• Journal of computational fluids engineering
• /
• v.17 no.2
• /
• pp.93-99
• /
• 2012

The present study focuses on the case of developing flow with in a channel containing a long array of sinusoidal waves (2a/${\lambda}$=0.1, ${\lambda}$=h, ${\lambda}$ is the wavelength, 2a is the wave height, h is the mean channel depth) at the bottom wall. The Reynolds number defined with channel height, h and the mean velocity, U, is Re=6,700. The channel is sufficiently long such that transition is completed and the flow is fully developed over the downstream half of the channel. For the case of an incoming steady flow with no resolved turbulence, the instantaneous flow fields in the transition region are characterized by the formation of arrays of highly-organized large-scale hairpin vortices whose dimensions scale with that of the roughness elements. The paper explains the mechanism for the formation of these arrays of hairpin vortices and shows these eddies play the primary role in the formation of the large-scale streaks of high and low velocity over the wavy wall region. The presence of resolved turbulence in the incoming flow, reduces the streamwise distance needed for the streaks to develop over the wavy region, but does not affect qualitatively the transition process. In the fully-developed region, isolated and trains of large-scale hairpins play an important role in the dynamics of the streaks over the wavy wall.

• Journal of Korean Society of Coastal and Ocean Engineers
• /
• v.7 no.1
• /
• pp.12-23
• /
• 1995

Currents driven by irregular waves are modelled using numerical model with various empirical relations improved. Kitaigorodskii's equilibrium equation is refined to account for shoaling effect and used for checking the breaking condition. In order to compute the bottom friction realistically. equivalent roughness blights are estimated considering the ripple shape and bed load transport which may be significant the surf zone. Two sets of equations are employed to evaluate the ripple shape: one is suggested by Nielsen and the other by Madsen and Rogengaus. Both equations give similar shape of ripples. but Madsen et al. give lower value of ripple factor than Swart suggesting that the equivalent roughness becomes relatively small. Optimization technique is used to determine the proper values for the empirical parameters of $\kappa$-ι equations, and the longshore current velocity is computed using the values of empirical parameters determined by the optimization technique.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.4 no.5
• /
• pp.1127-1134
• /
• 2000

$RuO_2$ thin films are prepared by RP magnetron reactive sputtering and their characteristics of crystalliBation,microstructure, surface roughness and resistivity are studied with various O2/(Ar+O2)ratios and substrate temperatures. As O2/(Ar+O2) ratio decreases and substrate temperature increases, the preferred growing plane of$RuO_2$ thin films are changed from (110) to (101) plane. With increase of the 021(Ar+O2) ratio from 2075 to 50%, the surface roughness and the resistivity of $RuO_2$ thin films increase from 2.38nm to 7.81nm, and from $103.6 \mu\Omega-cm\; to \; 227 \mu\Omega-cm$, respectively, but the deposition rate decreases from 47nm/min to 17nm/min. On the other hand, as the substrate temperature increases from room temperature to$500^{\circ}C$, resistivity decreases from $210.5 \mu\Omega-cm\; to \; 93.7\mu\Omega-cm$. $RuO_2$ thin film deposited at $300^{\circ}C$ shows a excellent surface roughness of 2.38 m. As the annealing temperature increases in the range between $400^{\circ}C$ and $650^{\circ}C$, the resistivity decreases because of the improvement of crystallinity. We find that RuO$_2$ thin film deposited at 20% of 02/(Ar+O2) ratio and $300^{\circ}C$ of substrate temperature shows excellent combination of surface smoothness and low resistivity so that it is well qualified for bottom electrode for ferroelectric thin films.

• Journal of the Korean Institute of Telematics and Electronics D
• /
• v.35D no.7
• /
• pp.72-78
• /
• 1998

This paper is focused on the fabrication of reliable novel antifuse, which could operate at low voltage along with the improvement in OFF and ON-state properties. The fabricated antifuse consists of Al/BaTi$_{2}$O$_{3}$/SiO$_{2}$/TiW-silicide structure. Through the systematic analyses for bottom metal and the intermetallic insulator, material and electri cproperties were investiaged. TiW-silicide as the bottom electrode had smooth surface with average roughness of 11.angs. at 10X10.mu.m$^{2}$ and was bing kept as-deposited SiO$_{2}$ film stable. Amorphous BaTi$_{2}$O$_{3}$ film as the another insulator was chosen because of its low breakdown strength (2.5MV/cm). breakdown voltage of antifuse is remarkably reduced by using BaTi$_{2}$O$_{3}$ film, and leakage current of that maintained low level due to the SiO$_{2}$ film. Low ON-resistance (46.ohm./.mu.m$^{2}$) and low programming voltage(9.1V) can be obtained in theses antifuses with 220.angs. double insulator layer and 19.6X10$^{-6}$ cm$^{2}$ area, while keeping sufficient OFF-state reliability (less than 1nA).

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2000.05a
• /
• pp.963-966
• /
• 2000

Plasma display panel (PDP) is a type of flat panel display utilizing the light emission that is produced by gas discharge. Barrier Ribs of PDP separating each sub-pixel prevents optical and electrical crosstalk from adjacent sub-pixels. Mold for forming barrier ribs has been newly researched to overcome the disadvantages of conventional manufacturing process such as screen printing, sand-blasting and photosensitive glass methods. Mold for PDP barrier ribs have stripes of micro grooves transferring stripes of glass-material wall. In this paper. Stripes of grooves of which width 48 um, depth 124um, pitch 274um was acquired by machining the material of WC with dicing saw blade. Maximum roughness of the bottom and sidewall of the grooves was respectively 120 nm, 287 nm. Maximum tilt angle caused by difference between upper-most width and lower-most width was 2$^{\circ}$. Maximum Radius of curvature of bottom was 7.75 ${\mu}{\textrm}{m}$. This results meets the specification for barrier ribs of 50 inch XGA PDP. Forming the glass paste will be followed by using mold in the near future.

