Proceedings of the Korean Society of Propulsion Engineers Conference
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1994.11a
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pp.21-26
/
1994
Conventional electroexplosive devices (EED) commonly use a very small metal bridgewire to ignite explosive materials i.e. pyrotechnics, primary and secondary explosives. The use of semiconductor devices to replace “hot-wire” resistance heating elements in automotive safety systems pyrotechnic devices has been under development for several years. In a typical 1 amp/1 watt electroexplosive devices, ignition takes place a few milliseconds after a current pulse of at least 25 mJ is applied to the bridgewire. In contrast, as for a SCB devices, ignition takes place in a few tens of microseconds and only require approximately one-tenth the input energy of a conventional electroexplosive devices. Typically, when SCB device is driven by a short (20 $\mu\textrm{s}$), low energy pulse (less than 5 mJ), the SCB produces a hot plasma that ignites explosive materials. The advantages and disadvantages of this technology are strongly dependent upon the particular technology selected. To date, three distinct technologies have evolved, each of which utilizes a hot, silicon plasma as the pyrotechnic initiation element. These technologies are 1.) Heavily doped silicon as the resistive heating initiation mechanism, 2.) Tungsten enhanced silicon which utilizes a chemically vapor deposited layer of tungsten as the initiation element, and 3.) a junction diode, fabricated with standard CMOS processes, which creates the initial thermal environment by avalanche breakdown of the diode. This paper describes the three technologies, discusses the advantages and disadvantages of each as they apply to electroexplosive devises, and recommends a methodology for selection of the best device for a particular system environment. The important parameters in this analysis are: All-Fire energy, All-Fire voltage, response time, ease of integration with other semiconductor devices, cost (overall system cost), and reliability. The potential for significant cost savings by integrating several safety functions into the initiator makes this technology worthy of attention by the safety system designer.
Kim, In-Seong;Lee, Dong-Yun;Song, Jae-Seong;Yun, Mu-Su;Park, Jeong-Hu
The Transactions of the Korean Institute of Electrical Engineers C
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v.51
no.5
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pp.185-190
/
2002
Capacitor material utilized in the downsizing passive devices and dynamic random access memory(DRAM) requires the physical and electrical properties at given area such as capacitor thickness reduction, relative dielectric constant increase, low leakage current and thermal stability. Common capacitor materials, $SiO_2$, $Si_3N_4$, $SiO_2$/$Si_3N_4$,TaN and et al., used until recently have reached their physical limits in their application to several hundred angstrom scale capacitor. $Ta_2O_{5}$ is known to be a good alternative to the existing materials for the capacitor application because of its high dielectric constant (25 ~35), low leakage current and high breakdown strength. Despite the numerous investigations of $Ta_2O_{5}$ material, there have little been established the clear understanding of the annealing effect on capacitance characteristic and conduction mechanism, design and fabrication for $Ta_2O_{5}$ film capacitor. This study presents the structure-property relationship of reactive-sputtered $Ta_2O_{5}$ MIM capacitor structure processed by annealing in a vacuum. X-ray diffraction patterns skewed the existence of amorphous phase in as-deposited condition and the formation of preferentially oriented-$Ta_2O_{5}$ in 670, $700^{\circ}C$ annealing. On 670, $700^{\circ}C$ annealing under the vacuum, the leakage current decrease and the enhanced temperature-capacitance characteristic stability. and the leakage current behavior is stable irrespective of applied electric field. The results states that keeping $Ta_2O_{5}$ annealed at vacuum gives rise to improvement of electrical characteristics in the capacitor by reducing oxygen-vacancy and the broken bond between Ta and O.
Song, YuRi;Kim, SeYeon;Park, Mee Hee;Na, Hee Sam;Chung, Jin
International Journal of Oral Biology
/
v.42
no.1
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pp.17-23
/
2017
Background: Periodontitis is generally a chronic disorder characterized by the breakdown of tooth-supporting tissues. P. gingivalis, a Gram-negative anaerobic rod, is one of the major pathogens associated with periodontitis. Frequently, P. gingivalis infection leads to cell death. However, the correlation between P. gingivalis-induced cell death and periodontal inflammation remains to be elucidated. Among cell deaths, the death of immune cells appears to play a significant role in inflammatory response. Thus, the aim of this study was to examine P. gingivalis-induced cell death, focusing on autophagy and apoptosis in THP-1 cells. Methods: Human acute monocytic leukemia cell line (THP-1) was used for all experiments. Autophagy induced by P. gingivalis in THP-1 cells was examined by Cyto ID staining. Intracellular autophagic vacuoles were observed by fluorescence microscopy using staining Acridine orange (AO); and 3-methyladenine (3-MA) was used to inhibit autophagy. Total cell death was measured by LDH assay. Cytokine production was measured by an ELISA method. Results: P. gingivalis induced autophagy in an MOI-dependent manner in THP-1 cells, but 3-MA treatment decreased autophagy and increased the apoptotic blebs. P. gingivalis infection did not increase apoptosis compared to the control cells, whereas inhibition of autophagy by 3-MA significantly increased apoptosis in P. gingivalis-infected THP-1 cells. Inhibition of autophagy by 3-MA also increased total cell deaths and inflammatory cytokine production, including $IL-1{\beta}$ and $TNF-{\alpha}$. Conclusion: P. gingivalis induced autophagy in THP-1 cells, but the inhibition of autophagy by 3-MA stimulated apoptosis, leading to increased cell deaths and pro-inflammatory cytokines production. Hence, the modulation of cell deaths may provide a mechanism to fight against invading microorganisms in host cells and could be a promising way to control inflammation.
