• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.311-312
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• 2010

The fabricated photovoltaic cells based on PIN heterojunctions, in this study, have a structure of ITO/poly(3, 4-ethylenedioxythiophene)-poly(styrenesulfonate)(PEDOT:PSS)/donor/donor:C60(10nm)/C60(35nm)/2, 9-dimethyl-4, 7-diphenyl-1, 10-phenanthroline(8nm)/Al(100nm). The thicknesses of an active layer(donor:C60), an electron transport layer(C60), and hole/exciton blocking layer(BCP) were fixed in the organic photovoltaic cells. We investigated the performance characteristics of the PIN organic photovoltaic cells with copper phthalocyanine(CuPc), tetracene and pentacene as a hole transport layer. Discussion on the photovoltaic cells with CuPc, tetracene and pentacene as a hole transport layer is focussed on the dependency of the power conversion efficiency on the deposition rate and thickness of hole transport layer. The device performance characteristics are elucidated from open-circuit-voltage(Voc), short-circuit-current(Jsc), fill factor(FF), and power conversion efficiency($\eta$). As the deposition rate of donor is reduced, the power conversion efficiency is enhanced by increased short-circuit-current(Jsc). The CuPc-based PIN photovoltaic cell has the limited dependency of power conversion efficiency on the thickness of hole transport layer because of relatively short exciton diffusion length. The photovoltaic cell using tetracene as a hole transport layer, which has relatively long diffusion length, has low efficiency. The maximum power conversion efficiencies of CuPc, tetracene, and pentacene-based photovoltaic cells with optimized deposition rate and thickness of hole transport layer have been achieved to 1.63%, 1.33% and 2.15%, respectively. The photovoltaic cell using pentacene as a hole transport layer showed the highest efficiency because of dramatically enhanced Jsc due to long diffusion length and strong thickness dependence.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.118-118
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• 2011

The Nano-Floating Gate Memory(NFGM) devices with ZnO:Cu thin film embedded in Al2O3 and AlOx-SAOL were fabricated and the electrical characteristics were evaluated. To further improve the scaling and to increase the program/erase speed, the high-k dielectric with a large barrier height such as Al2O3 can also act alternatively as a blocking layer for high-speed flash memory device application. The Al2O3 layer and AlOx-SAOL were deposited by MLD system and ZnO:Cu films were deposited by ALD system. The tunneling layer which is consisted of AlOx-SAOL were sequentially deposited at $100^{\circ}C$. The floating gate is consisted of ZnO films, which are doped with copper. The floating gate of ZnO:Cu films was used for charge trap. The same as tunneling layer, floating gate were sequentially deposited at $100^{\circ}C$. By using ALD process, we could control the proportion of Cu doping in charge trap layer and observe the memory characteristic of Cu doping ratio. Also, we could control and observe the memory property which is followed by tunneling layer thickness. The thickness of ZnO:Cu films was measured by Transmission Electron Microscopy. XPS analysis was performed to determine the composition of the ZnO:Cu film deposited by ALD process. A significant threshold voltage shift of fabricated floating gate memory devices was obtained due to the charging effects of ZnO:Cu films and the memory windows was about 13V. The feasibility of ZnO:Cu films deposited between Al2O3 and AlOx-SAOL for NFGM device application was also showed. We applied our ZnO:Cu memory to thin film transistor and evaluate the electrical property. The structure of our memory thin film transistor is consisted of all organic-inorganic hybrid structure. Then, we expect that our film could be applied to high-performance flexible device.----못찾겠음......

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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• pp.35-38
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• 2002

In this paper, the characteristics of channel hot electron (CHE) injection for the write operation in a NOR-type SONOS flash memory with common source line were investigated. The thicknesses of he tunnel oxide, the memory nitride， and the blocking oxide layers for the gate insulator of the fabricated SONOS devices were $34{\AA}$, $73{\AA}$, and $34{\AA}$, respectively. The SONOS devices compared to floating gate devices have many advantages, which are a simpler cell structure, compatibility with conventional logic CMOS process and a superior scalability. For these reasons, the introduction of SONOS device has stimulated. In the conventional SONOS devices, Modified Folwer-Nordheim (MFN) tunneling and CHE injection for writing require high voltages, which are typically in the range of 9 V to 15 V. However CHE injection in our devices was achieved with the single power supply of 5 V. To demonstrate CHE injection, substrate current (Isub) and one-shot programming curve were investigated. The memory window of about 3.2 V and the write speed of $100{\mu}s$ were obtained. Also, the disturbance and drain turn-on leakage during CHE injection were not affected in the SONOS array. These results show that CHE injection can be achieved with a low voltage and single power supply, and applied for the high speed program of the SONOS memory devices.

