• 에너지공학
• /
• 제9권3호
• /
• pp.261-268
• /
• 2000

A heat transfer correlation to predict the vaporization of a water droplet in highly superheated steam during a loss-of-coolant accident(LOCA) of a nuclear power plant is provided. Vaporization of liquid fuel or water droplets in superheated air or steam and subsequent interface heat transfer between a liquid droplet and superheated gas is typically correlated by way of a Nusselt number as a function of Reynolds number, Prantl number, and in some cases including mass transfer number. Presently available correlations and experimental data of the evaporation of liquid droplets in air or steam are analyzed and a new Nusselt number correlation is proposed taking Schmidt number into consideration in order to account for binary diffusion of the vapor as well, Nu$\_$f/(1+B)$\^$0.7/=2+0.53Sc$\_$f/$\^$-1/5/Re$\_$M/$\^$$\sfrac{1}{2}$/Pr$\_$f/$\^$$\sfrac{1}{3}$/ for which properties are evaluated at film condition except the density of Reynolds number evaluated at ambient condition. Diverse correlations for various combinations of liquid and gas species are put into single equation. The blowing correction factor of (1+B)$\^$0.7/ is confirmed appropriate, and a criterion to distinguish so-called high- and low-temperature condition of ambient gas is set forth.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2010년도 제39회 하계학술대회 초록집
• /
• pp.124-124
• /
• 2010

Currently, extreme ultraviolet lithography (EUVL) is being investigated for next generation lithography. EUVL is one of competitive lithographic technologies for sub-22nm fabrication of nano-scale Si devices that can possibly replace the conventional photolithography used to make today's microcircuits. Among the core EUVL technologies, mask fabrication is of considerable importance due to the use of new reflective optics having a completely different configuration compared to those of conventional photolithography. Therefore, new materials and new mask fabrication process are required for high performance EUVL mask fabrication. This study investigated the etching properties of SnO2 (Tin Oxide) as a new absorber material for EUVL binary mask. The EUVL mask structure used for etching is SnO2 (absorber layer) / Ru (capping / etch stop layer) / Mo-Si multilayer (reflective layer) / Si (substrate). Since the Ru etch stop layer should not be etched, infinitely high selectivity of SnO2 layer to Ru ESL is required. To obtain infinitely high etch selectivity and very low LER (line edge roughness) values, etch parameters of gas flow ratio, top electrode power, dc self - bias voltage (Vdc), and etch time were varied in inductively coupled Cl2/Ar plasmas. For certain process window, infinitely high etch selectivity of SnO2 to Ru ESL could be obtained by optimizing the process parameters. Etch characteristics were measured by on scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS) analyses. Detailed mechanisms for ultra-high etch selectivity will be discussed.

• 한국산학기술학회논문지
• /
• 제13권2호
• /
• pp.906-918
• /
• 2012

본 연구에서는 천연가스 및 냉매를 구성하고 있는 성분들에 대한 증기압, 증발잠열, 액상의 밀도 및 이성분계 기액 상평형을 추산하는데 있어서 GERG-2004 모델식과 Peng-Robinson(PR) 상태방정식을 서로 비교하였다. 비교결과 GERG-2004모델식은 액상의 밀도 추산에 있어서 PR 상태방정식에 비해 정확성이 높았으나, 기액 상평형 추산에 대한 정확성은 오히려 낮았다. 한편, PR 상태방정식에서 Costald 상관 관계식을 사용하여 액상의 밀도를 추산한 경우에는 실험값과 오차율이 1% 이내로써 GERG-2004 모델식을 사용한 추산 결과와 거의 차이가 없었으며, 증기압과 증발 잠열의 추산은 GERG-2004모델식과 PR 상태방정식이 거의 유사한 결과를 나타냄을 알 수 있었다.

• Korean Chemical Engineering Research
• /
• 제44권5호
• /
• pp.460-467
• /
• 2006

Zeolite 5A 촉매에서 $H_2$, CO, $CO_2$에 대한 단성분 및 혼합성분의 흡착평형 실험을 정적부피법에 의해 수행하였다. 실험 데이타는 온도범위 293.15 K, 303.15 K, 313.15 K이고, 압력범위는 25 atm까지로 하여 얻었다. 각각의 파라미터들은 단성분 실험을 통해 얻었고, 이를 통해 혼합성분의 흡착 평형을 예측하였으며 실험값과 비교하였다. Zeolite 5A 에서의 $H_2/CO_2$, $CO/CO_2$ 혼합가스의 흡착평형 실험 결과는 Langmuir isotherm, Langmuir-Freundlich isotherm and Dual-Site Langmuir isotherm을 이용해 예측하였다. 그 결과 Dual-Site Langmuir isotherm모델이 가장 유사한 예측을 하는 것으로 나타났다.

