• Journal of the Semiconductor & Display Technology
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• v.16 no.4
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• pp.86-90
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• 2017

$Tb^{3+}$ or $Eu^{3+}$ or $Ce^{3+}$-doped $CaYAlO_4$ phosphor were synthesized by solid-state method. $CaYAlO_4:Tb^{3+}$ is shown that the $Tb^{3+}$-doping concentration has a significant effect on the $^5D_4/^5D_3{\rightarrow}7F_J$ (J=6,...,0) emission intensity of $Tb^{3+}$. The $CaYAlO_4:Tb^{3+}$ phosphors show tunable photoluminescence from blue to yellow with the change of doping concentration of $Tb^{3+}$ ions. The $CaYAlO_4:Eu^{3+}$ phosphors exhibit a red-orange emission of $Eu^{3+}$ corresponding to $^5D_0$, $_{1,2}{\rightarrow}^7F_J$ (J=4,...,0) transitions. The $CaYAlO_4:Ce^{3+}$ phosphors show a blue emission due to $Ce^{3+}$ ions transitions from the 5d excited state to the $^2F_{5/2}$ and $^2F_{7/2}$ ground states. The decay time of $CaYAlO_4:Tb^{3+}$ phosphors decrease from 1.33 ms to 0.97 ms as $Tb^{3+}$ concentration increases from 0.1 mol% to 7 mol%. The decay time of $CaYAlO_4:Eu^{3+}$ phosphors increase from 0.94 ms to 1.17 ms as $Eu^{3+}$ concentration increases from 1 mol% to 9 mol%.

• Journal of the Korean Society of Radiology
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• v.15 no.3
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• pp.391-399
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• 2021

Eu²⁺ doped polyphosphate NaSr(PO₃)₃ blue-emitting phosphors were synthesized by the conventional solid state method in a reductive atmosphere. The phase formation of NaSr(PO₃)₃ phosphors were characterized by using the X-ray powder diffraction (XRD) measurement. The photoluminescence emission and excitation spectra of the NaSr(PO₃)₃:Eu²⁺ phosphor, and decay curves were measured. Under the near-UV excitation, the phosphor exhibits a band emission around 420 nm assigned to the 4f⁶5d→f7(8S^7/2) transition of Eu²⁺. The temperature dependent emission spectra and decay curves were measured to elevate the thermal properties of the Eu²⁺ doped phosphors. The as-prepared NaSr(PO₃)₃:Eu²⁺ phosphors show a strong temperature dependent performance, which can serve as a promising temperature sensor.

• Korean Chemical Engineering Research
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• v.44 no.3
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• pp.284-288
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• 2006

$(Ca,Sr)_{2-y}MgSi_2O_7:Eu^{2+}{_y}$ (CMS) phosphor particles were prepared by using a spray pyrolysis process. The luminescent property was optimized by changing the content of Eu and the post-treatment temperature. The luminescence characteristics were also monitored with changing the ratio of Ca to Sr. The pure tetragonal $Ca_2MgSi_2O_7$ or $Sr_2MgSi_2O_7$ particles were obtained when the post-treatment temperature was over $1,000^{\circ}C$. The highest emission intensity of CMS particles were achieved when the concentration (y) of Eu and the treatment temperature were 0.05 and $1,250^{\circ}C$,respectively. The emission wavelength $({\lambda}_{max})$ of ${(Ca_{1-x},Sr_x)}_{1.95}MgSi_2O_7:{Eu^{2+}}_{0.05}$ was gradually shifted from 524 nm to 456 nm with increasing the content of Sr due to the reduction of crystal field strength. The emission intensity and its width of $Sr_2MgSi_2O_7:Eu$ was greatly enhanced by substituting Ca of less than 10 mol％ for Sr without any significant peak shift. The morphology of as-prepared particles was spherical, but changed to irregular-shaped one after the post treatment at the temperature range from 900 at $1,300^{\circ}C$.

