• Korean Journal of Construction Engineering and Management
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• v.14 no.6
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• pp.70-77
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• 2013

Construction industry is broadly agreed as one of the most important sectors of any economy around the world. In this paper, time series data of Korean construction industry and Korean economy are examined. The Bon's proposition will be inspected for Korean context using both cross-sectional and longitudinal analyses. The analysis of the longer than four decades national account statistic of the Korean macro economy verify Bon's proposition of an inverted U-shaped relationships. The verified U-shaped relationships for Korean context exist not only in terms of the construction share in total GDP but also in terms of total construction volume as an economy develops from LDC to NIC and then to AIC eventually with time. The results of the thesis show that the contribution towards the macro economy has varied across different stages of development.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.344-344
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• 2014

Transparent amorphous oxide semiconductors such as a In-Ga-Zn-O (a-IGZO) have advantages for large area electronic devices; e.g., uniform deposition at a large area, optical transparency, a smooth surface, and large electron mobility >10 cm2/Vs, which is more than an order of magnitude larger than that of hydrogen amorphous silicon (a-Si;H).1) Thin film transistors (TFTs) that employ amorphous oxide semiconductors such as ZnO, In-Ga-Zn-O, or Hf-In-Zn-O (HIZO) are currently subject of intensive study owing to their high potential for application in flat panel displays. The device fabrication process involves a series of thin film deposition and photolithographic patterning steps. In order to minimize contamination, the substrates usually undergo a cleaning procedure using deionized water, before and after the growth of thin films by sputtering methods. The devices structure were fabricated top-contact gate TFTs using the a-IGZO films on the plastic substrates. The channel width and length were 80 and 20 um, respectively. The source and drain electrode regions were defined by photolithography and wet etching process. The electrodes consisting of Ti(15 nm)/Al(120 nm)/Ti(15nm) trilayers were deposited by direct current sputtering. The 30 nm thickness active IGZO layer deposited by rf magnetron sputtering at room temperature. The deposition condition is as follows: a rf power 200 W, a pressure of 5 mtorr, 10% of oxygen [O2/(O2+Ar)=0.1], and room temperature. A 9-nm-thick Al2O3 layer was formed as a first, third gate insulator by ALD deposition. A 290-nm-thick SS6908 organic dielectrics formed as second gate insulator by spin-coating. The schematic structure of the IGZO TFT is top gate contact geometry device structure for typical TFTs fabricated in this study. Drain current (IDS) versus drain-source voltage (VDS) output characteristics curve of a IGZO TFTs fabricated using the 3-layer gate insulator on a plastic substrate and log(IDS)-gate voltage (VG) characteristics for typical IGZO TFTs. The TFTs device has a channel width (W) of $80{\mu}m$ and a channel length (L) of $20{\mu}m$. The IDS-VDS curves showed well-defined transistor characteristics with saturation effects at VG>-10 V and VDS>-20 V for the inkjet printing IGZO device. The carrier charge mobility was determined to be 15.18 cm^2 V-1s-1 with FET threshold voltage of -3 V and on/off current ratio 10^9.

• Korean Journal of Ecology and Environment
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• v.46 no.2
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• pp.215-224
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• 2013

We clarified the background for establishment of vegetation by comparing the spatial distribution maps of vegetation and substrate on a gravel bar in the Bangtae stream located on Inje-gun of Gangwon-do, the central eastern Korea. The total vegetation coverage was higher in the interior and lower in the marginal parts of the gravel bar. Spatial distribution of vegetation on the longitudinal section of the gravel bar tended to be arranged in the order of shrub, subtree, and tree dominated vegetation types from the front (upstream) toward the rear (downstream) parts. Coverage of the herbaceous plants was higher in the central and rear parts and lower in the front and right parts of the gravel bar. Vegetation height was higher in the rear part and became lowered as move toward the front part. Substrate was distributed in the order of boulder, gravel, sand, and boulder from the front toward the rear parts. Ordination of stands based on vegetation data was arranged in the order of annual plant, perennial herb, shrub, and tree dominated vegetation as move from the right to the left parts on the axis I. Species richness was higher in the order of Pinus densiflora community, Phragmites japonica community, Salix gracilistyla community, Fraxinus rhynchophylla community, annual plant dominated vegetation, and Prunus padus for. padus community based on the species rank-abundance curve. The order based on the Shannon's index was some different; diversity of Phragmites japonica community and Salix gracilistyla community, which showed higher dominance degree, were low differently from species richness. In conclusion, it was evaluated that the gravel bar newly established toward the upstream and vegetation dynamics of the gravel bar seemed to follow ecosystem mechanisms of succession. As were shown in the above results, the Bangtae stream corresponded to the upstream and thereby particle size of substrate was big. Therefore, they move by rolling and are accumulated for the upstream. Vegetation types were arranged in the order of woodland, shrub-land and grassland from the rear toward the front parts of the gravel bar and thereby reflected the formation process of the bar. However, the gravel bar is disturbed frequently by not only the running water but also the suspended sand as the dynamic space. Such disturbances cause habitat diversity and consequently led to high biodiversity.