• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.2
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• pp.116-119
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• 2000

A hybrid SOI bipolar-mode field effect transistor (BMFET) is proposed to improve the current gain. The device characteristics are analyzed and verified numerically for BMFET mode, DMOS mode, and hybrid mode by MEDICI simulation. The proposed SOI BMFET exhibits 30 times larger current gain in hybrid-mode operation by connecting DMOS gate to the p+ gate of BMFET structure as compared with the conventional structure without sacrifice of breakdown voltage and leakage current characteristics. This is due to the DMOS-gate-induced hybrid effect that lowers the barrier of p-body and reduces the charge in p-body.

• Proceedings of the KSR Conference
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• 2009.05a
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• pp.1943-1950
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• 2009

The development of high voltage Insulated Gate Bipolar Transistor (IGBT) have given new device advantage in the areas where they compete with conventional GTO (Gate Turnoff Thyristor) technology. The IGBT combines the advantages of a power MOSFET (Metal-Oxide Semiconductor Field-Effect Transistor) and a bipolar power transistor. The change of electrical characteristics for IGBT is mainly coming from the change of characteristics of MOSFET at the input gate and the PNP transistors at the output. The gate oxide structure gives the main influence on the changes in the electrical characteristics affected by environments such as radiation and temperature, etc.. The change of threshold voltage, which is one of the important design parameters, is brought by charge trapping at the gate oxide. In this paper, the electrical characteristics are simulated by SPICE simulation, and the parameters are found to design optimized circuits.

• Membrane Journal
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• v.13 no.3
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• pp.143-153
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• 2003

The effects of bipolar interface formed on the surface of cation-exchange membrane on water splitting phenomena were investigated. Results showed that the formation of immobilized bipolar interface resulted in significant water splitting during electrodialysis. In particular, the immobilized bipolar interface was easily created on the cation-exchange membrane surface in the electrodialytic systems where multivalent cations served as an electrolyte. Multivalent cations with low solubility product resulted in violent water splitting because they were easily precipitated on the membrane surface in hydroxide form. Therefore, the bipolar interface consisting of H- and OH-affinity groups were formed on the membrane-solution interface. Apparently, water splitting was largely activated with the help of strong electric fields generated between the metal hydroxide layer and fixed charge groups on the membrane surface. Likewise, the accumulation of large molecular counter ions on the membrane surface led to the formation of a fixed bipolar structure that could cause significant water splitting in the over-limiting current region. Therefore, the prevention of the immobilization of bipolar interface on the membrane surface is very essential in improving the process efficiency in a high-current operation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.292-295
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• 2002

In this work, transient characteristics of NPT(Non Punch Through)-IGBT(Insulated Gate Bipolar Transistor) have been studied with different temperatures analytically. Power losses are caused by heat generated in MIT-IGBT for steady state and transient state conditions. We therefore have focused on the analysis of excess carrier concentration and excess charge injected into N-drift layer with different temperatures and have obtained anode voltage drop during turn-off with lifetime of 2.4[${\mu}$s].

• Proceedings of the KSME Conference
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• 2001.06d
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• pp.605-611
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• 2001

A numerical technique for simulating the aggregation of charged particles was presented with a Brownian dynamic simulation in the free molecular regime. The Langevin equation was used for tracking each particle making up an aggregate. A periodic boundary condition was used for calculation of the aggregation process in each cell with 500 primary particles of 16 nm in diameter. We considered the thermal force and the electrostatic force for the calculation of the particle motion. The morphological shape of aggregates was described in terms of the fractal dimension. The fractal dimension for the uncharged aggregate was $D_{f}=1.761$. The fractal dimension changed slightly for the various amounts of bipolar charge. However, in case of unipolar charge, the fractal dimension decreased from 1.641 to 1.537 with the increase of the average number of charges on the particles from 0.2 to 0.3 in initial states.