• Journal of the Korean Institute of Telematics and Electronics D
• /
• v.34D no.8
• /
• pp.8-14
• /
• 1997

RuO$_{2}$ thin films are prepared by RF magnetron reactive sputtering and their characteristics of crystallization, microstructue, surface roughness and resistivity are studied with various O$_{2}$/(Ar+O$_{2}$) ratios and substrate temperatures. As O$_{2}$/(Ar+O$_{2}$) ratio decreas and substrate temperature increases, the preferred growing plane of RuO$_{2}$ thin films are changed from (110) to (101) plane. With increase of the O$_{2}$/(Ar+O$_{2}$) ratio from 20% to 50%, the surface roughness and the resistivity of RuO$_{2}$ thin films increase form 2.38nm to 7.81 nm, and from 103.6.mu..ohm.-cm to 227.mu..ohm.-cm, resepctively, but the deposition rate decreases from 47 nm/min to 17nm/min. On the other hand, as the substrate temperature increases form room temperature to 500.deg. C, resistivity decreases from 210.5.mu..ohm.-cm to 93.7.mu..ohm.-cm. RuO$_{2}$ thin film deposited at 300.deg. C shows a execellent surface roughness of 2.38nm. As the annealing temperature increases in the range between 400.deg. C and 650.deg. C, the resistivity decreases because of th improvement of crystallinity. We find that RuO$_{2}$ thin film deposited at 20% of O$_{2}$/(Ar+O$_{2}$) ratio and 300.deg. C of substrate temperature shows execellent combination of surface smoothness and low resistrivity so that it is well qualified for bottom electrodes for ferroelectric thin films.

• Proceedings of the Korea Water Resources Association Conference
• /
• 2005.05b
• /
• pp.986-990
• /
• 2005

The present study aims to illuminate the vertical velocity profile of outer region of open-channel flow. Two sets of experiments were performed with PIV and propeller velocimeter. The first set was conducted to investigate the effect of bed roughness on the velocity distribution. The second set of experiments was carried out to find the effect of the Froude number on the velocity profile under the same bed roughness. The results reveal that the wake-law fits well with the experimental data from the bottom to the depth of maximum velocity, but it deviates from the experimental data above the maximum velocity point due to velocity-dip phenomenon, and that the velocity profile of the outer region is more influenced by the Froude number than the roughness. It is also shown that both the velocity difference between maximum velocity and surface velocity and the ratio of the average velocity to surface velocity become larger as the Froude number increases.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
• /
• 2000.10a
• /
• pp.494-498
• /
• 2000

RuO$_2$ thin films are prepared by RF magnetron reactive sputtering and their characteristics of crystallization, microstructure, surface roughness and resistivity are studied with various $O_2$/ (Ar+O$_2$) ratios and substrate temperatures. As $O_2$/(Ar+O$_2$) ratio decreases and substrate temperature increases, the preferred growing plane of RuO$_2$ thin films are changed from (110) to (101) plane. With increase of the $O_2$/(Ar+O$_2$) ratio from 20% to 50%, the surface roughness and the resistivity of RuO$_2$ thin films increase from 2.38nm to 7.81 nm, and from 103.6 $\mu$$\Omega$-cm to 227 $\mu$$\Omega$-cm, respectively, but the deposition rate decreases from 47 nm/min to 17 nm/min. On the other hand, as the substrate temperature increases from room temperature to 500 $^{\circ}C$, resistivity decreases from 210.5 $\mu$$\Omega$-cm to 93.7 $\mu$$\Omega$-cm. RuO$_2$ thin film deposited at 300 $^{\circ}C$ shows a excellent surface roughness of 2.38 nm. As the annealing temperature increases in the range between 400 $^{\circ}C$ and 650 $^{\circ}C$, the resistivity decreases because of the improvement of crystallinity. We find that RuO$_2$ thin film deposited at 20% of $O_2$/(Ar+O$_2$) ratio and 300 t of substrate temperature shows excellent combination of surface smoothness and low resistivity so that it is well Qualified for bottom electrodes for ferroelectric thin films.

• Proceedings of the Korean Magnestics Society Conference
• /
• 2004.12a
• /
• pp.135-136
• /
• 2004

• Journal of Advanced Marine Engineering and Technology
• /
• v.24 no.2
• /
• pp.17-23
• /
• 2000

Experimental investigations were conducted to study the forced convection of fully-developed turbulent flow in horizontal equilateral duct fabricated with the same length and equivalent diameter, but different surface roughness pitch ratio(P/e) of 4, 8 and 16 on the one side wall only. The experiments were performed with the hydraulic diameter based Reynolds number ranged from 70,000 to 10,000. The entire bottom wall of the duct was heated uniformly and the other surfaces were thermally insulated. To understand the mechanisms of the heat transfer enhancement, measurements of the heat transfer were done to investigate the contributive factor of heat transfer promotion, namely, the fin effect. And the results were compared with those of previous investigations for similarly configured channels, at which they were roughened by regularly spaced transverse ribs in the rectangular and circular channels.