• Proceedings of the KIEE Conference
• /
• 2006.07c
• /
• pp.1351-1352
• /
• 2006

In this paper, the impedance properties of degraded thyristor with heat and voltage were presented. As degraded thyristor, 8 thyristors with each other different reverse blocking voltage used. Its impedance and resistance properties were measured from frequency 100Hz to 10MHz applied with bias voltage from 0V to 40V. As a result, at low frequency region, that is, at the frequency 100-10kHz, the abrupt increasement of its capacitance was confirmed. And also, at high frequency region, the capacitance peak move toward low frequency in the region of frequency 4 - 6MHz as degradation of thyristor.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2005.07a
• /
• pp.131-132
• /
• 2005

In this paper, the capacitance properties of degraded thyristor with temperature and voltage were presented. As degraded thyristor, 8 thyristors with each other different reverse blocking voltage used. Its impedance and resistance properties were measured from frequency 100Hz to 10MHz applied with bias voltage from 0V to 40V. As a result, at low frequency region, that is, at the frequency 100 - 10kHz, the abrupt increasement of its capacitance was confirmed. And also, at high frequency region, the capacitance peak move toward low frequency in the region of frequency 4 - 6MHz as degradation of thyristor.

• Transactions on Electrical and Electronic Materials
• /
• v.17 no.6
• /
• pp.359-362
• /
• 2016

In the PV (Photovoltaic) power system, a junction box collects the DC voltage generated from the PV module and transfers it to the PCS (power conditioning system). The junction box prevents damage caused by the voltage difference between the serially connected PV modules and provides convenience while repairing or inspecting the PV array. In addition, the junction box uses the diode to protect modules from the inverse current when the PV power system and electric power system are connected for use. However, by using the reverse blocking diode, heat is generated within the junction box while generating electric power, which decreases the generating efficiency, and causes short circuit and electric leakage. In this research, based on the purpose of improving the performance of the PV module by decreasing the heat generation within the junction box, a junction box with a built-in bypass circuit was designed/manufactured so that a certain capacity of current generated from the PV module does not run through the reverse blocking diode. The manufactured junction box was used to compare the electric power and heating power generated when the circuit was in the bypass/non-bypass modes. It was confirmed that the electric power loss and heat generation indicated a decrease when the circuit was in the bypass mode.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.07a
• /
• pp.267-270
• /
• 2001

A new small scaling Lateral Trench Insulated Gate Bipolar Transistor (SSLTIGBT) was proposed to improve the characteristics of the device. The entire electrode of the LTIGBT was replaced with a trench-type electrode. The LTIGBT was designed so that the width of device was no more than 10$\mu\textrm{m}$. The latch-up current densities were improved by 4.5 and 7.6 times, respectively, compared to those of the same sifted conventional LTIGBT and the conventional LTIGBT which has the width of 17$\mu\textrm{m}$. The enhanced latch-up capability of the SSLTIGBT was obtained due to the fact that the hole current in the device reaches the cathode via the p+ cathode layer underneath the n+ cathode layer, directly. The forward blocking voltage of the SSLTIGBT was 125 V. At the same size, those of the conventional LTIGBT and the conventional LTIGBT with the width of 17$\mu\textrm{m}$ were 65 V and 105 V, respectively. Because the proposed device was constructed of trench-type electrodes, the electric field in the device were crowded to trench oxide. Thus, the punch through breakdown of LTEIGBT occurred late.

