• Journal of the Korean Ceramic Society
• /
• v.37 no.1
• /
• pp.77-81
• /
• 2000

Silica glass films to utilize optical waveguides was fabricated by Aerosol Flame Deposition(AFD) method. As the amount of B2O3 increased in the sol solution of (92-x)SiO2-xB2O3-8P2O5, the thermophoretic deposition rate onto Si substrate was markedly lowered due to vaporizing out of B2O3 and P2O5 during the vaporization and reaction of the aerosol in the flame. GeO2 was added to 62SiO2-30B2O3-8P2O5 in order to control easily the refractive index of glass films. As the amount of GeO2 increased from 2 to 12 wt%, its refractive index increased from 1.4633 up to 1.4716.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1996.11a
• /
• pp.71-74
• /
• 1996

Ta$_2$O$_{5}$ film ale recognized as promising capacitor dielectric for future DRAM\`s. The electrical properties of Ta$_2$O$_{5}$films greatly depend on the heating condition. In the practical fabrication process, several annealing process, such as the annealing of Al in H$_2$(about 40$0^{\circ}C$) and reflow of BPSG (borophosphosilicate glass) film in $N_2$(about 80$0^{\circ}C$), exist after deposition of Ta$_2$O$_{5}$ film. In this paper, we describe the temperature effect on the electrical properties of W/Ta$_2$O$_{5}$/Si structure. The thin film of Ta$_2$O$_{5}$ and tungsten have been deposited on p-si(100) wafer using the sputtering system. The heating temperature was varied from 500 to 90$0^{\circ}C$ in $N_2$for 30min and The degree of temperature is 100\`C. In a log(J/E$^2$) Vs 1/E plot of typical I-V data, we find a linear relationship for the temperature of 500, $600^{\circ}C$ and as deposition. This could indicate Fowler-Nordheim tunneling as the dominant mode of current transports. However, we can not find a linear relationship for the temperature above $700^{\circ}C$. This could not indicate Fowler-Nordheim tunneling as the dominant mode of current transport. The high frequency (1MHz) capacitance-voltage (C-V) of W/Ta$_2$O$_{5}$/Si Capacitor were investigated on the basis of shift in the threshold voltage and dielectric constant. The magnitude of the threshold voltage and dielectric constant depends on the heating temperature, and increases with heating temperature.temperature.