• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.1047-1050
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• 2009

The two approaches to improve the stability of oxide TFTs are described. First approach is the optimization of device architecture including MIS structure and passivation layer using conventional InGaZnO semiconductor channel layer. Second approach is to develop the new kinds of oxide semiconductor materials, which is very robust and stable against the gate bias stress and thermal stress.

• 한국표면공학회지
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• 제33권5호
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• pp.319-328
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• 2000

Silver is known to have such characteristics as low shear strength, good transfer-film forming tendency, and good corrosion resistance. Silver thin films have been prepared by ion plating of physical vapour deposition (PVD) using both argon gas pressure and bias voltage of processing condition. After the silver films were prepared, the properties in them were examined by gas pressure and bias voltage of substrate. Their morphology and crystal orientation were investigated by scanning electron microscopy (SEM) and X-ray diffractor. The properties of film were, also, studied to relate with morphology, X-ray diffraction pattern, and friction coefficient at vacuum ambient. The friction coefficient was stabilized remarkably on deposited films with increasing argon pressure for deposition. Also, the effect of increasing of the bias voltage for deposition resulted in lower friction coefficient and stability in $1.7$\times$10^{-4}$ torr. On the contrary, behavior of friction coefficient was stabilized on deposited films with decreasing the bias voltage in $1.7$\times$10^{-5}$ torr for deposition.

• 한국전기전자재료학회논문지
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• 제33권1호
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• pp.6-9
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• 2020

Thin film transistors (TFTs) with large-area, high mobility, and high reliability are important factors for next-generation displays. In particular, thin transistors based on IGZO oxide semiconductors are being actively researched for this application. In this study, several methods for improving the reliability of a-IGZO TFTs by applying various materials on a passivation layer are investigated. In the literature, inorganic SiO₂, TiO₂, Al₂O₃, ZTSO, and organic CYTOP have been used for passivation. In the case of Al₂O₃, excellent stability is exhibited compared to the non-passivation TFT under the conditions of negative bias illumination stress (NBIS) for 3 wavelengths (R, G, B). When CYTOP passivation, SiO₂ passivation, and non-passivation devices were compared under the same positive bias temperature stress (PBTS), the Vth shifts were 2.8 V, 3.3 V, and 4.5 V, respectively. The Vth shifts of TiO₂ passivation and non-passivation devices under the same NBTS were -2.2 V and -3.8 V, respectively. It is expected that the presented results will form the basis for further research to improve the reliability of a-IGZO TFT.

• 한국정보통신학회논문지
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• 제14권8호
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• pp.1776-1782
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• 2010

간섭형 Fiber optic gyroscope(FOG)는 Sagnac 효과를 이용한 회전센서로 알려져 있으며, 성능 개선을 위한 연구가 수행되어 왔다. 본 논문은 개루프 방식의 FOG 개발과 FPGA를 이용한 디지털 신호처리 기술을 다루고 있다. 첫 번째 목표는 양호한 bias stability(0.22deg/h), Scale factor stability, 단일모드 광섬유를 이용한 낮은 Angle randomwalk(0.07deg/$\sqrt[]{h}$)와 저가의 중급 자이로(Pointing grade)의 설계를 목표로 하고 있다. 두 번째 목표는 광검출기의 출력신호를 고속 ADC로 직접 변환 후 디지털 신호처리를 하는 FOG용 FPGA 개발이다. 본 연구에서 사용한 Cascaded integrator-comb(CIC)타입의 데시메이션 필터는 Adder와 Shift register만으로 구성되어 적은 계산량을 요구하므로 모든 디지털 FOG 프로세서를 저가의 프로세서로도 사용이 가능하다.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2009년도 추계학술대회
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• pp.153-156
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• 2009

Sagnac 효과를 사용한 회전센서로 알려진 광자이로스코프(이하 FOG)는 넓은 범위의 회전율을 측정하기 위해 개발 중에 있다. 본 논문은 개루프 FOG의 개발과 FPGA를 이용한 디지털 신호처리 기술을 다루고 있다. 첫째로 Good bias stability($0.22^{\circ}/hr$), Scale factor stability, 단일모드 광섬유를 이용한 최대한 낮은 angle random walk ($0.07^{\circ}/\sqrt{hr}$) 와 저가의 중급 자이로 (pointing grade)의 설계를 목표로 하고 있다. 둘째 Processing 이득에 의해 실질적으로 디지털 Demodulator 출력이 개선된 SNR을 갖는 디지털 FOG 신호처리 알고리즘을 디자인 했다. 적은 계산량을 가진 저가의 프로세서와 Adder, 그리고 Shift register만으로 필요로 하는 CIC타입의 Decimation 블록은 이러한 모든 디지털 FOG 프로세서에 사용 가능하다.

