• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.728-731
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• 2009

A negative waveform having inverted polarity of conventional waveform during reset and sustain periods was proposed to improve the driving characteristics. In order to control the negative wall-charge distribution, a positive bias on the scan electrode was applied during reset period. Compared to 0 V scan-bias condition, at 8 V scan-bias the formative time lag was improved about 23.95 % and the average time lag was improved about 14.91 %. All experiments were performed with the 42-inch PDP module in XGA resolution.

• Journal of information and communication convergence engineering
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• 제3권4호
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• pp.179-183
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• 2005

A photodiode capable of obtaining a sufficient photo/ dark current ratio at both forward bias state and reverse bias state is proposed. The photodiode includes a glass substrate, an aluminum film formed as a lower electrode over the glass substrate, an alumina film formed as an insulator barrier over the aluminum film, a hydrogenated amorphous silicon film formed as a photo conduction layer over a portion of the alumina film, and a transparent conduction film formed as an upper electrode over the hydro-generated amorphous silicon film. A good quality alumina $(Al_2O_3)$ film is formed by oxidation of aluminum film using electrolyte solution of succinic acid. Alumina is used as a potential barrier between amorphous silicon and aluminum. It controls dark-current restriction. In case of photodiodes made by changing the formation condition of alumina, we can obtain a stable dark current $(\~10^{-12}A)$ in alumina thickness below $1000{\AA}$. At the reverse bias state of the negative voltage in ITO (Indium Tin Oxide), the photo current has substantially constant value of $5{\times}10^{-9}$ A at light scan of 100 1x. On the other hand, the photo/dark current ratios become higher at smaller thicknesses of the alumina film. Therefore, the alumina film is used as a thin insulator barrier, which is distinct from the conventional concept of forming the insulator barrier layer near the transparent conduction film. Also, the structure with the insulator thin barrier layer formed near the lower electrode, opposed to the ITO film, solves the interface problem of the ITO film because it provides an improved photo current/dark current ratio.

• 전자공학회논문지
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• 제49권9호
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• pp.322-327
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• 2012

마주보는 2개의 병렬전극을 이용한 스캔 방식의 디지털 X-ray 영상 센서는 많은 발전을 해왔으며 상업용으로 널리 이용되고 있다. 본 연구에서는 PDP(plasma display panel) 제조 공정에서 사용되고 있는 글라스 재질에 silver paste 전극을 이용하여 드리프트 전극과 픽셀 전극이 있는 챔버를 형성하고 챔버내에 X-ray와 반응하는 Xe 가스를 주입하여 스캔 방식의 1D X-ray 영상 센서를 제작하였다. 드리프트 전극의 바이어스 전압 크기에 따른 싱글 픽셀의 X-ray 신호 크기를 평가하였으며 납(Pb)을 이용하여 싱글 픽셀을 차폐하였을 경우와 차폐하지 않았을 때의 싱글 픽셀 신호 특성을 조사하였다. X-ray 흡수율(4%)은 소다 라임(soda lime, 1.1mm) 글라스에서 가장 낮았으며 센서에서 검출되는 전기적 신호는 드리프트 전극에 인가하는 전압이 클수록 증가하였다. 그리고 자체 제작한 DAS(data acquisition system) 및 센서 스캐닝 시스템을 이용하여 디지털 영상을 구현하였다.