• Title/Summary/Keyword: Breakdown Structure

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A Study on the Characteristics of ELB Insulating Material deteriorated by Salt water (염수에 의해 열화된 누전차단기 절연재료의 특성에 관한 연구)

  • Kim, Hyung-Rae;Kim, Dong-Ook;Kim, Hyeog-Soo;Choi, Chung-Seog;Kim, Hoon
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.07a
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    • pp.878-881
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    • 2001
  • In this paper, we analyzed the characteristics of insulating material with ELB(earth leakage circuit breaker) through tracking experiment and the study was carried out three different types of samples. The tracking is breakdown phenomenon of material surface that is generated on the organic insulating material. The test method applied IEC publication 587. The result of the sample breakdown by tracking was carbonized and resistance of between the electrodes is approximately 300$\Omega$. In the result of DSC analysis, the caloric peak was detected before 100$^{\circ}C$ in product of tracking. It appeared weight loss of 10.87% at 537$^{\circ}C$ on TGA. IR spectrum analysis showed carbon-hydrogen(C-H)bond on molecular structure that is the sample of tracking.

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An SOI LDMOS with Graded Gate and Recessed Source (경사진 게이트를 갖는 Recessed Source SOI LDMOS)

  • Kim, Chung-Hee;Choi, Yearn-Ik;Chung, Sang-Koo
    • Proceedings of the KIEE Conference
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    • 2001.07c
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    • pp.1451-1453
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    • 2001
  • An SOI(Silicon-On-Insulator) LD(Lateral Double-diffused)MOS with graded gate and recessed source is proposed. The proposed structure can increase the breakdown voltage by reducing the electric field crowding at the edge of gate. Simulation results by TSUPREM4 and MEDICI have shown that the breakdown voltage of proposed device was found to be 52 V while that of conventional device was 45 V. At the same breakdown voltage of 45 V, the on-resistance of the LDMOS with graded gate and recessed source was 14.4 % lower than that of conventional structure.

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A study on the Crystal Structure and dielectric breakdown properties of Polypropylene. (폴리프로필렌의 결정구조와 절연파괴특성에 관한 연구)

  • Kang, J.H.;Yu, K.M.;Kim, J.S.;Oh, S.C.;Chang, Y.S.;Han, S.O.;Park, K.S.
    • Proceedings of the KIEE Conference
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    • 1998.07d
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    • pp.1428-1431
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    • 1998
  • The polypropylene has been known to have higher melting temperature than polyethylene, and good mechanical properties. This paper introduces the experement result of dielectric breakdown properties to a polypropylene with a crystal structure. According to the experement, breakdown voltage is incresed when a thickness of thin film thinned. Spherulites of PP film prepared by annealing is larger than that of PE.

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Study of performance and characteristics of InP-composite channel MHEMT for High Breakdown Voltage (높은 항복전압을 위한 InP 합성 채널 MHEMT의 성능과 특성에 대한 연구)

  • Choi, Seok-Gyu;Beak, Young-Hyun;Han, Min;Lee, Seong-Dea;Rhee, Jin-Koo
    • Proceedings of the IEEK Conference
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    • 2006.06a
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    • pp.467-468
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    • 2006
  • To perform the comparative study, we experimented on two differential epitaxial structures, the conventional Metamorphic High Electron Mobility Transistor (MHEMT) using the InAlAs/InGaAs structure and the InP-composite channel MHEMT adopting the InAlAs/InGaAs/InP/n-InP structure. Compared to the conventional MHEMT, the InP-composite channel MHEMT shows improved breakdown performance; over about 3.5 V. This increased breakdown voltage can be explained by the lower impact ionization coefficient of the InP-composite channel MHEMT than that of the conventional MHEMT.

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A New SOI LDMOSFET Structure with a Trench in the Drift Region for a PDP Scan Driver IC

  • Son, Won-So;Kim, Sang-Gi;Sohn, Young-Ho;Choi, Sie-Young
    • ETRI Journal
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    • v.26 no.1
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    • pp.7-13
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    • 2004
  • To improve the characteristics of breakdown voltage and specific on-resistance, we propose a new structure for a LDMOSFET for a PDP scan driver IC based on silicon-on-insulator with a trench under the gate in the drift region. The trench reduces the electric field at the silicon surface under the gate edge in the drift region when the concentration of the drift region is high, and thereby increases the breakdown voltage and reduces the specific on-resistance. The breakdown voltage and the specific on-resistance of the fabricated device is 352 V and $18.8 m{\Omega}{\cdot}cm^2$ with a threshold voltage of 1.0 V. The breakdown voltage of the device in the on-state is over 200 V and the saturation current at $V_{gs}=5V$ and $V_{ds}$=20V is 16 mA with a gate width of $150{\mu}m$.

