• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.407-407
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• 2012

화학기상증착법(CVD; Chemical Vapor deposition)으로 h-BN을 증착하여 성장 시간에 따른 표면의 특성 및 결정성을 연구하였다. 암모니아 보레인(BH3NH3)을 보론 나이트라이드(Boron Nitride) 박막의 전구물질로 이용하였으며, $70{\sim}120^{\circ}C$로 열을 가하여 열분해하였다. $25{\mu}m$ 두께의 구리 기판을 챔버에 넣어서 Low pressure (~25 mTorr) 상태가 되도록 한다. 25 mTorr 이하의 압력에서 수소 가스 (0.2~1sccm)를 넣고 $20^{\circ}C$/min로 가열한 후 약 한 시간 후에 $990{\sim}1,000^{\circ}C$가 된다. 그 후 Cu foil의 표면을 부드럽게 하고, 산화막을 제거하기 위해 $990^{\circ}C$에서 40 분간 열처리(annealing)한다. 그 후 암모니아 보레인에서 분해된 보라진 가스(borazine; B3H6N3)로 h-BN을 합성한다. 성장 시간이 길수록 더 많은 부분이 보론 나이트라이드에 의해 덮인다는 것을 관찰하였고, 성장 시 주입하는 수소의 양(0.2~5 sccm)과 알곤(0~15 sccm)의 혼합 비율에 따라 보론 나이트라이드의 domain size가 변화함을 알 수 있었다. 그 각각의 차이를 주사 전자현미경(SEM; Scanning Electron Microscopy)을 통해 확인하고, 결정성을 라만 분광(Raman spectroscopy), 광전자 분광(XPS; X-ray photoelectron spectroscopy)으로 비교 분석하였다.

• Bulletin of the Korean Chemical Society
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• v.33 no.10
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• pp.3338-3342
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• 2012

Covalent functionalization of a $B_{12}N_{12}$ nano-cage with $CO_2$ molecule has been investigated using density functional theory in terms of energetic, geometric, and electronic property analyses. Results show that besides two physisorption configurations, $CO_2$ preferably tends to perform [2+2] addition on B-N bonds of the cluster which are shared between six-membered and four-membered rings, releasing energy of 14.99 kcal/mol for adsorption of the first $CO_2$ and of 15.45 kcal/mol for the second one (per each molecule). On the basis of calculated density of states, we have found that the electronic properties of the physisorbed $B_{12}N_{12}$ by $CO_2$ have not changed, while slight changes have been predicted in the functionalized cases. Present results might be helpful to provide an effective way to modify the $B_{12}N_{12}$ properties for further purifications and applications.

• Steel and Composite Structures
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• v.36 no.6
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• pp.671-687
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• 2020

The aim of this research is to analyze buckling and bending behavior of a sandwich Reddy beam with porous core and composite face sheets reinforced by boron nitride nanotubes (BNNTs) and shape memory alloy (SMA) wires resting on Vlasov's foundation. To this end, first, displacement field's equations are written based on the higher-order shear deformation theory (HSDT). And also, to model the SMA wire properties, constitutive equation of Brinson is used. Then, by utilizing the principle of minimum potential energy, the governing equations are derived and also, Navier's analytical solution is applied to solve the governing equations of the sandwich beam. The effect of some important parameters such as SMA temperature, the volume fraction of SMA, the coefficient of porosity, different patterns of BNNTs and porous distributions on the behavior of buckling and bending of the sandwich beam are investigated. The obtained results show that when SMA wires are in martensite phase, the maximum deflection of the sandwich beam decreases and the critical buckling load increases significantly. Furthermore, the porosity coefficient plays an important role in the maximum deflection and the critical buckling load. It is concluded that increasing porosity coefficient, regardless of porous distribution, leads to an increase in the critical buckling load and a decrease in the maximum deflection of the sandwich beam.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.100-100
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• 2016

Among various two-dimensional (2D) materials, 2D semiconductors and insulators have attracted a great deal of interest from nanoscience community beyond graphene, due to their attractive and unique properties. Such excellent characteristics have triggered highly active researches on 2D materials, such as hexagonal boron nitride (hBN), molybdenum disulfide (MoS2), and tungsten diselenide (WSe2). New physics observed in 2D semiconductors allow for development of new-concept devices. Especially, these emerging 2D materials are promising candidates for flexible and transparent electronics. Recently, van der Waals heterostructures (vdWH) have been achieved by putting these 2D materials onto another, in the similar way to build Lego blocks. This enables us to investigate intrinsic physical properties of atomically-sharp heterostructure interfaces and fabricate high performance optoelectronic devices for advanced applications. In this talk, fundamental properties of various 2D materials will be introduced, including growth technique and influence of defects on properties of 2D materials. We also fabricate high performance electronic/optoelectronic devices of vdWH, such as transistors, memories, and solar cells. The device platform based on van der Waals heterostructures show huge improvement of devices performance, high stability and transparency/flexibility due to unique properties of 2D materials and ultra-sharp heterointerfaces. Our work paves a new way toward future advanced electronics based on 2D materials.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.282.1-282.1
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• 2016