• Journal of the Korean Society for Railway
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• v.13 no.5
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• pp.504-508
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• 2010

The development of high voltage Insulated Gate Bipolar Transistor (IGBT) have given new device advantage in the areas where they compete with conventional GTO (Gate Turnoff Thyristor) technology. The IGBT combines the advantages of a power MOSFET (Metal-Oxide Semiconductor Field-Effect Transistor) and a bipolar power transistor. The change of electrical characteristics for IGBT is mainly coming from the change of characteristics of MOSFET at the input gate and the PNP transistors at the output. The change of threshold voltage, which is one of the important design parameters, is brought by charge trapping at the gate oxide under the environment that radiation exists. The energy loss will be also studied as the inductance values are changed. In this paper, the electrical characteristics are simulated by SPICE, and compared for variation of inductance and threshold voltage based on IGBT.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.5
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• pp.268-273
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• 2016

In this study, we observed current-voltage characteristics of the MIM (metal-insulator-metal) structure. The $WO_x$ material was used between metal electrodes as the oxide insulator. The structure of the $Al/WO_x/TiN$ shows bipolar resistive switching and the operating direction of the resistive switching is clockwise, which means set at negative voltage and reset at positive voltage. The set process from HRS (high resistance state) to LRS (low resistance state) occurred at -2.6V. The reset process from LRS to HRS occurred at 2.78V. The on/off current ratio was about 10 and resistive switching was performed for 5 cycles in the endurance characteristics. With consecutive switching cycles, the stable $V_{set}$ and $V_{reset}$ were observed. The electrical transport mechanism of the device was based on the migration of oxygen ions and the current-voltage curve is following (Ohm's Law ${\rightarrow}$ Trap-Controlled Space Charge Limited Current ${\rightarrow}$ Ohm's Law) process in the positive voltage region.

• Proceedings of the KSME Conference
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• 2001.11b
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• pp.71-76
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• 2001

An electret filter is composed of permanently charged electet fibers and is widely used in applications requiring high collection efficiency and low-pressure drop. In this work, the collection efficiency of the filter media used in manufacturing cabin air filters was investigated by using poly-disperse particles when submicron particles are loaded. Long-term experiments were conducted by applying different charging states, which are spray electrification and charge equilibrium by bipolar ionization. In order to investigate on the effect of particle loading in filter media, NaCl particles were generated from 0.1% and 1% solutions by an atomizer. In NaCl 0.1%, the collection efficiency of electret filter decreased and then did not change in equilibrium state. In the case of relative larger particles of NaCl 1%, collection efficiency for the equilibrium charged particles increases due to the particle loading on the filter fibers. Particles charged by spray electrification are small in collection efficiency after equilibrium state and increase of filter media's pressure drop was very low in comparison of the equilibrium charged particles.

• ETRI Journal
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• v.15 no.3
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• pp.61-69
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• 1994

A new analytical model for the base current of Si/SiGe/Si heterojunction bipolar transistors(HBTs) has been developed. This model includes the hole injection current from the base to the emitter, and the recombination components in the space charge region(SCR) and the neutral base. Distinctly different from other models, this model includes the following effects on each base current component by using the boundary condition of the excess minority carrier concentration at SCR boundaries: the first is the effect of the parasitic potential barrier which is formed at the Si/SiGe collector-base heterojunction due to the dopant outdiffusion from the SiGe base to the adjacent Si collector, and the second is the Ge composition grading effect. The effectiveness of this model is confirmed by comparing the calculated result with the measured plot of the base current vs. the collector-base bias voltage for the ungraded HBT. The decreasing base current with the increasing the collector-base reverse bias voltage is successfully explained by this model without assuming the short-lifetime region close to the SiGe/Si collector-base junction, where a complete absence of dislocations is confirmed by transmission electron microscopy (TEM)[1].The recombination component in the neutral base region is shown to dominate other components even for HBTs with a thin base, due to the increased carrier storage in the vicinity of the parasitic potential barrier at collector-base heterojunction.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.7
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• pp.400-403
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• 2016

The resistive memory switching characteristics of resistive random access memory (ReRAM) using the amorphous GeSe thin film have been demonstrated at Al/Ti/GeSe/$n^+$ poly Si structure. This ReRAM indicated bipolar resistive memory switching characteristics. The generation and the recombination of chalcogen cations and anions were suitable to explain the bipolar switching operation. Space charge limited current (SCLC) model and Poole-Frenkel emission is applied to explain the formation of conductive filament in the amorphous GeSe thin film. The results showed characteristics of stable switching and excellent reliability. Through the annealing condition of $400^{\circ}C$, the possibility of low temperature process was established. Very low operation current level (set current: ~ ${\mu}A$, reset current: ~ nA) was showed the possibility of low power consumption. Particularly, $n^+$ poly Si based GeSe ReRAM could be applied directly to thin film transistor (TFT).