• Current Optics and Photonics
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• v.3 no.6
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• pp.590-596
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• 2019

To improve the color gamut of a liquid-crystal display (LCD), we propose a bandpass filter that is added to the backlight unit to optimize the backlight spectrum. The bandpass filter can only transmit red, green and blue light in the visible range, while reflecting the unwanted light. We study the optical properties of the bandpass filter using the transfer-matrix method, and the effect of the bandpass filter on the color gamuts of LCDs is also investigated. When a bandpass filter based on a 5-layer configuration comprising low and high refractive indices ((HL)²H) is used in phosphor-converted white-light-emitting diode (pc-WLED), K₂SiF₆:Mn⁴⁺ (KSF-LED), and quantum-dot (QD) backlights, the color gamuts of the LCDs improve from 72% to 95.3% of NTSC, from 92% to 106.7% of NTSC, and from 104.3% to 112.2% of NTSC respectively. When the incident angle of light increases to 30°, the color gamuts of LCDs with pc-WLED and KSF-LED backlights decrease by 2.9% and 1% respectively. For the QD backlight, the color gamut almost does not change. When the (HL)²H structure is coated on the diffusion film, the color gamut can be improved to 92.6% of NTSC (pc-WLED), 105.6% of NTSC (KSF-LED), and 111.9% of NTSC (QD). The diffusion film has no obvious effect on the color gamut. The results have an important potential application in wide-color-gamut LCDs.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.386-386
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• 2012

For white light emitting diode (LED) applications, it has been reported that Y3Al5O12:Ce3+ (YAG:Ce) in nano-sized phosphor performs better than it does in micro-sized particles. This is because nano-sized YAG:Ce can reduce internal light scattering when coated onto a blue LED surface. Recently, there have been many reports on the synthesis of nano-sized YAG particles using bottom-up method, such as co-precipitation method, sol-gel process, hydrothermal method, solvothermal method, and glycothermal method. However, there has been no report using top-down method. Top-down method has advantages than bottom-up method, such as large scale production and easy control of doping concentration and particle size. Therefore, in this study, nano-sized YAG:Ce phosphors were synthesized by a high energy beads milling process with varying beads size, milling time and milling steps. The beads milling process was performed by Laboratory Mill MINICER with ZrO2 beads. The phase identity and morphology of nano-sized YAG:Ce were characterized by X-ray powder diffraction (XRD) and field-emission scanning electron microscopy (FESEM), respectively. By controlling beads size, milling time and milling steps, we synthesized a size-tunable and uniform nano-sized YAG:Ce phosphors which average diameters were 100, 85 and 40 nm, respectively. After milling, there was no impurity and all of the peaks were in good agreement with YAG (JCPDS No. 33-0040). Luminescence and quantum efficiency (QE) of nano-sized YAG:Ce phosphors were measured by fluorescence spectrometer and QE measuring instrument, respectively. The synthesized YAG:Ce absorbed light efficiently in the visible region of 400-500 nm, and showed single broadband emission peaked at 550 nm with 50% of QE. As a result, by considering above results, high energy beads milling process could be a facile and reproducible synthesis method for nano-sized YAG:Ce phosphors.

• Journal of the Korean Chemical Society
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• v.46 no.1
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• pp.69-75
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• 2002

The $Y_{1-x}(P_{1-y-z}Nb_yV_z)O_4:Eu_x$ blue and red emitting phosphors were prepared by the combinatorial chemistry method. The combinatorial library was designed to investigate the luminescence of the $Y_{1-x}(P_{1-y-z}Nb_yV_z)O_4:Eu_x$ phosphors under 254 nm and 147 nm excitations. In addition, the crystallinity and morphology of phosphors were checked by XRD and SEM. Based on the results from the combinatorial screenings, luminescent properties of phosphors are strongly dependent on the concentration of doping metal ions. It was found that a new phosphor $Y_{0.88}(P_{0.92}Nb_{0.05}V_{0.03})O_4:Eu_{0.12}$ shows excellent luminescent efficiency comparing to the $Y_{0.88}PO_4:Eu_{0.12}$ red phosphor.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.174-175
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• 2012

