• Journal of the Korean Crystal Growth and Crystal Technology
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• v.23 no.3
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• pp.119-123
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• 2013

Most of the world's solar cells in photovoltaic industry are currently fabricated using crystalline silicon. Czochralski-grown silicon crystals are more expensive than multicrystalline silicon crystals. The future of solar-grade Czochralski-grown silicon crystals crucially depends on whether it is usable for the mass-production of high-efficiency solar cells or not. It is generally believed that the main obstacle for making solar-grade Czochralski-grown silicon crystals a perfect high-efficiency solar cell material is presently light-induced degradation problem. In this work, the substitution of boron with gallium in p-type silicon single crystal is studied as an alternative to reduce the extent of lifetime degradation. The diamond-wire sawing technology is employed to slice the silicon ingot. In this paper, the quality of the diamond wire-sawn gallium-doped silicon wafers is studied from the chemical, electrical and structural points of view. It is found that the characteristic of gallium-doped silicon wafers including texturing behavior and surface metallic impurities are same as that of conventional boron-doped Czochralski crystals.

• Proceedings of the KIEE Conference
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• 2002.11a
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• pp.167-169
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• 2002

Selective, highly stable determination of serotonin was achieved in cyclic voltammetric measurement carried out at electrochemically treated conductive boron-doped diamond electrode. Boron-doped diamond electrodes were prepared on single crystal Si wafers by microwave plasma chemical vapor deposition and $B_2O_3$ was dissolved in acetone/methanol(9:1) mixture solution so that the B/C weight ratio ca. $10^4ppm$. Serotonin is a kind of indoleamines, which secreted from adrenal marrow cells. The serious problem to detection of serotonin is the interference phenomena of electroactive constituent, including AA. In this study, electrochemical treatment of HDD was carried out to discriminate between serotonin and AA responses. Experimental results showed that the peak potential of AA oxidation shift to the positive direction and the oxidation peak of serotonin was unchanged.

• Journal of Electrochemical Science and Technology
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• v.14 no.3
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• pp.215-221
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• 2023

A rapid and environment-friendly electrochemical sensor to determine the chemical oxygen demand (COD) has been developed. The boron-doped diamond (BDD) thin-film electrode is employed as the anode, which fully oxidizes organic pollutants and provides a current response in proportion to the COD values of the sample solution. The BDD-based amperometric COD sensor is optimized in terms of the applied potential and the solution pH. At the optimized conditions, the COD sensor exhibits a linear range of 0 to 80 mg/L and the detection limit of 1.1 mg/L. Using a set of model organic compounds, the electrochemical COD sensor is compared with the conventional dichromate COD method. The result shows an excellent correlation between the two methods.

• Journal of the Korean Vacuum Society
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• v.9 no.2
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• pp.110-115
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• 2000

Deposition conditions of diamond thin films were optimized using hot-filament chemical vapor deposition (HFCVD). Boron-doped diamond thin films with varying boron densities were then fabricated using B4C solid pellets. Current-voltage responses and field emission currents were measured to test the characteristics of field emission display (FED). With the increase of boron doping, the crystal size of diamond decreased slightly, but its quality was not changed significantly in case of small doping. The I-V characterization was performed for Al/diamond/p-Si, and the current of doped diamond film was increased $10^4\sim10^5$ times as compared with that of undoped film. In the field emission properties, the electrons were emitted with low electric field with the increase of doping, while the emission current increased. The onset-field of electron emission was 15.5 V/$\mu\textrm{m}$ for 2 pellets, 13.6 V/$\mu\textrm{m}$ for 3 pellets and 11.1 V/$\mu\textrm{m}$ for 4 pellets. With the incorporation of boron, the slope of Fowler-Nordheim graph was decreased, revealing that the electron emission behavior was improved with the decrease of the effective barrier energy.

• Journal of the Korean institute of surface engineering
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• v.57 no.1
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• pp.1-7
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• 2024

The study investigated the impact of substrate pretreatment on depositing high-quality B-doped diamond (BDD) thin films using the HFCVD method. Films were deposited on Si and Nb substrates after sanding and seeding. Despite identical sanding conditions, BDD films formed faster on Nb due to even diamond seed distribution. Post-deposition, film average roughness (R_a) remained similar to substrate R_a, but higher substrate R_a led to decreased crystallinity. Nb substrate with 0.83 ㎛ R_a exhibited faster crystal growth due to dense, evenly distributed diamond seeds. BDD film on Nb with 0.83 ㎛ R_a showed a wide, stable potential window (2.8 eV) in CV results and a prominent 1332 cm^-1 diamond peak in R_aman spectroscopy, indicating high quality. The findings underscore the critical role of substrate pretreatment in achieving high-quality BDD film fabrication, crucial for applications demanding robust p-type semiconductors with superior electrical properties.

