• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.19 no.9
• /
• pp.862-867
• /
• 2006

Bi-based nano-varistors and micro-varistors fabricated with each ZnO nano-powder and micro-powder were studied about characteristics on the surge capability in this study. ZnO nano-varistors were sintered in air at $1050^{\circ}C$ for 2 hr. The voltage-current and residual voltage properties of ZnO nano-varistor were compared with their of ZnO micrio-varistor. As a result of these properties, our ZnO nano-varistor has about 3 times at operating voltage as compared with conventional ZnO varistor fabricated with micro-powder and the residual voltage was 8.06 kV at nominal discharge current 101kA in the lighting impulse current test. And then the residual voltage rate 1.72 of our nano-varistor has had better performance than the 1.79 of micro-varistor because ZnO nano-varistor has shown much quick response property because of increasing effective cross-section area. Also, to analysis surge capability took thermal images for pyrexia temperature distribution with each of the varistors after operating varistors. Nano-varistor doesn't have shown local overheating and can confirm accurate temperature grade on the surface of its.

• Journal of Powder Materials
• /
• v.30 no.6
• /
• pp.509-515
• /
• 2023

Lead-free perovskite ceramics, which have excellent energy storage capabilities, are attracting attention owing to their high power density and rapid charge-discharge speed. Given that the energy-storage properties of perovskite ceramic capacitors are significantly improved by doping with various elements, modifying their chemical compositions is a fundamental strategy. This study investigated the effect of Zn doping on the microstructure and energy storage performance of potassium sodium niobate (KNN)-based ceramics. Two types of powders and their corresponding ceramics with compositions of (1-x)(K,Na)NbO₃-xBi(Ni_2/3Ta_1/3)O₃ (KNN-BNT) and (1-x)(K,Na)NbO₃-xBi(Ni_1/3Zn_1/3Ta_1/3)O₃ (KNN-BNZT) were prepared via solid-state reactions. The results indicate that Zn doping retards grain growth, resulting in smaller grain sizes in Zn-doped KNN-BNZT than in KNN-BNT ceramics. Moreover, the Zn-doped KNN-BNZT ceramics exhibited superior energy storage density and efficiency across all x values. Notably, 0.9KNN-0.1BNZT ceramics demonstrate an energy storage density and efficiency of 0.24 J/cm³ and 96%, respectively. These ceramics also exhibited excellent temperature and frequency stability. This study provides valuable insights into the design of KNN-based ceramic capacitors with enhanced energy storage capabilities through doping strategies.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.15 no.2
• /
• pp.190-197
• /
• 2002

In this thesis, ZnO varistors with various formulation, such as A∼E, were fabricated according to ceramic fabrication method. The microstructure, electrical properties, and surge characteristics of ZnO varistors were investigated according to ZnO varistors with various formulation. In the microstructure, A∼E\`s ZnO varistor ceramics sintered at 1130$\^{C}$ was consisted of ZnO grain(ZnO), spinel phase (Zn$\_$2.33/Sb$\_$0.67/O$\_$4/), Bi-rich phase(Bi$_2$O$_3$) and intergranuler phase, wholly. Lightning impulse residual voltage of A, B, C and E\`s ZnO varistors suited standard characteristics, below 12kV at current of 5kA. On the contrary, D\`s ZnO varistor exhibited high residual voltage as high reference voltage. In the accelerated aging test, leakage current and watt loss of B, C and D\`s ZnO varistors increases abruptly with stress time under the first a.c. stress(115$\^{C}$/3.213kV/300h). Consequently, C varistor exhibited a thermal run away. On the contrary, leakage current and watt loss of A and C\`s ZnO varistors which show low initial leakage current exhibited constant characteristics. After high current impulse test, A\`s ZnO varistor has broken the side of varistor but impulse current flowed. On the contrary, E\`s ZnO Varistor exhibited good discharge characteristics which the appearance of varistor was not wrong such as puncture, flashover, creaking and other significant damage. After long duration impulse current test, E\`s ZnO varistor exhibited good discharge characteristics which the appearance of varistor was not wrong such as puncture, flashover, creaking and other significant damage. After high current impulse test and long duration impulse current test, E\`s ZnO varistor exhibited very good characteristics which variation rate of residual voltage is 1.4% before and after test.