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Development of a Web-Based Application for YWBS in Integrated Management Systems (세일요트 통합관리 시스템을 위한 웹기반 YWBS 설계 프로그램)

  • Lee, Dong Kun;Nam, Seung Hoon;Jeong, Yong Kuk;Shin, Jong Gye
    • Journal of Korean Institute of Industrial Engineers
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    • v.39 no.1
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    • pp.46-54
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    • 2013
  • Recently, the marine leisure industry has begun to make a mark on the growth engines of the Korean economy. Hence, various government research projects are in progress to catch up with the fundamental yacht technologies of advanced countries. Research on the integrated management technologies of sail yachts is carried out as a part of those projects. Work Breakdown Structure (WBS) is a basic architecture for robust and high-level management systems. In this paper, we suggest a product-oriented Yacht Work Breakdown Structure (YWBS). General WBS has a drawback in that it can only follow the targeted purpose, but YWBS allows for a generic WBS approach. This concept allows us to apply WBS to multi-purpose uses. The YWBS is used as an infrastructure in information management and for data relationships in sail yacht management systems. YWBS is designed and managed by a web application, and the system is implemented with a website as a user interface. This application has not only a design function, but also a data transfer function that is based on the Microsoft Silverlight platform, a kind of Rich Internet Application (RIA) technology. Using this application, YWBS designers can communicate with the management system without added tasks like as uploading and updating.

Analysis of Standardized Drawings and Breakdown Structure to Develop of 3D Object Library for Railway Infrastructure (철도인프라 3차원 객체라이브러리 구축을 위한 표준도/분류체계 분석)

  • Park, Hyung-Jin;Seo, Myoung-Bae
    • Journal of the Computational Structural Engineering Institute of Korea
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    • v.30 no.1
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    • pp.71-76
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    • 2017
  • In BIM design, the construction and use of a library are very important. Since the existing contents can be re-used, the design can be executed more effectively and efficiently. Unlike the construction, the civil engineering, in particular, the railroad sees an inappropriate development and standardization of libraries. Thus, this study aims to develop and standardize the 3D object library in the railroad facility. We first gather and analyze the railroad facility breakdown structure and relevant drawings. We then match the items of analyzed standard drawings and the breakdown structure items. It was reviewed whether the library was required according to all items, and if required, it was reviewed what software was proper. Available software were found to be Civil 3D, Revit, etc. Based on this analysis, we will design the attribute items and specifications of the 3D railroad infrastructure library, as well as construct the library thereof.

The Development of Urban Metro Maintenance Facility System Using Construction Classification System Management (공종분류체계를 활용한 도시철도 시설물 유지관리시스템 개발)

  • Hyun, Ji-Hun;Yang, Byong-Soo;Moon, Sung-Woo
    • Korean Journal of Construction Engineering and Management
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    • v.13 no.4
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    • pp.69-77
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    • 2012
  • The construction data should be controlled from the life-cycle perspective. The current PMIS (Project Management Information System) usually focuses on the construction operation stage. The PMIS does consider the utilization of the construction in the maintenance of constructed facilities. This paper tries to interface the construction data with the maintenance data for effective use of construction data in the life-cycle perspective. To achieve the research objective, a maintenance breakdown structure is established and connected to the work breakdown structures. The connection of the two breakdown structures provide a structured utilization of construction data for efficient maintenance work activities. A prototype suggests that the interface of maintenance and work breakdown structures can help provide a construction and maintenance data in a more efficient way for maintenance activities.

Simulation Design of MHEMT Power Devices with High Breakdown Voltages (고항복전압 MHEMT 전력소자 설계)

  • Son, Myung-Sik
    • Journal of the Korean Vacuum Society
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    • v.22 no.6
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    • pp.335-340
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    • 2013
  • This paper is for the simulation design to enhance the breakdown voltage of MHEMTs with an InP-etchstop layer. Gate-recess and channel structures has been simulated and analyzed for the breakdown of the MHEMT devices. The fully removed recess structure at the drain side of MHEMT shows that the breakdown voltage enhances from 2 V to almost 4 V as the saturation current at gate voltage of 0 V is reduced from 90 mA to 60 mA at drain voltage of 2 V. This is because the electron-captured negatively fixed charges at the drain-side interface between the InAlAs barrier and the $Si_3N_4$ passivation layers deplete the InGaAs channel layer more and thus decreases the electron current passing the channel layer and thus the impact ionization in the channel become smaller. In addition, the replaced InGaAs/InP composite channel with the same thickness in the same asymmetrically recessed structure increases the breakdown voltage to 5 V due to the smaller impact ionization and mobility of the InP layer at high drain voltage.