The remarkable physical properties of two-dimensional (2D) semiconducting materials such as molybdenum disulfide ($MoS_2$) and tungsten disulfide ($WS_2$) etc. have attracted considerable attentions for future high-performance electronic and optoelectronic devices. The ongoing studies of $MoS_2$ based nonvolatile memories have been demonstrated by worldwide researchers. The opening hysteresis in transfer characteristics have been revealed by different charge confining layer, for instance, few-layer graphene, $MoS_2$, metallic nanocrystal, hafnium oxide, and guanine. However, limited works built their nonvolatile memories using entirely of assembled 2D crystals. This is important in aspect view of large-scale manufacture and vertical integration for future memory device engineering. We report $WS_2$ based nonvolatile memories utilizing functional van der Waals heterostructure in which multi-layered graphene is encapsulated between $SiO_2$ and hexagonal boron nitride (hBN). We experimentally observed that, large memory window (20 V) allows to reveal high on-/off-state ratio (>$10^3$). Moreover, the devices manifest perfect retention of 13% charge loss after 10 years due to large graphene/hBN barrier height. Interestingly, the performance of our memories is drastically better than ever published work related to $MoS_2$ and black phosphorus flash memory technology.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.87.1-87.1
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• 2016

The unique properties of 2D materials significantly rely on the atomic structure and defects. Thus study at atomic scale is crucial for in-depth understanding of 2D materials and provides insights into its future applications. Using aberration-corrected transmission electron microscopes, atomic resolution imaging of individual atoms has been achieved even at a low kV. Ongoing optimization of aberration correction improves the spatial resolution better than angstrom and moreover boosts the contrast of light atoms. I present the recent progress of the study on the atomic structure and defects of monolayer and multilayer graphene, hBN and MoS2. Furthermore, the defect formation mechanisms of graphene, hexagonal boron nitride and MoS2 are discussed.

• Transactions of the Korean Society of Mechanical Engineers
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• v.14 no.6
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• pp.1533-1541
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• 1990

Cubic boron nitride (CBN) is known the second hardest material followed diamond and was provided industry as an abrasive grain in the late 1960's. Since the introduction of CBN, a large amount of research has been carried out to determine the best application condition for grinding operation. Despite the advantages in its characteristics, CBN has not yet gained full acceptance as more excellent abrasive grain than traditional one. The reason for this state is that the surface roughness ground by CBN is worse than by traditional one and dressing and truing is very difficult. This led user's resistance to the use of CBN as an abrasive grain. Present study is to investigate the cause of lower surface roughness ground by CBN single crystal abrasive grain comparing with traditional one.

• Journal of the Korean Society for Precision Engineering
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• v.20 no.9
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• pp.55-62
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• 2003

This paper investigates the micro-cutting of cemented carbides using PCD (polycrystalline diamond) and PCBN (polycrystalline cubic boron nitride) cutting tools are performed with SEM direct observation method. The purpose of this study is to make clear the cutting mechanism of cemented carbides and the fracture of WC particles at the plastic deformation zone in orthogonal micro-cutting. And also to achieve systematic understanding, the effect of machining parameter on chip formation and machined surface was studied, including cutting speed, depth of cut and various tool rake angle. Summary of the results are shown below. (1) Three type of chip formation process have been proposed by the results of the direct observation in orthogonal micro-cutting of cemented carbide materials. (2) From the whole observation of chip formation, primary WC particles are crushed and/or fine grained in the shearing deformation zone. A part of them are observed to collide directly with a cutting edge of tool by following the micro-cutting. (3) Surface finish, surface morphology and surface integrity is good to obtain by cutting with PCD cutting tool compared with PCBN. (4) The machined surface has the best quality near the low cutting speed of 10${\mu}m$/sec with a cutting depth of 10 ${\mu}m$ using 0$^\circ$ rake angle and 3$^\circ$ flank angle in this condition, but it was found that excessively low speed, for example the extent of 1 ${\mu}m$/sec, is not good enough to select for various reason.

• Coupled systems mechanics
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• v.6 no.3
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• pp.273-286
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• 2017

We present a simple and easy-to-implement lumped stiffness model to elucidate the load transfer mechanism among all individual tube shells and intertube van der Waals (vdW) interactions in transversely compressed multi-walled carbon nanotubes (CNTs). Our model essentially enables theoretical predictions to be made of the relevant transverse mechanical behaviors of multi-walled tubes based on the transverse stiffness properties of single-walled tubes. We demonstrate the validity and accuracy of our model and theoretical predictions through a quantitative study of the transverse deformability of double- and triple-walled CNTs by utilizing our recently reported nanomechanical measurement data. Using the lumped stiffness model, we further evaluate the contribution of each individual tube shell and intertube vdW interaction to the strain energy absorption in the whole tube. Our results show that the innermost tube shell absorbs more strain energy than any other individual tube shells and intertube vdW interactions. Nanotubes of smaller number of walls and outer diameters are found to possess higher strain energy absorption capacities on both a per-volume and a per-weight basis. The proposed model and findings on the load transfer and the energy absorption in multi-walled CNTs directly contribute to a better understanding of their structural and mechanical properties and applications, and are also useful to study the transverse mechanical properties of other one-dimensional tubular nanostructures (e.g., boron nitride nanotubes).

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.226-226
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• 2010

Boron Nitride (BN) doped GeSbTe films were grown by the ion beam sputtering deposition (IBSD). The in-situ sheet resistance data and the x-ray diffraction patterns showed the crystallization is suppressed due to the BN incorporation. The phase change speed in BN doped GeSbTe films were investigated using the static tester equipped with nanosecond pulsed laser. The phase change speed for BN doped GST films become faster than the corresponding values for an undoped GST film. The Johnson-Mehl-Avrami(JMA) plot and Avrami coefficient for laser crystallization showed that the change in growth mode during the laser crystallization is a most important factor for the phase change speed in the BN doped GST films. The JMA results and the atomic force microscopy (AFM) images indicate that the origin of the change in the crystalline growth mode is due to an increase in the number of initial nucleation sites which is produced by the incorporated BN. In addition, the retension properties for the laser writing/erasing are remarkably improved in BN doped GeSbTe films owing to the stability of the incorporated BN.