• The Korean Journal of Physiology and Pharmacology
• /
• v.5 no.6
• /
• pp.511-519
• /
• 2001

Nimopidine, one of dihydropyridine derivatives, has been widely used to pharmacologically identify L-type Ca currents. In this study, it was tested if nimodipine is a selective blocker for L-type Ca currents in sensory neurons and heterologous system. In mouse dorsal root ganglion neurons (DRG), low concentrations of nimodipine $(<10\;{\mu}M),$ mainly targeting L-type Ca currents, blocked high-voltage-activated calcium channel currents by ${\sim}38%.$ Interestingly, high concentrations of nimodipine $(>10\;{\mu}M)$ further reduced the 'residual' currents in DRG neurons from ${\alpha}_{1E}$ knock-out mice, after blocking L-, N- and P/Q-type Ca currents with $10\;{\mu}M$ nimodipine, $1\;{\mu}M\;{\omega}-conotoxin$ GVIA and 200 nM ${\omega-agatoxin$ IVA, indicating inhibitory effects of nimodipine on R-type Ca currents. Nimodipine $(>10\;{\mu}M)$ also produced the inhibition of both low-voltage-activated calcium channel currents in DRG neurons and ${\alpha}_{1B}\;and\;{\alpha}_{1E}$ subunit based Ca channel currents in heterologous system. These results suggest that higher nimodipine $(>10\;{\mu}M)$ is not necessarily selective for L-type Ca currents. While care should be taken in using nimodipine for pharmacologically defining L-type Ca currents from native macroscopic Ca currents, nimodipine $(>10\;{\mu}M)$ could be a useful pharmacological tool for characterizing R-type Ca currents when combined with toxins blocking other types of Ca channels.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.06a
• /
• pp.199-199
• /
• 2008

이 실험은 NVM의 Oxide, Nitride, Oxide nitride층별 blocking, trapping and tunneling 속성에 대해서 밝히고자 한다. gate 전극은 값싸고 전도도가 좋은 알루미늄을 사용한다. 유리기판위에 Silicon nitride층을 20nm로 코팅하고 Silicon dioxide층을 10nm로 코팅한다. 그리고 amorphous Silicon material이 증착된다. Poly Silicon은 Solid Phase Crystallization 방법을 사용하였다. 마지막 공정으로 p-doping은 ion shower에 의한 방법으로 drain과 source 전극을 생성하였다. gate가 biasing 될 때, p-channel은 source와 drain 사이에서 형성된다. Oxide Nitride Oxide nitride (ONO) 층은 각각 12.5nm/20nm/2.3nm의 두께로 만들었다. 전하는 Program process 중에 poly Silicon층에서 Silicon Oxide nitride tunneling층을 통하여 움직이게 된다. 그리고 전하들은 Silicon Nitride층에 머무르게 된다. 그 전하들은 erasing process 중에 trapping 층에서 poly Silicon 층으로 되돌아 간다. Silicon Oxide blocking층은 trapping층으로 전하가 나가는 것을 피하기 위하여 더해진다. 이 논문에서 Programming process와 erasing process의 Id-Vg 특성곡선을 설명한다. Programming process에 positive voltage를 또는 erasing process에 negative voltage를 적용할 때, Id-Vg 특성 곡선은 왼쪽 또는 오른쪽으로 이동한다. 이 실험이 보여준 결과값에 의해서 10년 이상의 저장능력이 있는 메모리를 만들 수 있다. 그러므로, NVM의 중요한 두 가지 성질은 유지성과 내구성이다.

• Journal of Electrical Engineering and Technology
• /
• v.13 no.2
• /
• pp.752-760
• /
• 2018

In this paper, interior permanent magnet synchronous motor (IPMSM) design for sensorless drive, considering magnetic neutral point shift according to magnetic saturation, has been proposed. Sensorless control was divided into a method based on inductance and a method based on back induced voltage. Because induced voltage is very small at zero or low speed, error in rotor initial position estimation may occur. Using the ratio of saliency addresses this problem. When using high-frequency injections at low speed, the rotor's initial position is estimated at the smallest portion of the inductance. IPMSM has the minimum inductance at the d-axis. However, if magnetic saturation leads to magnetic neutral point variation, following the load current change, there is a change in the minimum point of inductance. In this case, it can lead to failure of initial rotor position estimation. As a result, it is essential that the blocking design has an inductance minimum point shift. As such, in this study, an IPMSM design method, by blocking magnetic neutral point change, has been proposed. After determining the inductance profile based on the finite element analysis (FEA), the results of proposed method were verified.