• Transactions on Electrical and Electronic Materials
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• 제11권4호
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• pp.155-165
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• 2010

As a promising candidate to replace the conventional floating gate flash memories, polysilicon-oxide-nitride-oxidesilicon (SONOS)-type nonvolatile semiconductor memories have been investigated widely in the past several years. SONOS-type memories have some advantages over the conventional floating gate flash memories, such as lower operating voltage, excellent endurance and compatibility with standard complementary metal-oxide-semiconductor (CMOS) technology. However, their operating speed and date retention characteristics are still the bottlenecks to limit the applications of SONOS-type memories. Recently, various approaches have been used to make a trade-off between the operating speed and the date retention characteristics. Application of high-k dielectrics to SONOS-type memories is a predominant route. This article provides the state-of-the-art research progress of high-k dielectrics applicable to SONOS-type nonvolatile semiconductor memories. It begins with a short description of working mechanism of SONOS-type memories, and then deals with the materials' requirements of high-k dielectrics used for SONOS-type memories. In the following section, the microstructures of high-k dielectrics used as tunneling layers, charge trapping layers and blocking layers in SONOS-type memories, and their impacts on the memory behaviors are critically reviewed. The improvement of the memory characteristics by using multilayered structures, including multilayered tunneling layer or multilayered charge trapping layer are also discussed. Finally, this review is concluded with our perspectives towards the future researches on the high-k dielectrics applicable to SONOS-type nonvolatile semiconductor memories.

• 한국재료학회지
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• 제19권5호
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• pp.240-244
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• 2009

Simple and high efficiency green phosphorescent devices using an intermixed double host of 4, 4', 4"-tris(N-carbazolyl) triphenylamine [TCTA], 1, 3, 5-tris (N-phenylbenzimiazole-2-yl) benzene [TPBI], phosphorescent dye of tris(2-phenylpyridine)iridium(III) [$Ir(ppy)_3$], and selective doping in the TPBI region were fabricated, and their electro luminescent characteristics were evaluated. In the device fabrication, layers of $70{\AA}$-TCTA/$90{\AA}$-$TCTA_[0.5}TPBI_{0.5}$/$90{\AA}$-TPBI doped with $Ir(ppy)_3$ of 8% and an undoped layer of $50{\AA}$-TPBI were successively deposited to form an emission region, and SFC137 [proprietary electron transporting material] with three different thicknesses of $300{\AA}$, $500{\AA}$, and $700{\AA}$ were used as an electron transport layer. The device with $500{\AA}$-SFC137 showed the luminance of $48,300\;cd/m^2$ at an applied voltage of 10 V, and a maximum current efficiency of 57 cd/A under a luminance of $230\;cd/m^2$. The peak wavelength in the electroluminescent spectral and color coordinates on the Commission Internationale de I'Eclairage [CIE] chart were 512 nm and (0.31, 0.62), respectively.

• Archives of Pharmacal Research
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• 제29권1호
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• pp.34-39
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• 2006

The antispasmodic and vasodilator activities of a newly synthesized piperidine derivative (1-(4'fluorophenacyl)-4-hydroxy-4-phenyl-piperidinium chloride) were studied in vitro. The test compound exhibited a dose-dependent relaxant effect on the spontaneous and $K^+$ (75 mM)-induced contractions of isolated rabbit jejunum with respective $EC_{50}$ values of 0.01 mM(0.01-0.02, 95% CI) and 0.30 mM (0.17-0.56). The $Ca^{++}$ channel blocking (CCB) activity was confirmed when the test compound (0.1-0.2 mM) shifted the $Ca^{++}$ dose-response curves to the right, similar to that produced by verapamil ($0.1-1.0{\mu}M$), a standard CCB. In the isolated rabbit aorta, the test compound showed a dose-dependent vasodilator effect on $K^+$ (75 mM)-induced contractions with an $EC_{50}$ value of 0.08 mM (0.02-0.26) while also suppressed the norepinephrine ($1{\mu}M$) control peak responses with $EC_{50}$ value of 0.08 mM (0.05-0.13, n=5). When tested in Langendorff perfused rabbit heart preparation, the test compound exhibited a negligible inhibitory effect on the rate or force of atrial and ventricular contractions when tested up to 5 mM. The results show smooth muscle-selective relaxant effect of the test compound on intestinal and vascular preparations mediated possibly via blockade of voltage and receptor-operated $Ca^{++}$ channels.

