• Parasites, Hosts and Diseases
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• v.44 no.1 s.137
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• pp.35-41
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• 2006

Protozoan parasites of the genus Leishmania cause a number of important human diseases. One of the key determinants of parasite infectivity and survival is the surface glycoconjugate lipophosphoglycan (LPG). In addition, LPG is shown to be useful as a transmission blocking vaccine. Since culture supernatant of parasite promastigotes is a good source of LPG, we made attempts to characterize functions of the culture supernatant, and membrane LPG isolated from metacyclic promastigotes of Leishmania major. The purification scheme included anion-exchange chromatography, hydrophobic interaction chromatography and cold methanol precipitation. The purity of supernatant LPG (sLPG) and membrane LPG (mLPG) was determined by SOS-PAGE and thin layer chromatography. The effect of mLPG and sLPG on nitric oxide (NO) production by murine macrophages cell line (J77 4.1 A) was studied. Both sLPG and mLPG induced NO production in a dose dependent manner but sLPG induced significantly higher amount of NO than mLPG. Our results show that sLPG is able to promote NO production by murine macrophages.

• Journal of the Korean institute of surface engineering
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• v.51 no.1
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• pp.34-39
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• 2018

Steel crucible used for molten Al has a problem of very limited lifetime because of the interaction between Fe and molten Al. This study was performed to improve the lifetime of steel crucible for molten Al by coating metallic Al and by further anodizing treatment to form thick and uniform anodic oxide films. The lifetime of the steel crucible was improved slightly by Al coating from 30 to 40 hours by metallic Al coating and largely to 120 hours by coating the surface with anodic oxide film. The improved lifetime was attributed to blocking of the reaction between Fe and molten Al with the help of anodic oxide layer with more than 20 um thickness on the crucible surface. The failure of the steel crucible arises from the formation of intermetallic compounds and pores at the steel/Al interface.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.32 no.12A
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• pp.1320-1328
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• 2007

In recent year, the popularity of WLAN has generated much interests on improvement and performance analysis of the IEEE 802.11 protocol. In this paper, we analyze two medium access methods of the IEEE 802.11 MAC protocol by investigating the MAC layer packet service times when arrival packet sizes have a general probability distribution. We use the M/G/1/K queueing model to analyze the throughput and the delay performance of IEEE 802.11 MAC protocol in a wireless LAN. We compare the performances of Basic access method and RTS/CTS access method. We take some numerical examples for the system throughput and the queue dynamics including the mean packet delay and packet blocking probability.

• Journal of IKEEE
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• v.24 no.1
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• pp.238-242
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• 2020

This paper presents a technique using a multilayered dielectric coating to reduce the radar cross section (RCS) value of an integrated mast mounted in a destroyer. The proposed multilayer structure has the advantage of being easy to fabricate because the dielectric constant is defined so that a general dielectric that does not contain a magnetic component that requires high dielectric constant or is frequently used for blocking electromagnetic wave absorption can be used. After applying the proposed multi-layer dielectric structure to the integrated mast shape, the simulation results show that the RCS reduction performance is 10.9dB at 6GHz, 11.95dB at 12GHz, and 11.63dB at 18GHz compared to the structure without the multilayer structure.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.10
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• pp.822-827
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• 2000

The Si-SiO$_2$interface trap and nitride bulk trap distribution of SONOSFET(polysilicon-oxide-nitride-oxide-semiconductor field effect transistor) NVSM (nonvolatile semiconductor memory) cell is investigated by single junction charge pumping method. The device was fabricated by 0.35㎛ standard logic fabrication process including the ONO stack dielectrics. The thickness of ONO dielectricis are 24$\AA$ for tunnel oxide, 74 $\AA$ for nitride and 25 $\AA$ for blocking oxide, respectively. By the use of single junction charge pumping method, the lateral profiles of both interface and memory traps can be calculated directly from experimental charge pumping results without complex numerical simulation. The interface traps were almost uniformly distributed over the whole channel region and its maximum value was 7.97$\times$10$\^$10/㎠. The memory traps were uniformly distributed in the nitride layer and its maximum value was 1.04$\times$10$\^$19/㎤. The degradation characteristics of SONOSFET with write/erase cycling also were investigated.