• Journal of Power Electronics
• /
• v.16 no.3
• /
• pp.823-831
• /
• 2016

A high-efficiency method is proposed to suppress magnetic core imbalance in phase-shifted full-bridge (PSFB) converters. Compared with conventional solutions, such as controlling peak current mode (PCM) or adding DC blocking capacitance, the proposed method has several advantages, such as lower power loss and smaller size, because the additional current sensor or blocking capacitor is removed. A time domain model of the secondary side is built to analyze the relationship between transformer core imbalance and cathode voltage of secondary side rectifiers. An approximate control algorithm is designed to achieve asymmetric phase control, which reduces the effects of imbalance. A 60 V/15 A prototype is built to verify the proposed method. Experimental results show that the numerical difference of primary side peak currents between two adjacent cycles is suppressed from 2 A to approximately 0 A. Meanwhile, compared with the PCM solution, the efficiency of the PSFB converter is slightly improved from 93% to 93.2%.

• Transactions on Electrical and Electronic Materials
• /
• v.2 no.4
• /
• pp.15-18
• /
• 2001

A new small scaling Lateral Trench Insulated Gate Bipolar Transistor (SSLTIGBT) was proposed to improve the characteristics of the device. The entire electrode of the LTIGBT was replaced with a trench-type electrode. The LTIGBT was designed so that the width of device was no more than 10 ${\mu}{\textrm}{m}$. The latch-up current densities were improved by 4.5 and 7.6 times, respectively, compared to those of the same sized conventional LTIGBT arid the conventional LTIGBT which has the width of 17 ${\mu}{\textrm}{m}$. The enhanced latch-up capability of the SSLTIGBT was obtained due to the fact that the hole current in the device reaches the cathode via the p+ cathode layer underneath the n+ cathode layer, directly. The forward blocking voltage of the SSLTIGBT was 125 V. At the same size, those of the conventional LTIGBT and the conventional LTIGBT with the width of 17 ${\mu}{\textrm}{m}$ were 65 V and 105 V, respectively. Because the proposed device was constructed of trench-type electrodes, the electric field In the device were crowded to trench oxide. Thus, the punch through breakdown of LTEIGBT occurred late.

• The Korean Journal of Physiology and Pharmacology
• /
• v.23 no.5
• /
• pp.419-426
• /
• 2019

Mosapride accelerates gastric emptying by acting on 5-hydroxytryptamine type 4 ($5-HT_4$) receptor and is frequently used in the treatment of gastrointestinal (GI) disorders requiring gastroprokinetic efficacy. We tested the effect of mosapride on 5-hydroxytryptamine type 3 ($5-HT_3$) receptor currents because the $5-HT_3$ receptors are also known to be expressed in the GI system and have an important role in the regulation of GI functions. Using the whole-cell voltage clamp method, we compared the currents of the $5-HT_3$ receptors when 5-HT was applied alone or was co-applied with mosapride in cultured NCB-20 cells known to express $5-HT_3$ receptors. The $5-HT_3$ receptor current amplitudes were inhibited by mosapride in a concentration-dependent manner. Mosapride blocked the peak currents evoked by the application of 5-HT in a competitive manner because the $EC_{50}$ shifted to the right without changing the maximal effect. The rise slopes of $5-HT_3$ receptor currents were decreased by mosapride. Pre-application of mosapride before co-application, augmented the inhibitory effect of mosapride, which suggests a closed channel blocking mechanism. Mosapride also blocked the opened $5-HT_3$ receptor because it inhibited the $5-HT_3$ receptor current in the middle of the application of 5-HT. It accelerated desensitization of the $5-HT_3$ receptor but did not change the recovery process from the receptor desensitization. There were no voltage-, or use-dependency in its blocking effects. These results suggest that mosapride inhibited the $5-HT_3$ receptor through a competitive blocking mechanism probably by binding to the receptor in closed state, which could be involved in the pharmacological effects of mosapride to treat GI disorders.