• Korean Chemical Engineering Research
• /
• 제43권6호
• /
• pp.728-739
• /
• 2005

활성탄을 흡착제로 이용한 2bed-6step PSA 공정에서 이성분 혼합기체 $H_2/Ar$(80％/ 20％)와 삼성분 혼합기체 $H_2/Ar/CH_4$(60％/ 20％/ 20％)의 수소 분리를 연구하였다. 비등온-비단열 상태에서 LRC 등온식과 LDF 모델을 고려하여 공정실험과 공정모사를 하였으며, 주기정상상태에 도달할 때까지 탑 내의 농도와 온도변화를 각각 알아보았다. 두 공정 모두에서 수소에 대한 순도 99％와 회수율 75％의 결과를 얻을 수 있었다. 이때, PSA 공정에 미치는 영향으로는 공급유량, 흡착압력 그리고 P/F ratio를 변수로 실험과 전산모사를 수행하여 결과를 비교하였다. 이 결과로부터, 다성분에서 최적의 공정조건을 결정에서 중요한 결정요인과 삼성분에서 최적의 공정조건을 알아보았다.

• 천문학회지
• /
• 제39권2호
• /
• pp.41-50
• /
• 2006

We present the results of new multi-color CCD photometry for the contact binary XZ Leo, together with reasonable explanations for the period and light variations. Six new times of minimum light have been determined. A period study with all available timings confirms Qian's (2001) finding that the O-C residuals have varied secularly according to $dP/dt\;=\;+8.20{\times}10^{-8}\;d\;yr^{-l}$. This trend could be interpreted as a conservative mass transfer from the less massive cool secondary to the more massive hot primary in the system with a mass flow rate of about $5.37{\times}10^{-8}\;M_{\odot}\;yr^{-l}$. By simultaneous analysis of our light curves and the previously published radial-velocity data, a consistent set of light and velocity parameters for XZ Leo is obtained. The small differences between the observed and theoretical light curves are modelled by a blue third light and by a hot spot near the neck of the primary component. Our period study does not support the tertiary light but the hot region which may be formed by gas streams from the cool secondary. The solution indicates that XZ Leo is a deep contact binary with the values of q=0.343, $i=78^{\circ}.8$, ${\Delta}(T_1-T_2)=126\;K$, and f=33.6 %, differing much from those of Niarchos et al. (1994). Absolute parameters of XZ Leo are determined as follows: $M_1=1.84\;M_{\odot},\;M_2=0.63\;M_{\odot},\;R_1=1.75\;R_{\odot},\;R_2=1.10\;R_{\odot},\;L_1=7.19\;L_{\odot},\;and\;L_2=2.66\;L_{\odot}$.

• 열처리공학회지
• /
• 제18권5호
• /
• pp.281-287
• /
• 2005

Titanium aluminium nitride((TiAl)N) film is anticipated as an advanced coating film with wear resistance used for drills, bites etc. and with corrosion resistance at a high temperature. In this study, (TiAl)N thin films were deposited both at room temperature and at elevated substrate temperatures of 573 to 773 K by using a two-facing-targets type DC sputtering system in a mixture Ar and $N_2$ gases. Atomic compositions of the binary Ti-Al alloy target is Al-rich (25Ti-75Al (atm%)). Process parameters such as precursor volume %, substrate temperature and Ar/$N_2$ gas ratio were optimized. The crystallization processes and phase transformations of (TiAl)N thin films were investigated by X-ray diffraction, field-emission scanning electron microscopy. The microhardness of (TiAl)N thin films were measured by a dynamic hardness tester. The films obtained with Ar/$N_2$ gas ratio of 1:3 and at 673 K substrate temperature showed the highest microhardness of $H_v$ 810. The crystallized and phase transformations of (TiAl)N thin films were $Ti_2AlN+AlN{\rightarrow}TiN+AlN$ for Ar/$N_2$ gas ratio of 1:3, $Ti_2AlN+AlN{\rightarrow}TiN+AlN{\rightarrow}Ti_2AlN+TiN+AlN$ for Ar/$N_2$ gas ratio of 1:1 and $TiN+AlN{\rightarrow}Ti_2AlN+TiN+AlN{\rightarrow}Ti_2AlN+AlN{\rightarrow}Ti_2AlN+TiN+AlN$ for Ar/$N_2$ gas ratio of 3:1. The above results are discussed in terms of crystallized phases and microhardness.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
• /
• pp.251-252
• /
• 2012

