• 반도체디스플레이기술학회지
• /
• 제3권3호
• /
• pp.5-9
• /
• 2004

A new wafer level packaging scheme is presented as an alternative to MEMS package. The proof-of-concept structure is fabricated and evaluated to confirm the feasibility of the idea for MEMS wafer level packaging. The scheme of this work is developed using an electroplated tin (Sn) solder. The critical difference over conventional ones is that wafers are laterally bonded by solder reflow after LEGO-like assembly. This lateral bonding scheme has merits basically in morphological insensitivity and its better bonding strength over conventional ones and also enables not only the hermetic sealing but also its electrical interconnection solving an open-circuit problem by notching through via-hole. The bonding strength of the lateral bonding is over 30 Mpa as evaluated under shear and the hermeticity of the encapsulation is 2.0$\times10^{-9}$mbar.$l$/sec as examined by pressurized Helium leak rate. Results show that the new scheme is feasible and could be an alternative method for high yield wafer level packaging.

• 대한전기학회논문지:전기물성ㆍ응용부문C
• /
• 제49권11호
• /
• pp.635-639
• /
• 2000

In this paper, a new idea about ultra-clean aligning and mounting method of FED spacers was introduced. The glass-to -glass electrostatic bonding process was employed in order to bond the micro-structures of spacers to black matrix area formed on an FED anode substrate. It is possible to get adhesive-free bonding interface and well-aligned spacer array on an FED anode substrate with a ${\pm}5{\mu}m$ accuracy. Finally, I inch-sized FED panel was demonstrated to make sure of its applicability to FED panel fabrication.

• 한국세라믹학회지
• /
• 제20권1호
• /
• pp.70-78
• /
• 1983

This paper discusses the application of Si-Borosilicate glass sealing to a new sealing method which utilizes a large electrostatic field to pormote bound formation at relatively low temperature. Bonding mechanism and the effect of bonding time bonding temperature glass thickness and surface roughness on the bond strength were investigated. Application of a de voltage across bonded specimen gradually produced a layer of glass adjacent silicon which was depleted of mobile ions. As a consequence a n increasingly larger fraction of the applied voltage appeared across the depleted region and very large electric field resulted This field accompanyed by large electrostatic force acted as driving force the of strong bond. And stronger bond was formed with increasing bonding time and temperature. A low temperature preoxidation is advantageous for the Si surface having a rougher surface finish that 1 microinch.

• 한국세라믹학회지
• /
• 제28권8호
• /
• pp.654-660
• /
• 1991

Stabilized Zirconia (3 mol % Yttria, 3Y-TZP) was joined with intermetallic compound NiTi which has similar thermal expansion coefficient. The optimum bonding condition was determined by the Taguchi Method. Under the optimum bonding condition, the 4-point bending strength was as high as 400 MPa. bonding interfaces were examined by optical microscope, SEM, and TEM; reaction products were identified by XRD and TEM, The relationship between products and strength was examined.

• 소성∙가공
• /
• 제29권6호
• /
• pp.307-315
• /
• 2020

The cemented carbide and stainless steel were bonded using a hot-vacuum brazing method to analyze the bonding interface. Since it is suitable for the hot vacuum brazing, nickel metal was used as a binder among the main components of the cemented carbide, and a new cemented carbide material was developed by adjusting the alloy composition. The paste, which is one of the important factors affecting the hot vacuum brazing bonding, was able to improve brazing adhesion by mixing solder as Ni powder and a binder as an organic compound at an appropriate ratio. Division of the stainless steel yielded a dense brazing result. This study elucidated the interfacial characteristics of wear-resistant parts by bonding stainless steel and cemented carbide via hot vacuum brazing.

• 대한소아치과학회지
• /
• 제30권4호
• /
• pp.581-592
• /
• 2003

본연구는 유치와 영구치의 우식상아질을 제거하는 방법에 따른 상아질표면의 변화와 산부식양상, 혼성층의 양상, 그리고 이들이 상아질에 대한 복합레진의 전단결합강도에 미치는 영향을 평가할 목적으로 시행되었다. 92개의 유구치와 92개의 영구 구치를 준비하여 상아질 표면을 노출시키고 인공우식을 유발시켰다. 이중 32개의 유구치와 32개의 영구구치는 $Carisolv^{TM}$과 bur로 삭제후 상아질표면을 SEM관찰하였으며 나머지 치아에서는 레진-상아질간 전단결합강도를 측정하였다. 두가지 접착시스템(Single bond system, self-etching bonding system)과 한 종류의 레진(Z250, 3M)을 사용하였으며 다음과 같은 결과를 얻었다. 1. $Carisolv^{TM}$의 우식치질 제거효과는 영구치보다 유치에서 더 우수하였으며, bur로 제거한 경우보다 더 거친 상아질 표면이 관찰되었다. 2. 산부식처리한 경우 유치와 영구치 모두 우식제거방법과 관계없이 도말층이 제거된 양상을 보였다. 3. Single bond system을 이용한 경우 두터운 $2-4{\mu}m$의 혼성층과 $10-15{\mu}m$의 adhesive layer가 관찰된 반면, self-etching bonding system에서는 비교적 얇은($1-2{\mu}m$) 혼성층만이 형성되었다. 4. 전단결합강도는 유치와 영구치 모두 우식제거방법에 관계없이 Single bonding agent를 적용한 경우에 self-etching bonding agent를 적용한 군보다 유의하게 높게 나타났다(P<0.05). 5. $Carisolv^{TM}$와 self-etching bonding agent 처리군에서 bur와 self-etching system 처리군보다 다소 높은 전단결합강도를 보였으나 유의성은 없었다(P>0.05).

