• Journal of Digital Convergence
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• v.10 no.7
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• pp.267-272
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• 2012

Overcoming harsh light environment, as well as increased growth of crops even in high-quality production can play an important role when using the LED light system of photosynthetic products will be able to effectively reduce consumption. In this study, low efficiency of farm greenhouses, growing annual reduction in income due to rising operating costs and increase crop growth by inducing the proper planting environment Factory-type raise farmers' income and at the same time will contribute to the increase of Light device using LED Supplemental through photosynthesis, promote and improve product quality, plant growth regulators are considered possible for them to develop more efficient LED devices and LED Optical processing devices of Light leaf lettuce grown using normal fluorescent or incandescent bulbs grown in the results than the growth can see that the speed improvements. Usually shipped from seedling to harvest leaf lettuce from 25 to 30, whereas optical processing device be required red light (wavelength: 645nm) using a leaf of lettuce grown enough to be harvested after seven days increased the rate of growth. In addition, red light (wavelength: 645nm) and blue light (wavelength: 470nm) emitting at the same time, room, and grown for 5 days to harvest the growth rate was fast enough.

• Journal of the Korean Society of Physical Medicine
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• v.9 no.2
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• pp.151-159
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• 2014

PURPOSE: The purpose of this study was to evaluate whether light-emitting diodes (LED) irradiation could be effective in a noninvasive, therapeutic device for the treatment of osteoarthritis(OA). METHODS: Twenty-four male Sprague-Dawley rats were divided into four groups: Vehicle control (saline); monosodium iodoacetate-injection (MIA); LED irradiation after MIA injection (MIA-LED); indomethacin-treatment after MIA injection (MIA-IMT). OA was induced by intra-articular injection of 3 mg MIA through the patellar ligament of the right knee. Vehicle control rats were injected with an equivalent volume of saline. The LED was irradiated for 15 min/day for a week after 7 days of MIA treatment. To compare with the effect of LED irradiation, the indomethacin was administrated 20 mg/kg twice a week orally after 7 days of MIA treatment. Knee joints were removed and fixed overnight in 10% neutral buffered formalin and decalcified by EDTA for 2 week before being embedded in paraffin. The assessment of OA induction were monitored by knee movement and radiographic finding. Histologic analysis were performed following staining with hematoxylin and eosin, safranin O-fast green, or toluidine blue, picrosirius red, and histologic changes were scored according to a modified Mankin system. Apoptotic cell in tissue sections was detected using TUNEL method. RESULTS: Radiographic examination could not show the differences between the MIA-treated and the MIA-LED-treated rats. In the histologic analysis, however, LED irradiation prevented cartilage damage and subchondral bone destruction, and significantly reduced mononuclear inflammatory cell infiltration and pannus formation. LED irradiation also reduced apoptosis of cartilage cells, but it prevented apoptosis of infiltrated inflammatory cells in synovium. In addition, LED irradiation showed an increase of collagen production in the meniscus. CONCLUSION: These results suggest that the 840 nm LED irradiation would be a suitable non-thermal phototherapy for the treatment of OA, as a cartilage protection and anti-inflammatory modality.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.676-678
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• 2004

In order to develop new yellow phosphor that emit efficiently under the 450 - 470 nm excitation range, we have synthesized a $Eu^{2+}$-activated $Sr_3SiO_5$ yellow phosphor and investigated an attempt to develop white LEDs by combining it with a InGaN blue LED chip (460 nm). Two distinct emission bands from the InGaN-based LED and the $Sr_3SiO_5$:Eu phosphor are clearly observed at 460 nm and at 570 nm, respectively. These two emission bands combine to give a spectrum that appears white to the naked eye. Our results showed that InGaN (460 nm chip)-based $Sr_3SiO_5$:Eu exhibits a better luminous efficiency than that of the industrially available product InGaN (460 nm chip)-based YAG:Ce.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.23-23
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• 2003

