• Title/Summary/Keyword: Boron Nitride

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Effect of Boron Nitride on Mechanical Properties, Thermal and Electrical Conductivities of Carbon Fiber Reinforced Plastics (탄소섬유강화 복합소재의 열적, 전기적, 기계적 특성에 대한 질화붕소 첨가제의 효과)

  • Hong, Hyunkee;Bae, Kwak Jin;Yu, Jaesang
    • Composites Research
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    • v.33 no.3
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    • pp.153-160
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    • 2020
  • In this paper, hexagonal boron nitride (h-BN) particles were added between the sheets of prepreg, and the effect of on many properties of BN-embedded carbon fiber reinforced plastics was investigated. The amount of BN particles which corresponds with 0 to 15 wt% of total resin weight was used as an additive material. The tensile strength and the inter-laminar shear strength of BN-embedded CFRP samples were improved by maximally 13.6%, and 6.7%, respectively. The tendency changes of thermal, electrical conductivities and the morphology of cross-section of CFRPs were also observed. This study suggests the possibility of controlling the characteristics of carbon fiber-BN-epoxy composites to use for aerospace applications.

Effect of Moisture in a Vacuum Chamber on the Deposition of c-BN Thin Film using an Unbalanced Magnetron Sputtering Method (비대칭 마그네트론 스퍼터링 방법에 의한 질화붕소막의 증착시 반응실내의 초기 수분이 입방정질화붕소 박막의 형성에 미치는 영향)

  • Lee, Eun-Sook;Park, Jong-Keuk;Lee, Wook-Seong;Seong, Tae-Yeon;Baik, Young-Joon
    • Journal of the Korean Ceramic Society
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    • v.49 no.6
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    • pp.620-624
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    • 2012
  • The role of moisture remaining inside the deposition chamber during the formation of the cubic boron nitride (c-BN) phase in BN film was investigated. BN films were deposited by an unbalanced magnetron sputtering (UBM) method. Single-crystal (001) Si wafers were used as substrates. A hexagonal boron nitride (h-BN) target was used as a sputter target which was connected to a 13.56 MHz radiofrequency electric power source at 400 W. The substrate was biased at -60 V using a 200 kHz high-frequency power supply. The deposition pressure was 0.27 Pa with a flow of Ar 18 sccm - $N_2$ 2 sccm mixed gas. The inside of the deposition chamber was maintained at a moisture level of 65% during the initial stage. The effects of the evacuation time, duration time of heating the substrate holder at $250^{\circ}C$ as well as the plasma treatment on the inside chamber wall on the formation of c-BN were studied. The effects of heating as well as the plasma treatment very effectively eliminated the moisture adsorbed on the chamber wall. A pre-deposition condition for the stable and repeatable deposition of c-BN is suggested.

Hydro-thermo-mechanical biaxial buckling analysis of sandwich micro-plate with isotropic/orthotropic cores and piezoelectric/polymeric nanocomposite face sheets based on FSDT on elastic foundations

  • Rajabi, Javad;Mohammadimehr, Mehdi
    • Steel and Composite Structures
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    • v.33 no.4
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    • pp.509-523
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    • 2019
  • In the present work, the buckling analysis of micro sandwich plate with an isotropic/orthotropic cores and piezoelectric/polymeric nanocomposite face sheets is studied. In this research, two cases for core of micro sandwich plate is considered that involve five isotropic Devineycell materials (H30, H45, H60, H100 and H200) and an orthotropic material also two cases for facesheets of micro sandwich plate is illustrated that include piezoelectric layers reinforced by carbon and boron-nitride nanotubes and polymeric matrix reinforced by carbon nanotubes under temperature-dependent and hydro material properties on the elastic foundations. The first order shear deformation theory (FSDT) is adopted to model micro sandwich plate and to apply size dependent effects from modified strain gradient theory. The governing equations are derived using the minimum total potential energy principle and then solved by analytical method. Also, the effects of different parameters such as size dependent, side ratio, volume fraction, various material properties for cores and facesheets and temperature and humidity changes on the dimensionless critical buckling load are investigated. It is shown from the results that the dimensionless critical buckling load for boron nitride nanotube is lower than that of for carbon nanotube. It is illustrated that the dimensionless critical buckling load for Devineycell H200 is highest and lowest for H30. Also, the obtained results for micro sandwich plate with piezoelectric facesheets reinforced by carbon nanotubes (case b) is higher than other states (cases a and c).The results of this research can be used in aircraft, automotive, shipbuilding industries and biomedicine.