• Bulletin of the Korean Chemical Society
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• v.33 no.7
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• pp.2274-2278
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• 2012

To test the efficiency of the BDD electrode for complete mineralization of organic wastewater, phenol and 2-chlorophenol (2-CP) were treated electrochemically with both an active Pt/Ti electrode and a nonactive boron doped diamond (BDD) electrode, respectively, in neutral aqueous medium. Aqueous solutions of both phenol and 2-chlorophenol were treated electrochemically using an in-house fabricated flow through electrochemical cell (FTEC). The experimental variables included current input, treatment time, and the flow rate of the solutions. Depending on the magnitude of the applied current and reaction time, the compounds were either completely degraded or partially oxidized to other intermediates. Removal efficiencies reached as high as 93.2% and 94.8% both at the Pt/Ti electrode and BDD electrode, respectively, at an applied current of 200 mA for a 3.0 hr reaction and a flow rate of 4 mL/min. The BDD electrode was much more efficient for the complete mineralization of phenol and 2-chlorophenol than the Pt/Ti electrode.

• Journal of Environmental Science International
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• v.32 no.6
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• pp.465-475
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• 2023

In this study, we evaluated the treatment efficiency of livestock wastewater by altering the current density using boron-doped diamond (BDD) electrodes. As the current density was adjusted from 10 to 35 mA/cm2, the removal efficiency of organic matter increased from 22.2 to 71.5%. Similar to that of organic matter, the removal efficiency of color increased with increasing current density up to 85.7%, indicating a higher removal efficiency for color than that of organic matter. The removal efficiency of ammonia nitrogen increased from 14.6 to 53.3% as the current density increased, but it was lower than that of organic matter. In addition, the removal of organic matter, color, and ammonia nitrogen followed first-order reactions, according to the reaction rate analysis. The energy consumption ranged from 4.87 to 8.33 kWh/kg COD, and it was found that the organic matter removal efficiency was more efficient at high current densities. Based on various analyses, the optimal current density was 20 mA/cm2, and the corresponding energy consumption was 6.824 kWh/kg COD.

• 한국초전도학회:학술대회논문집
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• 2008.08a
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• pp.13-13
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• 2008

• Journal of the Korean institute of surface engineering
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• v.32 no.3
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• pp.244-248
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• 1999

Photoelectrodeposition of copper on semiconductive B-doped diamond films was investigated. There are cleasr morphology differences between photodeposited copper and electrodeposited copper. Photoelecrodeposition proceeded as uniform 2-dimensional growth. On the other hand electrodeposition proceeded as scarce random deposition. By applying this effect we have succeeded in forming a conductive pattern on semiconductive B-doped diamond with the aid of a photo-mask. And it was suggested that the surface reforming caused by photoelectrochemical process could be easily detected by the following metal (copper) deosition method, which is demonstrated as 'Diamond photographic phenomenon'.

• Journal of the Korean Electrochemical Society
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• v.3 no.4
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• pp.200-203
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• 2000

Boron doped conducting diamond thin films were grown on Si substrate by microwave plasma chemical vapor deposition from a gaseous feed of hydrogen, acetone/methanol and solid boron. The doping level of boron was ca. $10^2ppm\;(B/C)$. The Si substrate was tilted ca. $10^{\circ}$ to make Si substrate, which have different height and temperature. Experimental results showed that different crystalline of diamond thin films were made by different temperature of Si substrate. There appeared $3\~4$ steps of different crystalline morphology of diamond. To characterize the boron-doped diamond thin film, Raman spectroscopy was used for identification of crystallinity. To survey surface morphology, microscope was used. Grain size was changed gradually by different temperature due to different height. The Raman spectrum of film exhibited a sharp peak at $1334cm^{-1}$, which is characteristic of crystalline diamond. The lower position of diamond film position, the more non-diamond component peak appeared near $1550 cm^{-1}$.