• Journal of the Korean Ceramic Society
• /
• v.34 no.10
• /
• pp.1074-1082
• /
• 1997

Microstructure and permeability as a function of sintering temperature and composition were studied on the Ni$\delta$Cu0.4-$\delta$Zn0.6Fe2O4 ($\delta$=0, 0.1, 0.2, 0.3, 0.4) which was prepared by Cu2+ substitution for Ni2+ in Ni.0.4Zn0.6Fe2O4, then followed by 8 wt% CuO and 1wt% Bi2O3 as sintering aids. It was found that NiCuZn ferrite in which Cu2+ is substituted for Ni2+ is more effective in reduction of sintering temperature than Ni.0.4Zn0.6Fe2O4, containing CuO as a sintering aid. The specimen $\delta$=0.2 sintered at 90$0^{\circ}C$ for 2hr exhibited the highest initial permeability value ($\mu$o=280 at 1Mhz), but the real permeability decreased at the frequency under 10 MHz. EPMA analysis showed that Ni$\delta$Cu0.4-$\delta$Zn0.6Fe2O4 ($\delta$=0.4), sintered at 95$0^{\circ}C$ for 2hrs consisted of three phase regions of Ni.0.3Cu0.1Zn0.6Fe2O4 region, Cu and Bi liquid existed at the 3-point boundary, although the stabilization energy of Ni2+ is higher than that of Cu2+ in B site.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.08a
• /
• pp.204-204
• /
• 2010

본 연구에서는 Glass 기판 위에 우수한 광 투과도를 갖는 ZnO 기반의 Thin Film Transistor (TFT)를 제작하였으며, 이에 대한 전기적 및 광학적 특성을 분석하였다. 소자 구조의 제작은 Maskless Aligner를 이용한 Optical lithograph법을 이용하였다. 채널층은 ZnO로 하였고 Source/Drain 영역은 GaZnO로 하여 전체구조가 ZnO 기반의 homogeneity를 유지하게 하였다. 이때 Gate 절연막은 Bi1.5Zn1Nb1.5O7와 SiO2 두가지 종류로 하여 각각의 특성을 비교하였다. 본연구에서 TFT구조의 각 층은 모두 r. f. 마그네트론 스퍼터법으로 증착하였다. 제작된 TFT들은 채널층 및 절연막 형성 등에 관여된 세부적 실험변수의 변화에 관계없이 약 75% 이상의 우수한 광투과도 특성을 보였다. 전기적 특성 평가에서, 제작된 TFT들은 전반적으로 비교적 낮은 문턱전압과 높은 이동도를 보였다. 하지만, 트랜지스터의 전기적 전송 특성의 주요 인자들인 채널-이동도, 스위칭, 누설 및 이력 등은 ZnO 채널층 혹은 Bi1.5Zn1Nb1.5O7 절연막 형성 시 주입되는 O2 가스의 분압에 의존하는 것이 관측되었다. 이를 통하여 트랜지스터의 각 세부 영역의 구조 및 형성 조건이 트랜지스터의 전기적 특성에 미치는 영향과 상관관계에 대하여 논의한다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.27 no.7
• /
• pp.472-476
• /
• 2014

We report the characteristics of thin-film transistor (TFT) to make the bi-channel structure with stacked $Mg_{0.1}Zn_{0.9}O$ (Mg= 10 at.%) and ZnO. The ZnO and $Mg_{0.1}ZnO_{0.9}O$ thin films were deposited by radio frequency (RF) co-sputter system onto the thermally oxidized silicon substrate. A total thickness of active layer was 50 nm. Firstly, the ZnO thin films were deposited to control the thickness from 5 nm to 30 nm. Sequentially, the $Mg_{0.1}ZnO_{0.9}O$ thin films were deposited to change from 45 nm to 20 nm. The bi-layer TFT shows more improved properties than the single layer TFT. The field effect mobility and subthreshold slope for $Mg_{0.1}ZnO_{0.9}O$/ZnO-TFT are $7.40cm^2V^{-1}s^{-1}$ and 0.24 V/decade at the ZnO thickness of 10 nm, respectively.