Computer modeling to forecast accurate of efficiency parameters of different size of graphene platelet, carbon, and boron nitride nanotubes: A molecular dynamics simulation

  • Farazin, Ashkan;Mohammadimehr, Mehdi
    • Computers and Concrete
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    • v.27 no.2
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    • pp.111-130
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    • 2021
  • In the present work, an extensive study for predicting efficiency parameters (��i) of various simulated nanocomposites including Polymethyl methacrylate (PMMA) as matrix and different structures including various sizes of graphene platelets (GPLs), single, double, and multi-walled carbon nanotubes (SWCNTs-DWCNTs-MWCNTs), and single and double-walled boron nitride nanotubes (SWBNNTs-DWBNNTs) are investigated. It should be stated that GPLs, carbon and boron nitride nanotubes (CNTs, BNNT) with different chiralities (5, 0), (5, 5), (10, 0), and (10, 10) as reinforcements are considered. In this research, molecular dynamics (MDs) method with Materials studio software is applied to examine the mechanical properties (Young's modulus) of simulated nanocomposite boxes and calculate η1 of each nanocomposite boxes. Then, it is noteworthy that by changing length (6.252, 10.584, and 21.173 nm) and width (7.137, 10.515, and 19.936) of GPLs, ��1, ��2, and ��3 approximately becomes (0.101, 0.114, and 0.124), (1.15, 1.22, and 1.26), (1.04, 1.05, and 1.07) respectively. After that efficiency parameters of SWCNTs, DWCNTs, and MWCNTs are calculated and discussed separately. Finally efficiency parameters of SWBNNTs and DWBNNTs with different chiralities by PMMA as matrix are determined by MD and discussed separately. It is known that the accurate efficiency parameters helps a lot to calculate the properties of nanocomposite analytically. In particular, the obtained results from this research can be used for analytical work based on the extended rule of mixture (ERM) in bending, buckling and vibration analysis of structure in future study.

Impact of Filler Aspect Ratio on Oxygen Transmission and Thermal Conductivity using Hexagonal Boron Nitride-Polymer Composites (필러 네트워크 형성 및 배향이 복합소재 열전도도와 산소투과도에 미치는 영향 고찰)

  • Shin, Haeun;Kim, Chae Bin
    • Composites Research
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    • v.34 no.1
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    • pp.63-69
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    • 2021
  • In order to develop an integrated heat dissipating material and gas barrier film for electronics, new polymer was designed and synthesized for preparing composites containing hexagonal boron nitride (hBN) filler. Depending on the size and content of the hBN filler, both thermal conductivity and oxygen transmission rate can be adjusted. The composite achieved a high thermal conductivity of 28.0 W·m-1·K-1 at most and the oxygen transmission rate was decreased by 62% compared to that of the filler free matrix. Effective filler aspect ratios could be estimated by comparing thermal conductivity and oxygen transmission rate with values predicted by theoretical models. Discrepancy on the aspect ratios extracted from thermal conductivity and oxygen transmission rate comparisons was also discussed.

Edge perturbation on electronic properties of boron nitride nanoribbons

  • K.L. Wong;K.W. Lai;M.W. Chuan;Y. Wong;A. Hamzah;S. Rusli;N.E. Alias;S. Mohamed Sultan;C.S. Lim;M.L.P. Tan
    • Advances in nano research
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    • v.15 no.5
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    • pp.385-399
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    • 2023
  • Hexagonal boron nitride (h-BN), commonly referred to as Boron Nitride Nanoribbons (BNNRs), is an electrical insulator characterized by high thermal stability and a wide bandgap semiconductor property. This study delves into the electronic properties of two BNNR configurations: Armchair BNNRs (ABNNRs) and Zigzag BNNRs (ZBNNRs). Utilizing the nearest-neighbour tight-binding approach and numerical methods, the electronic properties of BNNRs were simulated. A simplifying assumption, the Hamiltonian matrix is used to compute the electronic properties by considering the self-interaction energy of a unit cell and the interaction energy between the unit cells. The edge perturbation is applied to the selected atoms of ABNNRs and ZBNNRs to simulate the electronic properties changes. This simulation work is done by generating a custom script using numerical computational methods in MATLAB software. When benchmarked against a reference study, our results aligned closely in terms of band structure and bandgap energy for ABNNRs. However, variations were observed in the peak values of the continuous curves for the local density of states. This discrepancy can be attributed to the use of numerical methods in our study, in contrast to the semi-analytical approach adopted in the reference work.

