• Journal of Oriental Medical Thermology
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• v.5 no.1
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• pp.69-77
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• 2006

Purpose : There are many patients with cold hypersensitivity who want oriental medicine treatment. But there has been no study of acupucture treatment effect on patients. So we examined effects of acupuncture treatment at different acupuncture points and compared results of 1st cold stress test and 2nd cold stress test. Method : 8 patients with hand cold hypersensitivity applied for this study. To rule out an bias, we excluded the patients with skin diseases, spinal nerve disease of cervial spine, external wounds. We measured body temperature with D.I.T.I. We performed cold stress test(CST) by 6 thermographic observation using D.I.T.I ; the 1st was taken after 15 minutes-resting, the 2nd was immediately taken after 1 minute soak in $20^{\circ}C$ water, the 3rd was taken at 10 minutes after the soak, and after a week, the 4th was taken after 15 minutes resting, the 5th was immediately taken after 1 minute soak in $20^{\circ}C$ water, the 6th was taken after 10 minutes with acupunture treatment. There were two groups of patients. First group was acupuncture that performed acupuncture therapy on distal points. Second group was acupuncture that performed acupuncture therapy on proximal points. We compared first CST and second CST recovery rate result. Results : The recovery rate at distal points acupuncture therapy was higher than before of that. but not significantly different. The recovery rate at proximal points acupuncture therapy was significantly higher than before of that. The recovery rate of both the back, the palms, all fingers of after proximal acupuncture therapy was significantly higher than before of that. Conclusions : Acupuncture could be effective therapy method on cold hypersensitivity, especially using proximal acupuncture points could be good at cold hypersensitivity patients. This was pilot study of very small samples, results had limitations. For further results more examine would be needed.

• ETRI Journal
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• v.31 no.6
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• pp.660-666
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• 2009

We investigate the effects of interfacial dielectric layers (IDLs) on the electrical properties of top-gate In-Ga-Zn-oxide (IGZO) thin film transistors (TFTs) fabricated at low temperatures below $200^{\circ}C$, using a target composition of In:Ga:Zn = 2:1:2 (atomic ratio). Using four types of TFT structures combined with such dielectric materials as $Si_3N_4$ and $Al_2O_3$, the electrical properties are analyzed. After post-annealing at $200^{\circ}C$ for 1 hour in an $O_2$ ambient, the sub-threshold swing is improved in all TFT types, which indicates a reduction of the interfacial trap sites. During negative-bias stress tests on TFTs with a $Si_3N_4$ IDL, the degradation sources are closely related to unstable bond states, such as Si-based broken bonds and hydrogen-based bonds. From constant-current stress tests of $I_d$ = 3 ${\mu}A$, an IGZO-TFT with heat-treated $Si_3N_4$ IDL shows a good stability performance, which is attributed to the compensation effect of the original charge-injection and electron-trapping behavior.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.8
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• pp.1-8
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• 2004

Experimental results are presented for gate oxide degradation, such as SILC and soft breakdown, and its effect on device parameters under negative and positive bias stress conditions using n-MOSFET's with 3 nm gate oxide. The degradation mechanisms are highly dependent on stress conditions. For negative gate voltage, both interface and oxide bulk traps are found to dominate the reliability of gate oxide. However, for positive gate voltage, the degradation becomes dominated mainly by interface trap. It was also found the trap generation in the gate oxide film is related to the breakage of Si-H bonds through the deuterium anneal and additional hydrogen anneal experiments. Statistical parameter variations as well as the “OFF” leakage current depend on both electron- and hole-trapping. Our results therefore show that Si or O bond breakage by tunneling electron and hole can be another origin of the investigated gate oxide degradation. This plausible physical explanation is based on both Anode-Hole Injection and Hydrogen-Released model.

• Electronic Materials Letters
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• v.14 no.6
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• pp.669-677
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• 2018

In this work, the high ${\kappa}$ $Zr_xAl_{1-x}O_y$ films with a different Zr concentration have been deposited by atomic layer deposition, and the effect of Zr concentrations on the structure, chemical composition, surface morphology and dielectric properties of $Zr_xAl_{1-x}O_y$ films is analyzed by Atomic force microscopy, X-ray diffraction, X-ray photoelectron spectroscopy and capacitance-frequency measurement. The effect of Zr concentrations of $Zr_xAl_{1-x}O_y$ gate insulator on the electrical property and stability under negative bias illumination stress (NBIS) or temperature stress (TS) of ZnSnO (ZTO) TFTs is firstly investigated. Under NBIS and TS, the much better stability of ZTO TFTs with $Zr_xAl_{1-x}O_y$ film as a gate insulator is due to the suppression of oxygen vacancy in ZTO channel layer and the decreased trap states originating from the Zr atom permeation at the $ZTO/Zr_xAl_{1-x}O_y$ interface. It provides a new strategy to fabricate the low consumption and high stability ZTO TFTs for application.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.8
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• pp.593-600
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• 2010