• ETRI Journal
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• v.13 no.4
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• pp.2-9
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• 1991

Buried-heterostructure lasers are more difficult to fabricate than weakly index guided or gain guided lasers. However, these strongly index guided structures are most suitable for a source of lightwave transmission systems. But, for conventional etched mesa buried heterostructure lasers, the regrowth of InP blocking layer is difficult and irreproducible. So, there are inevitable leakage currents flowing outside the active region resulting poor performance. To eliminate these problems, we used a planar buried heterostructure. As a results, the average threshold current was 28mA and the differential quantum efficiency was about 20% per facet for $1.3\mum$ GaInAsP/InP PBH-LD. The initial forward leakage current was not exceeding $1\muA$ and the reverse voltage for $-10\muA$ was -3V~-5V, these are improved figure of 1mA~10mA and -1V~-3V for EMBH laser diode. The chip modulation bandwidth was more than 2.4GHz for $1.5I_th$.

• Korean Chemical Engineering Research
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• v.54 no.2
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• pp.274-277
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• 2016

Effects of interlayer insertion between multi-quantum well and electron blocking layer of green light emitting diode on diode performances were studied by device simulation. Dependence of Mg doping depth on characteristics of current-voltage, emitting wavelength, leakage current, and external quantum efficiency was investigated, and the optimum diode structure was presented. Device structures with interlayers doped in entire region and up to 30 nm showed remarkable reduced leakage current and effectively relieved efficiency droop which is one of the biggest challenges in green light emitting diode. Furthermore, the most improved characteristics in current-voltage and electroluminescence was obtained by the latter structure.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.468-470
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• 1999

One of the most critical problem in etching of platinum was generally known that the etch slope was gradual. therefore, the addition of $N_2$ gas into the Ar/C1$_2$ gas mixture, which has been proposed the optimized etching gas combination for etching of platinum in our previous article, was performed. The selectivity of platinum film to oxide film as an etch mask increased with the addition of N2 gas, and the steeper etch slope over 75 $^{\circ}$ could be obtained. These phenomena were interpreted the results the results of a blocking layer such as Si-N or Si-O-N on the oxide mask. Compostional analysis was carried out by X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS). Moreover, it could be obtained the higher etch rate of Pt film and steeper profile without residues such as p.-Cl and Pt-Pt ant the addition N\ulcorner of 20 % gas in Ar(90)/Cl$_2$(10) Plasma. The Plasma characteristic was extracted from optical emissionspectroscopy (OES).

• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.1353-1354
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• 2007

폴리 실리콘 층의 유무에 따른 금속-옥사이드-반도체(MOS) 구조의 소자를 제작하였다. 터널링 산화막과 블로킹 산화막으로는 $Al_{2}O_{3}$ 층을 증착하였으며, 원자층 증착법을 이용하여 제작하였다. 터널링 산화막 층의 두께에 따른 I-V와 C-V 특성을 측정하였다. 전자들이 폴리 실리콘 층에 저장됨에 따라 N-형의 I-V 특성이 관찰되었다. C-V 측정 시에는 반시계 방향의 히스테리시스 특성을 나타내었으며, 전압이 증가할수록 플랫-밴드 전압 이동 폭이 더욱 증가하였다. 이러한 전기적 특성은 전압의 이동에 따른 전자들이 터널링 산화막 층을 통하여 폴리 실리콘 내부에 저장되기 때문이다. 이를 특성들은 폴리 실리콘의 전하 저장 가능성을 보여주는 것이며, 터널링 산화막 층의 두께에 따른 전기적 특성 변화도 관찰하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.181-184
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• 2004

Organic semiconductors have attracted considerable attention due to their interesting physical properties followed by various technological applications in the area of electronics and opto-electronics. It has been a long time since organic solar cells were expected as a low-cost high-energy conversion device. Although practical use of them has not been achieved, technological progress continues. Morphology of the materials, organic/inorganic interface, metal cathodes, molecular packing and structural properties of the donor and acceptor layers are essential for photovoltaic response. We have fabricated solar-cell devices based on copper-phthalocyanine(CuPc) as a donor(D) and fullerene($C_{60}$) as an electron acceptor(A) with doped charge transport layers, and BCP as an exciton blocking layer(EBL). We have measured photovoltaic characteristics of the solar-cell devices using the xenon lamp as a light source.