GaN-related semiconductors are of great technological importance for the fabrication of optoelectronic devices, such as blue and ultra violet light emitting diodes (LEDs), laser diodes, and photo-detectors. One of the most important applications of GaN-based LEDs is solid-state lighting, which could replace incandescent bulbs and ultimately fluorescent lamps. For solid-state lighting applications, the achievement of high extraction efficiency in LED structures is essential. For flip-chip LEDs (FCLEDS), the formation of low resistance and high reflective p-GaN contact is crucial. So far, a wide variety of different methods have been employed to improve the ohmic properties of p-type contacts to GaN. For example, surface treatments using different chemical solutions have been successfully used to produce high-quality ohmic contacts, Metallization schemes, such as Ta/Ti contacts to p-GaN, were also investigated. For these contacts, the removal of hydrogen atoms from the Mg atoms doped n the GaN was argued to be responsible for low contact resistances.

• Journal of the Optical Society of Korea
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• v.15 no.3
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• pp.272-277
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• 2011

The effect of the M-window color mixing bar on the characteristics of color mixing and hot spots in the edge-lit backlight employing red (R), green (G), blue (G) light emitting diodes (LED) were studied in terms of the structure of the M-window color mixing bar. The rays from RGB LEDs entering the M-window bar were mixed by internal reflection and scattering inside the M-window bar so that the hot spots and color separation were minimized. The M-window bar was designed and fabricated and the simulation results are matched quite well to experimental data.

• 전자공학회논문지 IE
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• v.48 no.4
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• pp.25-29
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• 2011

Organic electroluminesencent device have been studied because of its easy fabrication and high brightness for plate panel display instead of CRT and LED. There are some device structure for full color filter system can be applicable to the full color application if the blue light organic electroluminesencent device(OELD) is developed. In this study, We have investigated electro-luminescent (EL) characteristics of organic EL device using Alq3, PBD as emitting material. Current and luminance can be seen that express a similar relativity in voltage and could know that luminance is expressing current relativity.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.1327-1330
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• 2008

A novel fiber optic solution is provided to efficiently mix visible colors. Full color synthesis was achieved utilizing a novel $3{\times}1$ hard polymer clad fiber (HPCF) coupler along with red, green and blue (RGB) light emitting diode (LED) primaries. Varying the intensities of RGB LEDs that are coupled to three input ports, the device rendered a full color with an ultra wide CIE color gamut. Potential applications in pica-projection displays and LED backlights will be discussed.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1090-1092
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• 2006

There is provided white light illumination system including a radiation source, a first luminescent material having a peak emission wavelength of about 575 to about 620 nm, a second luminescent material having a peak emission wavelength of about 495 to about 550 nm, which is different from the first luminescent material and a third luminescent material having a peak emission wavelength of about 420 to about 480 nm, which is different from the first and second luminescent materials. The LED may be a UV LED and the luminescent materials may be a blend of three phosphors. A human observer perceives the combination of the blue, green and red phosphor emissions as white light.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.531-531
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• 2012

So many groups have been researching the green quantum dots such as InP, InP/ZnS for overcoming the semiconductor nanoparticles composed with heavy metals like as Cd and Pb so on. In spite of much effort to keep up CdSe quantum dots, it does not reach the good properties compared with CdSe/ZnS quantum dots. This quantum dot has improved its properties through the generation of core/shell CdSe/ZnS structure or core/multi-shell structures like as CdSe/CdS/ZnS and CdSe/CdS/ CdZnS/ZnS. In this research, we try to synthesize the InP multi-shell structure by the successiveion layer absorption reaction (SILAR) in the one pot. The synthesized multi-shell structure has improved quantum yield and photo-stability. To generate white light, highly luminescent InP multi-shell quantum dots were mixed with yellow phosphor and integrated on the blue LED chip. This InP multi-shell improved red region of the LEDs and generated high CRI.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.79-82
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• 2009

This work presents a novel lighting technology based on a YAG:$Ce^{3+}$ phosphor converter with micro line lenticular structure, to accompany an array of bare LED chips on a board. This technology is especially effective in TFT-LCD backlight applications as it offers the advantages of high light radiation efficiency, low color deviation, uniform luminance distribution and compact backlight thickness. Additionally, the proposed configuration is low-cost, can be manufactured quickly, and can be mass-produced economically.