(In, Ga) N-based III-nitride semiconductor materials have been viewed as the most promising materials for the applications of blue and green light emitting devices such as light-emitting diodes (LEDs) and laser diodes. Although the InGaN alloy can have wide range of visible wavelength by changing the In composition, it is very hard to grow high quality epilayers of In-rich InGaN because of the thermal instability as well as the large lattice and thermal mismatches. In order to avoid phase separation of InGaN, various kinds of structures of InGaN have been studied. If high-quality In-rich InGaN/GaN multiple quantum well (MQW) structures are available, it is expected to achieve highly efficient phosphor-free white LEDs. In this study, we proposed a novel InGaN double hetero-structure grown on GaN nano-pyramids to generate broad-band red-color emission with high quantum efficiency. In this work, we systematically studied the optical properties of the InGaN pyramid structures. The nano-sized hexagonal pyramid structures were grown on the n-type GaN template by metalorganic chemical vapor deposition. SiNx mask was formed on the n-type GaN template with uniformly patterned circle pattern by laser holography. GaN pyramid structures were selectively grown on the opening area of mask by lateral over-growth followed by growth of InGaN/GaN double hetero-structure. The bird's eye-view scanning electron microscope (SEM) image shows that uniform hexagonal pyramid structures are well arranged. We showed that the pyramid structures have high crystal quality and the thickness of InGaN is varied along the height of pyramids via transmission electron microscope. Because the InGaN/GaN double hetero-structure was grown on the nano-pyramid GaN and on the planar GaN, simultaneously, we investigated the comparative study of the optical properties. Photoluminescence (PL) spectra of nano-pyramid sample and planar sample measured at 10 K. Although the growth condition were exactly the same for two samples, the nano-pyramid sample have much lower energy emission centered at 615 nm, compared to 438 nm for planar sample. Moreover, nano-pyramid sample shows broad-band spectrum, which is originate from structural properties of nano-pyramid structure. To study thermal activation energy and potential fluctuation, we measured PL with changing temperature from 10 K to 300 K. We also measured PL with changing the excitation power from 48 ${\mu}W$ to 48 mW. We can discriminate the origin of the broad-band spectra from the defect-related yellow luminescence of GaN by carrying out PL excitation experiments. The nano-pyramid structure provided highly efficient broad-band red-color emission for the future applications of phosphor-free white LEDs.

• Journal of the Korean institute of surface engineering
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• v.53 no.4
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• pp.131-137
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• 2020

A series of Dy³⁺, Sm³⁺, and Dy³⁺/Sm³⁺ doped Gd₂WO₆ phosphors were synthesized by the conventional solid-state reaction. The X-ray diffraction patterns revealed that all of the diffraction peaks could be attributed to the monoclinic Gd₂WO₆ crystal structure, irrespective of the type and the concentration of activator ions. The photoluminescence (PL) excitation spectra of Dy³⁺-doped Gd₂WO₆ phosphors contained an intense charge transfer band centered at 302 nm in the range of 240-340 nm and two weak peaks at 351 and 386 nm. Under an excitation wavelength of 302 nm, the PL emission spectra consisted of two strong blue and yellow bands centered at 482 nm and 577 nm. The PL emission spectra of the Sm³⁺-doped Gd₂WO₆ phosphors had a series of three peaks centered at 568 nm, 613 nm, and 649 nm, corresponding to the ⁶G_5/2 → ⁶H_5/2, ⁶G_5/2 → ⁶H_9/2, and ⁶G_5/2 → ⁶H_11/2 transitions of Sm³⁺, respectively. The PL emission spectra of the Dy³⁺- and Sm³⁺-codoped Gd₂WO₆ phosphors showed the blue and yellow emission lines originating from the ⁴F_9/2 → ⁶H_15/2 and ⁴F_9/2 → ⁴H_13/2 transitions of Dy³⁺ and reddish-orange and red emission bands due to the ⁴G_5/2 → ⁶H_7/2 and ⁴G_5/2 → ⁶H_9/2 transitions of Sm³⁺. As the concentration of Sm³⁺ increased from 1 to 15 mol%, the intensities of two PL spectra emitted by the Dy³⁺ ions gradually decreased, while those of the three emission bands due to the Sm³⁺ ions slowly increased, thus producing the color change from white to orange. The CIE color coordinates of Gd₂WO₆:5 mol% Dy³⁺, 1 mol% Sm³⁺ phosphors were (0.406, 0.407), which was located in the warm white light region.