• Journal of the Korean Ceramic Society
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• v.52 no.5
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• pp.384-388
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• 2015

We prepared blocking layers by adding 0.0 ~ 0.6 wt% nano diamond blends (DBs) to $TiO_2$ blocking layers to improve the energy conversion efficiencies (ECEs) of dye sensitized solar cells (DSSCs). TEM and micro-Raman spectroscopy were used to characterize the microstructure and phases of DBs, respectively. Optical microscopy and FE-SEM were used to analyze the microstructure of the $TiO_2$ blocking layer with DBs. UV-VIS-NIR spectroscopy was used to determine the absorbance of the working electrodes. A solar simulator and a potentiostat were used to determine the photovoltaic properties and the impedance of the DSSCs with DBs. From the results of the DBs analysis, we determined a 6.97 nm combination of nano diamonds and graphite. We confirmed that ECE increased from 5.64 to 6.48 % when the added DBs increased from 0.0 to 0.2 wt%. This indicates that the effective surface area and electron mobility increased when DBs were added to the $TiO_2$ blocking layer. Our results indicate that the ECE of DSSCs can be enhanced by adding an appropriate amount of DBs to the $TiO_2$ blocking layers.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.60 no.2
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• pp.344-348
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• 2011

A layer of $TiO_2$ thin film less than ~200nm in thickness, as a blocking layer, was deposited by 13.56 MHz radio frequency magnetron sputtering method directly onto the anode electrode to be isolated from the electrolyte in dye-sensitized solar cells (DSCs). This is to prevent the electrons from back-transferring from the electrode to the electrolyte ($I^-/{I_3}^-$). The presented DSCs were fabricated with working electrode of F:$SnO_2$(FTO) glass coated with blocking $TiO_2$ layer, dye-attached nanoporous $TiO_2$ layer, gel electrolyte and counter electrode of Pt-deposited FTO glass. The effects of blocking layer were studied with respect to impedance and conversion efficiency of the cells. The, electrochemical impedances of DSCs using this electrode were $R_1$: 13.9, $R_2$: 15.0, $R_3$: 10.9 and $R_h$: $82{\Omega}$. The $R_2$ impedance related by electron movement from nanoporous $TiO_2$ to TCO showed lower than that of normal DSCs. The photo-conversion efficiency of prepared DSCs was 5.97% ($V_{oc}$: 0.75V, $J_{sc}$: 10.5 mA/$cm^2$, ff: 0.75) and approximately 1% higher than general DSCs sample.

• Journal of Korean Vacuum Science & Technology
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• v.6 no.1
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• pp.51-54
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• 2002

Polymer EL devices of glass/ITO/PI/MEH-PPV/Al structure were fabricated using spin coating and the Ionized Cluster Beam deposition technique. PMDA-ODA type thin polyimide films which can be used as a impurity blocking layer of EL device were deposited by ICB. According to our previous results, the packing densities of polyimide films were subject to change and depend on their deposition condition. By inserting a Pl layer with various thickness and packing density, I-V characteristics and life time of the devices were investigated to determine the role of a interlayer. The blocking of impurity diffusion from ITO to luminescent layer were confirmed by XPS.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2012.05a
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• pp.686-689
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• 2012

In this paper, the GaN-based LED characteristics are analyzed using ISE-TCAD. The LED consists of GaN barriers, active region of InGaN quantum well, AlGaN EBL(Electron Blocking Layer) and AlGaN HBL(Hole Blocking Layer) on GaN buffer layer. The output power characteristics of LED considering Auger recombination rate, thickness of quantum well and number of quantum wells are analyzed and some criteria for the design of LED are proposed.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2012.10a
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• pp.251-254
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• 2012

In this paper, the output characteristics of GaN-based LED considering quantum well structure are analyzed. The basic structure of the LED consists of active region of GaN barrier and InGaN quantum well between AlGaN EBL(Electron Blocking Layer) and AlGaN HBL(Hole Blocking Layer) on GaN buffer layer. The output power, internal quantum efficiency characteristics of LED active region considering thickness of quantum well, number of quantum well and doping of barrier are analyzed using ISE-TCAD.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.27 no.3
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• pp.50-54
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• 2013

In this work, the effects of blocking layer and optimally fabricated electrolyte were investigated with respect to impedance and conversion efficiency of the cells.A layer of $TiO_2$ less than ~200nm in thickness, as a blocking layer, was deposited by rf sputtering onto the F:$SnO_2$ (FTO) glass to be isolated from the electrolyte in dye-sensitized solar cells (DSCs). Also, optimum condition of electrolytes preparation for DSCs was investigated. 3-methoxyppropionitrie and redox pairs with LiI and $I_2$ were used as solvents for fabrication of electrolyte. The electrochemical impedances of DSCs using this photo-anode were $R_1$: 13.8, $R_2$: 15.1, $R_3$: 11.9 and $R_h$: $8.3{\Omega}$, respectively. The $R_2$ impedance related by electron transportation from porous $TiO_2$ to FTO showed lower than that of normal DSCs. The photo-conversion efficiency of prepared DSCs was 6.4% and approximately 1.3% higher than general one.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.1019-1022
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• 2007

High efficiency in Phosphorescent Organic lightemitting diodes using carbazole type exciton blocking layer were investigated and detailed mechanism for light emission process was studied. Efficiency of green PHOLEDs was enhanced by a factor 3.7.

