• 한국정보디스플레이학회:학술대회논문집
• /
• 2000.01a
• /
• pp.207-208
• /
• 2000

The temporal response of the electroluminescence (EL) has been studied in the organic electroluminescent devices fabricated with a vacuum-deposited poly(p-phenylene) (PPP) thin film upon the application of a rectangular driving voltage. The blue EL emission arises with a delay time of several hundred nanoseconds and then saturates with the rise time of less than microsecond. The EL delay time is considered as the transit time of holes in the PPP thin film since the hole mobility is much larger than the electron mobility in PPP. The hole mobility is estimated to be ${\sim}$ $1{\times}10^{-5}$ $cm^2/Vs$ in the vacuum-deposited PPP film.

• Journal of the Optical Society of Korea
• /
• v.1 no.1
• /
• pp.10-14
• /
• 1997

Single pulse laser excitation at 656 nm and successive pulse excitation at 635.2 and 648.4 nm produced blue emission at 480 nm by two-step upconversion process in Tm/sup 3+/:LaF/sub 3/. The excited-state absorption cross-section of the /sup 3/F/sub 4/ to /sup 1/G/sub 4/ transition was estimated by a looping mechanism with cross-relaxation processes. The dynamics of up-conversion andthe possibility of the photon avalanche by a pulse laser excitation were studied by numerical simulation with the rate equation model.

• Journal of the Semiconductor & Display Technology
• /
• v.4 no.3 s.12
• /
• pp.17-22
• /
• 2005

LED lamp was designed by the serial-parallel integration of LED chips in metal-interconnection. The 7 $4.5{\times}4.5\;in^{2}$ masks were designed with the contact type of chrome-no mirror?dark. The white epitaxial thin film was grown by metal-organic chemical vapor deposition. The active layers were consisted with the serial order of multi-quantum wells for blue, green and red lights. The fabricated LED chip showed the electroluminescence peaked at 450, 560 and 600 nm. For the current injection of 20 mA, the operating voltage was measured to 4.25 V and the optical emission power was obtained to 0.7 $\mu$W.

• Korean Journal of Crystallography
• /
• v.11 no.3
• /
• pp.151-156
• /
• 2000

Yb/YAG single crystals were grown from the melt composition of Y/sub 1-x/Yb/sub x/)₃Al/sub 5/O/sub 12/ where x equal to 5, 10, 15, 20, 25, 33, 50, 75 and 100 at % by floating zone method. Optimum growth parameters to get high quality single crystals were 3.5 mm/h of growth rate and 20 rpm of rotation rate under the N₂ atmosphere. After the growth, color of crystals was appeared with pale blue due to the lack of oxygen, but it was disappeared after annealing at 1450℃ for 2 hr. Absorption coefficients were linearly increased depending on the concentration of Yb/sup 3+/ ions. Broad emission band was measured in the range of 1020 to 1050 nm with the peak intensity at 1031 nm and 1051 nm because of ²F/sub 5/2/(1)→²F/sub 7/2/(3) and ²F/sub 5/2/(1)→²F/sub 7/2/(4) transition respectively. When Yb/sup 3+/ ions were substituted with high rates, there were tendency to decrease the measured fluorescent lifetime for Yb ions depending on the concentration of Yb/sup 3+/ ions.

• Journal of the Semiconductor & Display Technology
• /
• v.6 no.2 s.19
• /
• pp.65-68
• /
• 2007

High brightness and long persistent luminescence phosphor $CaAl_2O_4:Eu^{2+}$ was prepared with varying $Eu^{2+}$ concentration by solid state reaction technique. Synthesized materials were investigated by powder X-ray diffractometer (XRD), SEM, TEM, photoluminescence excitation and emission spectra. Broad band UV excited luminescence of the $CaAl_2O_4:Eu^{2+}$ was observed in the blue region (${\lambda}_{max}\;=\;440\;nm$) due to transitions from the $4f^65d^1$ to the $4f^7$ configuration of the $Eu^{2+}$ ion. The decay time of the persistence indicated that the persistent luminescence phosphor has bright phosphorescence and maintains a long duration. These materials have great potential for outdoor night time displays.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.06a
• /
• pp.100-101
• /
• 2008

We have developed low voltage driving white organic light emitting diode with new electron transport layer. The with light emission was realized with a yellow dopant, rubrene and blue-emitting DPVBi layer. The new electron transport layer results in very high current density at low voltage, causing a reduction of driving voltage. The device with new electron transport layer shows a brightness of 1000 cd/m2 at 4.3 V.

• Proceedings of the KIEE Conference
• /
• 2006.10a
• /
• pp.89-90
• /
• 2006

We synthesized emissive materiaJs, nameJy $Zn(HPB)_2$. The fundamentaJ structures of the OLEDs were ITO / NPB (40 nm) $Zn(HPB)_2$ (40 nm) / $Alq_3$:DCJTB (20, 30, or 40 nm) / LiF / AI. We varied the thickness of $Alq_3$:DCJTB from 20 nm to 40nm. We measured current density-voJtage and luminance-voJtage characteristics at room temperature. When the thickness of the Alq3:DCJTB layer was 40 nm, white emission is achieved. The CIE coordinates are (0.32, 0.33) at an applied voltage of 14V.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2009.10a
• /
• pp.243-245
• /
• 2009

The single phase $Ba_2SiS_4$ doped with $Eu^{2+}$ was successfully synthesized by direct sulfurization of an oxide precursor prepared by a spray drying method using a novel water soluble silicon compound, which remains soluble in a given aqueous solution. The intensity of the emission peak of thus obtained $Ba_2SiS_4:Eu^{2+}$ was 1.75 times larger than that of a sample prepared by a solid state reaction method, and it approached 106% compared to one of the best commercially available YAG:$Ce^{3+}$ phosphor.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2007.08a
• /
• pp.651-654
• /
• 2007

Anthracene derivatives, 9,10trimethylsilylanthr - acene(SA) and bis(2-phenylethynyl)trimethylsilyl anthracene(Si-BPEA) were synthesized and their emission properties were studied with UV and PL spectrometers. The PL maxima of anthracene, SA, bis(2-phenylethynyl)anthracene (BPEA), Si-BPEA were obtained at 401, 438, 475, 478nm, respectively. The electro-optical properties OLED devices made with these anthracene derivatives were discussed.

• Proceedings of the KIEE Conference
• /
• 2000.07c
• /
• pp.1739-1741
• /
• 2000

DC current density-voltage and impedance spectroscopy studies have been performed on indium-tin-oxide(ITO)/para-sexiphenyl(6p)/aluminium organic electroluminescent device. The device exhibited a blue color emission, The turn-on voltage of the device is observed at 5V from the current density-voltage measurements. The impedance spectroscopy measurements show that a resonance frequency shift with applied DC bias is observed and a single semi-circle Cole-Cole plot is confirmed. The bias-dependent bulk resistance and bias-independent bulk capacitance is observed.