• Advances in materials Research
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• 제13권1호
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• pp.63-86
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• 2024

Asphalt concrete (AC), is a mixture of bitumen and aggregates, which is very sensitive in the design of flexible pavement. In this study, the Marshall stability of the glass and carbon fiber bituminous concrete was predicted by using Artificial Neural Network (ANN), Support Vector Machine (SVM), Random Forest (RF), and M5P Tree machine learning algorithms. To predict the Marshall stability, nine inputs parameters i.e., Bitumen, Glass and Carbon fibers mixed in 100:0, 75:25, 50:50, 25:75, 0:100 percentage (designated as 100GF:0CF, 75GF:25CF, 50GF:50 CF, 25GF:75CF, 0GF:100CF), Bitumen grade (VG), Fiber length (FL), and Fiber diameter (FD) were utilized from the experimental and literary data. Seven statistical indices i.e., coefficient of correlation (CC), mean absolute error (MAE), root mean squared error (RMSE), relative absolute error (RAE), root relative squared error (RRSE), Scattering index (SI), and BIAS were applied to assess the effectiveness of the developed models. According to the performance evaluation results, Artificial neural network (ANN) was outperforming among other models with CC values as 0.9147 and 0.8648, MAE values as 1.3757 and 1.978, RMSE values as 1.843 and 2.6951, RAE values as 39.88 and 49.31, RRSE values as 40.62 and 50.50, SI values as 0.1379 and 0.2027 and BIAS value as -0.1 290 and -0.2357 in training and testing stage respectively. The Taylor diagram (testing stage) also confirmed that the ANN-based model outperforms the other models. Results of sensitivity analysis showed that the fiber length is the most influential in all nine input parameters whereas the fiber combination of 25GF:75CF was the most effective among all the fiber mixes in Marshall stability.

• JSTS:Journal of Semiconductor Technology and Science
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• 제10권2호
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• pp.118-129
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• 2010

A lower-threshold-voltage (LVth) SRAM cell with an elevated cell biasing scheme, which enables to reduce the random threshold-voltage (Vth) variation and to alleviate the stability-degradation caused by word-line (WL) and cell power line (VDDM) disturbed accesses in row and column directions, has been proposed. The random Vth variation (${\sigma}Vth$) is suppressed by the proposed LVth cell. As a result, the LVth cell reduces the variation of static noise margin (SNM) for the data retention, which enables to maintain a higher SNM over a larger memory size, compared with a conventionally being used higher Vth (HVth) cell. An elevated cell biasing scheme cancels the substantial trade-off relationship between SNM and the write margin (WRTM) in an SRAM cell. Obtained simulation results with a 45-nm CMOS technology model demonstrate that the proposed techniques allow sufficient stability margins to be maintained up to $6{\sigma}$ level with a 0.5-V data retention voltage and a 0.7-V logic bias voltage.

• Journal of Magnetics
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• 제9권1호
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• pp.13-16
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• 2004

Magnetic tunnel junctions (MTJs) comprising amorphous CoNbZr layers have been investigated. $Co_{85.5}Nb_8Zr_{6.5}$(in at. %) layers were employed to substitute the traditionally used Ta layers with an emphasis given on under-standing underlayer effect. The typical junction structure was $SiO_2/CoNbZr$ or Ta 2/CoFe 8/IrMn 7.5/CoFe 3/Al 1.6 + oxidation/CoFe 3/CoNbZr or Ta 2 (nm). For both as-deposited state and after annealing, the CoNbZr-underlayered structure showed superior surface smoothness up to the tunnel barrier than Ta-underlayerd one (rms roughness of 0.16 vs. 0.34 nm). CoNbZr-based MTJs was proven beneficial for increasing thermal stability and increasing $V_h$ (the bias voltage where MR ratio becomes half) characteristics than Ta-based MTJs. This is because the CoNbZr-based junctions offer smoother interface structure than the Ta-based one.

• JSTS:Journal of Semiconductor Technology and Science
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• 제5권1호
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• pp.58-66
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• 2005

Inertial-grade vertical-type and lateral-type differential resonant accelerometers (DRXLs) are designed, fabricated using one process and tested for navigational applications. The accelerometers consist of an out-of-plane (for z-axis) accelerometer and in-plane (for x, y-axes) accelerometers. The sensing principle of the accelerometer is based on gap-sensitive electrostatic stiffness changing effect. It says that the natural frequency of the accelerometer can be changed according to an electrostatic force on the proof mass of the accelerometer. The out-of-plane resonant accelerometer shows bias stability of $2.5{\mu}g$, sensitivity of 70 Hz/g and bandwidth of 100 Hz at resonant frequency of 12 kHz. The in-plane resonant accelerometer shows bias stability of $5.2{\mu}g$, sensitivity of 128 Hz/g and bandwidth of 110 Hz at resonant frequency of 23.4 kHz. The measured performances of two accelerometers are suitable for an application of inertial navigation.

• 대한전자공학회논문지
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• 제5권2호
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• pp.8-14
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• 1968

트란지스타 단일안정 멀티바이부래타(monostable multi-vibrator)와 시리콘턴넬 다이오드 (T.D)로써 구성된 전류파 파고변별기를 설계하여 그 특성을 조사하였다. 피측정 전류액의 범위는 50㎂-5.23mA이며, 이 범위에 있어서 측정된 최대비직선도는 ±0.75% 이었다. 이 변별기의 전류액 분해능은 T.D를 통하여 흐르는 편의전류에 따라서 약간 달라지며 역방향 편의전류가 3 mA 일때, 만일 5%의 과잉파고를 주용한다면 그 분해시간은 2μS이다. 다음에 이 변별기의 임계치 안정도는 주로 T.D의 턴넬전류의 최대치 1 의 안정도에 의하여 좌우되며 환경온도의 변화범위가 0℃∼50℃일때는 최대비직선도 즉 ±0.75T 보다 더큰 임계치변화는 관측되지 않았다.