• Transactions on Electrical and Electronic Materials
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• v.8 no.5
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• pp.218-221
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• 2007

High-efficiency white organic light-emitting diodes(WOLEDs) were fabricated with two emissive layers and an blocking layer was sandwiched between two phosphorescent dopants, bis(3,5-difluoro-2-(2-pyridyl)phenyl-(2-carboxypyridyl) iridium III(FIrpic) as the blue emission and a newly synthesized red phosphorescent material guest, bis(5-acetyl-2-phenylpyridinato-N,C2') acetylacetonate($(acppy)_2Ir(acac)$). This blocking layer prevented a T-T annihilation in a red emissive layer, and balanced with blue and red emission as blocking of hole carriers. The white device showed Commission Internationale d'Eclairage($CIE_{x,y}$) coordinates of (0.317, 0.425) at 22400 $cd/m^2$, a maximum luminance of 27300 $cd/m^2$ at 268 $mA/cm^2$, a maximum luminous efficiency and power efficiency of 26.9 cd/A and 18.6 lm/W.

• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.96.1-96.1
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• 2010

현재 태양광 시장에 진출한 대부분의 Si계열 태양전지는 복잡한 공정과 원재료 고갈, 높은 가격으로 인해 한계에 직면에 있는 상태이다. 최근 많은 연구소나 학교에서는 기존의 Si계열 태양전지를 대체할 대안으로 염료 감응형 태양전지에 대해서 높은 관심을 보이고 있으며, 그동안의 연구개발로 단위 셀 면적에서는 상용화에 근접한 효율을 확보한 상태이다. 염료 감응형 태양전지의 작동과정을 간단히 단계별로 살펴보면 나노 결정 산화물 반도체 표면에 흡착된 염료분자가 가시광선을 흡수하면 전자는 HOMO에서 LUMO로 천이하고 이 들뜬 상태의 전자는 다시 에너지 준위가 낮은 반도체 산화물의 전도띠로 주입된다. 주입된 전자는 나노 입자간 계면을 통하여 투명 전도성막으로 확산, 전달되고 산화된 염료분자는 전해질 I-에 의해 다시 환원되어 중성 분자가 된다. 그러나 표면상태 전자 중 일부는 산화된 염료와 다시 결합하거나, 전해질의 $I^{3-}$ 이온을 환원시키기도 한다. 이와 같은 과정은 암전류를 증가시키면서 반도체 전극 막의 성능을 저해하는 주원인이 된다. 전자의 재결합은 투명 전극을 통해서도 가능하기 때문에 투명 전극에 얇은 blocking layer를 도포한 후 나노 결정 산화물 반도체 전극을 제작하면 전지 특성을 향상시킬 수 있다. 본 실험에서 우리는 졸-젤 법으로 $TiO_2$ blocking layer 졸을 만들었고 간단하며 저가공정이 가능한 스크린 프린팅 방법으로 blocking layer를 형성하는 실험을 진행하였다. 전도띠 에너지가 높은 반도체 물질로 표면을 처리하면 $TiO_2$-전해질 간 계면에 에너지 장벽이 형성되어 재결합을 줄여 모든 광전특성이 향상 되었다.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.1
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• pp.1-7
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• 2000

The SNOSFET memory devices with ultrathin ONO(tunnel oxide-nitride-blocking oxide) gate dielectric were fabricated using n-well CMOS process and investigated its characteristics. The thicknesses of tunnel oxide, nitride and blocking oxide were $23{\AA},\; 53{\AA}\; and\; 33{\AA}$, respectively. Auger analysis shows that the ONO layer is made up of $SiO_2(upper layer of blocking oxide)/O-rich\; SiO_x\N\_y$. It clearly shows that the converting layer with $SiO_x\N\_y(lower layer of blocking oxide)/N-rich SiO_x\N\_y(nitride)/O-rich SiO_x\N\_y(tunnel oxide)$. It clearly shows that the converting layer with $SiO_x\N\_y$ phase exists near the interface between the blocking oxide and nitride. The programming condition of +8 V, 20 ms, -8 V, 50 ms is determined and data retention over 10 years is obtained. Under the condition of 8 V programming, it was confirmed that the modified Fowler-Nordheim tunneling id dominant charge transport mechanism. The programmed threshold voltage is distributed less than 0.1 V so that the reading error of memory stated can be minimized. An $8\times8$ NAND type flash EEPROM with SONOSFET memory cell was designed and simulated with the extracted SPICE parameters. The sufficient read cell current was obtained and the upper limit of $V_{TH}$ for write state was over 2V.