• Proceedings of the Korean Institute of Building Construction Conference
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• 2015.11a
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• pp.81-82
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• 2015

BIM has been a reliable construction project management tool to handle various kinds of construction information generated in the facility life cycle. To take these advantages, researchers have been promoted numerous studies in a residential, a commercial, and an educational facilities with a large number of on-going projects. However, despite running as the role of essential energy supplier, power plant related BIM research is relatively insufficient than others. In particular, due to the extending of the facility service period and the requirement of the complicated construction project management for 'overhaul' and 'repowering' in the power plant maintenance phase, the needs for using BIM have been increased gradually. For using BIM based maintenance, it is needed to consider an information collecting methods and necessary to develop an appropriate breakdown structure to share information. Therefore, 'EBS' is produced by reviewing the previous research related to BIM and analyzing the repair activities in the maintenance phase. Proposed 'EBS' must be useful not only a judgment between capital expenditure versus revenue expenditure but also appropriate maintenance strategies development for property management.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.4
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• pp.208-211
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• 2018

This paper details the design of a 1,200 V class trench gate field stop IGBT (insulated gate bipolar transistor) with a nano gate structure smaller than 1 um. Decreasing the size is important for lowering the cost and increasing the efficiency of power devices because they are high-voltage switching devices, unlike memory devices. Therefore, in this paper, we used a 2-D device and process simulations to maintain a gate width of less than 1 um, and carried out experiments to determine design and process parameters to optimize the core electrical characteristics, such as breakdown voltage and on-state voltage drop. As a result of these experiments, we obtained a wafer resistivity of $45{\Omega}{\cdot}cm$, a drift layer depth of more than 180 um, an N+ buffer resistivity of 0.08, and an N+ buffer thickness of 0.5 um, which are important for maintaining 1,200 V class IGBTs. Specially, it is more important to optimize the resistivity of the wafer than the depth of the drift layer to maintain a high breakdown voltage for these devices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.288-291
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• 2004

Due to the charge compensation effect, SOI(Silicon-On-Insulator) LIGBT with dual-epi layer have been found to exhibit both low forward voltage drop and high static breakdown voltage. In this paper, electrical characteristics of the SOI LIGBT with dual-epi structure is presented. Trenched anode structure is employed to obtain uniform current flowlines and shorted anode structure also employed to prevent the fast latch-up. Latching current density of the proposed LIGBT with $T_1=T_2=2.5{\mu}m,\;N_1=7{\times}10^{15}/cm^3,\;N_2=3{\times}10^{15}/cm^3$ is $800A/cm^2$ and breakdown voltage is 125V while latching current density and breakdown voltage of the conventional LIGBT is $700A/cm^2$ and 55V.

• Journal of the Korea Institute of Information Security & Cryptology
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• v.29 no.2
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• pp.439-449
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• 2019

The development of information technology represented by ICBMA (IoT, Cloud, Big Data, Mobile, AI), is leading to a surge in data and a numerical and quantitative increase in data centers to accommodate it. As the data center is recognized as a social infrastructure, It is very important to identify physical security threats in advance in order to secure safety, such as responding to a terrorist attack. In this paper, we develop physical security threat breakdown structure (PS-TBS) for easy identification and classification of threats, and verify the feasibility and effectiveness of the PS-TBS through expert questionnaires. In addition, we intend to contribute to the improvement of physical security level by practical use in detailed definition on items of PS-TBS.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.78-81
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• 2004

In this paper, the effect of adhesion properties of semiconductive-insulating interface layer of silicone rubber on electrical properties was investigated. Surface structure and adhesion of semiconductive silicon rubber by surface asperity was obtained from SEM and T-peel test. In addition, ac breakdown test was carried out for elucidating the change of electrical property by roughness treatment. From the results, Adhesive strength of semiconductive-insulation interface was increased with surface asperity. Dielectric breakdown strength by surface asperity decreased than initial Specimen, but increased from Sand Paper #1200. According to the adhesional strength data unevenness and void formed on the silicone rubber interface expand the surface area and result in improvement of adhesion. Before treatment Sand Paper #1200, dielectric breakdown strength was decreased by unevenness and void which are causing to have electric field mitigation small. After the treatment, the effect of adhesion increased dielectric breakdown strength. It is found that ac dielectric breakdown strength was increased with improving the adhesion between the semiconductive and insulating interface.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.191-192
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• 2005

The reverse breakdown voltages of 4H-SiC SBD(schottky barrier diode)s with FP(Field Plate) and/or FLR(Field Limiting Ring) as a edge termination, were investigated. The breakdown voltages of SBDs with FP ware investigated varying the overlap width from $1{\mu}m$ to $30{\mu}m$. The maximum average breakdown voltages was 475V. There is no significant changes for the devices with overlap width of between $5{\mu}m\sim30{\mu}m$. It was confirmed that the dielectric breakdown of the thin thermal oxide is main cause of device failure. However, the breakdown voltage of SBD with FLR was 1400V even though the FLR edge termination structure was not optimized.

• Journal of Electrical Engineering and Technology
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• v.7 no.4
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• pp.601-605
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• 2012

Insulated Gate Bipolar Transistors(IGBTs) have received wide attention because of their high current conduction and good switching characteristics. To reduce the power loss of IGBT, the onstate voltage drop should be lowered and the switching time should be shortened. However, there is trade-off between the breakdown voltage and the on-state voltage drop. The FLoatingIsland(FLI) structure can lower the on-state voltage drop without reducing breakdown voltage. In this paper, The FLI IGBT shows an on-state voltage drop that is 22.5% lower than the conventional IGBT, even though the breakdown voltages of each IGBT are almost identical.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.955-958
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• 2001

The structure characteristics of varistor of Zn oxide to depend on the breakdown voltage has been investigated to annealing condition by additive material of Sb$_2$O$_3$ system. The breakdown voltage that has not doping Sb$_2$O$_3$ was 235[V]. ZnO varistors was shown ohmic properties when it's applied voltage was below critical voltage. It was shown non-ohmic properties over critical voltage, because current was increased with decreasing resistance. High voltage ZnO varistors had high breakdown voltage, but it had bad electrical stability with various surge. Sb$_2$O$_3$was increased non-linear coefficient in ZnO varistors grain boundary.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.206-209
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• 2002

With the progress of semiconductor processing technology, avalanohe photodiodes (APDs) based on InP/InGaAs are used for high-speed optical receiver modules. Planar-type APDs give higher reliability than mesa-type APDs. However, Planar-type APDs are struggled with a problem of intensed electric field at the junction curvature, which causes edge breakdown phenomena at the junction periphery. In this paper, we focused on studying the effects of junction curvature for APDs performances by different etching processes followed by single diffusion to from p-n junction. The performance of each process is characterized by observing electric field profiles and carrier generation rates. From the results, it can be understood to predict the optimum structure, which can minimize edge breakdown and improve the manufacturability.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.8
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• pp.496-500
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• 2015

This paper was proposed the theoretical research and optimal design 3000V super junction NPT IGBT for using electrical automotive and power conversion. Because super junction IGBT was showed ultra low on resistance, it was structure that can improve the thermal characteristics of conventional NPT IGBT. The electrical characteristics of super junction NPT IGBT were 2.52 V of on state voltage drop, 4.33 V of threshold voltage and 2,846 V breakdown voltage. We did not obtaing 3,000 V breakdown voltage but we will obtain 3,000 V breakdown voltage through improving p pillar layer. If we are carried this research, This device will be used electrical automotive, power conversiton and high speed train.