Kim, Young-Sik;Lee, Yun-Hi;Ju, Byeong-Kwon;Sung, Mang-Young;Oh, Myung-Hwan
The Transactions of the Korean Institute of Electrical Engineers C
/
v.48
no.5
/
pp.319-325
/
1999
Direct current(d.c.)leakage current voltage characteristics of radio-frequencymagnetron sputtered BaTa\sub 2\O\sub 6\ film capacitors with aluminum(A1) top and indium tin oxide (ITO) bottom electrodes have been investigatedas a function of applied field and temperature. In order to study surfacetreatment effect on the electrical characteristics of as-deposited film weperformed exposure of oxygen plasma on $BaTa_2O_6$ surface. d. c.current-voltage (I-V), bipolar pulse charge-voltage (Q-V), d. c. current-time (I-t) andcapacitance-frequency (C-f) analysis were performed on films. All ofthe films exhibita low leakage current, a high breakdown field strength (3MV/cm-4.5MV/cm), and high dielectric constant (20-30). From the temperature dependence of leakage current,we can conclude that the dominant conduction mechanism is ascribed toSchottky emission at high electric field (>1MV/cm) and hopping conduction at lowelectric field (<1MV/cm). According to our results, the oxide plasma surfacetreatmenton as-deposited $BaTa_2O_6$ resulted in lowering interfacebarrier height and thus, leakage current when a negative voltage applied to the A1 electrode. This can be explained by reduction of surface contamination via etching surface and filling defects such as oxygen vacancies.
Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
/
2007.11a
/
pp.307-308
/
2007
This work shows the experimental results obtained from ageing at a temperature of 100 C for 48, 70 and 312 h, although the application of AC electrical tension in samples and the measuring of current leakage are presented. The measurements in samples were carried out with samples prepared from the deformulated commercial materials and respectively reformulated into thin films. The obtained results showed the mechanisms of conduction of samples in low and high electric fields. It was also identified an electric tension transition showing that in low fields it prevails the Ohm's law conduction, and in high electric fields it prevails the conduction of space charge limited current (SCLC). These results can support the natural rubber formulation process having as their main objective the reducing of the mechanisms that occur under high conduction current in high electric fields, which leads the material to a dielectric breakdown. Raw Natural rubber in Brazil is extracted from rubber trees (Hevea brasiliensis) in farms in So Paulo State by using some new plantation technology in smaller spaces, with trees placed a few meters from each other. In the Amazon rain forest the rubber trees are found naturally and their spacing may be of hundreds of meters or even kilometers between them. It is necessary to research this raw material from different internationally standard clones to characterize dielectric and electric properties for industrial applications. Moreover, this natural material has a low commercial price when compared to the synthetic ones.
The efficiency of such work highly depend on the worker's safety, who is protected by tools such as gloves, sleeves, blankets and flexible coverings among other manufactured natural-rubber goods. Use, storage and maintenance of these tools guarantee the quality and durability of the material. However, it might be observed that good tools made of such material are disapproved of when received from manufacturers or when they are removed from the warehouse for replacement. This work shows the experimental results obtained from ageing at a temperature of $100^{\circ}C$ for 48, 70 and 312 h, although the application of AC electrical tension in samples and the measuring of current leakage are presented. The measurements in samples were carried out with samples prepared from the deformulated commercial materials and respectively reformulated into thin films. The obtained results showed the mechanisms of conduction of samples in low and high electric fields. It was also identified an electric tension transition showing that in low fields it prevails the Ohm's law conduction, and in high electric fields it prevails the conduction of space charge limited current (SCLC). These results can support the natural rubber formulation process having as their main objective the reducing of the mechanisms that occur under high conduction current in high electric fields, which leads the material to a dielectric breakdown. It is necessary to research this raw material from different internationally standard clones to characterize dielectric and electric properties for industrial applications. Moreover, this natural material has a low commercial price when compared to the synthetic ones.
