• Title/Summary/Keyword: Bipolar anodizing

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A study on development of bipolar metal surface anodizing equipment using H-bridge (H-브리지를 이용한 양극성 금속표면 양극산화장치 개발에 관한 연구)

  • Yang, Keun-Ho
    • The Journal of the Korea institute of electronic communication sciences
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    • v.6 no.3
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    • pp.355-362
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    • 2011
  • In this paper, we developed the equipment to forming the insulation film which there are operated an electrolysis principles in particular solution. In the earlier, there are supplied the anode by unipolar voltage with pulse, in this paper, there are supplied the anode by bipolar voltage with pulse, alternately. And then, we examinate the system that there are developed the bipolar anodizing equipment using H-bridge. There are modulated pulse width for the variable current. In the results, we obtained the results of the uniform film surface that compared with the unipolar anodizing.

Development of Titanium Metal Surface Anodizing Equipment (티타늄 금속 표면 양극산화장치 개발)

  • Yang, Keun-Ho;Min, Byung-Woon
    • The Journal of the Korea institute of electronic communication sciences
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    • v.8 no.9
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    • pp.1307-1312
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    • 2013
  • In this paper, alkaline or acidic solution, in particular the principle of electrolysis to oxidize the metal surface to form a device isolation film is developed. In the past, mainly in the form of pulse voltage is applied to the anode only a unipolar method, but in this paper by using the H-bridge to the amount of the positive (+) voltage and the negative supply voltage, alternating voltage polarity devices were fabricated according to the characteristics of metal specimens with different electrical conditions to form an oxide film on the device was developed. Supply current variable was used for the PWM modulation, (+) and (-) polarity change of the H-bridge bipolar pulse voltage to supply the was that. As a result, a more uniform pores with unipolar film was formed.

Corrosion and Surface Resistance of Ni-C Composite by Electrodeposition (전해도금에 의한 Ni-C 복합층의 내식성 및 표면 전기저항)

  • Park, Je-Sik;Lee, Sung-Hyung;Jeong, Goo-Jin;Lee, Churl-Kyoung
    • Korean Journal of Materials Research
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    • v.21 no.5
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    • pp.288-294
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    • 2011
  • Simultaneous Ni and C codeposition by electrolysis was investigated with the aim of obtaining better corrosion resistivity and surface conductivity of a metallic bipolar plate for application in fuel cells and redox flow batteries. The carbon content in the Ni-C composite plate fell in a range of 9.2~26.2 at.% as the amount of carbon in the Ni Watt bath and the roughness of the composite were increased. The Ni-C composite with more than 21.6 at.% C content did not show uniformly dispersed carbon. It also displayed micro-sized defects such as cracks and crevices, which result in pitting or crevice corrosion. The corrosion resistance of the Ni-C composite in sulfuric acid is similar with that of pure Ni. Electrochemical test results such as passivation were not satisfactory; however, the Ni-C composite still displayed less than $10^{-4}$ $A/cm^2$ passivation current density. Passivation by an anodizing technique could yield better corrosion resistance in the Ni-C composite, approaching that of pure Ni plating. Surface resistivity of pure Ni after passivation was increased by about 8% compared to pure Ni. On the other hand, the surface resistivity of the Ni-C composite with 13 at.% C content was increased by only 1%. It can be confirmed that the metal plate electrodeposited Ni-C composite can be applied as a bipolar plate for fuel cells and redox flow batteries.

Fabrication of 8 inch Polyimide-type Electrostatic Chuck (폴리이미드형 8인치 정전기척의 제조)

  • 조남인;박순규;설용태
    • Journal of the Semiconductor & Display Technology
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    • v.1 no.1
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    • pp.9-13
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    • 2002
  • A polyimide-type electrostatic chuck (ESC) was fabricated for the application of holding 8-inch silicon wafers in the oxide etching equipment. For the fabrication of the unipolar ESC, core technologies such as coating of polyimide films and anodizing treatment of aluminum surface were developed. The polyimide films were prepared on top of thin coated copper substrates for the good electrical contacts, and the helium gas cooling technique was used for the temperature uniformity of the silicon wafers. The ESC was essentially working with an unipolar operation, which was easier to fabricate and operate compared to a bipolar operation. The chucking force of the ESC has been measured to be about 580 gf when the applied voltage was 1.5 kV, which was considered to be enough force to hold wafers during the dry etching processing. The employment of the ESC in etcher system could make 8% enhancement of the wafer processing yield.

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