• Proceedings of the Korean Ceranic Society Conference
• /
• 2003.10a
• /
• pp.149.2-149
• /
• 2003

• Proceedings of the KIEE Conference
• /
• 1998.07d
• /
• pp.1471-1474
• /
• 1998

ZnO Varistor with composition of ZnO, $Bi_2O_3$, $Sb_2O_3$, CoO, NiO, $MnO_2$, $Cr_2O_3$, $Al_2O_3$ was fabricated by sintering methods. The purpose of this paper is to present certified voltage-current test data and a summary of electrical characteristics of the ZnO varistors.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.20 no.1
• /
• pp.19-24
• /
• 2007

The effects of $B_2O_3-SiO_2-R(R;CaO,\;BaO,\;ZnO,\;Bi_2O_3)$ borosilicate glass system on the sintering behavior and microwave dielectric properties of ceramic/glass composites were investigated as functions of modifier, glass addition ($30{\sim}50\;vol%$) and sintering temperature ($500{\sim}900^{\circ}C$ for 2 hrs). The addition of 50 and 45 vol% glass ensured successful sintering below $900^{\circ}C$. Sintering characteristics of the composites were well described in terms of modifier. Borosilicate glass enhanced the reaction with $Al_{2}O_{3}$ to form pores, second phases and liquid phases, which was responsible to component of modifier. Dielectric constant (${\varepsilon}_{r},\;Q{\times}f_{o}$) and temperature coefficient of resonant frequency (${\tau}_{f}$) of the composite with 50 and 45 vol% glass contents($B_{2}O_{3}:SiO_{2}:R=25:10:65$) demonstrated A-CaBS(7.8, 2,560 GHz, -81ppm/$^{\circ}C$), A-BaBs(5.8, 3.130 GHz, -64 ppm/$^{\circ}C$), A-ZnBS(5.7, 17,800 GHz, -21 ppm/$^{\circ}C$), A-BiBs(45 vol% glass in total)(8.3, 2,700 GHz, -45 ppm/$^{\circ}C$) which is applicable to substrate requiring an low dielectric properties.

• Journal of the Korean Magnetics Society
• /
• v.9 no.5
• /
• pp.234-238
• /
• 1999

Lithium ferrites are prominent in the element of microwave frequency communication core and high frequency memory core because of their low coercivity and the high squareness ratio. This paper reports primarily the development of lithium ferrites with the low coercivity and high squareness ratio. The materials with $Li_{0.48-0.5x}Bi_{0.02}Ni_{0.04}Zn_xFe_{2.46-0.5x}O_4$ (x = 0,0.01, 0.02, 0.03) have been prepared to investigate the physical properties. The addition of ZnO gave raised maximum induction $(B_m)$ and decreased coercive force $(H_c)$, but the squareness ratio $(R\;=\;B_m/B_r)$ was decreased. The specimen of squareness ratio R=0.82, coercive force $H_c=\;1.80\;Oe$ was obtained for $Li_{0.48-0.5x}Bi_{0.02}Ni_{0.04}Zn_xFe_{2.46-0.5x}O_4$ (X=0) sintered at 105$0^{\circ}C$. Also the sample of squareness ratio R = 0.75, coercive force $H_c=\;1.70\;Oe$ for $Li_{0.48-0.5x}Bi_{0.02}Ni_{0.04}Zn_xFe_{2.46-0.5x}O_4$ (X = 0) sintered at 110$0^{\circ}C$ was measured. The Tc was obtained 463$^{\circ}C$ and the Br of environmental temperature variation was stable.