Oxide coatings are formed on die-cast AZ91D Mg alloy through an environmentally friendly plasma electrolytic oxidation(PEO) process using an electrolytic solution of $NaAlO_2$, KOH, and KF. The effects of PEO condition with different duty cycles (10 %, 20 %, and 40 %) and frequencies(500 Hz, 1,000 Hz, and 2,000 Hz) on the crystal phase, composition, microstructure, and micro-hardness properties of the oxide coatings are investigated. The oxide coatings on die-cast AZ91D Mg alloy mainly consist of MgO and $MgAl_2O_4$ phases. The proportion of each crystalline phase depends on various electrical parameters, such as duty cycle and frequency. The surfaces of oxide coatings exhibit as craters of pancake-shaped oxide melting and solidification particles. The pore size and surface roughness of the oxide coating increase considerably with increase in the number of duty cycles, while the densification and thickness of oxide coatings increase progressively. Differences in the growth mechanism may be attributed to differences in oxide growth during PEO treatment that occur because the applied operating voltage is insufficient to reach breakdown voltage at higher frequencies. PEO treatment also results in the oxide coating having strong adhesion properties on the Mg alloy. The micro-hardness at the cross-section of oxide coatings is much higher not only compared to that on the surface but also compared to that of the conventional anodizing oxide coatings. The oxide coatings are found to improve the micro-hardness with the increase in the number of duty cycles, which suggests that various electrical parameters, such as duty cycle and frequency, are among the key factors controlling the structural and physical properties of the oxide coating.
The AlGaN/GaN heterostructure has high electron mobility due to the two-dimensional electron gas (2-DEG) layer, and has the characteristic of high breakdown voltage at high temperature due to its wide bandgap, making it a promising candidate for high-power and high-frequency electronic devices. Despite these advantages, there are factors that affect the reliability of various device properties such as current collapse. To address this issue, this paper used metal-organic chemical vapor deposition to continuously deposit AlGaN/GaN heterostructure and SiN passivation layer. Material and electrical properties of GaN HEMTs with/without SiN cap layer were analyzed, and based on the results, low-frequency noise characteristics of GaN HEMTs were measured to analyze the conduction mechanism model and the cause of defects within the channel.
Inyoung Kang;Myoungjoo Koo;Hyejin Yoon;Beom Seok Park;Jin Hyun Jun;Jaewang Lee
Clinical and Experimental Reproductive Medicine
/
v.50
no.3
/
pp.154-159
/
2023
Monospermy occurs in the process of normal fertilization where a single sperm fuses with the egg, resulting in the formation of a diploid zygote. During the process of fertilization, the sperm must penetrate the zona pellucida (ZP), the outer layer of the egg, to reach the egg's plasma membrane. Once a sperm binds to the ZP, it undergoes an acrosomal reaction, which involves the release of enzymes from the sperm's acrosome that help it to penetrate the ZP. Ovastacin is one of the enzymes that is involved in breaking down the ZP. Studies have shown that ovastacin is necessary for the breakdown of the ZP and for successful fertilization to occur. However, the activity of ovastacin is tightly regulated to ensure that only one sperm can fertilize the egg. One way in which ovastacin helps to prevent polyspermy (the fertilization of an egg by more than one sperm) is by rapidly degrading the ZP after a sperm has penetrated it. This makes it difficult for additional sperm to penetrate the ZP and fertilize the egg. Ovastacin is also thought to play a role in the block to polyspermy, a mechanism that prevents additional sperm from fusing with the egg's plasma membrane after fertilization has occurred. In summary, the role of ovastacin in monospermic fertilization is to help ensure that only one sperm can fertilize the egg, while preventing polyspermy and ensuring successful fertilization.
Katie Lawther;Fernanda Godoy Santos;Linda B Oyama;Sharon A Huws
Animal Bioscience
/
v.37
no.2_spc
/
pp.337-345
/
2024
Ruminants possess a specialized four-compartment forestomach, consisting of the reticulum, rumen, omasum, and abomasum. The rumen, the primary fermentative chamber, harbours a dynamic ecosystem comprising bacteria, protozoa, fungi, archaea, and bacteriophages. These microorganisms engage in diverse ecological interactions within the rumen microbiome, primarily benefiting the host animal by deriving energy from plant material breakdown. These interactions encompass symbiosis, such as mutualism and commensalism, as well as parasitism, predation, and competition. These ecological interactions are dependent on many factors, including the production of diverse molecules, such as those involved in quorum sensing (QS). QS is a density-dependent signalling mechanism involving the release of autoinducer (AIs) compounds, when cell density increases AIs bind to receptors causing the altered expression of certain genes. These AIs are classified as mainly being N-acyl-homoserine lactones (AHL; commonly used by Gram-negative bacteria) or autoinducer-2 based systems (AI-2; used by Gram-positive and Gram-negative bacteria); although other less common AI systems exist. Most of our understanding of QS at a gene-level comes from pure culture in vitro studies using bacterial pathogens, with much being unknown on a commensal bacterial and ecosystem level, especially in the context of the rumen microbiome. A small number of studies have explored QS in the rumen using 'omic' technologies, revealing a prevalence of AI-2 QS systems among rumen bacteria. Nevertheless, the implications of these signalling systems on gene regulation, rumen ecology, and ruminant characteristics are largely uncharted territory. Metatranscriptome data tracking the colonization of perennial ryegrass by rumen microbes suggest that these chemicals may influence transitions in bacterial diversity during colonization. The likelihood of undiscovered chemicals within the rumen microbial arsenal is high, with the identified chemicals representing only the tip of the iceberg. A comprehensive grasp of rumen microbial chemical signalling is crucial for addressing the challenges of food security and climate targets.
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