• Journal of Acupuncture Research
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• 제32권1호
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• pp.97-107
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• 2015

Objectives : The purpose of this study is to explore the antitumor mechanism and effects of tetrodotoxin through a literature review of experimental and clinical studies. Methods : Medical databases, including The Cochrane Library, Pubmed, NDSL, RISS4u and National Assembly Library, were searched for relevant articles published from January 1, 2000 to October 31, 2014 using the keywords 'tetrodotoxin', 'cancer' and 'tumor'. The results were classified into experimental studies(in vitro and in vivo) and clinical studies. Analysis of the results was conducted on several research areas including the mechanism, antitumor effect and adverse effects of tetrodotoxin(TTX). Results : A total of 34 experimental studies(32 in vitro and 2 in vivo) and 3 clinical studies were found in the search. Most of the experimental studies suggested blocking of voltage-gated sodium channels in metastasis of tumor cells as the main antitumor mechanism of TTX. The most common type of cancers mentioned in the experimental studies were prostate and breast cancer. All of the clinical studies were on the application of TTX on moderate to severe cancer-related pain. No adverse effects of TTX were reported in in vivo studies but mild to moderate adverse events were reported in clinical studies. Conclusions : The results show that tetrodotoxin, which is the main component of Tetraodontidae(commonly known as pufferfish) poison, could be clinically used for antitumor therapy. However, further studies should be conducted on its safety.

• Journal of Magnetics
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• 제21권2호
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• pp.266-272
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• 2016

Transcranial magnetic stimulation devices has been used mainly for diagnostic purposes by measuring the functions of the nervous system rather than for treatment purposes, and has a problem of considerable energy fluctuations per repeated pulse. The majority of strokes are caused by ischemia and result in brain tissue damage, leading to problems of the central nervous system including hemiparesis, dysfunction of language and consciousness, and dysfunction of perception. Control is difficult and the size is large due to the difficulty of digitalizing the energy stored in a capacitor, and there are many heavy devices. In addition, there are many constraints when it is used for a range of purposes such as head and neck diagnosis, treatment and rehabilitation of nerve palsy, muscle strengthening, treatment of urinary incontinence etc. Output stabilization and minimization of the energy variation rate are required as the level of the transcranial magnetic stimulation device is dramatically improved and the demand for therapeutic purposes increases. This study developed a compact, low cost transcranial magnetic stimulation device with minimal energy variation of a high repeated pulse and output stabilization using a real time capacitor charge discharge voltage. Ischemia was induced in male SD rats by closing off the common carotid artery for 5 minutes, after which the blood was re-perfused. In the cerebrum, the number of PARP reactive cells after 24 hours significantly decreased (p < 0.05) in the TMS group compared to the GI group. As a result, TMS showed the greatest effect on necrosis-related PARP immuno-reactive cells 24 hours after ischemia, indicating necrosis inhibition, blocking of neural cell death, and protection of neural cells.

• Current Photovoltaic Research
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• 제3권4호
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• pp.130-134
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• 2015

The high efficiency cell research processes through the KF post deposition treatment (PDT) of the $Cu(In,Ga)Se_2(CIGS)$ thin film has been very actively progress. In this study, it CIGS thin film deposition process when KF PDT 300 to the processing temperature, 350, $400^{\circ}C$ changed to soda-lime glass (SLG) efficiency of the CIGS thin film characteristics, and solar cell according to Na presence of diffusion from the substrate the effects were analyzed. As a result, the lower the temperature of KF PDT and serves to interrupt the flow of current K-CIGS layer is not removed from the reaction surface, FF and photocurrent is decreased significantly. Blocking of the Na diffusion from the glass substrate is significantly increased while the optical voltage, photocurrent and FF is a low temperature (300, $350^{\circ}C$) in the greatly reduced, and in $400^{\circ}C$ tend to reduce fine. It is the presence of Na in CIGS thin film by electron-induced degradation of the microstructure of CIGS thin film is expected to have a significant impact on increasing the hole recombination rate a reaction layer is formed of the K elements in the CIGS thin film surface.

• Archives of Pharmacal Research
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• 제29권4호
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• pp.310-317
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• 2006

We investigated the effects of trinitrobenzene sulfonic acid (TNBS), an amino-group reagent, on the human ether-a-go-go-related gene (HERG) $K^+$ channels expressed in Xenopus oocytes. TNBS neutralizes the positively charged amino-groups of peptide N-terminal and lysine residues. External application of TNBS at 10 mM for 5 min irreversibly shifted the curves for currents at the end of the pulse and tail currents of HERG to a more negative potential and decreased the maximal amplitude of the $I_{tail}$ curve $(I_{tail,max})$. TNBS had little effect on either the activated current-voltage relationship or the reversal potential of HERG current, indicating that TNBS did not change ion selectivity properties. TNBS shifted the time constant curves of both activation and deactivation of the HERG current to a more hyperpolarized potential; TNBS's effect was greater on channel opening than channel closing. External $H^+$ is known to inhibit HERG current by shifting $V_{1/2}$ to the right and decreasing $I_{tail,max}$. TNBS enhanced the blockade of external $H^+$ by exaggerating the effect of $H^+$ on $I_{tail,max}$, not on $V_{1/2}$. Our data provide evidence for the presence of essential amino-groups that are associated with the normal functioning of the HERG channel and evidence that these groups modify the blocking effect of external $H^+$ on the current.