Recently, the growing interest in organic microelectronic devices including OLEDs has led to an increasing amount of research into their many potential applications in the area of flexible electronic devices based on plastic substrates. However, these organic devices require a gas barrier coating to prevent the permeation of water and oxygen because organic materials are highly susceptible to water and oxygen. In particular, high efficiency OLEDs require an extremely low Water Vapor Transition Rate (WVTR) of $1{\times}10^{-6}g/m^2$/day. The Key factor in high quality inorganic gas barrier formation for achieving the very low WVTR required ($1{\times}10^{-6}g/m^2$/day) is the suppression of defect sites and gas diffusion pathways between grain boundaries. In this study, we developed an $Al_2O_3$ nano-crystal structure single gas barrier layer using a Neutral Beam Assisted Sputtering (NBAS) process. The NBAS system is based on the conventional RF magnetron sputtering and neutral beam source. The neutral beam source consists of an electron cyclotron Resonance (ECR) plasma source and metal reflector. The Ar+ ions in the ECR plasma are accelerated in the plasma sheath between the plasma and reflector, which are then neutralized by Auger neutralization. The neutral beam energies were possible to estimate indirectly through previous experiments and binary collision model. The accelerating potential is the sum of the plasma potential and reflector bias. In previous experiments, while adjusting the reflector bias, changes in the plasma density and the plasma potential were not observed. The neutral beam energy is controlled by the metal reflector bias. The NBAS process can continuously change crystalline structures from an amorphous phase to nano-crystal phase of various grain sizes within a single inorganic thin film. These NBAS process effects can lead to the formation of a nano-crystal structure barrier layer which effectively limits gas diffusion through the pathways between grain boundaries. Our results verify the nano-crystal structure of the NBAS processed $Al_2O_3$ single gas barrier layer through dielectric constant measurement, break down field measurement, and TEM analysis. Finally, the WVTR of $Al_2O_3$ nano-crystal structure single gas barrier layer was measured to be under $5{\times}10^{-6}g/m^2$/day therefore we can confirm that NBAS processed $Al_2O_3$ nano-crystal structure single gas barrier layer is suitable for OLED application.

• 전기학회논문지
• /
• 제59권8호
• /
• pp.1416-1422
• /
• 2010

$SF_6$ is the most commonly used insulating gas in electrical systems. But In these days $SF_6$ mixtures and alternative gas has been studied because of global warming. so although many studies have been carried out about binary gas mixtures with $SF_6$, few studies were presented about breakdown characteristics of $SF_6/N_2$ mixtures. At present study the breakdown characteristics of $SF_6/N_2$ mixtures in Non-uniform field was performed. In this paper, The simulation value are compared with experiment values. Streamer breakdown criterion was used for predicting breakdown voltage. For accurate simulation this simulation apply utilization factor using CST(computer simulation technology) EM $studio^{tm}$ program. AC breakdown experiments in non-uniform field was performed to compare with the breakdown simulation values. The pressure range of gas mixtures was 0.4 MPa to 0.7 MPa. The rod-plane was used and mixture ratio is $SF_6$ 20% : $N_2$ 80%. The gap lengths are 10mm to 70mm. As the pressure increase, this simulation value does not correspond to the experiment value. So this simulation need surface roughness factor. As a result of applying surface roughness factor this simulation decrease a relative error (|experiment value - simulation value| /simulation value).

• 전기학회논문지
• /
• 제57권2호
• /
• pp.245-251
• /
• 2008

Although many studies have been carried out about binary gas mixtures with $SF_6$, few studies were presented about breakdown characteristics of $SF_6/CF_4$ mixtures. At present study the breakdown characteristics of $SF_6/CF_4$ mixtures in non-uniform field was performed. The experiments were carried out under AC voltage and standard lightning impulse(SLI) voltage. Breakdown characteristics were investigated for $SF_6/CF_4$ mixtures when AC voltages and standard lighting impulse voltage was applied in a needle-plane. The needle-plane electrode whose gap distance was 3 mm were used in a test chamber. $SF_6/CF_4$ mixtures contained from 0 to 100% $SF_6$ and the experimental gas pressure ranged from 0.1 to 0.5 MPa. The breakdown characteristics of $SF_6/CF_4$ mixtures in non-uniform field may be influenced by defects like needle-shaped protrusions. In case of slowly rising SLI voltage and AC voltage it is enhanced by corona-stabilization. This phenomena caused by the ion drift during streamer development and the resulting space-charge is investigated. In non-uniform field under negative SLI voltage the breakdown voltage was increase linearly but under positive SLI voltage the breakdown voltage increase non-linearly. The breakdown voltage in needle-plane electrode displayed N shape characteristics for increasing the content of $SF_6$ at AC voltage. $SF_6/CF_4$ mixture has good dielectric strength and arc-extinguishing properties than pure SF6. This paper presents experimental results on breakdown characteristics for various mixtures of $SF_6/CF_4$ at practical pressures. We could make an environment friendly gas insulation material with maintaining dielectric strength by combing $SF_6\;and\;CF_4$ which generates a lower lever of the global warming effect.