• Transactions of the Korean Society of Mechanical Engineers A
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• v.31 no.1 s.256
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• pp.113-120
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• 2007

Design optimization of layered plates bonding process is conducted by considering uncertainties in a manufacturing process, in order to reduce the crack failure arising due to the residual stress at the surface of the adherent which is caused by different thermal expansion coefficients. Robust optimization is peformed to minimize the mean as well as its variance of the residual stress, while constraining the distortion as well as the instantaneous maximum stress under the allowable reliability limits. In this optimization, the dimension reduction (DR) method is employed to quantify the reliability such as mean and variance of the layered plate bonding. It is expected that the DR method benefits the optimization from the perspectives of efficiency, accuracy, and simplicity. The obtained robust optimal solution is verified by the Monte Carlo simulation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.387-390
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• 2002

SiC direct bonding technology is very attractive for both SiCOI(SiC-on-insulator) electric devices and SiC-MEMS(micro electro mechanical system) fields because of its application possibility in harsh environments. This paper presents pre-bonding techniques with variation of HF pre-treatment conditions for 2 inch SiC wafer direct bonding using PECVD(plasma enhanced chemical vapor deposition) oxide. The PECVD oxide was characterized by XPS(X-ray photoelectron spectrometer) and AFM(atomic force microscopy). The characteristics of the bonded sample were measured under different bonding conditions of HF concentration and an applied pressure. The bonding strength was evaluated by the tensile strength method. The bonded interface was analyzed by using IR camera and SEM(scanning electron microscope). Components existed in the interlayer were analyzed by using FT-IR(fourier transform infrared spectroscopy). The bonding strength was varied with HF pre-treatment conditions before the pre-bonding in the range of $5.3 kgf/cm^2$ to $15.5 kgf/cm^2$

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.164-167
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• 2002

SiC direct bonding technology is very attractive for both SiCOI(SiC-on-insulator) electric devices and SiC-MEMS applications because of its application possibility in harsh environments. This paper presents on pre-bonding according to HF pre-treatment conditions in SiC wafer direct bonding using PECVD oxide. The characteristics of bonded sample were measured under different bonding conditions of HF concentration, and applied pressure. The 3C-SiC epitaxial films grown on Si(100) were characterized by AFM and XPS, respectively. The bonding strength was evaluated by tensile strength method. Components existed in the interlayer were analyzed by using FT-IR. The bond strength depends on the HF pre-treatment condition before pre-bonding (Min : 5.3 kgf/$\textrm{cm}^2$∼Max : 15.5 kgf/$\textrm{cm}^2$).

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.2
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• pp.148-162
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• 1996

Bonding wires for high frequency device packaging have dominant parasitic inductances which limit the performance of semiconductor lasers. In this paper, the inductance sof bonding wires are claculated by the method of moments with incorporation of ohmic loss, and the wideband modulation characteristics are analyzed for ddifferent wire lengths and structures. We observed the modulation bandwidth for 1mm-length bonding wire lengths and structures. We observed the modulation bandwidth for 1mm-length bonding wire is 7 GHz wider than that for 2mm-length bonding wire. We also observed th estatic inductance calculation results in dispersive deviation of the parasitic inductance and the modulation characteristics from the wideband moment methods calculations. The angled bonding wire has much less parasitic inductance and improves the modulation bandwidth more than 6 GHz. This calculation resutls an be widely used for designing and packaging of high-speed semiconductor device.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.11a
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• pp.338-341
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• 1996

Anodic bonding is a key technology for micromechanical components. The main advantages of this method can be formed in a batch process, over large areas, and is permanent and irreversible. In this paper, the bonding was performed at temperatures ranging from 300 to 450 $^{\circ}C$, voltages 400 to 1000 V, and times 10 to 30 minutes. The sizes of the Si and the Pyrex #7740 glass were 6 mm $\times$6 mm, respectively. Bonding processes and voids were observed by the optical microscope, and the composition of the anodic bonding interface was analyzed by the SIMS. Optimum condition of the anodic bonding was at temperature above 40$0^{\circ}C$ without regard to voltage.