• 마이크로전자및패키징학회지
• /
• 제18권2호
• /
• pp.63-67
• /
• 2011

본 연구에서는 interlayer로 Sn을 사용하여 경성 인쇄 회로 기판(Rigid printed circuit board, RPCB)과 연성 인쇄 회로 기판(Flexible printed circuit board, FPCB) 간의 열압착 접합(Thermo-compression bonding) 조건을 최적화하는 연구를 진행하였다. 접합에 앞서 FPCB를 다양한 온도와 시간조건 하에서 Sn이 용융된 솔더 배스 안에서 침지(Dipping) 공정을 수행하였고, 열압착법을 이용하여 FPCB와 RPCB의 접합을 수행하였다. FPCB/RPCB 접합부의 접합 강도를 $90^{\circ}$ 필 테스트(Peel test)를 이용하여 측정하였다. 그 결과 $270^{\circ}C$, 1s의 침지 조건에서 FPCB의 polyimide(PI)와 Cu 전극 계면에서 파단되고, 이때, 최대 박리 강도를 얻었다. FPCB와 RPCB의 열압착 접합시 주요 변수로는 압력, 온도, 시간이 있으며, 특히 온도의 증가에 따라 접합 강도가 크게 증가하였다. 접합부 계면 관찰 결과, 접합 온도와 시간이 증가함에 따라 접합 면적이 증가하였으며, 이로 인해 접합 강도가 증가하는 것으로 사료된다. 필 테스트 과정에서 나타나는 F-x(Forcedisplacement) 곡선을 토대로 산출한 파괴 에너지와 접합 강도는 $280^{\circ}C$, 10s의 접합 조건에서 가장 높게 나타났으며, 이 조건이 최적 접합 조건으로 도출되었다.

• 전자공학회논문지A
• /
• 제33A권3호
• /
• pp.140-151
• /
• 1996

In this paper, we analyze the variations of thermal characteristics of LD (laser diode) arrays packaged by a flip-chip bonding method. When we simulate the temperature distribution in LD arrays with a BEM (boundary element method) program coded in this paper, we find that thermal crosstalks in LD arrays packaged by the flip-chip bonding method increases by 250-340% compared to that in LD arrays packaged by previous methods. In the LD array module packaged by the flip-chip bonding technique without TEC (thermo-electric cooler), the important parameter is the absolute temperature of the active layer increased due cooler), the important parameter is the absolute temperature of th eactiv elayers of LD arrays to thermal crosstalk. And we find that the temperature of the active layers of LD arrays increases up to 125$^{\circ}C$ whenall four LDs, without a carefully designed heatsink, are turned on, assuming the power consumption of 100mW from each LD. In order to reduce thermal crosstalk we propose a heatsink sturcture which can decrease the temeprature at the active layer by 40%.

• 센서학회지
• /
• 제9권2호
• /
• pp.134-140
• /
• 2000

Si기판 직접접합기술은 전자소자 및 MEMS에의 응용에 있어 대단히 매력적인 기술이다. 본 논문에서는 Si기판 직접접합에 있어서 HF 전처리 조건에 따른 초기접합에 관하여 서술한다. 접합된 시료들의 특성은 HF 농도, 인가하중과 같이 각각의 접합조건하에서 분석하였으며, 접합력은 인장강도측정법에 의해 평가하였다. 계면상의 결합성분과 표면의 거칠기는 FT-IR과 AFM을 사용하여 평가하였다. HF 전처리 후 Si기판 표면상의 Si-F결합은 DI water에 세정하는 동안 Si-OH로 재배열되며, 결과적으로 hydrophobic 기판은 Si-OH$\cdots$(HOH$\cdots$HOH$\cdots$HOH)$\cdots$OH-S의 수소결합되어 hydrophilic화된다. 초기접합력은 초기접합전의 HF 전처리 조건에 의존한다. (최소 : $2.4kgf/cm^2{\sim}$최대 : $14.9kgf/cm^2$)

• 한국생산제조학회지
• /
• 제22권4호
• /
• pp.717-722
• /
• 2013

In this study, we investigated the design of a wire wedge bonding ultrasonic tool horn using finite element method (FEM) simulations. The proposed method is based on an initial design estimate obtained by FEM analysis. An ultrasonic excitation causes various vibrations of a transducer horn and capillary. A simulated ultrasonic transducer horn and resonator are then built and characterized experimentally using a laser interferometer and electrical impedance analyzer. The vibration characteristics and resonance frequencies close to the exciting frequency are identified using ANSYS. FEM analysis is developed to predict the resonance frequency of the ultrasonic horn and use it in the optimal design of an ultrasonic horn mode shape.