An Essay of the Reinforcing Effect of BNNT and CNT: A Perspective on Interfacial Properties (BNNT와 CNT의 강화효과에 대한 복합재 계면물성 관점의 고찰)

  • Seunghwa Yang
    • Composites Research
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    • v.37 no.3
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    • pp.155-161
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    • 2024
  • Boron nitride nanotubes and carbon nanotubes are the most representative one-dimensional nanostructures, and have received great attention as reinforcement for multifunctional composites for their excellent physical properties. The two nanotubes have similar excellent mechanical stiffness, strength, and heat conduction properties. Therefore, the reinforcing effect of these two nanotubes is greatly influenced by the properties of their interface with the polymer matrix. In this paper, recent comparative studies on the reinforcing effect of boron nitride nanotubes and carbon nanotubes through experimental pull-out test and in-silico simulation are summarized. In addition, the conflicting aspect of the two different nanotubes with structural defects in their side wall is discussed on the viscoelastic damping performance of nanocomposites.

An In-silico Simulation Study on Size-dependent Electroelastic Properties of Hexagonal Boron Nitride Nanotubes (인실리코 해석을 통한 단일벽 질화붕소 나노튜브의 크기 변화에 따른 압전탄성 거동 예측연구)

  • Jaewon Lee;Seunghwa Yang
    • Composites Research
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    • v.37 no.2
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    • pp.132-138
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    • 2024
  • In this study, a molecular dynamics simulation study was performed to investigate the size-dependent electroelastic properties of single-walled boron nitride nanotubes(BNNT). To describe the elasticity and polarization of BNNT under mechanical loading, the Tersoff potential model and rigid ion approximation were adopted. For the prediction of piezoelectric constants and Young's modulus of BNNTs, piezoelectric constitutive equations based on the Maxwell's equation were used to calculate the strain-electric displacement and strain-stress relationships. It was found that the piezoelectric constants of BNNTs gradually decreases as the radius of the tubes increases showing a nonnegligible size effect. On the other hand, the elastic constants of the BNNTs showed opposites trends according to the equivalent geometrical assumption of the tubular structures. To establish the structure-property relationships, localized configurational change of the primarily bonded B-N bonded topology was investigated in detail to elucidate the BNNT curvature dependent elasticity.

Characterization of Ultrathin Gate Dielectrics for Nanoscale CMOS Applications

  • Yoon, Gi-Wan;Mai, Linh;Lee, Jae-Young
    • Journal of information and communication convergence engineering
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    • v.5 no.2
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    • pp.109-111
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    • 2007
  • In this paper, MOS devices with ultrathin gate dielectrics (5.5 nm) are characterized and compared with those with conventional oxides particularly for nanoscale CMOS applications. Nitrogen concentrations and profiles in the nitride gate dielectrics were obtained that will play an important role in improving both hot-carrier lifetime and resistance to boron penetration. This approach seems very useful for future nanoscale CMOS device applications.

Speckle Defect by Dark Leakage Current in Nitride Stringer at the Edge of Shallow Trench Isolation for CMOS Image Sensors

  • Jeong, Woo-Yang;Yi, Keun-Man
    • Transactions on Electrical and Electronic Materials
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    • v.10 no.6
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    • pp.189-192
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    • 2009
  • The leakage current in a CMOS image sensor (CIS) can have various origins. Leakage current investigations have focused on such things as cobalt-salicide, source and drain scheme, and shallow trench isolation (STI) profile. However, there have been few papers examining the effects on leakage current of nitride stringers that are formed by gate sidewall etching. So this study reports the results of a series of experiments on the effects of a nitride stringer on real display images. Different step heights were fabricated during a STI chemical mechanical polishing process to form different nitride stringer sizes, arsenic and boron were implanted in each fabricated photodiode, and the doping density profiles were analyzed. Electrons that moved onto the silicon surface caused the dark leakage current, which in turn brought up the speckle defect on the display image in the CIS.