In this paper, High brightness LED (light-emitting diodes) driver IC (integrated circuit) using new current sensing circuit is proposed. This LED driver IC can provide a constant current with high current precision over a wide input voltage range. The proposed current-sensing circuit is composed of a cascode current sensor and a current comparator with only one reference voltage. This IC minimizes the voltage stress of the MOSFET (metal oxide semiconductor field effect transistor) from the maximum input voltage and has low power consumption and chip area by using simple-structured comparator and minimum bias current. To confirm the functioning and characteristics of our proposed LED driver IC, we designed a buck converter. The LED current ripple of the designed IC is in ${\pm}5%$ and a tolerance of the average LED current is lower than 2.43%. This shows much improved feature than the previous method. Also, protections for input voltage and operating temperature are designed to improve the reliability of the designed IC. Designed LED driver IC uses 1.0 ${\mu}m$ X-Fab. BiCMOS process parameters and electrical characteristics and functioning are verified by spectre (Cadence) simulation.

• Child Health Nursing Research
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• v.23 no.3
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• pp.300-311
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• 2017

Purpose: There are many forest and outdoor programs being offered but systematic reviews of effects are lacking. This study was done to identify content, format, and strategies of forest therapy programs for elementary school students. Methods: Literature search using keywords in English and Korean was performed using 6 electronic databases in December 2016. Search participants were elementary school students and interventions conducted in the forest. Seventeen forest therapy studies were selected for evaluation. Risk of Bias Assessment tool for non-randomized study was used for quality assessment. Results: All studies were quasi-experimental designs. Forest therapy programs included various activities in forests such as experience of five senses, meditation in the forest, walking in the forest, ecological play, observation of animals and insects. All studies used psychosocial health variables and forest healing programs had positive effects on sociality, depression, anxiety, self-esteem, stress, aggression, anger, and school adjustment. Limitations of these studies were vague reporting of the study, lack of ethical review and rigorous research designs. Conclusion: Forest therapy for elementary school child can be an effective way to improve psychosocial health. Future studies with rigorous study designs are needed to assess long-term effects of forest therapy on physical and psychosocial health.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1225_1226
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• 2009

유리 기판 상에 이중 게이트 절연막을 가지는 우수한 특성의 P형 엑시머 레이저 어닐링 (ELA) 다결정 실리콘 박막 트랜지스터를 제작하였다. 그리고 P형 짧은 채널 ELA 다결정 실리콘 박막 트랜지스터의 오프 상태 스트레스 하에서의 전기적 특성을 분석하였다. 스트레스하에서 긴 채널에서의 문턱 전압은 양의 방향으로 거의 이동하지 않는 (${\Delta}V_{TH}$ = 0.116V) 반면, 짧은 채널 박막 트랜지스터의 문턱 전압은 양의 방향으로 상당히 이동 (${\Delta}V_{TH}$ = 2.718V)하는 것을 확인할 수 있었다. 이런 짧은 채널 박막 트랜지스터에서 문턱 전압의 양의 이동은 다결정 실리콘 막과 게이트 산화막 사이의 계면에서의 전자 트랩핑 때문이다. 또한, 박막 트랜지스터의 누설 전류는 오프 상태 스트레스 하에서의 채널 영역의 홀 전하로 인하여 온 전류 수준을 감소시키지 않고 억제될 수 있었다. C-V 측정 결과는 계면의 전자 트랩핑이 드레인 접합 영역부근에서 발생한다는 것을 나타낸다.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1251-1254
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• 2006

A novel a-Si TFT integrated gate driver circuit using multi-thread driving has been developed. The circuit consists of two independent shift registers alternating between the two mode, "wake" and "sleep". The degradation of the circuit is retarded since the bias stress is removed during the sleep mode. It has been successfully integrated in 14.1-in. XGA LCD Panel, showing enhanced stability.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.944-947
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• 2005

Highly stable gate driver circuit using a-Si TFT has been developed. The circuit has dual-pull down structure, in which bias stress to the TFTs is relieved by alternating applied voltage. The circuit has been successfully integrated in 4-in. QVGA and 14-in. XGA TFT-LCD with a normal a-Si process, which are stable for over 2,000 hours at $60^{\circ}C$. The enhancement of stability of the circuit is attributed to retarded degradation of pull-down TFTs by AC driving.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.9-9
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• 2010

In this paper, High Brightness LED driver IC using new current sensing circuit is proposed. This LED driver IC can provide a constant current with high current precision over a wide input voltage range. The proposed current-sensing circuit is composed of a cascode current sensor and a current comparator with only one reference voltage. This IC minimizes the voltage stress of the MOSFET from the maximum input voltage and has low power consumption and chip area by using simple-structured comparator and minimum bias current. The LED current ripple of the designed IC is in ${\pm}5%$ and a tolerance of the average LED current is lower than 2.43%. This shows much improved feature than the previous method. Also, protections for input voltage and operating temperature are designed to improve the reliability of the designed IC. Designed LED driver IC uses $1{\mu}m$ X-Fab. BiCMOS process parameters and electrical characteristics and functioning are verified by spectre(Cadence) simulation.