• Proceedings of the IEEK Conference
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• 1998.10a
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• pp.629-632
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• 1998

This paper presents a new and simple technique to realize high Q inductor on low resistivity silicon wafer with 6 $\Omega$.cm. This technique is very compatible with bipolar and CMOS standard silicon process. By forming the deep and narrow trenches on the low resistivity wafer substrate under inductor pattern, oxidizing and filling with undoped polysilicon, the low resistivity silicon wafer acts as high resistivity wafer being suitable for the fabrication of high Q inductor. By using this technique the quality factor (Q) for 8-turn spiral inductor was improved up to max. 10.3 at 2 ㎓ with 3.0 $\mu\textrm{m}$ of metal thickness. The experiment results show that Q on low resistivity silicon wafer with the trench technique have been improved more than 2 times compared to the conventional low resistivity silicon wafer without trenches.

• Proceedings of the KIEE Conference
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• 1991.07a
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• pp.255-258
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• 1991

MCFC are expected as an electric and thermal power source of the urban cogenerating system because MCFC have higher electric power efficiency and better thermal power quality. However, the MCFC which use strorgly corrosive molten Carbonate at $650^{\circ}C$ have many problems. Material issues with the molten carbonate fuel cell in clude anode creep, conthode dissolution and bipolar plate corrosion. The objectives of this study are to examied fabrication process and characteristics of anode electrode.

• Journal of Institute of Convergence Technology
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• v.2 no.2
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• pp.5-12
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• 2012

Recently, peoples are suffering from various psychological disorders such as addiction, phobia, depression, and bipolar disorder. Moreover, children with ADD/ADHD and autism are increasing. Korean tends to regard the psychological disorders as taboo. Therefore, it is unusual case that the mental patient gets the psychological therapy. Virtual reality has come to the spotlight as a useful tool for the therapy due to its anonymity and easy accessibility. The therapy in the virtual reality is called cyber-therapy. Emotion of the patient is important for the treating process. The objective of this paper is to review the researches on the treatment of psychological disorders using the virtual reality and prospect the affective interaction technology for the cyber-therapy.

• Proceedings of the IEEK Conference
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• 2002.06b
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• pp.73-76
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• 2002

In this paper we present an integrated Hail sensor It for fan motors, fabricated in industrial bipolar process. As a discrete Hall sensor and signal processing circuitry In the fan motor system were Integrated into single chip a temperature dependence of Hall sensitivity and Hall offset voltage can be compensated and cancelled by on-chip circuitry. We Propose a novel temperature compensation of Hall sensitivity with negative temperature coefficient (TC) using the differential amplifier gain with Positive TC. After a package of the chip was sealed using a plastic Package 20 Pins, the thermal and magnetic characteristics were investigated. The obtained experimental results are in agreement with analytical predictions and have more excellent performance than\ulcorner conventional the fan motor system using discrete Hall sensor.

• Journal of the Korean Institute of Telematics and Electronics
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• v.24 no.6
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• pp.969-974
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• 1987

High value sheet resistance (Rs, 350 \ulcorner/ -80 K \ulcorner/ ) borom implanted polysilicon resistors were fabricated under process condition compatible with bipolar integrated circuits fabrication. This paper includes the effect of contact ion implantation on Rs and the effect of electron gun(e-gun) deosition vs. non e-gun evaporated metal contacts on the Rs. From results, we observed that the contact ion implanted samples showed higher Rs value than those without contact ion implantation. Also, it was shown that there is noticeable amount of Rs degradation for e-gun samples, while sputtered samples expressed little Rs degradation after PtSi was formed.

• Proceedings of the IEEK Conference
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• 1999.11a
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• pp.212-215
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• 1999

High-speed device is essential to optoelectric IC for optical storage system such as CD-ROM, DVD, and to ADC for high-speed communication system. This paper represents the BiCMOS process which contains high-speed SAVEN bipolar transistor and analyzes the frequency and switching characteristics of it briefly. Finally, to prove that the SAVEN device is adequate for high-speed system, latched comparator operating at 500MHz is designed with the SPICE parameter extracted from BiCMOS device simulation.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.2
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• pp.105-108
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• 2020

In this study, experiments and simulations were conducted for a 1,200-V-class trench Si insulated-gate bipolar transistor (IGBT) with a small cell pitch below 2.5 ㎛. Presently, as a power device, the 1,200-V-class trench Si IGBT is used for automotives including electric vehicles, hybrid electric vehicles, and industrial motors. We obtained a breakdown voltage of 1,440 V, threshold of 6 V, and state voltage drop of 1.75 V. This device is superior to conventional IGBTs featuring a planar gate. To derive its electrical characteristics, we extracted design and process parameters. The cell pitch was 0.95 ㎛ and total wafer thickness was 140 ㎛ with a resistivity of 60 Ω·cm. We will apply these results to achieve fine-pitch gate power devices suitable for electrical automotive industries.

• Journal of Power Electronics
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• v.17 no.5
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• pp.1372-1381
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• 2017

This paper presents a high-side switch driver IC capable of improving the current sensing accuracy and providing reverse battery protection. Power semiconductor switches used to replace relay switches are encumbered by two disadvantages: they are prone to current sensing errors and they require additional external protection circuits for reverse battery protection. The proposed IC integrates a gate driver and current sensing blocks, thus compensating for these two disadvantages with a single IC. A p-sub-based 90-V $0.13-{\mu}m$ bipolar-CMOS-DMOS (BCD) process is used for the design and fabrication of the proposed IC. The current sensing accuracy (error ${\leq}{\pm}5%$ in the range of 0.1 A-6.5 A) and the reverse battery protection features of the proposed IC were experimentally tested and verified.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.9
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• pp.662-664
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• 1999

We fabricated AC-TFEL device having cone-shaped Si micro-tip reflector array based on the process which have been conventionally employed for the Si-tip field emitter array in FED system. As a result, the AC-TFEL device having a new geometrical structure could generate well concentrated visible white-light from 3600 reflectors/pixel under bipolar pulse excitation mode only by edge-emission mechanism.

• Proceedings of the KIEE Conference
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• 1994.07b
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• pp.1451-1453
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• 1994

A monolithic current limiting power MOSFET, which may be easily fabricated by the conventional DMOS process, is proposed. The proposed current limiting MOSFET consists of main power cells, sensing cells, and NPN lateral bipolar transistor so that users can adjust the current limiting levels with only one external resistor. The behaviors of the proposed device are numerically simulated and analyzed by 2-D device simulator MEDICI and mixed-mode simulator CA-AAM(Circuit Analysis Advanced Application Module).