / Nano Silica_15wt%. The applied voltage and frequency were 1.5 kV / 20 kHz for accelerated life evaluation. Through the 6th temperature stress level, the cause of the insulation breakdown of the coil was ignored and only the breakdown time was measured. The Arrhenius model was chosen based on the theoretical relationship between chemical reaction rate and temperature for estimating the insulation life of the coil due to accelerated thermal stress. Three types of distributions (Weibull, Lognormal, Exponential) were selected as the relationship between thermal stress model and distribution. The average insulation lifetime was estimated under the temperature stress of four types of insulation coils through the relationship between one kind of model and three kinds of distributions.