• 통합자연과학논문집
• /
• 제4권3호
• /
• pp.192-196
• /
• 2011

New method to encode multiple photonic features of Bragg type reflector on silicon wafer has been investigated. Multiple bit encodes of distributed Bragg reflector features have been prepared by electrochemical etching of crystalline silicon by using various square wave current densities. Optical characterization of multi-encoding of distributed Bragg reflectors on porous silicon was achieved by Ocean optics 2000 spectrometer for the search of possible applications of multiple bit encoding of distributed Bragg reflectors such as multiplexed assays and chemical sensors. The morphology and cross-sectional structure of multi-encoded distributed Bragg reflectors was investigated by field emission scanning electron micrograph.

• 통합자연과학논문집
• /
• 제5권1호
• /
• pp.27-31
• /
• 2012

Relationship between reflection resonance and applied current density in Bragg photonic crystal has been investigated. Multiple bit encodes of distributed Bragg reflector features have been prepared by electrochemical etching of crystalline silicon by using various square wave current densities. Optical characterization of multi-encoding of distributed Bragg reflectors on porous silicon was achieved by Ocean optics 2000 spectrometer for the search of possible applications of multiple bit encoding of distributed Bragg reflectors such as multiplexed assays and chemical sensors. The morphology and cross-sectional structure of multi-encoded distributed Bragg reflectors was investigated by field emission scanning electron micrograph.

• 통합자연과학논문집
• /
• 제2권1호
• /
• pp.45-49
• /
• 2009

Electrochemical etching of heavily doped p-type silicon wafers (boron doped, <100> orientation, resistivity; $0.8-1.2m{\Omega}/cm$) with different current density resulting two different refractive indices resulted in DBR (Distributed Bragg Reflectors) porous silicon, which exhibited strong in-plane anisotropy of refractive index (birefringence). Dielectric stacks of birefringent porous silicon acting as distributed Bragg reflectors have two distinct reflection bands depending on the polarization of the incident linearly polarized light. This effect is caused by a three-dimensional (in plane and in depth) variation of the refraction index. Optical characteristics of DBR porous silicon were investigated.

• 통합자연과학논문집
• /
• 제4권1호
• /
• pp.11-14
• /
• 2011

Free-standing multilayer distributed Bragg reflectors (DBR) porous silicon dielectric mirrors, prepared by electrochemical etching of crystalline silicon using square wave currents are treated with polymethylmethacrylate (PMMA) to produce flexible, stable composite materials in which the porous silicon matrix is covered with caffeine-impregnated PMMA. Optically encoded free-standing DBR PSi dielectric mirrors retain the optical reflectivity. Optical characteristics of free-standing DBR PSi dielectric mirrors are stable and robust for 24 hrs in a pH 12 aqueous buffer solution. The appearance of caffeine and change of DBR peak were simultaneously measured by UV-vis spectrometer and Ocean optics 2000 spectrometer, respectively.

• 통합자연과학논문집
• /
• 제2권2호
• /
• pp.82-85
• /
• 2009

Distributed Bragg reflector (DBR) porous silicon (PSi) was generated by an electrochemical etching a bragg structure into a silicon wafer through electrode current in aqueous ethanolic HF solution. DBR PSi exhibiting unique reflectivity was successfully obtained by an electrochemical etching of silicon wafer using square current waveform. The multilayered photonic crystals of DBR PSi exhibited the reflection of a specific wavelength with high reflectivity in the optical reflectivity spectrum. In this work, we have developed a method to create refractive index in Si substrate through intensity of an electric current. The electrochemical process allows for precise control of the structural properties of DBR PSi such as thickness of the porous layer, porosity, and average pore diameter. The number of reflection peak of DBR PSi and its pore size increased as the intensity of electric current increased. This might be a demonstration for the fabrication of specific reflectors or filters.

• 한국정보통신학회논문지
• /
• 제23권3호
• /
• pp.311-317
• /
• 2019

먼저 광학 신호를 이용한 다양한 응용 분야에서의 핵심 요소인 광학 빔 조향 성능 향상을 위하여 실리콘 기반 격자 구조의 특성을 해석하였다. 이를 기반으로 높은 방사 효율과 좁은 빔 폭을 얻기 위해서 기존의 격자 구조 방사기에 분배 브래그 반사기(Distributed Bragg Reflector, DBR)를 집적한 구조를 제안한다. 분배 브래그 반사기의 위치에 따른 방사 효율과 방사 각도의 전치 반폭을 분석하고 이를 토대로 최적화 구조를 제안한다. 제안한 격자 구조는 상보형 금속산화 반도체(complementary metal-oxide semiconductor, CMOS) 공정과 호환 가능하며, 최대 방사 효율 87.1% 및 최소 방사 각도의 반치 전폭 $4.68^{\circ}$를 가진다.