• Journal of the Semiconductor & Display Technology
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• v.4 no.2 s.11
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• pp.33-37
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• 2005

Bare-chip packaging becomes more popular along with the miniaturization of IT components. In this paper, we have studied flip-chip process, and developed automated bonding system. Among the several bonding method, NCP bonding is chosen and batch-type equipment is manufactured. The dual optics and vision system aligns the chip with the substrate. The bonding head equipped with temperature and force controllers bonds the chip. The system can be easily modified fer other bonding methods such as ACF.

• Advances in Computational Design
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• v.4 no.1
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• pp.33-41
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• 2019

In this study, 2-mm Al/Cu bimetallic laminates were produced using asymmetric roll bonding (RB) process. The asymmetric RB process was carried out with thickness reduction ratios of 10%, 20% and 30% and mismatch rolling speeds 1:1, 1:1.1 and 1:1.2, separately. For various experimental conditions, finite element simulation was used to model the deformation of bimetallic Al/Cu laminates. Specific attention was focused on the bonding strength and bonding quality of the interface between Al and Cu layers in the simulation and experiment. The optimization of mismatch rolling speed ratios was obtained for the improvement of the bond strength of bimetallic laminates during the asymmetric RB process. During the finite element simulation, the plastic strain of samples was found to reach the maximum value with a high quality bond for the samples produced with mismatch rolling speed 1:1.2. Moreover, the peeling surfaces of samples around the interface of laminates after the peeling test were studied to investigate the bonding quality by scanning electron microscopy.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2010.11a
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• pp.913-914
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• 2010

• Journal of the Semiconductor & Display Technology
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• v.6 no.1 s.18
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• pp.17-22
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• 2007

Recent new packages such as MCP(Multi-Chip Package), QDP(Quadratic Die Package) and DDP(Dual Die Package) have stack type configuration. This kind of multi-layer package is thicker than single layer package. So there is need for the low height looping technology in wirebonder to make these packages thinner. There is stiff zone above ball in wirebonder wire which is called HAZ(Heat Affect Zone). When making low height loop (below $80\;{\mu}m$) with traditional forward loop, stiff wire in HAZ(Heat Affected Zone) above ball is bended and weakened. So the traditional forward looping method cannot be applied to low height loop. SSB(stand-off stitch) wire bonding method was applied to many packages which require very low loops. The drawback of SSB method is making frequent errors at making ball, neck damage above ball on lead and the weakness of ball bonding on lead. The alternative looping method is BNL(ball neckless) looping technology which is already applied to some package(DDP, QDP). The advantage of this method is faster in bonding process and making little errors in wire bonding compared with SSB method. This paper presents the result of BNL looping technology applied in assembly house and several issues related to low loop height consistence and BNL zone weakness.

• Journal of the Korean Wood Science and Technology
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• v.16 no.3
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• pp.5-16
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• 1988

This experiment was executed to investigate the effect of activation of veneer surface by oxidizing agents, hydrogen peroxide and nitric acid, on bonding characteristics of Malas(Homalium foetidum Benth) plywood, in which the effects of these oxidizing agents amount, pretreatment time, and pressing time and temperatue on shear strength of the plywood were examined and discussed. In this research the activation of veneer surface by oxidants was effective in raising shear strength but the difference in shear strength was not observed between hydrogen peroxide and nitric acid treatment. Hydrogen peroxide treatment, however, seemed to be more profitable to industrial application because of its lower concentration and easier handling than nitric acid. The bonding method by lignin-phenol adhesive through surface activation revealed inferior shear strength to phenol- and urea-formaldehyde adhesive but superior water resistance to urea-formaldehyde adhesive and this bonding method, in addition, have the advantage of lower cost compared with phenol-formaldehyde adhesive, Therefore, this bonding method by lignin-phenol adhesive through surface activation seemed to economical in manufacturing of water-resistant wood panel materials in future.